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81. 发明授权

US08076165B2 Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method 有权
标题翻译：通过该方法制造p型氮化物半导体和半导体器件的方法
公开(公告)号：US08076165B2
公开(公告)日：2011-12-13
申请号：US11887153
申请日：2006-03-02
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , C23C16/34 , C23C16/4481 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01S5/0425 , H01S5/2009 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.
摘要翻译：本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了这些问题。

82. 发明授权

US07889161B2 Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus 有权
标题翻译：发光装置，用于驱动发光装置的方法以及包括该发光装置的显示装置
公开(公告)号：US07889161B2
公开(公告)日：2011-02-15
申请号：US11644668
申请日：2006-12-22
申请人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： G09G3/32
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
摘要翻译：发光装置包括发光部分，用于发光，光的颜色以驱动电流的值改变;驱动部分，用于驱动发光部分，使得发光部分发出具有所需颜色的光并且通过基于指定期望颜色的信号和指定期望强度的信号产生驱动电流并且通过将驱动电流施加到发光部分来产生期望的强度。

83. 发明授权

US07858992B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07858992B2
公开(公告)日：2010-12-28
申请号：US12366480
申请日：2009-02-05
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L29/04 , H01L29/06
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

84. 发明申请

US20100148120A1 LIGHT-EMITTING APPARATUS, PHOSPHORESCENT PORTION, AND METHOD OF PRODUCING THE SAME 有权
标题翻译：发光装置，荧光体部及其制造方法
公开(公告)号：US20100148120A1
公开(公告)日：2010-06-17
申请号：US12710105
申请日：2010-02-22
申请人： Masaya ISHIDA , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takamoto Sasaki , Yusuke Mori
发明人： Masaya ISHIDA , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takamoto Sasaki , Yusuke Mori
IPC分类号： C09K11/62 , C09K11/64
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III-V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.
摘要翻译：由发出一次光的光源和吸收初级光并发出二次光的荧光体构成的发光装置，能够提供高亮度，低功耗，长寿命，同时最小化对环境的不利影响。荧光体由体积为2 800nm 3以下的微细晶体形式的III-V族半导体形成。从微粒子晶体发出的光取决于其体积，因此赋予细粒子晶体预定的体积分布，可以调节二次光的波长范围。

85. 发明授权

US07734182B2 Illuminator including optical transmission mechanism 有权
标题翻译：照明器包括光传输机构
公开(公告)号：US07734182B2
公开(公告)日：2010-06-08
申请号：US12118372
申请日：2008-05-09
申请人： Tatsuya Morioka , Mototaka Taneya
发明人： Tatsuya Morioka , Mototaka Taneya
IPC分类号： H04B10/00
CPC分类号： H04B10/1141 , H04B10/116
摘要： An illuminator including an optical transmission mechanism includes a transmission-side electric circuit for forming electric signals modulated in response to information, a light source for emitting intensity-modulated light in response to the electric modulated signals, optical wavelength conversion means including fluorescent material for converting part of the intensity-modulated light into illumination light, photoelectric conversion means for receiving another part of the modulated light and converting this part into reproduced electric modulated signals and a receiving-side electric circuit for reproducing the information from the reproduced electric modulated signals.
摘要翻译：包括光传输机构的照明装置包括用于响应于信息而形成电信号的发送侧电路，响应于电调制信号发射强度调制光的光源，包括用于转换的荧光材料的光波长转换装置将强度调制光的一部分转换成照明光;光电转换装置，用于接收调制光的另一部分并将该部分转换成再生的电调制信号;以及接收侧电路，用于从再现的电调制信号再现信息。

86. 发明申请

US20090121320A1 Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method 有权
标题翻译：通过该方法制造p型氮化物半导体和半导体器件的方法
公开(公告)号：US20090121320A1
公开(公告)日：2009-05-14
申请号：US11887153
申请日：2006-03-02
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
IPC分类号： H01L29/12 , H01L21/365
CPC分类号： H01S5/22 , B82Y20/00 , C23C16/34 , C23C16/4481 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01S5/0425 , H01S5/2009 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.
摘要翻译：本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了这些问题。

87. 发明授权

US07421000B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07421000B2
公开(公告)日：2008-09-02
申请号：US11704348
申请日：2007-02-09
申请人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
发明人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
IPC分类号： H01S5/00
CPC分类号： H01S5/20
摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2
摘要翻译：一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上，折射率n}

88. 发明申请

US20070153854A1 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US20070153854A1
公开(公告)日：2007-07-05
申请号：US11704348
申请日：2007-02-09
申请人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
发明人： Mototaka Taneya , Yukio Yamasaki , Shigetoshi Ito
IPC分类号： H01S5/00
CPC分类号： H01S5/20
摘要： A semiconductor laser device having a waveguide constructed in a stack of layers including, on a substrate that is transparent and has a refractive index ns for laser light, a first clad layer of a refractive index nc1, a second clad layer of a refractive index nc2, a third clad layer of a refractive index nc3, a first conductivity type guide layer of a refractive index ng, an active quantum well layer, a second conductivity type guide layer, a second conductivity type clad layer, and a second conductivity type contact layer deposited in that order, wherein the waveguide has an effective refractive index ne, and the relationship nc2
摘要翻译：一种半导体激光器件，其具有以堆叠层构成的波导，所述波导包括在透明且具有用于激光的折射率n _{的衬底上，折射率n}

89. 发明授权

US07180487B2 Light emitting apparatus, method for driving the light emitting apparatus, and display apparatus including the light emitting apparatus 有权
标题翻译：发光装置，用于驱动发光装置的方法以及包括该发光装置的显示装置
公开(公告)号：US07180487B2
公开(公告)日：2007-02-20
申请号：US10631932
申请日：2003-07-30
申请人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
发明人： Takeshi Kamikawa , Shigetoshi Ito , Mototaka Taneya
IPC分类号： G09G3/32
CPC分类号： H05B33/0866 , G09G3/14 , G09G3/2014 , G09G3/2081 , G09G3/32 , G09G2310/0272 , G09G2320/0626 , G09G2320/0666 , G09G2330/021 , H01L2224/48091 , H01L2224/49107 , H05B33/0818 , H05B33/0821 , H05B33/086 , H01L2924/00014
摘要： A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.
摘要翻译：发光装置包括发光部分，用于发光，光的颜色以驱动电流的值改变;驱动部分，用于驱动发光部分，使得发光部分发出具有所需颜色的光并且通过基于指定期望颜色的信号和指定期望强度的信号产生驱动电流并且通过将驱动电流施加到发光部分来产生期望的强度。

90. 发明授权

US07123642B2 Multi-wavelength laser device 有权
标题翻译：多波长激光装置
公开(公告)号：US07123642B2
公开(公告)日：2006-10-17
申请号：US10789848
申请日：2004-02-27
申请人： Toshiyuki Kawakami , Mototaka Taneya
发明人： Toshiyuki Kawakami , Mototaka Taneya
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L2224/48463 , H01L2924/3025 , H01S5/02212 , H01S5/02252 , H01S5/02272 , H01S5/2231 , H01S5/3432 , H01S5/34326 , H01S5/34333 , H01S5/4031 , H01S5/4087 , H01S2304/04 , H01L2924/00
摘要： A multi-wavelength laser device includes at least two of a blue laser diode, a red laser diode, and an infrared laser diode, which are arranged in the same direction on the same base. One laser light emission point is arranged behind another in increasing order of wavelengths of the laser diodes.
摘要翻译：多波长激光器件包括蓝色激光二极管，红色激光二极管和红外激光二极管中的至少两个，它们在同一基底上沿相同的方向布置。一个激光发射点以激光二极管的波长递增的次序布置在另一个之后。

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