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81. 发明授权

US4694799A Ignition timing control system for internal combustion engines 失效
标题翻译：内燃机点火正时控制系统
公开(公告)号：US4694799A
公开(公告)日：1987-09-22
申请号：US787750
申请日：1985-10-15
申请人： Shizuo Yagi , Yoshiaki Hirosawa , Makoto Kawai , Isao Fujii
发明人： Shizuo Yagi , Yoshiaki Hirosawa , Makoto Kawai , Isao Fujii
IPC分类号： F02P5/152 , F02P5/145 , F02P5/153 , F02P5/14
CPC分类号： F02D35/023 , F02P5/1455 , F02D35/028 , Y02T10/46
摘要： An ignition timing control system for an internal combustion engine includes a crank angle detector for producing a first pulse signal indicative of a reference crank angle position of the crankshaft and a second pulse signal indicative of a crank angle position that changes constantly with rotation of the crankshaft, an ideal crank angle detector for producing an output signal based on the first and second pulse signals and indicative of an ideal crank angle position at which pressure internal of the engine cylinder attains a peak value, pressure sensing means for producing an output signal indicative of the peak pressure value, a phase difference detector for producing an output signal indicative of the phase difference between the ideal crank angle position signal and the peak pressure value signal, first ignition timing control means for producing an output signal indicative of optimum ignition timing which is in accordance with the phase difference output signal, and second ignition timing control means for controlling ignition timing to a fixed value during actuation of the engine starter.
摘要翻译：一种用于内燃机的点火正时控制系统包括：一个曲柄角检测器，用于产生指示曲轴的基准曲柄角位置的第一脉冲信号;以及第二脉冲信号，该第二脉冲信号表示随曲轴转动而不断变化的曲柄角位置一个理想的曲柄角检测器，用于基于第一和第二脉冲信号产生输出信号，并指示发动机气缸内部压力达到峰值的理想曲柄角位置;压力检测装置，用于产生指示峰值压力值，用于产生指示理想曲柄角位置信号和峰值压力值信号之间的相位差的输出信号的相位差检测器，用于产生表示最佳点火正时的输出信号的第一点火正时控制装置，根据相位差输出信号和第二点火在定时控制装置中，用于在发动机起动器的致动期间将点火正时控制到固定值。

82. 发明授权

US4259741A Satellite relay system 失效
标题翻译：卫星中继系统
公开(公告)号：US4259741A
公开(公告)日：1981-03-31
申请号：US17254
申请日：1979-03-05
申请人： Makoto Kawai
发明人： Makoto Kawai
IPC分类号： H03H7/20 , H01P5/04 , H01P5/12 , H01Q3/30 , H03H11/36 , H04B7/204 , H04B7/185
CPC分类号： H03H11/36 , H04B7/2046
摘要： A satellite relay system for Time Division Multiple Access (TDMA) utilizing a beam scanning technique has been found. According to the present invention a plurality of antennas each relating to the corresponding earth station have a narrow spot beam with sharp directivity. Each of the up-link bursts (a signal from an earth station to a satellite) is simply combined, and a single-channel TDMA signal is obtained. Said TDMA signal is then divided into a plurality of signals by a power divider after frequency conversion. Each of said signals is processed by a variable phase shifter, the output of which is applied to a power amplifier. A 2n-port directional coupler having n number of input terminals and n number of output terminals is provided and each of said input terminals is connected to the output of the corresponding power amplifier. Each of the output signals of the 2n-port directional coupler provides a down-link burst and is connected to the corresponding transmission antenna which has a sharp directivity covering only a single specific earth station. The 2n-port directional coupler is composed of a plurality of couplers or hybrid circuits.
摘要翻译：已经发现利用光束扫描技术的用于时分多址（TDMA）的卫星中继系统。根据本发明，与对应的地球站相关的多个天线具有具有尖锐方向性的窄点波束。每个上行链路突发（来自地球站到卫星的信号）被简单组合，并且获得单信道TDMA信号。所述TDMA信号在频率转换之后被功率分配器分成多个信号。每个所述信号由可变移相器处理，其输出被施加到功率放大器。提供具有n个输入端子和n个输出端子的2n端口定向耦合器，并且每个所述输入端子连接到相应的功率放大器的输出端。 2n端口定向耦合器的每个输出信号提供下行链路脉冲串，并且连接到具有仅覆盖单个特定地球站的尖锐方向性的相应发射天线。 2n端口定向耦合器由多个耦合器或混合电路组成。

83. 发明授权

US4215846A Multiportion unitary valve seat and valve incorporating it 失效
标题翻译：多端口单阀阀座和阀门结合
公开(公告)号：US4215846A
公开(公告)日：1980-08-05
申请号：US889872
申请日：1978-03-23
申请人： Mitsumasa Ishizuka , Makoto Kawai
发明人： Mitsumasa Ishizuka , Makoto Kawai
IPC分类号： F16K3/22 , F16K1/22 , F16K5/06 , F16K25/00
CPC分类号： F16K1/2007 , F16K1/2078 , F16K1/221 , F16K1/2268
摘要： The disclosed valve seat is a unitary member consisting of a rigid annular portion supported from an annular base portion by a resilient, annular, wall-like connecting portion. In the disclosed valve, this base portion is secured in the valve housing to space the noted three portions concentrically along the fluid flow path through the housing. As the cooperating eccentrically-rotated valve plug contacts the seating portion, the plug exerts a force on the seating portion which converges the walls of the connecting portion. This prevents jamming between the plug and the seating portion while permitting a tight fluid seal to be established between those parts. A preferred shape (FIG. 2) for the connecting portion which provides such jam-free but tight fluid sealing action is that of a truncated cone having its larger inner diameter at the base portion of the seat member and its smaller inner diameter at the seating portion of the seat member.
摘要翻译：所公开的阀座是由通过弹性的，环形的壁状连接部分从环形基部支撑的刚性环形部分组成的整体构件。在所公开的阀中，该基部固定在阀壳体中，以使所述三个部分沿流体流动通道通过外壳同心地间隔。当配合的偏心旋转的阀塞接触座位部分时，插头在座位部分上施加一个力，会聚在连接部分的壁上。这可以防止塞子和座位部分之间的卡塞，同时允许在这些部件之间建立紧密的流体密封。用于连接部分的优选形状（图2），其提供这种无堵塞但紧密的流体密封作用是在座椅构件的基部处具有较大内径的座台和座椅的较小内径座椅构件的一部分。

84. 发明申请

US20130197219A1 SUBSTITUTED POLYCYCLIC CARBAMOYL PYRIDONE DERIVATIVE PRODRUG 有权
公开(公告)号：US20130197219A1
公开(公告)日：2013-08-01
申请号：US13824723
申请日：2011-09-21
申请人： Chika Takahashi , Hidenori Mikamiyama , Toshiyuki Akiyama , Kenji Tomita , Yoshiyuki Taoda , Makoto Kawai , Kosuke Anan , Masayoshi Miyagawa , Naoyuki Suzuki
发明人： Chika Takahashi , Hidenori Mikamiyama , Toshiyuki Akiyama , Kenji Tomita , Yoshiyuki Taoda , Makoto Kawai , Kosuke Anan , Masayoshi Miyagawa , Naoyuki Suzuki
IPC分类号： C07D471/04 , C07F9/6561
CPC分类号： C07D471/04 , A61K31/4738 , C07D471/14 , C07F9/6561 , C07F9/65616
摘要： The present invention provides a compound having antiviral effects, particularly having growth inhibitory activity on influenza viruses, a preferred example of the compound being a substituted 3-hydroxy-4-pyridone derivative prodrug having cap-dependent endonuclease inhibitory activity.

85. 发明授权

US08420503B2 Method for producing SOI substrate 有权
标题翻译： SOI衬底的制造方法
公开(公告)号：US08420503B2
公开(公告)日：2013-04-16
申请号：US12933113
申请日：2009-04-01
申请人： Shoji Akiyama , Makoto Kawai , Atsuo Ito , Yoshihiro Kubota , Kouichi Tanaka , Yuji Tobisaka , Hiroshi Tamura
发明人： Shoji Akiyama , Makoto Kawai , Atsuo Ito , Yoshihiro Kubota , Kouichi Tanaka , Yuji Tobisaka , Hiroshi Tamura
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L27/12
摘要： A method for easily manufacturing a transparent SOI substrate having: a main surface with a silicon film formed thereon; and a rough main surface located on a side opposite to a side where the silicon film is formed. A method for manufacturing transparent SOI substrate, having a silicon film formed on a first main surface of the transparent insulating substrate, while a second main surface of the transparent insulating substrate, an opposite to the first main surface, is roughened. The method includes at least the steps of: roughening the first main surface with an RMS surface roughness lower than 0.7 nm and the second main surface with an RMS surface roughness higher than the surface roughness of the first main surface to prepare the transparent insulating substrate; and forming the silicon film on the first main surface of the transparent insulating substrate.
摘要翻译：一种容易制造透明SOI衬底的方法，其具有：形成有硅膜的主表面; 以及位于与形成硅膜的一侧相反一侧的粗糙主表面。制造透明SOI衬底的方法，其中在透明绝缘衬底的第一主表面上形成硅膜，同时透明绝缘衬底的与第一主表面相反的第二主表面被粗糙化。该方法至少包括以下步骤：使RMS表面粗糙度低于0.7nm的第一主表面粗糙化，并且第二主表面的RMS表面粗糙度高于第一主表面的表面粗糙度，以制备透明绝缘基板; 以及在所述透明绝缘基板的所述第一主表面上形成所述硅膜。

86. 发明授权

US08357586B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08357586B2
公开(公告)日：2013-01-22
申请号：US12920363
申请日：2009-03-23
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuji Tobisaka , Hiroshi Tamura
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Kouichi Tanaka , Makoto Kawai , Yuji Tobisaka , Hiroshi Tamura
IPC分类号： H01L21/46 , H01L21/30 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/30608
摘要： Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.
摘要翻译：提供一种SOI晶片的制造方法，其能够：有效地除去通过离子注入剥离法剥离的剥离面附近的离子注入层中存在的离子注入缺陷层; 确保基板的面内均匀性; 并且还实现成本降低和更高的吞吐量。制造SOI晶片的方法至少包括以下步骤：将具有或不具有氧化物膜的硅晶片接合到处理晶片上以制备键合衬底，其中所述硅晶片具有通过注入氢离子形成的离子注入层和/ 或稀有气体离子进入硅晶片; 沿着离子注入层剥离硅晶片，从而将硅晶片转移到处理晶片上以产生剥离后的SOI晶片; 将剥离后的SOI晶片浸渍在氨 - 过氧化氢水溶液中; 并在浸渍的剥离后的SOI晶片上进行900℃以上的温度的热处理，和/或通过CMP研磨10〜50nm来研磨浸渍的剥离后的SOI晶片的硅膜层。

87. 发明授权

US08021910B2 Method for producing single crystal silicon solar cell and single crystal silicon solar cell 有权
标题翻译：单晶硅太阳能电池和单晶硅太阳能电池的制造方法
公开(公告)号：US08021910B2
公开(公告)日：2011-09-20
申请号：US11907902
申请日：2007-10-18
申请人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
发明人： Atsuo Ito , Shoji Akiyama , Makoto Kawai , Koichi Tanaka , Yuuji Tobisaka , Yoshihiro Kubota
IPC分类号： H01L21/00
CPC分类号： H01L31/1804 , H01L31/1896 , Y02B10/10 , Y02E10/547 , Y02P70/521
摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.
摘要翻译：一种单晶硅太阳能电池的制造方法，包括以下步骤：通过离子注入表面将离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 在透明绝缘体基板的表面上形成透明导电膜; 对透明绝缘体基板上的单晶硅衬底的离子注入表面和/或透明导电膜的表面进行表面激活处理; 将透明绝缘体基板上的单晶硅衬底的离子注入表面和透明导电膜的表面彼此接合; 对离子注入层施加冲击; 并在单晶硅层中形成p-n结。

88. 发明授权

US07977209B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07977209B2
公开(公告)日：2011-07-12
申请号：US12161819
申请日：2007-02-08
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/2007 , H01L27/1203 , H01L27/1214 , H01L29/78603
摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.
摘要翻译：将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时，晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。由于单晶硅衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

89. 发明申请

US20110111575A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20110111575A1
公开(公告)日：2011-05-12
申请号：US13010103
申请日：2011-01-20
申请人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji Akiyama , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/2007 , H01L27/1203 , H01L27/1214 , H01L29/78603
摘要： A heating plate having a smooth surface is placed on a hot plate which constitutes a heating section, and the smooth surface of the heating plate is closely adhered on the rear surface of a single-crystal Si substrate bonded to a transparent insulating substrate. The temperature of the heating plate is kept at 200° C. or higher but not higher than 350° C. When the rear surface of the single-crystal Si substrate bonded to the insulating substrate is closely adhered on the heating plate, the single-crystal Si substrate is heated by thermal conduction, and a temperature difference is generated between the single-crystal Si substrate and the transparent insulating substrate. A large stress is generated between the both substrates due to rapid expansion of the single-crystal Si substrate, thus separation takes place at a hydrogen ion-implanted interface.
摘要翻译：将具有光滑表面的加热板放置在构成加热部分的加热板上，并且加热板的光滑表面紧密地粘附在粘结到透明绝缘基板的单晶Si基板的背面上。加热板的温度保持在200℃以上但不高于350℃。当结合到绝缘基板的单晶Si衬底的后表面紧密地粘附在加热板上时，晶体硅衬底通过热传导加热，并且在单晶硅衬底和透明绝缘衬底之间产生温度差。由于单晶Si衬底的快速膨胀，在两个衬底之间产生大的应力，因此在氢离子注入界面处发生分离。

90. 发明申请

US20110111574A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20110111574A1
公开(公告)日：2011-05-12
申请号：US13010122
申请日：2011-01-20
申请人： Shoji AKIYAMA , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
发明人： Shoji AKIYAMA , Yoshihiro Kubota , Atsuo Ito , Makoto Kawai , Yuuji Tobisaka , Koichi Tanaka
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , C30B33/04 , H01L21/265
摘要： A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth.

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