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    • 81. 发明授权
    • Inertia-responsive vehicle seat back latch mechanism
    • 惯性响应车辆座椅靠背闩锁机构
    • US4118067A
    • 1978-10-03
    • US750180
    • 1976-12-13
    • Akira Tanaka
    • Akira Tanaka
    • B60N2/433B60N1/02
    • B60N2/433
    • An inertia-responsive vehicle seat back latch mechanism for a vehicle seat assembly having a seat back pivotally supported for forwardly tilting movement, wherein said latch mechanism includes a seat back stop for cooperating with an inertia-responsive member to prevent forward tilting of said seat back when said inertia-responsive member is in its seat back locking position. The inertia-responsive member is adapted for moving into the seat back locking position during a vehicle deceleration. The latch mechanism further includes a device for maintaining said inertia-responsive member in its seat back locking position subsequent to said vehicle deceleration. The seat back latch mechanism may also include a device for releasing said seat back from its locking position subsequent to said vehicle deceleration.
    • 一种用于车辆座椅组件的惯性响应车辆座椅靠背闩锁机构,其具有枢转地支撑用于向前倾斜运动的座椅靠背,其中所述闩锁机构包括座椅靠背挡块,用于与惯性响应构件协作以防止所述座椅靠背向前倾斜 当所述惯性响应构件处于其座椅靠背锁定位置时。 惯性响应构件适于在车辆减速期间移动到座椅靠背锁定位置。 闩锁机构还包括用于在所述车辆减速之后将所述惯性响应构件保持在座椅靠背锁定位置的装置。 座椅靠背闩锁机构还可以包括用于在所述车辆减速之后将所述座椅靠背从其锁定位置释放的装置。
    • 85. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US09076924B2
    • 2015-07-07
    • US13598373
    • 2012-08-29
    • Akira Tanaka
    • Akira Tanaka
    • H01L33/06H01L33/22H01L33/38H01L33/42H01L33/00H01L33/32
    • H01L33/22H01L33/0079H01L33/06H01L33/32H01L33/38H01L33/42H01L2933/0083
    • In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode, a second electrode and a transparent conductive film. The stacked structure includes a first semiconductor layer with a first conductivity type, a light emitting layer and a second semiconductor layer with a second conductivity type which are formed and stacked directly or indirectly. The stacked structure is taken out light from the light emitting layer side to the second semiconductor layer side. The first electrode is connected to the first semiconductor layer. The second electrode is connected to a first principal surface of the second semiconductor layer which is exposed at the light emitting layer side. The second electrode is arranged in parallel with the first electrode. The transparent conductive film is provided so as to cover a second principal surface of the second semiconductor layer.
    • 在一个实施例中,半导体发光器件包括堆叠结构,第一电极,第二电极和透明导电膜。 堆叠结构包括直接或间接形成和堆叠的具有第一导电类型的第一半导体层,发光层和具有第二导电类型的第二半导体层。 从发光层侧向第二半导体层侧取出层叠结构。 第一电极连接到第一半导体层。 第二电极连接到在发光层侧暴露的第二半导体层的第一主表面。 第二电极与第一电极平行布置。 透明导电膜设置成覆盖第二半导体层的第二主表面。
    • 89. 发明授权
    • Light emitting device having different multi-quantum well materials
    • 具有不同多量子阱材料的发光器件
    • US08502265B2
    • 2013-08-06
    • US12561761
    • 2009-09-17
    • Akira Tanaka
    • Akira Tanaka
    • H01L33/00
    • H01L33/145H01L33/08H01L33/305
    • A light emitting device includes: an active layer including a multi-quantum well having a well layer and a barrier layer, the active layer including a non-emitting region and an emitting region formed around the non-emitting region; a first cladding layer provided on a first major surface of the active layer; a pad electrode provided above the first cladding layer so that its center is located near a center of the non-emitting region as viewed in a direction perpendicular to the first major surface; and a second cladding layer provided below a second major surface of the active layer opposite to the first major surface. A bandgap of the well layer in the non-emitting region is wider than a bandgap of the well layer in the emitting region and narrower than a bandgap of the first cladding layer.
    • 发光器件包括:有源层,包括具有阱层和阻挡层的多量子阱,所述有源层包括非发射区和形成在所述非发射区周围的发射区; 设置在所述有源层的第一主表面上的第一覆层; 焊接电极,其设置在所述第一包层上方,使得其中心位于与所述第一主表面垂直的方向上观察的所述非发光区域的中心附近; 以及第二包覆层,设置在与第一主表面相对的有源层的第二主表面的下方。 非发光区域中的阱层的带隙比发光区域中的阱层的带隙宽,并且比第一包层的带隙窄。