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81. 发明授权

US06552209B1 Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films 有权
标题翻译：金属氧化物和金属氮化物薄膜的金属亚氨基/氨基络合物的制备
公开(公告)号：US06552209B1
公开(公告)日：2003-04-22
申请号：US10179818
申请日：2002-06-24
申请人： Xinjian Lei , John Anthony Thomas Norman
发明人： Xinjian Lei , John Anthony Thomas Norman
IPC分类号： C07F900
CPC分类号： C07F9/005
摘要： This invention relates to an improved process to produce metal imino/amino complexes having the formula R1N=M(NR2R3)3 where M is a pentavalent metal or (R1N=)2M′(NR2R3)2 where M′ is a hexavalent metal. In the process MX5 and two-equivalents of primary amine R1NH2 or metal hexahalide, M′X6 with seven-equivalents of primary amine H2NR1 are reacted in the presence of excess pyridine. The resulting reaction product R1N═MX3(py)2 or [(R1N)2M′X2(py)]2 then is followed by the addition of LiNR2R3. The process provides the final product in high yield and in high purity as well as representing a simplified procedure for synthesizing R1N═M(NR2 R3)3 or (R1N═)2M′(NR2R3)2type complexes.
摘要翻译：本发明涉及制备具有式R 1 N = M（NR 2 R 3）3的金属亚氨基/氨基络合物的改进方法，其中M是五价金属或（R1N =）2M'（NR2R3）2，其中M'是六价金属。在该方法中，MX5和2当量的伯胺R 1 NH 2或金属六氢化物，具有7当量伯胺H 2 N R 1的M'X 6在过量的吡啶的存在下反应。得到的反应产物R1N = MX3（py）2或[（R1N）2M'X2（py）] 2然后加入LiNR2R3。该方法以高产率和高纯度提供最终产物，以及代表合成R1N = M（NR2 R3）3或（R1N =）2M'（NR2R3）2型络合物的简化程序。

82. 发明授权

US08617305B2 Metal complexes for metal-containing film deposition 有权
标题翻译：含金属膜沉积的金属络合物
公开(公告)号：US08617305B2
公开(公告)日：2013-12-31
申请号：US13348228
申请日：2012-01-11
申请人： Xinjian Lei , Daniel P. Spence
发明人： Xinjian Lei , Daniel P. Spence
IPC分类号： C07F5/00 , C09D1/00 , C23C16/06 , C23C16/40 , C23C16/513 , C07C251/04 , C07C211/00 , C07F15/00 , C07F7/00 , C07F7/28
CPC分类号： C07F5/00 , C07F5/003
摘要： Novel families of tri-valent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium are disclosed. These metal complexes can be used as precursors to deposit metal or metal oxide films in semi-conductor industries.
摘要翻译：三价金属络合物的新族，包括钪，钇，镧，铈，镨，钕，钐，铕，钆，铽，镝，钬，铒，ium，镱，镥，矾，镓，铟，锰，锑，铋以及包括镁，钙，锶，钡，锰，钴，铁，镍，钌，铜，锌，镉的二价金属络合物。这些金属络合物可用作在半导体工业中沉积金属或金属氧化物膜的前体。

83. 发明授权

US08592606B2 Liquid precursor for depositing group 4 metal containing films 有权
标题翻译：用于沉积第4组含金属膜的液体前体
公开(公告)号：US08592606B2
公开(公告)日：2013-11-26
申请号：US12950352
申请日：2010-11-19
申请人： Xinjian Lei , John Anthony Thomas Norman , Daniel P. Spence
发明人： Xinjian Lei , John Anthony Thomas Norman , Daniel P. Spence
IPC分类号： C07F7/00 , C07F7/28 , C23C16/00
CPC分类号： C07F17/00 , C07F7/003
摘要： The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in η1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.
摘要翻译：本发明涉及一种由式（pyr *）M（OR1）（OR2）（OR3）表示的液体组4前体，其中pyr *是烷基取代的吡咯基，其中M是第4族金属包括Ti， Zr和Hf; 其中R1-3可以相同或不同，并且选自直链或支链C 1-6烷基; 优选C 1-3烷基; R4选自C1-6烷基，优选在2,5位取代的支链C3-5烷基，以防止以eta1方式与金属中心配位的吡咯啉; 最优选本发明涉及（2,5-二叔丁基吡咯基）（三（乙氧基）钛，（2,5-二叔戊基吡咯基）（三（乙氧基）钛本发明还涉及（环戊二烯基）（2,5-二甲基吡咯基）（双（乙氧基））钛。沉积方法也考虑使用这些化合物。

84. 发明申请

US20130066082A1 Metal-Enolate Precursors For Depositing Metal-Containing Films 有权
公开(公告)号：US20130066082A1
公开(公告)日：2013-03-14
申请号：US13418747
申请日：2012-03-13
申请人： John Anthony Thomas Norman , Xinjian Lei
发明人： John Anthony Thomas Norman , Xinjian Lei
IPC分类号： C07F7/28 , C23C16/448 , C23C16/44
CPC分类号： C07F17/00 , C23C16/18 , C23C16/405 , C23C16/45553
摘要： Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices.

85. 发明授权

US08313807B2 High coordination sphere group 2 metal β-diketiminate precursors 有权
标题翻译：高配位球第2组金属和重铬酸盐前体
公开(公告)号：US08313807B2
公开(公告)日：2012-11-20
申请号：US12535192
申请日：2009-08-04
申请人： John Anthony Thomas Norman , Xinjian Lei
发明人： John Anthony Thomas Norman , Xinjian Lei
IPC分类号： C23C16/00 , C07C257/00 , C09B67/00
CPC分类号： C07C211/14 , C07C217/40 , C07C225/06 , C23C16/18
摘要： The present invention is directed to high coordination sphere Group 2 metal β-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.
摘要翻译：本发明涉及高配位球2族金属和二铬酸盐组合物，例如双（N-（2,2-甲氧基乙基）-4-（2,2-甲氧基乙基亚氨基）-2-戊烯-2-氨基）钡; 以及通过化学气相沉积，脉冲化学气相沉积，分子层沉积或原子层沉积沉积这种金属配体组合物的金属，以产生第二族金属含有膜，例如钛酸钡锶膜或钛酸锶薄膜或掺杂钡的镧系元素作为电子设备制造的高k材料。

86. 发明申请

US20100119726A1 Group 2 Metal Precursors For Deposition Of Group 2 Metal Oxide Films 审中-公开
标题翻译：第2组金属前体用于沉积第2组金属氧化物膜
公开(公告)号：US20100119726A1
公开(公告)日：2010-05-13
申请号：US12266806
申请日：2008-11-07
申请人： Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , Michael Ulman
发明人： Xinjian Lei , Daniel P. Spence , John Anthony Thomas Norman , Michael Ulman
IPC分类号： C07C249/00 , C07D307/08 , C09D4/00 , B05D5/12 , C23C4/10
CPC分类号： C07C225/14 , C23C16/403 , C23C16/404
摘要： This invention is related to Group 2 metal-containing polydentate β-ketoiminate precursors and compositions comprising Group 2 metal-containing polydentate β-ketoiminate precursors, wherein the polydentate β-ketoiminate precursors incorporate an alkoxy group in the imino portion of the molecule. The compounds and compositions are useful for fabricating metal containing films on substrates such as silicon, metal nitride, metal oxide and other metal layers via chemical vapor deposition (CVD) processes.
摘要翻译：本发明涉及含有第2族金属的多齿骨架和酮基组合物前体和包含第2族金属的多齿骨架 - 酮基亚胺前体的组合物，其中多齿骨架和重沸石前体在分子的亚氨基部分中并入烷氧基。这些化合物和组合物可用于通过化学气相沉积（CVD）工艺在诸如硅，金属氮化物，金属氧化物和其它金属层的衬底上制造含金属膜。

87. 发明申请

US20100075067A1 Preparation of Metal Oxide Thin Film Via Cyclic CVD or ALD 有权
标题翻译：通过循环CVD或ALD制备金属氧化物薄膜
公开(公告)号：US20100075067A1
公开(公告)日：2010-03-25
申请号：US12410529
申请日：2009-03-25
申请人： Moo-Sung Kim , Xinjian Lei , Daniel P. Spence , Sang-Hyun Yang
发明人： Moo-Sung Kim , Xinjian Lei , Daniel P. Spence , Sang-Hyun Yang
IPC分类号： B01J19/08 , C23C16/44
CPC分类号： C23C16/409 , C23C16/45553
摘要： A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established.
摘要翻译：一种在衬底上形成金属氧化物膜的循环沉积工艺，其包括以下步骤：将金属酮亚胺引入淀积室并将金属酮嘧啶沉积在加热的衬底上; 清除沉积室以除去未反应的金属酮基甲酸酯和任何副产物; 将含氧源引入加热的基底; 清除沉积室以除去任何未反应的化学和副产物; 并重复循环沉积过程，直到建立所需的膜厚。

88. 发明申请

US20090130338A1 Group 2 Metal Precursors for Depositing Multi-Component Metal Oxide Films 有权
标题翻译：用于沉积多组分金属氧化物膜的第2组金属前体
公开(公告)号：US20090130338A1
公开(公告)日：2009-05-21
申请号：US12266058
申请日：2008-11-06
申请人： Xinjian Lei , Liam J. Quinn , Daniel P. Spence
发明人： Xinjian Lei , Liam J. Quinn , Daniel P. Spence
IPC分类号： B05D5/12 , C07F3/00
CPC分类号： C07C225/06 , C07F3/003 , C07F5/003 , C23C16/18
摘要： Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication.
摘要翻译：合成了含有β-二酮和N-甲基 - 吡咯烷酮的新型Sr和Ba配合物。 TGA实验表明这些配合物是挥发性的，它们可用作半导体制造中的ALD钛酸锶（STO）或钡锶钡膜（BST）膜的前体。

89. 发明申请

US20080286464A1 Group 2 Metal Precursors For Depositing Multi-Component Metal Oxide Films 审中-公开
标题翻译：用于沉积多组分金属氧化物膜的第2组金属前体
公开(公告)号：US20080286464A1
公开(公告)日：2008-11-20
申请号：US12113397
申请日：2008-05-01
申请人： Xinjian Lei , Liam J. Quinn , Daniel P. Spence
发明人： Xinjian Lei , Liam J. Quinn , Daniel P. Spence
IPC分类号： C23C16/18 , C07C43/02 , C07C233/00
CPC分类号： C07F5/003 , C07C225/06 , C23C16/404 , C23C16/405
摘要： Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as potential precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication.
摘要翻译：合成了含有β-二酮和N-甲基 - 吡咯烷酮的新型Sr和Ba配合物。 TGA实验表明这些络合物是挥发性的，它们可以用作半导体制造中的ALD钛酸锶（STO）或钡锶钡膜（BST）膜的潜在前体。

90. 发明申请

US20080143002A1 Splashguard and Inlet Diffuser for High Vacuum, High Flow Bubbler Vessel 有权
标题翻译：用于高真空，高流量泡罩容器的防溅和入口扩散器
公开(公告)号：US20080143002A1
公开(公告)日：2008-06-19
申请号：US11939109
申请日：2007-11-13
申请人： Thomas Andrew Steidl , Charles Michael Birtcher , Xinjian Lei
发明人： Thomas Andrew Steidl , Charles Michael Birtcher , Xinjian Lei
IPC分类号： B01F3/04
CPC分类号： C23C16/4482 , C23C16/448
摘要： The present invention is a bubbler having a diptube inlet ending in a bubble size reducing outlet and at least one baffle disc positioned between the outlet of the diptube and the outlet of the bubbler to provide a narrow annular space between the baffle disc and the wall of the bubbler to prevent liquid droplets from entering the outlet to the bubbler. The bubble size reducing outlet is an elongated cylindrical porous metal frit situated in a sump of approximately the same dimensions. A metal frit is placed at the inlet of the outlet of the bubbler. The present invention is also a process of delivering a chemical precursor from a bubbler vessel having the above structure.
摘要翻译：本发明是一种起泡器，其具有终止于气泡尺寸减小出口的二通孔入口和至少一个位于汲取管的出口和起泡器的出口之间的挡板，以在挡板和壁之间提供窄的环形空间起泡器以防止液滴进入出口到起泡器。气泡尺寸减小出口是位于大致相同尺寸的贮槽中的细长圆柱形多孔金属玻璃料。金属玻璃料放置在起泡器出口的入口处。本发明也是从具有上述结构的起泡容器输送化学前体的方法。

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