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    • 81. 发明专利
    • INFRARED SOLID-STATE IMAGE SENSING DEVICE
    • JPS6467961A
    • 1989-03-14
    • JP22503387
    • 1987-09-08
    • MITSUBISHI ELECTRIC CORP
    • YUYA NAOKI
    • H01L27/14H04N5/33
    • PURPOSE:To eliminate an irregular output due to the difference of optical positions of infrared detectors and the incidence of a stray light from an infrared filter or the like to the detector by forming a light shielding film for limiting the visual angle of the detector on the rear face of a semiconductor substrate on which the detectors are arranged. CONSTITUTION:A light shielding film 9 for limiting the visual angles of infrared detectors 4a, 4b, 4c is formed on the rear face of a semiconductor substrate 7. The film 9 may be of any of films which do not transmit an infrared light, and is particularly preferably a metal film made of Al, Ti, Pt, Au, etc. As a result, infrared light 8 scattered on the end faces of infrared filters 6a, 6b, 6c is not incident to the detectors 4a, 4b, 4c. The difference of incident light quantities due to the difference of optical positions of the detector 4b disposed on the central axis of an optical system and the detectors 4a, 4c disposed out of the central axis can be eliminated by the film 9.
    • 82. 发明专利
    • SOLID-STATE IMAGE SENSOR
    • JPS6442169A
    • 1989-02-14
    • JP19857887
    • 1987-08-07
    • MITSUBISHI ELECTRIC CORP
    • YUYA NAOKI
    • H01L27/14H01L27/148H04N5/33H04N5/335H04N5/341H04N5/369H04N5/372H04N5/374
    • PURPOSE:To assure with ease a desired and controllable spectral characteristics by providing a reflecting/transparent film on optical detector means, the film being capable of selection of any wavelength. CONSTITUTION:A reflecting/transparent film 17 is formed on a Schottky junction part being a photoelectric transducer in opposition to the latter. The Schottky junction part is formed of a p-type substrate 6 and a metal side electrode 7 via an interlayer insulating film 14 of a predetermined depth being an insulating layer. And, infrared optical detector parts 16 each having the reflecting/ transparent film 17 are arranged adjoining to a transfer gate in parallel to each other. The infrared optical detector part 16 includes small inter-grid distance infrared optical detector parts 16a located on odd-numbered rows and large inter-grid distance infrared optical detector parts 16b on even-numbered rows, both being alternately arranged. That is, the reflecting/transparent film 17 serves as a reflecting filter which reflects long wavelength region components of the infrared ray and transmits short wavelength region components of the same where wavelength components are determined to be reflectable or transmittable depending upon a grid dimension. Thus, a desired long wavelength component can selectively be reflected and derived by selecting a predetermined grid size.
    • 83. 发明专利
    • SCHOTTKY TYPE PHOTODETECTOR
    • JPS63308391A
    • 1988-12-15
    • JP14583287
    • 1987-06-10
    • MITSUBISHI ELECTRIC CORP
    • YUYA NAOKI
    • H01L31/108H01L31/10
    • PURPOSE:To obtain a photocurrent utilizing both of first and second Schottky junctions and to contrive the improvement of photosensitivity by a method wherein an amorphous Si film is further joined to a metal electrode, which is joined to a substrate by the first Schottky junction, by the second Schottky junction. CONSTITUTION:Light 6 incided through the rear of a P-type Si substrate 1 is transmitted the substrate 1 to reach a metal electrode 2 and hot holes are formed in the electrode 2 by this light. The hot holes having an energy to cross the barrier of a first Schottky junction 12 among these hot holes flow in the substrate 1 to turn into a photocurrent. Moreover, the light having an energy to cross the barrier of a second Schottky junction 8 also flow in an amorphous Si film 7 to turn into a photocurrent. Moreover, parts of the incided light are transmitted the electrode 2 to incide in the film 7 and parts thereof are further reflected by a reflection film 9 to form a standing wave. Thereby, the improvement of sensitivity can be contrived.
    • 85. 发明专利
    • SOLID-STATE IMAGE SENSOR
    • JPS63221666A
    • 1988-09-14
    • JP5594187
    • 1987-03-10
    • MITSUBISHI ELECTRIC CORP
    • YUYA NAOKIYAGI HIROFUMI
    • H01L27/146H01L27/148H04N5/335H04N5/341H04N5/372
    • PURPOSE:To precisely specify the size of the metal electrodes of a Schottky barrier diode, to eliminate the irregularity in the shapes of the electrodes and to raise the opening rate of a photodetector by disposing the electrodes, transfer electrode and wirings of the transfer electrode of a transfer gate in contact with the electrodes at the periphery of the electrode of the diode in an electrically insulating manner. CONSTITUTION:Transfer electrodes 11, 12 for transferring signal charges formed of the polysilicons of first and second layers perpendicularly operate also as the gate electrodes of a transfer gate, and as scanning lines by connecting horizontally. The openings of the electrodes 11, 12 become those of photodetectors 2 of a Schottky barrier diodes. Accordingly, when the metal electrodes of the diode are formed, with the openings of the electrodes 11, 12 as masks a silicon oxide film of the part can be completely etched. After etching, when the metal, such as platinum or the like is deposited by a vacuum thermal depositing method, the electrodes 11, 2 and the metal electrode are not short-circuited, and the size of the metal electrode does not change.
    • 86. 发明专利
    • CHARGE TRANSFER DEVICE
    • JPS62128174A
    • 1987-06-10
    • JP26846185
    • 1985-11-28
    • MITSUBISHI ELECTRIC CORP
    • HINE SHIROHIROSE SATOSHIYAMAMOTO HIDEKAZUASAI SOTOHISAUENO MASAFUMIYUYA NAOKI
    • H01L29/762H01L21/339H01L27/14
    • PURPOSE:To easily differentiate the surface potentials of electrode transfer channel below respective transfer electrodes between respective transfer electrodes without increasing processes by a method wherein gate oxide film only is formed below the first transfer electrodes while forming the gate oxide film and a gate nitride film below the second transfer electrodes. CONSTITUTION:A gate oxide film 2 and a polysilicon film 3 are formed on the surface of substrate 1. First, multiple resist film patterns 5a are formed to form the first transfer electrodes 3a by selectively etching the polysilicon film 3 using the resist film patterns 5a as masks. Second, the resist film patterns 5a are removed to form an oxide film 4 by thermooxidizing the surface of the first electrodes 3a. Later a nitride film 6 is formed on the exposed surface of gate oxide film 2 and the surface of oxide film 4 by ECR type PECVD device further continuously forming an amorphous silicon film 7 on the surface of nitride film 6. Third, the amorphous silicon film 7 and the nitride film 6 are seccessively and selectively dryetched to form the second transfer electrodes 7a and a gate nitride films 6a using resist film patterns 8a as masks. Finally, the resist film patterns 8a are removed to form a two phase driving charge transfer device.
    • 88. 发明专利
    • SOLID-STATE IMAGE PICK-UP DEVICE
    • JPS61228667A
    • 1986-10-11
    • JP6882285
    • 1985-04-01
    • MITSUBISHI ELECTRIC CORP
    • HIROSE SATOSHIIWADE SHUHEIYUYA NAOKIISHIKURA HIDENOBU
    • H01L27/146H04N5/335H04N5/355H04N5/374
    • PURPOSE:To obtain a solid-state image pick-up device, in which a numerical aperture can be improved, the amount of a saturation signal is large and an accumulated signal can be amplified and read, by providing a specified MOS transistor photoelectric conversion element and a specified reading means. CONSTITUTION:Photoelectric conversion is performed by a P-N junction diode 14, which is formed by a source part 3, a drain part 4 and a back gate part 2 on a semiconductor substrate 1. A photoelectric conversion signal is accumulated in an MOS transistor photoelectric conversion element 30 by the potential change caused by incident light into the back gate part 2 in the floating state. The back gate part 2 in each photoelectric conversion element 30 is sequentially made to be in the floating state. When the threshold voltage of the MOS transistor 30 is changed by the potential change of the back gate part 2, a current flows in correspondence with the gate potential as a signal current. A reading means 40, which reads the signal current, is provided. Thus, the amount of the signal can be amplified and taken out, and the sensitivity is improved to a large extent. The solid-state image pick-up sensor having a large numerical aperture and the large dynamic range can be obtained.
    • 89. 发明专利
    • INFRARED RAY IMAGE SENSOR
    • JPS61216465A
    • 1986-09-26
    • JP5925285
    • 1985-03-22
    • MITSUBISHI ELECTRIC CORP
    • YUYA NAOKIIWADE SHUHEI
    • H04N5/33H01L27/14H01L31/0216H01L31/0264H01L31/09
    • PURPOSE:To perform a small package by using a silicon substrate transparent for an infrared ray as a package, and forming an infrared ray filter on the back surface of the substrate to eliminate the difference of thermal expansion coefficient between an infrared ray solid state image sensor and the package. CONSTITUTION:Since an infrared light is incident from the back surface of a silicon substrate 14 and the substrate 14 is transparent for the infrared ray, the infrared lights of wavelengths lambda1, lambda2, lambda3 are incident to infrared ray solid- state image sensors 11, 12, 13 through infrared ray filters 15, 16, 17, respectively. The terminals of the sensors 11, 12, 13 are led to the periphery of the substrate 14 by multilayer wirings formed on the front surface of the substrate 14. Since the common terminal of these terminals can be coupled by wirings in the substrate 14, the number of the terminals to be led t the periphery of the substrate 14 can be minimized as required. Thus, the difference of thermal expansion coefficient between the substrate of low temperature and the sensors is eliminated, and wirings led to the terminals of the sensors can be microminiaturized similarly to an integrated circuit, and multilayer wirings can be facilitated.
    • 90. 发明专利
    • SOLID-STATE IMAGE PICKUP DEVICE
    • JPS61214870A
    • 1986-09-24
    • JP5640385
    • 1985-03-20
    • MITSUBISHI ELECTRIC CORP
    • ISHIKURA HIDENOBUYUYA NAOKIHIROSE SATOSHIIWADE SHUHEI
    • H01L27/14H01L27/146H04N5/335H04N5/353H04N5/374
    • PURPOSE:To obtain a solid-state image pickup device which can constitute the small-sized light electronic still camera by providing an accumulating part to transfer the charge accumulated said photodetecting part besides the photodetecting part, in respective picture elements of the solid-state image pickup element. CONSTITUTION:The first-third scanning circuits 13-15, at the time t1 of starting the image pickup, generate the resetting pulse, turns on the gate of the first-third MOS transistors (TR)7-9, resets a photodetecting part 16 and an accumulating part 17 of all unit picture elements and sets the initial condition. A light carrier generated by the light to make incident during the desired shutter time t2-t1 is accumulated at the photo-detecting part 16 of the TR 7. Next, the circuit 13, in the time t2, generates a shutter pulse and turns on the gate of the TR 7 only once concerning all picture elements. Thus, in the time t2, the charge in proportion to the charge accumulated at the photodetecting part 16 is transferred to the accumulating part 17. In the same way, to scan all picture elements, circuits 14 and 15 also generate the pulse to turn on the gate of TRs 8 and 9 successively, and from the time t31, the data of respective picture elements are read.