专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07256765B2 Electrophoretic device, method for driving the same, and electronic apparatus 有权
标题翻译：电泳装置及其驱动方法及电子设备
公开(公告)号：US07256765B2
公开(公告)日：2007-08-14
申请号：US10109611
申请日：2002-03-28
申请人： Hideyuki Kawai , Tatsuya Shimoda
发明人： Hideyuki Kawai , Tatsuya Shimoda
IPC分类号： G09G3/34
CPC分类号： G02F1/167
摘要： An electrophoretic device according to the present invention comprises electrophoretic dispersion including a liquid-phase dispersion medium and electrophoretic particles dispersed therein, in which the positions of the electrophoretic particles are controlled in accordance with an electric field applied thereto. In addition, the electrophoretic device further has a first means for applying a first voltage so that a first dispersion state of the electrophoretic particles is changed into a second dispersion state and a second means for applying a second voltage so that the second dispersion state is substantially sustained. The electrophoretic device described above has superior image-sustaining properties.
摘要翻译：根据本发明的电泳装置包括电泳分散体，包括液相分散介质和分散在其中的电泳颗粒，其中电泳颗粒的位置根据施加到其上的电场来控制。此外，电泳装置还具有第一装置，用于施加第一电压，使得电泳粒子的第一色散状态改变为第二色散状态;以及第二装置，用于施加第二电压，使得第二色散状态基本上持续。上述电泳装置具有优异的图像维持性能。

82. 发明申请

US20060079010A1 Transfer base substrate and method of semiconductor device 有权
公开(公告)号：US20060079010A1
公开(公告)日：2006-04-13
申请号：US11220600
申请日：2005-09-08
申请人： Hiroyuki Hara , Tatsuya Shimoda
发明人： Hiroyuki Hara , Tatsuya Shimoda
IPC分类号： H01L21/66
CPC分类号： H01L27/1266 , G01R31/31715 , G01R31/31723 , G11C11/401 , G11C2029/0403 , G11C2029/5002 , H01L22/34 , H01L27/1214 , H01L2924/0002 , H01L2924/00
摘要： A transfer base substrate comprises: a substrate; a plurality of transfer thin film circuits formed on the substrate via removing layer; a test circuit formed on the substrate for checking circuit operation; and a wiring coupling each of transfer thin film circuits with a test circuit.

83. 发明申请

US20050146588A1 Pattern formation method and substrate manufacturing apparatus 有权
公开(公告)号：US20050146588A1
公开(公告)日：2005-07-07
申请号：US11068303
申请日：2005-02-28
申请人： Hiroshi Kiguchi , Hitoshi Fukushima , Satoshi Nebashi , Tatsuya Shimoda
发明人： Hiroshi Kiguchi , Hitoshi Fukushima , Satoshi Nebashi , Tatsuya Shimoda
IPC分类号： B41J2/01 , H01L21/00 , H01L21/3205 , H01L21/768 , H01L51/00 , H01L51/40 , H05K3/12
CPC分类号： H01L21/6715 , H01L21/288 , H01L21/768 , H01L21/76838 , H01L27/1292 , H01L51/0005 , H05K3/125
摘要： A pattern formation method for discharging a prescribed fluid onto a substrate form an ink-jet head and forming an arbitrary pattern. The method including the steps of discharging the fluid onto the substrate from an ink jet head and defining a pattern-forming region by subjecting the substrate to a specific treatment to prevent the fluid from spreading. The pattern forming region is formed after the fluid has been ejected so that the arbitrary pattern is formed in the fluid corresponding to the pattern-forming region. The treatment is one in which banks for preventing the fluid from flowing out are formed around the pattern-forming region. The method also includes removing the banks following the formation of the pattern.

84. 发明申请

US20050032268A1 Organic thin film transistor and method of manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20050032268A1
公开(公告)日：2005-02-10
申请号：US10882091
申请日：2004-06-30
申请人： Takao Nishikawa , Tatsuya Shimoda , Yoshihiro Iwasa , Taishi Takenobu , Shinichiro Kobayashi , Tadaoki Mitani
发明人： Takao Nishikawa , Tatsuya Shimoda , Yoshihiro Iwasa , Taishi Takenobu , Shinichiro Kobayashi , Tadaoki Mitani
IPC分类号： H01L51/05 , G02F1/13 , H01L21/28 , H01L29/786 , H01L51/30 , H01L35/24 , H01L21/84
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0046 , H01L51/0052 , H01L51/0516
摘要： An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic thin film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. A threshold voltage controlling film is provided between the gate insulating film and the organic semiconductor film.
摘要翻译：提供有机薄膜晶体管及其制造方法。晶体管具有可以容易地控制的阈值电压，而不改变形成有机半导体膜的材料。有机薄膜晶体管包括栅电极，栅极绝缘膜，源电极，漏电极和有机半导体膜。在栅极绝缘膜和有机半导体膜之间设置阈值电压控制膜。

85. 发明申请

US20050013161A1 Ferroelectric memory and method of manufacturing the same 审中-公开
标题翻译：铁电记忆及其制造方法
公开(公告)号：US20050013161A1
公开(公告)日：2005-01-20
申请号：US10771353
申请日：2004-02-05
申请人： Akihito Matsumoto , Eiji Natori , Tatsuya Shimoda
发明人： Akihito Matsumoto , Eiji Natori , Tatsuya Shimoda
IPC分类号： H01L27/00 , G11C11/14 , G11C11/22 , H01L21/8239 , H01L21/8246 , H01L27/02 , H01L27/10 , H01L27/105 , H01L29/786
CPC分类号： G11C11/22
摘要： A ferroelectric memory of the present invention includes a sheet-shaped device including a memory cell array which includes a ferroelectric capacitor, and a circuit section which is formed on the memory cell array and includes a thin-film transistor.
摘要翻译：本发明的铁电体存储器包括：包括具有铁电电容器的存储单元阵列的片状器件和形成在存储单元阵列上并包括薄膜晶体管的电路部分。

86. 发明授权

US06642542B1 Large EL panel and manufacturing method therefor 有权
标题翻译：大型EL面板及其制造方法
公开(公告)号：US06642542B1
公开(公告)日：2003-11-04
申请号：US09856852
申请日：2001-05-29
申请人： Tatsuya Shimoda , Takao Nishikawa
发明人： Tatsuya Shimoda , Takao Nishikawa
IPC分类号： H01L2904
CPC分类号： H01L27/3293 , G09F9/313 , H01L27/3244
摘要： The invention provides a circuit section of a TFT layer disposed behind an adjacent EL display device, so that a gap defined between pixels at peripheries of the adjacent EL display devices may be 10 &mgr;m. Thus, four EL display devices appear to be unified, forming a large EL display panel. In addition, in the case in which a plurality of EL display devices are arranged in a matrix pattern, pitch between the pixels provided in the pixel section of the TFT array is maintained constant.
摘要翻译：本发明提供了设置在相邻EL显示装置后面的TFT层的电路部分，使得在相邻EL显示装置的周边处的像素之间限定的间隙可以为10um。因此，四个EL显示装置似乎是统一的，形成一个大的EL显示面板。此外，在多个EL显示装置以矩阵图形排列的情况下，设在TFT阵列的像素部分中的像素之间的间距保持恒定。

87. 发明授权

US06617627B2 Memory cell array having ferroelectric capacitors, method of fabricating the same, and ferroelectric memory device. 有权
标题翻译：具有铁电电容器的存储单元阵列，其制造方法和铁电存储器件。
公开(公告)号：US06617627B2
公开(公告)日：2003-09-09
申请号：US09931915
申请日：2001-08-20
申请人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
发明人： Eiji Natori , Kazumasa Hasegawa , Koichi Oguchi , Takao Nishikawa , Tatsuya Shimoda
IPC分类号： H01L31062
CPC分类号： H01L28/55 , G11C11/22 , H01L27/101
摘要： The present invention relates to: a memory cell array which is capable of decreasing the parasitic capacitance or load capacitance of signal electrodes and has ferroelectric layers making up ferroelectric capacitors and having a predetermined pattern; a method of fabricating the memory cell array, and a ferroelectric memory device. In the memory cell array, memory cells formed of ferroelectric capacitors are arranged in a matrix. The ferroelectric capacitors include first signal electrodes, second signal electrodes arranged in a direction intersecting the first signal electrodes, and ferroelectric layers disposed linearly along either the first signal electrodes or the second signal electrodes. Alternatively, the ferroelectric layers may be disposed only in intersection areas of the first and second signal electrodes.
摘要翻译：本发明涉及一种存储单元阵列，其能够降低信号电极的寄生电容或负载电容，并且具有构成铁电电容器并具有预定图案的铁电层; 一种制造该存储单元阵列的方法和一种铁电存储器件。在存储单元阵列中，由铁电电容器形成的存储单元被布置成矩阵。铁电电容器包括第一信号电极，沿与第一信号电极交叉的方向排列的第二信号电极，以及沿第一信号电极或第二信号电极线性配置的铁电层。或者，铁电层可以仅设置在第一和第二信号电极的交叉区域中。

88. 发明授权

US06573920B2 Method of manufacturing a printer with an electroluminescent (EL) pixel array 有权
公开(公告)号：US06573920B2
公开(公告)日：2003-06-03
申请号：US10244188
申请日：2002-09-16
申请人： Tatsuya Shimoda , Takao Nishikawa
发明人： Tatsuya Shimoda , Takao Nishikawa
IPC分类号： B41J2385
CPC分类号： H04N1/508 , B41J2/45 , G03G2215/0174
摘要： A method of manufacturing a printer with an EL pixel array as a latent image light source, comprising: forming an EL pixel array on a substrate; separating the EL pixel array from the substrate; affixing the separated EL pixel array to substantially completely surround the outside of a photoconductive drum; forming a charge generating layer above the EL pixel array; and forming a charge transfer layer above the charge generating layer.

89. 发明授权

US06557020B1 Information processing system, enciphering/deciphering system, system LSI, and electronic apparatus 失效
标题翻译：信息处理系统，加密/解密系统，系统LSI和电子设备
公开(公告)号：US06557020B1
公开(公告)日：2003-04-29
申请号：US09367234
申请日：1999-10-13
申请人： Kazuhiko Amano , Tsugio Nakamura , Hiroshi Kasahara , Tatsuya Shimoda
发明人： Kazuhiko Amano , Tsugio Nakamura , Hiroshi Kasahara , Tatsuya Shimoda
IPC分类号： G06F738
CPC分类号： G06F7/57 , G06F7/535 , G06F7/723 , G06F21/72 , G06F2207/3816 , G06F2207/5353 , G06F2221/2149
摘要： An information processing system that is configured in such a manner that computational processing is performed on input data in accordance with a processing sequence, for outputting data, comprises: a plurality of arithmetic units (7-1 to 7-x), each computing at an arithmetic precision 2m bits (where m is a natural number) based on the processing sequence; and a plurality of cascade connection terminals for cascading these arithmetic units each other. When the maximum arithmetic precision that is required during computational processing is 2n bits (where n is a natural number and is fixed), x numbers of (where x is a natural number) the arithmetic units are cascaded in a manner such that the inequality x≧2n/2m is satisfied. When an arithmetic precision of 2n1 bits (where n1≦n, and n1 is variable) is necessary during computational processing, x1 numbers of the arithmetic units are cascaded in a manner such that the inequality x1≧2n1/2m (where x1 is a natural number and is variable) is satisfied. This makes it possible to easily implement an information processing system for performing computations to any desired precision in a hardware manner, and also makes it possible to support a simple hardware-based method of expanding the arithmetic precision.
摘要翻译：一种信息处理系统，其被配置为使得根据用于输出数据的处理序列对输入数据进行计算处理的方式包括：多个运算单元（7-1至7-x），每个运算单元基于处理顺序的算术精度为2m比特（其中m为自然数）以及用于将这些算术单元彼此级联的多个级联连接端子。当计算处理期间所需的最大算术精度是2n位（其中n是自然数并且是固定的）时，运算单元的x数（其中x是自然数）是以不等式x > = 2n / 2m。当计算处理期间需要2n1位（其中n1 <= n和n1是可变的）的算术精度时，以不等式x1> = 2n1 / 2m（其中x1为自然数和变量）是满足的。这使得可以容易地实现用于以硬件方式执行任何期望精度的计算的信息处理系统，并且还可以支持扩展算术精度的简单的基于硬件的方法。

90. 发明授权

US5843570A Magneto-optical recording medium having large kerr rotational angle in short wavelength range 失效
标题翻译：在短波长范围内具有较大克尔旋转角度的磁光记录介质
公开(公告)号：US5843570A
公开(公告)日：1998-12-01
申请号：US789393
申请日：1997-01-29
申请人： Hiromu Miyazawa , Shoji Hoshina , Satoshi Shimokawato , Masaaki Ichikawa , Masaya Ishida , Takeo Kawase , Toshiaki Mikoshiba , Satoshi Nebashi , Tatsuya Shimoda
发明人： Hiromu Miyazawa , Shoji Hoshina , Satoshi Shimokawato , Masaaki Ichikawa , Masaya Ishida , Takeo Kawase , Toshiaki Mikoshiba , Satoshi Nebashi , Tatsuya Shimoda
IPC分类号： G11B11/105 , G11B5/66
CPC分类号： G11B11/10593 , G11B11/10582 , G11B11/10586 , Y10S428/90 , Y10T428/26 , Y10T428/265
摘要： In a magneto-optical recording medium, a protective layer 14, a first magnetic layer 11 formed of a light rare earth element-heavy rare earth element-transition metal alloy, a second magnetic layer 12 formed of a light rare earth element-heavy rare earth element-transition metal alloy, a third magnetic layer 13 formed of a light rare earth element-heavy rare earth element-transition metal alloy, another protective layer 15, and a reflection layer 16 are laminated in sequence on a transparent substrate 10. The first, second and third magnetic layers are sandwiched so as to form a recording film 17. The compositions of the first and third magnetic layers are so selected as to provide a large Kerr rotational angle in a short wavelength range (400 to 700 nm), which is high in the ratio of light rare earth element. On the other hand, the composition of the second magnetic layer is so selected as to be prominent in the characteristics for forming a perpendicular magnetized film, which is high in the ratio of heavy rare earth element. The recording film 17 formed by sandwiching the first, second and third magnetic layers has a large Kerr rotational angle in a short wavelength range as a whole, and further provides a high coercivity. The recording film 17 is formed thin (400 angstrom or less) so that light can transmit sufficiently therethrough. Further, when the three layers of sandwich structure is combined with the reflection layer 16, a more larger Kerr rotational angle can be obtained.
摘要翻译：在磁光记录介质中，由轻稀土元素重稀土元素过渡金属合金形成的保护层14，第一磁性层11，由稀土稀土元素重稀土形成的第二磁性层12 接地元素 - 过渡金属合金，由轻稀土元素 - 重稀土元素 - 过渡金属合金形成的第三磁性层13，另一个保护层15和反射层16依次层叠在透明基板10上。第一，第二和第三磁性层被夹持以形成记录膜17.第一和第三磁性层的组成被选择为在短波长范围（400-700nm）内提供较大的克尔旋转角，其中轻稀土元素的比例高。另一方面，第二磁性层的组成被选择为在用于形成重稀土元素的比率高的垂直磁化膜的特性方面是突出的。通过夹持第一，第二和第三磁性层而形成的记录膜17整体上在短波长范围内具有较大的克尔旋转角度，并进一步提供高的矫顽力。记录膜17形成为薄（400埃或更小），使得光可以充分透过。此外，当三层夹层结构与反射层16组合时，可以获得更大的克尔旋转角。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式