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    • 81. 发明专利
    • Microphone
    • 麦克风
    • JPS59152793A
    • 1984-08-31
    • JP2683283
    • 1983-02-18
    • Matsushita Electric Ind Co Ltd
    • FUJIMURA KATSUNORIMATSUMOTO MICHIO
    • H04R1/00H01S5/00H04R23/00
    • H04R23/008
    • PURPOSE:To stabilize photovoice conversion by reflecting laser light by a diaphragm arranged in parallel with output plane of a semiconductor laser controlled to a prescribed temperature, feeding back the light positively to an active substance in the laser and photoelectric-converting the output change caused by interference. CONSTITUTION:The laser light is reflected in rsponse to acoustic vibration on a diaphragm 21 arranged in parallel with the output plane of the semiconductor laser 22. The reflected laser light is fed back positively to the active substance of the laser 22, the output causing a change by interference is led to an optical fiber 19, photoelectric-converted and amplified by a circuit (not shown), and outputted as a voice current through a band pass filter. On the other hand, a temperature sensor 17 is provided near the semiconductor laser 22 and the temperature is kept constant by changing the direction of current of a Peltier element 18 foward and reverse so as to heat or cool the laser 22. Further, a corrugated heat sink 20 is formed. Then, the mode jumping of the semiconductor element due to temperature change is prevented for stabilizing the output.
    • 目的:通过与被控制在规定温度的半导体激光器的输出平面平行设置的光阑反射激光来稳定照相变换,将光反射回激光中的活性物质,并对由 干扰。 构成:在与半导体激光器22的输出平面平行布置的隔膜21上的声波反射中反射激光。反射的激光被正反馈地馈送到激光器22的活性物质,输出引起 通过干扰的变化被导入光纤19,被光电转换并由电路(未示出)放大,并通过带通滤波器作为语音电流输出。 另一方面,在半导体激光器22的附近设置有温度传感器17,通过改变珀耳帖元件18的电流方向并反向来保持温度恒定,从而加热或冷却激光器22.此外,波纹状 形成散热器20。 然后,防止由于温度变化导致的半导体元件的模式跳跃,从而使输出稳定。
    • 83. 发明专利
    • MICROPHONE DEVICE
    • JPS57203400A
    • 1982-12-13
    • JP8788481
    • 1981-06-08
    • MATSUSHITA ELECTRIC IND CO LTD
    • MATSUMOTO MICHIO
    • H04R23/00
    • PURPOSE:To perform the positioning of a vibration diap]hragm with high accuracy in terms of the distance and the parallelism, by controlling the position of the vibration diaphragm to a semiconductor laser in terms of the distance and the parallelism with the static electricity obtained by applying the voltage between the vibration diaphragm and an electrode. CONSTITUTION:A vibration diaphragm 13 is previously set in parallel to the position at the front of an output of a semiconductor laser 10 with a space secured to the laser 10. The voltage is applied between the film 13 and a back plate electrode 12 to obtain the static electricity. The diaphragm 13 is attracted to the electrode 12, i.e., toward the semiconductor 10. In this case, the bias voltage that is decided in a single way and applied between the diaphragm 13 and a center electrode 31 of the electrode 12. The distance between the diaphragm 13 and the semiconductor 10 is decided by the electrostatic power. At the same time, the voltage is applied occasionally between the diaphragm 13 and each of the electrodes 32-35 of the electrode 12. With the electrostatic power thus obtained, the parallelism is decided between the diaphragm 13 and the semiconductor laser 10 at the center part.