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81. 发明授权

US4377629A Layered charge carrier member and method of forming image using same 失效
标题翻译：层状电荷载体和使用其形成图像的方法
公开(公告)号：US4377629A
公开(公告)日：1983-03-22
申请号：US244338
申请日：1981-03-17
申请人： Noriyoshi Tarumi , Kiyoshi Kimura , Haruo Iwahashi
发明人： Noriyoshi Tarumi , Kiyoshi Kimura , Haruo Iwahashi
IPC分类号： G03G9/10 , G03G5/02 , G03G5/05 , G03G5/10 , G03G5/14 , G03G9/087 , G03G15/05 , G03G15/16 , G03G15/20 , G03G21/06 , G03G21/10 , G03G5/08
CPC分类号： G03G5/0571 , G03G5/0202 , G03G5/0211 , G03G5/0217 , G03G5/0539 , G03G5/0582 , G03G5/0596 , G03G5/10 , G03G5/142 , G03G5/144 , Y10S430/105
摘要： A charge carrier member comprising an intermediate layer composed of a heat-resistant resin containing electrically conductive material, a charge carrier layer composed of a heat-resistant resin, and a support member. The support member is an electrically conductive support member or consists of an electrically conductive member which is provided on an insulating member. A method of forming a copy image which comprises a step for forming an electrostatic latent image on the charge carrier member, a step for converting the electrostatic latent image into a toner image using a developing agent, and a step for transferring the toner image onto a transfer medium.
摘要翻译：一种电荷载体构件，包括由含有导电材料的耐热树脂构成的中间层，由耐热树脂构成的电荷载体层和支撑构件。支撑构件是导电支撑构件或由设置在绝缘构件上的导电构件构成。一种形成复印图像的方法，包括用于在电荷载体构件上形成静电潜像的步骤，使用显影剂将静电潜像转换成调色剂图像的步骤，以及将调色剂图像转印到转移介质。

82. 发明授权

US4086873A Electrophotographic developing device incorporating a developing electrode having an insulation layer on its surface 失效
标题翻译：包括其表面上具有绝缘层的显影电极的电子照相显影装置
公开(公告)号：US4086873A
公开(公告)日：1978-05-02
申请号：US768279
申请日：1977-02-14
申请人： Sizuo Morita , Hiroshi Thuchiya , Kiyoshi Kimura
发明人： Sizuo Morita , Hiroshi Thuchiya , Kiyoshi Kimura
IPC分类号： G03G15/08 , G03G15/09
CPC分类号： G03G15/0801 , G03G15/0907
摘要： This application discloses an electrophotographic developing device having an electrode located at the developing station oppositely to an electrostatic latent image bearing body wherein said electrostatic latent image is developed with a developer that consists of an electrically conductive carrier and toner. Development occurs while applying a bias voltage between said body and said electrode which has an insulation layer on its surface.
摘要翻译：本申请公开了一种电子照相显影装置，其具有位于与静电潜像承载体相对的显影站处的电极，其中所述静电潜像用由导电载体和调色剂组成的显影剂显影。在所述主体和所述电极之间施加偏置电压时，发生显影，所述电极在其表面上具有绝缘层。

83. 外观设计

USD921052S1 Gas filling apparatus 有权
公开(公告)号：USD921052S1
公开(公告)日：2021-06-01
申请号：US29706126
申请日：2019-09-18
申请人： Takeshi Ozeki , Kiyoshi Kimura
设计人： Takeshi Ozeki , Kiyoshi Kimura

84. 发明授权

US08610210B2 Power semiconductor device and method for manufacturing same 失效
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US08610210B2
公开(公告)日：2013-12-17
申请号：US12840201
申请日：2010-07-20
申请人： Hiroshi Ohta , Yasuto Sumi , Kiyoshi Kimura , Wataru Sekine , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
发明人： Hiroshi Ohta , Yasuto Sumi , Kiyoshi Kimura , Wataru Sekine , Wataru Saito , Syotaro Ono , Munehisa Yabuzaki , Nana Hatano , Miho Watanabe
IPC分类号： H01L29/66
CPC分类号： H01L29/66712 , H01L29/0619 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/7811
摘要： According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.
摘要翻译：根据一个实施例，功率半导体器件包括第一半导体层以及第一，第二和第三半导体区域。第一半导体层具有第一导电类型。第一半导体区域具有第二导电类型，并且在第一导电类型的第二半导体层中在横向方向上形成周期性。第二半导体层设置在器件部分的第一半导体层的主表面上，其主电流通道形成在大体上垂直于主表面的垂直方向上，以及设置在器件部分周围的端子部分中。第二半导体区域具有第一导电类型，并且是夹在相邻的第一半导体区域中的第二半导体层的一部分。第三半导体区域具有第二导电类型并且设置在端子部分中的第一半导体区域的下方。

85. 发明授权

US08421396B2 Motor controlling device 有权
标题翻译：电机控制装置
公开(公告)号：US08421396B2
公开(公告)日：2013-04-16
申请号：US12987299
申请日：2011-01-10
申请人： Jun Yamada , Shigeru Kamio , Kiyoshi Kimura
发明人： Jun Yamada , Shigeru Kamio , Kiyoshi Kimura
IPC分类号： H02P25/00 , H02P25/08
CPC分类号： G05B7/02
摘要： A motor controlling device includes an encoder to output pulse signals with a predetermined angle interval as a rotor of a motor is rotated. An energized phase of the motor is sequentially switched by detecting a rotation position of the rotor based on a value of counting the signals. An initial drive controlling portion executes an initial drive to switch the energized phase with a predetermined pattern after the device is activated so as to learn a relationship among the count value, the rotation position and the energized phase. An initial drive prohibiting portion prohibits the execution of the initial drive until a predetermined time is elapsed after the initial drive is finished.
摘要翻译：电动机控制装置包括编码器，当电动机的转子旋转时，输出具有预定角度间隔的脉冲信号。基于对信号进行计数的值，通过检测转子的旋转位置来依次切换电动机的通电相位。初始驱动控制部分在器件启动之后执行初始驱动以切换具有预定图案的通电相位，以便学习计数值，旋转位置和通电相位之间的关系。初始驱动禁止部分禁止执行初始驱动，直到在初始驱动完成之后经过预定时间。

86. 发明授权

US08197832B2 Methods and compositions for inhibiting mycotoxin contamination in cereals 有权
标题翻译：用于抑制谷物中霉菌毒素污染的方法和组合物
公开(公告)号：US08197832B2
公开(公告)日：2012-06-12
申请号：US10537117
申请日：2003-12-04
申请人： Daisuke Awakura , Kiyoshi Kimura , Kazuyoshi Masuda
发明人： Daisuke Awakura , Kiyoshi Kimura , Kazuyoshi Masuda
IPC分类号： A01N25/00 , A23L3/34
CPC分类号： A01N33/12 , A01N33/04 , A01N59/06 , A01N59/08 , A01N59/26
摘要： We search for a cultivation method for reducing the amount of mycotoxin contamination in wheat which has been an important pending question for the quality in actual producing field of wheat and the health hazard risk for customers.The present invention discloses a method of reducing the contamination amount of mycotoxin in cereals characterized in that one or more compounds A selected from the group consisting of ammonium salts, primary to quaternary ammonium salts, alkali metal salts, alkaline earth metal salts and polyvalent metal salts of phosphorous acid and phosphite ester are given to the cereals.
摘要翻译：我们寻求减少小麦真菌毒素污染量的培养方法，这是小麦实际生产领域质量的重要问题，也是客户的健康危害风险。本发明公开了一种减少谷物中霉菌毒素的污染量的方法，其特征在于，一种或多种选自铵盐，伯 - 季铵盐，碱金属盐，碱土金属盐和多价金属盐的化合物A 的磷酸和亚磷酸酯被给予谷物。

87. 发明申请

US20120123653A1 SHIFT-BY-WIRE SYSTEM 有权
标题翻译：移动式绕线系统
公开(公告)号：US20120123653A1
公开(公告)日：2012-05-17
申请号：US13296476
申请日：2011-11-15
申请人： Kiyoshi Kimura , Masaaki Shinojima , Jun Yamada
发明人： Kiyoshi Kimura , Masaaki Shinojima , Jun Yamada
IPC分类号： B60W10/06 , B60W10/10 , F16H61/02
CPC分类号： B60W10/06 , B60W10/10 , F16H59/105 , F16H61/02 , F16H61/28 , F16H61/32 , F16H63/38 , F16H2061/0087 , F16H2061/283 , F16H2061/326
摘要： When a vehicle electric power source is turned on, and when a target mode position is other than a P-mode position and a D-mode position or the target mode position is unfixed, an SBW-ECU does not drive the actuator so that the current actual mode position is maintained. The SBW-ECU accepts only the driver's requirement for changing the mode position to the P-mode position or the D-mode position. When it is required to change the mode position to the P-mode position, a first position learning portion learns a first reference position. When it is required to change the mode position to the D-mode position, a second position learning portion learns a second reference position.
摘要翻译：当车辆电源接通时，并且当目标模式位置不是P模式位置和D模式位置或目标模式位置不固定时，SBW-ECU不驱动致动器，使得保持当前实际模式位置。 SBW-ECU仅接受驾驶员将模式位置更改为P模式位置或D模式位置的要求。当需要将模式位置改变为P模式位置时，第一位置学习部分学习第一参考位置。当需要将模式位置改变为D模式位置时，第二位置学习部分学习第二参考位置。

88. 发明申请

US20110291181A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110291181A1
公开(公告)日：2011-12-01
申请号：US13149345
申请日：2011-05-31
申请人： Hiroyuki IRIFUNE , Yasuto Sumi , Kiyoshi Kimura , Hiroshi Ohta
发明人： Hiroyuki IRIFUNE , Yasuto Sumi , Kiyoshi Kimura , Hiroshi Ohta
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66712 , H01L29/0626 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/404 , H01L29/7397 , H01L29/7811 , H01L29/7813
摘要： According to one embodiment, a semiconductor device including a cell region and a terminal region includes a first semiconductor region of a first conductivity type, semiconductor pillars of the first and a second conductivity type, a second semiconductor region of the second conductivity type, and a third semiconductor region of the first conductivity type. The semiconductor pillars of the first and second conductivity type are and arranged alternately on the first semiconductor region. The second semiconductor region is provided on the semiconductor pillar of the second conductivity type. The third semiconductor region is provided on the second semiconductor region. A semiconductor pillar other than a semiconductor pillar most proximal to the terminal region is provided in a stripe configuration. The semiconductor pillar most proximal to the terminal region includes regions having a high and a low impurity concentration. The regions are provided alternately.
摘要翻译：根据一个实施例，包括单元区域和端子区域的半导体器件包括第一导电类型的第一半导体区域，第一和第二导电类型的半导体柱，第二导电类型的第二半导体区域和第一导电类型的第三半导体区域。第一和第二导电类型的半导体柱交替地布置在第一半导体区域上。第二半导体区域设置在第二导电类型的半导体柱上。第三半导体区域设置在第二半导体区域上。最靠近端子区域的半导体柱以外的半导体柱设置成条状。最靠近末端区域的半导体柱包括具有高和低杂质浓度的区域。这些区域交替地设置。

89. 发明授权

US07966903B2 Shift range control apparatus 有权
标题翻译：换档范围控制装置
公开(公告)号：US07966903B2
公开(公告)日：2011-06-28
申请号：US12120321
申请日：2008-05-14
申请人： Kiyoshi Kimura , Taku Itoh , Shigeru Yoshiyama
发明人： Kiyoshi Kimura , Taku Itoh , Shigeru Yoshiyama
IPC分类号： F16H3/38 , F16H59/00 , F16H61/00 , F16H63/00 , B60K20/00 , B60K17/04 , B60K17/12 , B62K25/00 , B62K25/02
CPC分类号： F16H63/483 , F16H61/12 , F16H63/3433 , F16H63/3458 , F16H63/3491 , F16H2061/326 , Y10T74/19251 , Y10T74/19284 , Y10T74/2003 , Y10T74/20037 , Y10T74/20043 , Y10T74/20049 , Y10T74/20085 , Y10T74/20116
摘要： A rod-lock mechanism is provided in an automatic transmission for a vehicle. The rod-lock mechanism has an engaging pin which will be engaged with a rod when the rod is in its initial position, so as to hold the rod in its initial position. The rod-lock mechanism further has an electric actuator for driving the engaging pin when electric power is supplied, so that the engaging pin is brought out of engagement from the rod. A forced parking current supply unit controls electric power supply to the electric actuator. When the electric power is supplied to the electric actuator, the rod is moved in a direction of a parking position to bring a vehicle into a parking condition.
摘要翻译：在车辆的自动变速器中设置有杆锁机构。杆锁定机构具有接合销，当杆处于其初始位置时，该接合销将与杆接合，以将杆保持在其初始位置。杆锁定机构还具有用于在供电时驱动接合销的电致动器，使得接合销从杆脱离接合。强制停车电流供应单元控制电动执行机构的电力供应。当向电动执行机构供给电力时，杆在停车位置的方向上移动，使车辆处于停车状态。

90. 发明授权

US07948145B2 Switched reluctance motor 有权
标题翻译：开关磁阻电机
公开(公告)号：US07948145B2
公开(公告)日：2011-05-24
申请号：US12343575
申请日：2008-12-24
申请人： Seiji Nakayama , Taku Itoh , Kiyoshi Kimura
发明人： Seiji Nakayama , Taku Itoh , Kiyoshi Kimura
IPC分类号： H02K19/10 , H02K1/14 , H02K1/24
CPC分类号： H02K37/04
摘要： A plurality of concavities and convexities is provided on tips of all rotor teeth 24 of the SR motor 5. Depths of the concave portions α are deep on an edge side where a stator tooth 23 and rotor tooth 24 first approach and are shallow as a facing area between the stator tooth 23 and rotor tooth 24 increases. Therefore, magnetic resistance between the stator tooth 23 and rotor tooth 24 becomes high at an early stage of the stator tooth 23 and rotor tooth 24 facing each other and becomes low as the facing area between the stator tooth 23 and rotor tooth 24 increases. As a result, torque fluctuation can be suppressed at a time of a large current and a minimum generation torque can be increased at a time of a small current.
摘要翻译：在SR马达5的所有转子齿24的尖端上设置多个凹凸。凹部α的深度在定子齿23和转子齿24首先进入并且浅的面的边缘侧是深的定子齿23与转子齿24之间的区域增加。因此，定子齿23和转子齿24之间的磁阻在定子齿23和转子齿24彼此面对的早期变高，随着定子齿23和转子齿24之间的相对面积的增加而变低。结果，可以在大电流时抑制转矩波动，并且可以在小电流时增加最小的发电转矩。

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