专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US08085825B2 Method of fabricating semiconductor laser diode apparatus and semiconductor laser diode apparatus 失效
标题翻译：制造半导体激光二极管装置和半导体激光二极管装置的方法
公开(公告)号：US08085825B2
公开(公告)日：2011-12-27
申请号：US12043724
申请日：2008-03-06
申请人： Masayuki Hata , Yasumitsu Kunoh , Yasuyuki Bessho
发明人： Masayuki Hata , Yasumitsu Kunoh , Yasuyuki Bessho
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/0216 , H01L2224/48247 , H01S5/0201 , H01S5/0217 , H01S5/0224 , H01S5/0425 , H01S5/22 , H01S5/32341 , H01S5/4031 , H01S5/4087 , H01S2304/04
摘要： A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.
摘要翻译：获得了当半导体激光二极管部分的宽度小时也能够抑制半导体激光二极管处理困难的半导体激光二极管装置。这种制造半导体激光二极管装置的方法包括以下步骤：在与第一方向交叉的第二方向上以规定的间隔在第一基板上形成多个第一半导体激光二极管部分，其中第一方向与空腔延伸，将多个第一半导体激光二极管部分的第一半导体激光二极管部分分配到第二基板，将与第二基板接合的多个第一半导体激光二极管部分中的一个或一些与第一基板分离; 以及沿着所述第二方向分割所述第二基板。

82. 发明授权

US08064492B2 Method of manufacturing semiconductor laser device, semiconductor laser device and light apparatus 失效
标题翻译：制造半导体激光装置的方法，半导体激光装置及照明装置
公开(公告)号：US08064492B2
公开(公告)日：2011-11-22
申请号：US12693169
申请日：2010-01-25
申请人： Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
发明人： Yasuyuki Bessho , Hiroki Ohbo , Kunio Takeuchi , Seiichi Tokunaga , Yasumitsu Kunoh , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , B82Y20/00 , G11B7/1275 , G11B7/22 , H01L2224/16145 , H01L2224/48091 , H01L2224/73257 , H01L2224/73265 , H01S5/0202 , H01S5/02212 , H01S5/0224 , H01S5/02272 , H01S5/02276 , H01S5/028 , H01S5/0425 , H01S5/22 , H01S5/2214 , H01S5/34333 , H01S5/4087 , H04N9/3161 , H01L2924/00014
摘要： A method of manufacturing a semiconductor laser device comprises steps of forming a first semiconductor laser device substrate having first grooves for cleavage on a surface thereof, bonding a second semiconductor laser device substrate onto the surface side having the first grooves and thereafter cleaving the first and second semiconductor laser device substrates along at least the first grooves.
摘要翻译：一种制造半导体激光器件的方法包括以下步骤：形成第一半导体激光器件衬底，其具有用于在其表面上切割的第一凹槽，将第二半导体激光器件衬底接合到具有第一沟槽的表面侧上，然后切割第一和第二沿着至少第一凹槽的半导体激光器件衬底。

83. 发明授权

US08013344B2 Method of manufacturing semiconductor device and semiconductor device 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US08013344B2
公开(公告)日：2011-09-06
申请号：US12186168
申请日：2008-08-05
申请人： Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata
发明人： Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata
IPC分类号： H01L27/15
CPC分类号： H01L33/025 , B82Y20/00 , H01L33/32 , H01S5/0206 , H01S5/2201 , H01S5/2214 , H01S5/2231 , H01S5/3202 , H01S5/34333 , H01S2301/173
摘要： A method of manufacturing a semiconductor device includes steps of forming a semiconductor device layer on an upper surface of a substrate including the upper surface, a lower surface and a dislocation concentrated region arranged so as to part a first side closer to the upper surface and a second side closer to the lower surface, exposing a portion where the dislocation concentrated region does not exist above on the lower surface by removing the substrate on the second side along with at least a part of the dislocation concentrated region, and forming an electrode on the portion.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在包括上表面，下表面和位错集中区域的基板的上表面上形成半导体器件层，以便将第一侧部分靠近上表面部分，以及第二侧更靠近下表面，通过沿着位错集中区域的至少一部分去除第二侧的基板，在下表面上方露出位错集中区域不存在的部分，并且在第二侧上形成电极一部分。

84. 发明授权

US07961768B2 Integrated semiconductor laser device and method of fabricating the same 失效
标题翻译：集成半导体激光器件及其制造方法
公开(公告)号：US07961768B2
公开(公告)日：2011-06-14
申请号：US12256854
申请日：2008-10-23
申请人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Hiroaki Izu , Tsutomu Yamaguchi , Hiroki Ohbo , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An integrated semiconductor laser device capable of improving the properties of a laser beam and reducing the cost for optical axis adjustment is provided. This integrated semiconductor laser device comprises a first semiconductor laser element including a first emission region and having either a projecting portion or a recess portion and a second semiconductor laser element including a second emission region and having either a recess portion or a projecting portion. Either the projecting portion or the recess portion of the first semiconductor laser element is fitted to either the recess portion or the projecting portion of the second semiconductor laser element.
摘要翻译：提供了能够提高激光束的特性并降低光轴调整成本的集成半导体激光装置。该集成半导体激光器件包括包括第一发射区域并且具有突出部分或凹部的第一半导体激光器元件和包括第二发射区域并且具有凹部或突出部分的第二半导体激光元件。第一半导体激光元件的突出部或凹部都嵌入第二半导体激光元件的凹部或凸部。

85. 发明授权

US07939929B2 Semiconductor laser device and method of fabricating semiconductor laser device 失效
标题翻译：半导体激光器件及半导体激光器件的制造方法
公开(公告)号：US07939929B2
公开(公告)日：2011-05-10
申请号：US11529475
申请日：2006-09-29
申请人： Masayuki Hata
发明人： Masayuki Hata
IPC分类号： H01L23/52
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/0213 , H01S5/02272 , H01S5/02492 , H01S5/0425 , H01S5/2009 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2301/176 , H01S2304/04 , H01S2304/12
摘要： A semiconductor laser device includes a supporting substrate; a semiconductor laser device portion which is formed on a surface of the supporting substrate, and which includes a pair of cavity surfaces; an adhesive layer with which the supporting substrate and the semiconductor laser device portion are adhered to each other; and areas, in which no adhesive layer exists, the areas being near the ends respectively of the cavity surfaces, the ends being closer to the supporting substrate.
摘要翻译：半导体激光装置包括：支撑基板; 半导体激光器件部分，其形成在所述支撑基板的表面上，并且包括一对空腔表面; 支撑基板和半导体激光装置部分彼此粘合的粘合层; 以及其中没有粘合剂层的区域，分别位于空腔表面的端部附近的区域，端部更靠近支撑衬底。

86. 发明授权

US07903709B2 Semiconductor laser device and method of manufacturing the same 失效
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US07903709B2
公开(公告)日：2011-03-08
申请号：US12357282
申请日：2009-01-21
申请人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
发明人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2201
摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
摘要翻译：半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部，在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度的第一区域以外的区域。

87. 发明授权

US07892874B2 Nitride-based light-emitting device and method of manufacturing the same 有权
标题翻译：氮化物系发光元件及其制造方法
公开(公告)号：US07892874B2
公开(公告)日：2011-02-22
申请号：US12495122
申请日：2009-06-30
申请人： Tatsuya Kunisato , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
发明人： Tatsuya Kunisato , Ryoji Hiroyama , Masayuki Hata , Kiyoshi Oota
IPC分类号： H01L21/00 , H01L31/12
CPC分类号： H01L33/0079 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/44 , H01L2933/0016
摘要： A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer bonded to the conductive substrate.
摘要翻译：提供了能够抑制光输出特性的降低以及制造成品率的降低的氮化物系发光元件。这种氮化物系发光器件包括至少含有单一类型金属的导电衬底和具有比金属低的线性膨胀系数的单一类型的无机材料和与导电衬底结合的氮化物基半导体元件层。

88. 发明申请

US20110013659A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20110013659A1
公开(公告)日：2011-01-20
申请号：US12919847
申请日：2009-02-25
申请人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
发明人： Kunio Takeuchi , Yasumitsu Kunoh , Masayuki Hata
IPC分类号： H01S5/028 , H01L21/30
CPC分类号： H01S5/10 , B82Y20/00 , H01L2224/48463 , H01L2224/73265 , H01S5/0202 , H01S5/0215 , H01S5/0217 , H01S5/0224 , H01S5/02276 , H01S5/028 , H01S5/1064 , H01S5/3211 , H01S5/34333 , H01S5/4031
摘要： A semiconductor laser device having a cladding layer in the vicinity of an active layer capable of being inhibited from cracking is obtained. This semiconductor laser device (100) includes a first semiconductor device portion (120) and a support substrate (10) bonded to the first semiconductor device portion, and the first semiconductor device portion has a cavity, a first conductivity type first cladding layer (22) having a first region (22a) having a first width in a second direction (direction A) intersecting with a first direction (direction B) in which the cavity extends and a second region (22b) having a second width smaller than the first width in the second direction, formed on the first region, and a first active layer (23) and a second conductivity type second cladding layer (24) formed on the second region of the first cladding layer.
摘要翻译：获得具有能够抑制裂纹的有源层附近的包覆层的半导体激光装置。该半导体激光器件（100）包括接合到第一半导体器件部分的第一半导体器件部分（120）和支撑衬底（10），并且第一半导体器件部分具有腔体，第一导电类型的第一覆盖层（22 ）具有第一区域（22a），所述第一区域（22a）在与所述空腔延伸的第一方向（方向B）相交的第二方向（方向A）上具有第一宽度，以及具有小于所述第一宽度的第二宽度的第二区域形成在第一区域上的第二方向，以及形成在第一包层的第二区域上的第一有源层（23）和第二导电型第二覆盖层（24）。

89. 发明授权

US07829900B2 Nitride-based semiconductor element and method of forming nitride-based semiconductor 有权
标题翻译：基于氮化物的半导体元件和形成氮化物基半导体的方法
公开(公告)号：US07829900B2
公开(公告)日：2010-11-09
申请号：US12071978
申请日：2008-02-28
申请人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
发明人： Masayuki Hata , Tatsuya Kunisato , Nobuhiko Hayashi
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02576 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01S5/0207 , H01S5/22 , H01S5/2214 , H01S5/227 , H01S5/34333 , H01S2304/12
摘要： A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.
摘要翻译：获得具有优异的质量生产率和优异的元件特性的氮化物基半导体元件。该氮化物系半导体元件包括基板，该基板包括具有突出部的表面，形成为仅与基板的表面的突出部接触的掩模层，形成在基板的凹部的第一氮化物系半导体层以及形成在具有元件区域的第一氮化物系半导体层上的掩模层和氮化物系半导体元件层。因此，具有低位错密度的第一氮化物基半导体层通过用于选择生长的掩模层容易地形成在衬底和掩模层的突出部分上。当在具有低位错密度的第一氮化物基半导体层上生长具有元素区域的氮化物基半导体元件层时，可以容易地获得具有优异元素特性的氮化物基半导体元件。第一氮化物基半导体层仅通过基板上的单一生长形成，从而获得具有优异的批量生产率的氮化物基半导体元件。

90. 发明授权

US07773654B2 Semiconductor laser apparatus and fabrication method thereof 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07773654B2
公开(公告)日：2010-08-10
申请号：US11092947
申请日：2005-03-30
申请人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
发明人： Yasuyuki Bessho , Masayuki Hata , Daijiro Inoue , Tsutomu Yamaguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01S5/4087
摘要： A blue-violet semiconductor laser device has a first p-electrode formed on its upper surface and a first n-electrode formed on its lower surface. A red semiconductor laser device has a second n-electrode formed on its upper surface and a second p-electrode formed on its lower surface. An infrared semiconductor laser device has a third n-electrode formed on its upper surface and a third p-electrode formed on its lower surface. Solder films are partially formed on the upper surface of the first p-electrode in the blue-violet semiconductor laser device. Two of the solder films are formed with a predetermined distance between them on the upper surface of the first p-electrode. This results in a portion of the first p-electrode being exposed. The first, second and third p-electrodes of the blue-violet semiconductor laser device, red semiconductor laser device, and infrared semiconductor laser device are common electrodes.
摘要翻译：蓝紫色半导体激光器件具有在其上表面上形成的第一p电极和形成在其下表面上的第一n电极。红色半导体激光器件具有在其上表面上形成的第二n电极和形成在其下表面上的第二p电极。红外半导体激光器件具有在其上表面上形成的第三n电极和形成在其下表面上的第三p电极。在蓝紫色半导体激光器件中的第一p电极的上表面部分地形成焊料膜。两个焊料膜在第一p电极的上表面之间以它们之间的预定距离形成。这导致第一p电极的一部分被暴露。蓝紫色半导体激光器件的第一，第二和第三p电极，红色半导体激光器件和红外半导体激光器件是公共电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式