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    • 85. 发明授权
    • Organic light emitting device with corrugated light emitting layer
    • 带有波纹发光层的有机发光装置
    • US06661034B2
    • 2003-12-09
    • US09832974
    • 2001-04-12
    • Takeo Kawase
    • Takeo Kawase
    • H01L3300
    • H01L51/5262H01L51/0014H01L51/0017H01L51/5203H01L2251/105
    • A light emitting device formed of a substrate having first and second regions, a first non-transparent electrode formed on the substrate in the first region, a layer of organic light emitting material provided over the first non-transparent electrode in the first region, a layer of organic light emitting material provided over the substrate in the second region, the light emitting materials each having at least one planar surface which is corrugated, a second non-transparent electrode formed over the light emitting material in the first region, and a mirror formed over the light emitting material in the second region. A device having a stacked structure of electrodes and light emitting layers is also disclosed, as are various methods of fabricating the devices.
    • 一种由具有第一和第二区域的基板形成的发光器件,在第一区域中形成在基板上的第一非透明电极,设置在第一区域中的第一非透明电极之上的有机发光材料层, 在所述第二区域中的所述基板上设置的有机发光材料层,所述发光材料各自具有波纹状的至少一个平坦表面,形成在所述第一区域中的所述发光材料上的第二非透明电极,以及反射镜 形成在第二区域中的发光材料上。 还公开了具有电极和发光层的堆叠结构的器件,以及制造器件的各种方法。
    • 86. 发明授权
    • Magneto-optical media
    • 磁光介质及其制造方法
    • US5667887A
    • 1997-09-16
    • US85474
    • 1993-06-28
    • Hiromu MiyazawaShinya OotsukiTakeo KawaseSatoshi Nebashi
    • Hiromu MiyazawaShinya OotsukiTakeo KawaseSatoshi Nebashi
    • G11B11/10G11B11/105G11B5/66B05D5/12
    • G11B11/10586G11B11/10591G11B11/10593Y10S428/90Y10T428/26Y10T428/265
    • The present invention relates to a magneto-optical media. More particularly, the present invention relates to a device for assuring a high S/N ratio by controlling the optical phase difference of the media by optimizing the film structure of a multi-layered thin film. The structure of the multi-layered thin film is such that the first protective film of a thickness between 400 .ANG. and 700 .ANG., a recording film of a thickness between 150 .ANG. and 300 .ANG., the second protective film of a thickness between 150 .ANG. and 250 .ANG., and a reflecting film of a thickness between 400 .ANG. and 800 .ANG., are successively laminated on a substrate. The first protective layer and the second protective layer are both suitably made of AlSiN, SiN, or SiO.sub.2 having refractivity between 1.95 and 2.05. The recording layer has a composition:Nd.sub.x Dy.sub.y (FeCo).sub.100-x-y,orNd.sub.x (DyTb).sub.y (Fe.sub.1-z Co.sub.z).sub.100-x-y,where25 at %.ltoreq.x+y.ltoreq.30 at %,0 at %.ltoreq.x.ltoreq.8 at %, and0.07 at %.ltoreq.z.ltoreq.0.43 at %.
    • 本发明涉及一种磁光介质。 更具体地,本发明涉及通过优化多层薄膜的膜结构来控制介质的光学相位差来确保高S / N比的装置。 多层薄膜的结构使得厚度在400至700之间的第一保护膜,厚度介于150至300之间的记录膜,厚度在150和第二层之间的第二保护膜, 250 ANGSTROM和厚度在400和800之间的反射膜依次层压在基片上。 第一保护层和第二保护层均适宜地由折射率在1.95和2.05之间的AlSiN,SiN或SiO 2制成。 记录层具有Nd x D y y(FeCo)100-xy或Nd x(DyTb)y(Fe 1-z Co z)100-xy的组成,其中25at%
    • 89. 发明授权
    • Semiconductor device, active matrix device, electro-optical device, and electronic apparatus
    • 半导体器件,有源矩阵器件,电光器件和电子设备
    • US08174016B2
    • 2012-05-08
    • US12764320
    • 2010-04-21
    • Takeo Kawase
    • Takeo Kawase
    • H01L29/04H01L51/00
    • H01L27/1288H01L27/124H01L27/1285H01L27/1292
    • A method of manufacturing a semiconductor device includes: forming, on one surface of a substrate, source electrodes and drain electrodes, a semiconductor layer provided between the source electrodes and the drain electrodes, and a gate insulator layer provided to cover a surface of the semiconductor layer; forming an insulator layer on a surface of the gate insulator layer, the insulator layer having through portions; and forming electrodes on the gate insulator layer around the bottom of the through portions and on the insulator layer in the vicinity of the through portions by a vapor film formation method simultaneously so as not to come into contact with each other, forming gate electrodes by using the electrodes formed on the gate insulator layer, and forming pixel electrodes electrically connected to the source electrodes or the drain electrodes by using the electrodes foamed on the insulator layer.
    • 一种制造半导体器件的方法包括:在基板的一个表面上形成源电极和漏电极,设置在源电极和漏电极之间的半导体层,以及设置成覆盖半导体的表面的栅极绝缘体层 层; 在所述栅极绝缘体层的表面上形成绝缘体层,所述绝缘体层具有贯通部分; 以及在贯通部分的底部周围的栅极绝缘体层上形成电极,并且通过蒸气成膜法在贯通部分附近的绝缘体层上形成电极,以便不会彼此接触,通过使用 所述电极形成在所述栅极绝缘体层上,并且通过使用在所述绝缘体层上发泡的电极来形成与所述源电极或所述漏电极电连接的像素电极。