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    • 81. 发明申请
      US20070082884A1 Selective serine/threonine kinase inhibitors 有权
    • Selective serine/threonine kinase inhibitors
    • 选择性丝氨酸/苏氨酸激酶抑制剂
    • US20070082884A1
    • 2007-04-12
    • US10552847
    • 2004-04-12
    • Jack Taunton , Michael Cohen , Kevan Shokat , Chao Zhang
    • Jack Taunton , Michael Cohen , Kevan Shokat , Chao Zhang
    • A61K31/55 , A61K31/519 , A61K31/517 , A61K31/407 , A61K31/404
    • C07D487/04
    • Inhibition of protein kinases having one or more cysteine residues within the ATP binding site is effected by contacting the kinase, per se or in a cell or subject, with an inhibitory-effective amount of a compound having a heterocyclic core structure comprised of two or more fused rings containing at least one nitrogen ring atom, and an electrophilic substituent that is capable of reacting with a cysteine residue within the ATP binding site of a kinase. Preferred compounds include certain pyrrolopyrimidines and oxindoles having such an electrophilic substituent and optionally an aromatic or heteroaromatic substituent that is capable of interacting with a threonine or smaller residue located in the gatekeeper position of the kinase. Kinases lacking such cysteine residues may be engineered or modified so that they are capable of being inhibited by such compounds by replacing a valine or other amino acid residue within the ATP binding site by a cysteine residue.
    • 在ATP结合位点内具有一个或多个半胱氨酸残基的蛋白激酶的抑制通过使本身或细胞或受试者中的激酶与抑制有效量的具有由两个或更多个的杂环核心结构组成的化合物接触来实现 含有至少一个氮环原子的稠环，以及能够与激酶的ATP结合位点内的半胱氨酸残基反应的亲电取代基。 优选的化合物包括具有这样的亲电子取代基的某些吡咯并嘧啶和羟吲哚，以及任选的能够与位于激酶的关守位置的苏氨酸或更小残基相互作用的芳族或杂芳族取代基。 缺乏这种半胱氨酸残基的激酶可以被改造或修饰，使得它们能够被这种化合物抑制，通过用半胱氨酸残基替换ATP结合位点内的缬氨酸或其它氨基酸残基。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Global Dossier Espacenet 法律信息 同族专利 专利引用
    • 86. 发明授权
      US06714569B2 Design of optical superlattice to realize third-harmonic generation and multi-wavelength laser output and its application in the all-solid state laser 有权
    • Design of optical superlattice to realize third-harmonic generation and multi-wavelength laser output and its application in the all-solid state laser
    • US06714569B2
    • 2004-03-30
    • US10038518
    • 2002-01-03
    • Shining Zhu , Jingliang He , Yongyuan Zhu , Huitian Wang , Guozheng Ruo , Chao Zhang , Yiqiang Qin , Naiben Ming
    • Shining Zhu , Jingliang He , Yongyuan Zhu , Huitian Wang , Guozheng Ruo , Chao Zhang , Yiqiang Qin , Naiben Ming
    • H11S310
    • B82Y20/00 , G02F1/017 , G02F1/37 , H01S3/08 , H01S3/1601
    • The design of a special type of optical superlattice and its application in the all-solid state laser is involved in this invention. Nd ions doped laser crystal in common use can radiate three relatively intense spectral lines when excited: the first wavelength is around 900 nm; the second wavelength is around 1064 nm; the third wavelength is around 1300 nm, whose accurate wavelength are depended on their host crystal (for example, to Nd:YAG, they are 946 nm, 1064 nm and 1319 nm, respectively). On the other hand, for LiNbO3 (LN), LiTaO3 (LT), KTP and other ferroelectric crystals, the positive and negative 180° ferroelectric domains in these crystals can be arranged orderly according to certain sequence via crystal growth, electric field poling, and other state-of-the-art domain reversion technique, forming superlattice that is applicable to quasi-phase-matching (QPM) laser frequency conversion. This invention aims at the design of optical superlattice that can realize third-harmonic generation and coupled parametric process for such three emitting lines of Nd doped crystals and its application in the all-solid state laser. Such a superlattice, which can provide two or more effective reciprocal vectors, can participate in two or more QPM optical parametric processes. Different optical parametric processes in this kind of superlattice can couple each other via cascade effect. Therefore this type of superlattice can be used as an especial frequency-conversion crystal to acquire high-order harmonic generation of laser; in addition, it can realize the simultaneous output of multicolor laser or make the output of laser tunable by quasi-phase-matched frequency down-conversion. For instance, it is applicable to the frequency-conversion devices of all-solid state blue or ultraviolet laser, red-blue or green-ultraviolet dual color laser, and red-green-blue three fundamental colors laser, and can also be used as the source of entangled photon pair in the quantum telecommunication. The scheme can be extended to other active ions (such as Er, Yb, Tm, Sm etc.) doped laser crystal comprised in an all solid-state laser system.
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
    • 90. 发明授权
      US08476085B1 Method of fabricating dual trench isolated epitaxial diode array 有权
    • Method of fabricating dual trench isolated epitaxial diode array
    • 制造双沟槽隔离外延二极管阵列的方法
    • US08476085B1
    • 2013-07-02
    • US13203135
    • 2011-06-23
    • Chao Zhang , Zhitang Song , Xudong Wan , Bo Liu , Guanping Wu , Ting Zhang , Zuoya Yang , Zhifeng Xie
    • Chao Zhang , Zhitang Song , Xudong Wan , Bo Liu , Guanping Wu , Ting Zhang , Zuoya Yang , Zhifeng Xie
    • H01L21/00
    • H01L21/76205 , H01L21/76224 , H01L27/0814
    • The present invention discloses a method of fabricating dual trench isolated epitaxial diode array. This method starts with the formation of heavily-doped first conductivity type regions and heavily-doped second conductivity type regions on the substrate, followed by epitaxial growth, then the formation of the isolations between diode array word lines by deep trench etch and the formation of the isolations between bit lines vertical to deep trenches by shallow trench etch, and finally the formation of separate diode array cells in the regions enclosed by deep and shallow trench isolations by ion implantation. This invention also provides a method of preventing the crosstalk current between adjacent word lines and bit lines of epitaxial diode arrays isolated by foregoing dual shallow trenches. This invention can be used for diode-driven, high-density, large-capacity memory, such as phase change random access memory, resistive memory, magnetic memory and ferroelectric memory; the method thereof is completely compatible with conventional complementary metal-oxide semiconductor (CMOS) process, and because the diode arrays can be formed before the formation of peripheral circuits, no drift of peripheral circuits will be caused by the thermal process thereof, thereby solving the technical challenge of fabricating high-density, large-capacity embedded phase change random access memory.
    • 本发明公开了一种制造双沟槽隔离外延二极管阵列的方法。 该方法开始于在衬底上形成重掺杂的第一导电类型区域和重掺杂的第二导电类型区域，随后进行外延生长，然后通过深沟槽蚀刻形成二极管阵列字线之间的隔离，并形成 通过浅沟槽蚀刻垂直于深沟槽的位线之间的隔离，最后通过离子注入由深和浅沟槽隔离所包围的区域中形成分离的二极管阵列单元。 本发明还提供了一种防止由前述的双浅沟槽隔离的外延二极管阵列的相邻字线和位线之间的串扰电流的方法。 本发明可用于二极管驱动，高密度，大容量存储器，如相变随机存取存储器，电阻存储器，磁存储器和铁电存储器; 其方法与常规的互补金属氧化物半导体（CMOS）工艺完全兼容，并且由于可以在外围电路形成之前形成二极管阵列，所以不会由于其热处理而引起外围电路的漂移，从而解决了 制造高密度，大容量嵌入式相变随机存取存储器的技术挑战。
    • 基本信息 添加关注 加入工作空间 PDF全文 PDF下载 全文下载 相似专利 双屏查看 权利要求书 说明书全文 Espacenet 法律信息 同族专利 专利引用
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