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81. 发明授权

US07018506B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07018506B2
公开(公告)日：2006-03-28
申请号：US10458239
申请日：2003-06-11
申请人： Toshiaki Hongoh , Naoki Matsumoto , Chishio Koshimizu
发明人： Toshiaki Hongoh , Naoki Matsumoto , Chishio Koshimizu
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/321 , C23C16/507 , H01J37/32091
摘要： A plasma processing apparatus comprises a plate that separates a high frequency induction antenna from a vacuum chamber. The plate comprises a nonmagnetic metal plate that has an opening and a dielectric material member that seals the opening. The area of the nonmagnetic metal plate is larger than the area of the dielectric material member.
摘要翻译：等离子体处理装置包括将高频感应天线与真空室分离的板。板包括具有开口的非磁性金属板和密封开口的电介质材料构件。非磁性金属板的面积大于介电材料构件的面积。

82. 发明申请

US20050145879A1 Nitride semiconductor wafer and method of processing nitride semiconductor wafer 有权
标题翻译：氮化物半导体晶片和氮化物半导体晶片的加工方法
公开(公告)号：US20050145879A1
公开(公告)日：2005-07-07
申请号：US11055599
申请日：2005-02-11
申请人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
发明人： Masahiro Nakayama , Naoki Matsumoto , Koshi Tamamura , Masao Ikeda
IPC分类号： B24B37/00 , C30B29/38 , H01L21/20 , H01L21/304 , H01L21/306 , H01L33/00 , H01L21/00
CPC分类号： H01L21/02008 , B24B37/08 , H01L21/02024 , Y10S438/959
摘要： Nitride semiconductor wafers which are produced by epitaxially grown nitride films on a foreign undersubstrate in vapor phase have strong inner stress due to misfit between the nitride and the undersubstrate material. A GaN wafer which has made by piling GaN films upon a GaAs undersubstrate in vapor phase and eliminating the GaAs undersubstrate bends upward due to the inner stress owing to the misfit of lattice constants between GaN and GaAs. Ordinary one-surface polishing having the steps of gluing a wafer with a surface on a flat disc, bringing another surface in contact with a lower turntable, pressing the disc, rotating the disc, revolving the turntable and whetting the lower surface, cannot remedy the inherent distortion. The Distortion worsens morphology of epitaxial wafers, lowers yield of via-mask exposure and invites cracks on surfaces. Nitride crystals are rigid but fragile. Chemical/mechanical polishing has been requested in vain. Current GaN wafers have roughened bottom surfaces, which induce contamination of particles and fluctuation of thickness. Circular nitride wafers having a diameter larger than 45 mm are made and polished. Gross-polishing polishes the nitride wafers in a pressureless state with pressure less than 60 g/cm2 by lifting up the upper turntable for remedying distortion. Distortion height H at a center is reduced to H≦12 μm. Minute-polishing is a newly-contrived CMP which polishes the nitride wafers with a liquid including potassium hydroxide, potassium peroxodisulfate and powder, irradiates the potassium peroxodisulfate with ultraviolet rays. The CMP-polished top surface has roughness RMS of 0.1 nm≦RMS≦5 nm or more favorably 0.1 nm≦RMS≦0.5 nm. The CMP-polished bottom surface has roughness RMS of 0.1 nm≦RMS≦5000 nm or more favorably 0.1 nm≦RMS≦2 nm. TTV is less than 10 μm.
摘要翻译：由氮化物和下衬底材料之间的失配导致的，由外延生长的氮化物膜在气相中的外来下衬衬底产生的氮化物半导体晶片具有很强的内部应力。通过在气相中在GaAs下衬底上堆叠GaN膜而消除GaAs下衬层而制成的GaN晶片由于内部应力而由于GaN和GaAs之间的晶格常数的失配而向上弯曲。通常的单面抛光具有将晶片与平面盘上的表面胶合的步骤，使另一表面与下转台接触，按压盘，旋转盘，旋转转台并磨削下表面，不能补救固有失真。失真会加剧外延晶片的形态，降低通孔掩模曝光的产量，并引起表面裂纹。氮化物晶体是刚性但脆弱的。化学/机械抛光已被要求徒劳。当前的GaN晶圆已经粗糙化了底面，这引起了颗粒的污染和厚度的波动。制造和抛光直径大于45mm的圆形氮化物晶片。通过抬起上转盘来补偿变形，粗抛光在压力低于60g / cm 2的无压状态下抛光氮化物晶片。中心处的失真高度H降低到H <= 12 mum。分钟抛光是一种新设计的CMP，它们用含氢氧化钾，过氧硫酸钾和粉末的液体对氮化物晶片进行抛光，用紫外线照射过氧二硫酸钾。 CMP抛光的顶表面的粗糙度RMS为0.1nm <= RMS <= 5nm或更优选为0.1nm <= RMS <= 0.5nm。 CMP抛光的底表面的粗糙度RMS为0.1nm <= RMS <= 5000nm或更优选为0.1nm <= RMS <= 2nm。 TTV小于10妈

83. 发明申请

US20050093101A1 Method of Manufacturing Nitride Substrate for Semiconductors, and Nitride Semiconductor Substrate 有权
标题翻译：制造半导体用氮化物基板的方法和氮化物半导体基板
公开(公告)号：US20050093101A1
公开(公告)日：2005-05-05
申请号：US10904213
申请日：2004-10-29
申请人： Naoki Matsumoto
发明人： Naoki Matsumoto
IPC分类号： H01L21/3065 , C30B29/40 , C30B33/00 , H01L21/20 , H01L21/205 , H01L21/304 , H01L21/306 , H01L29/26 , H01L21/335
CPC分类号： C30B29/406 , C30B33/00
摘要： In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, warp will be a large ±40 μm to ±100 μm. Since with that warp device fabrication by photolithography is challenging, reducing the warp to +30 μm to −20 μm is the goal. The surface deflected concavely is ground to impart to it a damaged layer that has a stretching effect, making the surface become convex. The damaged layer on the surface having become convex is removed by etching, which curtails the warp. Alternatively, the convex surface on the side opposite the surface having become convex is ground to generate a damaged layer. With the concave surface having become convex due to the damaged layer, suitably etching off the damaged layer curtails the warp.
摘要翻译：在通过使用气相沉积在基底杂质上形成GaN层然后除去基底而制造的独立的GaN膜中，由于热膨胀系数和晶格常数的层间的不一致，翘曲将大到±40μm ±100 mum 由于通过光刻制造的翘曲装置是具有挑战性的，所以将翘曲减少至+30μm至-20μm是目标。将凹面偏转的表面研磨成具有拉伸效果的损伤层，使表面变凸。通过蚀刻来去除表面上变得凸起的损伤层，这削弱了翘曲。或者，与已经变得凸起的表面相对的一侧的凸表面被研磨以产生受损层。由于损伤层由于凹面变得凸起，因此适当地蚀刻掉损伤层以缩短翘曲。

84. 发明授权

US06448952B1 Stereoscopic image display device 失效
标题翻译：立体图像显示装置
公开(公告)号：US06448952B1
公开(公告)日：2002-09-10
申请号：US09490106
申请日：2000-01-24
申请人： Akito Toyoda , Kenji Yamamoto , Masaaki Ozaki , Naoki Matsumoto
发明人： Akito Toyoda , Kenji Yamamoto , Masaaki Ozaki , Naoki Matsumoto
IPC分类号： H04N1500
CPC分类号： G09G3/3644 , G09G3/3633 , H04N13/161 , H04N13/341 , H04N13/398 , H04N2013/0077
摘要： A device for displaying a stereoscopic image in which cross-talk is suppressed. A left eye image and a right eye image alternately displayed on a liquid crystal display panel are viewed through an eye shutter having a left eye and a right eye shutter which are alternately switched. The image is displayed on the panel by sequentially supplying scanning voltages on a scanning electrode array and supplying image data voltages on a data electrode array in synchronism with the scanning voltages. The display panel is divided into an upper part and a lower part which are scanned separately in opposite directions. The left eye image is displayed in the first field during which all scanning electrodes in both parts are scanned, and the right eye image is similarly displayed in the second field following the first field. A certain time interval is provided between the first and second fields, while properly setting the eye shutter switching timing. Thus, cross-talk images are displayed only in limited regions close to upper and lower edges of the display panel. The display panel may be scanned in a single scanning method, and the displayed image may be held with a lower brightness to suppress the cross-talk images.
摘要翻译：用于显示其中抑制串扰的立体图像的装置。交替显示在液晶显示面板上的左眼图像和右眼图像通过交替切换的具有左眼和右眼快门的眼睛快门观察。通过在扫描电极阵列上依次提供扫描电压并且与扫描电压同步地在数据电极阵列上提供图像数据电压来在面板上显示图像。显示面板被分成上下部分，它们沿相反方向分开扫描。在第一场中显示左眼图像，在第一场中扫描两部分中的所有扫描电极，并且在第一场后的第二场中类似地显示右眼图像。在适当设置眼睛快门切换定时的同时，在第一和第二场之间提供一定的时间间隔。因此，串扰图像仅在靠近显示面板的上边缘和下边缘的有限区域中显示。可以以单一扫描方式扫描显示面板，并且可以以较低的亮度保持所显示的图像，以抑制串扰图像。

85. 发明授权

US06251189B1 Substrate processing apparatus and substrate processing method 有权
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US06251189B1
公开(公告)日：2001-06-26
申请号：US09502219
申请日：2000-02-11
申请人： Shigeru Odake , Naoki Matsumoto , Shinya Morita , Kouji Tometsuka
发明人： Shigeru Odake , Naoki Matsumoto , Shinya Morita , Kouji Tometsuka
IPC分类号： C23C1600
CPC分类号： H01L21/67115 , C23C16/44 , C30B25/14 , Y10S156/912
摘要： The present invention is constituted so as to improve a quartz gas supply portion utilized in a normal pressure furnace, and to keep to a minimum the damage incurred by a normal pressure furnace by the shock from an earthquake. Quartz gas supply piping 25 for supplying a reactant gas is connected to a quartz reaction tube 4, which constitutes a furnace body. A stress concentration portion 23 for concentrating stress by prioritizing another location when vibration occurs in a furnace body is formed on this gas supply piping 25. The stress concentration portion 23 is disposed on the side of a source-side gas supply pipe 8, which is in front of a pipe clamp 21 that connects the source-side gas supply pipe 8 to a reaction tube-side gas supply pipe 7 mounted to the reaction tube 4. As a stress concentration portion 23, the simplest of V-grooves can be formed in the circumferential direction.
摘要翻译：本发明构成为改善在常压炉中使用的石英气体供给部，并且通过来自地震的冲击使至少由常压炉引起的损坏保持在最低限度。用于供给反应气体的石英气体供给配管25与构成炉体的石英反应管4连接。在该气体供给配管25上形成有用于在炉体中发生振动时将其它位置优先排列的应力集中部23。应力集中部23配置在源侧气体供给管8的一侧在连接源侧气体供给管8与安装在反应管4上的反应管侧气体供给管7的管夹21的前方。作为应力集中部23，可以形成最简单的V形槽在圆周方向。

86. 发明授权

US5575347A Suspension device for crawler vehicle 失效
标题翻译：履带车悬挂装置
公开(公告)号：US5575347A
公开(公告)日：1996-11-19
申请号：US400021
申请日：1995-02-28
申请人： Kouichi Uchibaba , Naoki Matsumoto , Hajime Yoshimura
发明人： Kouichi Uchibaba , Naoki Matsumoto , Hajime Yoshimura
IPC分类号： B60G5/04 , B62D55/02 , B62D55/104 , B62D55/00
CPC分类号： B60G5/04 , B62D55/02 , B62D55/104
摘要： A suspension device in a crawler vehicle has a vehicle body, a pair of parallel spaced swing beams mounted on a rear portion of the vehicle body by a suspension for angular movement about a first axis located substantially longitudinally centrally thereof, a rear idle wheel rotatably supported on a front portion of each of the swing beams for rotation about a second axis, a rear drive wheel rotatably supported on a rear portion of each of the swing beams for rotation about a third axis, a crawler belt trained around the rear idle wheel and the rear drive wheel, and a front wheel rotatably mounted on a front portion of the vehicle body. The distance from the second axis to the first axis is greater than the distance from the first axis to the third axis. The second axis is positioned on a front end of each of the swing beams, and the third axis is positioned between the first axis and a rear end of each of the swing beams. Preferably, the distance from the second axis to the first axis and the distance from the first axis to the third axis have a ratio of about 2:1.
摘要翻译：履带式车辆中的悬挂装置具有车身，一对平行的间隔开的摆动梁，其通过悬架而安装在车身的后部，所述悬架用于围绕位于其大致纵向居中的第一轴线的角度运动，后空转轮可旋转地支撑在每个摆动梁的前部分上围绕第二轴线旋转，后驱动轮可旋转地支撑在每个摆动梁的后部围绕第三轴线旋转;围绕后空转轮的履带; 后驱动轮和可旋转地安装在车身前部的前轮。从第二轴到第一轴的距离大于从第一轴到第三轴的距离。第二轴位于每个摆动梁的前端，第三轴位于每个摆动梁的第一轴线和后端之间。优选地，从第二轴线到第一轴线的距离以及从第一轴线到第三轴线的距离具有约2:1的比率。

87. 发明授权

US09791169B2 Liquid heater 有权
公开(公告)号：US09791169B2
公开(公告)日：2017-10-17
申请号：US14088693
申请日：2012-05-24
申请人： Minoru Uchida , Haruyoshi Yamakawa , Naoki Matsumoto
发明人： Minoru Uchida , Haruyoshi Yamakawa , Naoki Matsumoto
IPC分类号： F24H1/12 , F24H1/14 , F24H9/00 , F24H9/20
CPC分类号： F24H1/121 , F24H1/142 , F24H9/0015 , F24H9/2028
摘要： The invention is directed to a liquid heater for rapidly heating a liquid without overheating the liquid. The liquid heater comprises a liquid flow channel having a passage through which liquid flows, a heating part disposed outside the liquid flow channel, a heat reflecting part facing a heat radiating side of the heating part, and a cooling part through which a cooling medium flows adjacent a reverse side of a reflecting surface of the heat reflecting part for cooling the heat reflecting part. Radiant heat not absorbed in the liquid is reflected by the heat reflecting part. The heat reflecting part reflects radiant heat cooled by the cooling part so that the body of the liquid heater and peripheral members are maintained at a temperature not higher than a predetermined temperature to prevent overheating the liquid.

88. 发明授权

US09209015B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US09209015B2
公开(公告)日：2015-12-08
申请号：US12783312
申请日：2010-05-19
申请人： Tetsuo Yamamoto , Naoki Matsumoto , Koichi Honda
发明人： Tetsuo Yamamoto , Naoki Matsumoto , Koichi Honda
IPC分类号： C23C16/00 , H01L21/306 , C23F1/00 , H01L21/02 , C23C16/34 , C23C16/455 , C23C16/50 , H01J37/32 , C23C16/52
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/45544 , C23C16/45578 , C23C16/50 , C23C16/52 , H01J37/32009 , H01J37/32357 , H01J37/3244 , H01J2237/3321 , H01L21/0214 , H01L21/0228
摘要： Provided is a substrate processing apparatus, which comprises a process chamber configured to process a substrate, a first plasma generation chamber in the process chamber, a first reactive gas supply unit configured to supply first reactive gas into the first plasma generation chamber, a pair of first discharge electrodes configured to generate plasma and to excite the first reactive gas, a first gas ejection port installed in a side wall of the first plasma generation chamber to eject an active species toward the substrate, a second plasma generation chamber in the process chamber, a second reactive gas supply unit configured to supply second reactive gas into the second plasma generation chamber, a pair of second discharge electrodes configured to generate plasma and to excite the second reactive gas, and a second gas ejection port installed in a side wall of the second plasma generation chamber to eject an active species.
摘要翻译：提供了一种基板处理装置，其包括处理基板的处理室，处理室中的第一等离子体生成室，被配置为将第一反应气体供应到第一等离子体产生室中的第一反应气体供给单元，第一放电电极，被配置为产生等离子体并激发第一反应气体;第一气体喷出口，安装在第一等离子体产生室的侧壁中，以向基板喷射活性物质;处理室中的第二等离子体产生室; 第二反应气体供给单元，被配置为将第二反应气体供应到第二等离子体产生室中;一对第二放电电极，被配置为产生等离子体并激发第二反应气体;以及第二气体喷出口，其安装在第二等离子体产生室的侧壁中第二等离子体产生室以喷射活性物质。

89. 发明授权

US08753475B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08753475B2
公开(公告)日：2014-06-17
申请号：US12366907
申请日：2009-02-06
申请人： Naoki Matsumoto , Jun Yoshikawa , Masaru Sasaki , Kazuyuki Kato , Masafumi Shikata , Shingo Takahashi
发明人： Naoki Matsumoto , Jun Yoshikawa , Masaru Sasaki , Kazuyuki Kato , Masafumi Shikata , Shingo Takahashi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/32238
摘要： Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25positioned uprightly above the inclined surfaces 16a and 16b.
摘要翻译：提供了通过限定电介质和槽之间的位置关系而具有高度改进的等离子体点火性能和点火稳定性的等离子体处理装置。等离子体处理装置11包括具有顶部开口的处理室12; 电介质15，其底面上具有倾斜面16a，16b，使得厚度尺寸依次变化，并设置成封闭处理室12的顶部开口; 以及天线24，其布置在电介质15的顶表面上，用于向电介质15提供微波，从而在电介质15的底表面处产生等离子体。此外，天线24设置有多个槽25，表面16a和16b。

90. 发明授权

US08603293B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US08603293B2
公开(公告)日：2013-12-10
申请号：US13186145
申请日：2011-07-19
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ohya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Yoshinobu Ohya , Manabu Iwata , Daisuke Yano , Yohei Yamazawa , Hidetoshi Hanaoka , Toshihiro Hayami , Hiroki Yamazaki , Manabu Sato
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma processing apparatus includes a processing container, an exhaust unit, an exhaust plate, an RF power application unit connected to a second electrode but not connected to the first electrode and configured to apply an RF power with a single frequency, the second electrode being connected to no power supply that applies an RF power other than the RF power with the single frequency, a DC power supply connected to the first electrode but not connected to the second electrode, the first electrode being connected to no power supply that applies an RF power, and a conductive member within the process container grounded to release through plasma a current caused by the DC voltage, the conductive member supported by the first shield part and laterally protruding therefrom only at a position that is located, in a height-wise direction, between a mount face and the exhaust plate and below a bottom of a focus ring.
摘要翻译：等离子体处理装置包括处理容器，排气单元，排气板，连接到第二电极但未连接到第一电极并被配置为施加具有单一频率的RF功率的RF功率施加单元，第二电极为连接到没有施加除了单个频率的RF功率之外的RF功率的电源，连接到第一电极但没有连接到第二电极的直流电源，第一电极连接到不施加RF的电源功率和处理容器内的导电构件接地，以通过等离子体释放由直流电压引起的电流，导电构件由第一屏蔽部分支撑并且仅在位于高度方向的位置处侧向突出在安装面和排气板之间以及聚焦环的底部之下。

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