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    • 81. 发明授权
    • Ultimate SIMOX
    • 终极SIMOX
    • US06717217B2
    • 2004-04-06
    • US10341819
    • 2003-01-14
    • Keith E. FogelMaurice H. NorcottDevendra K. Sadana
    • Keith E. FogelMaurice H. NorcottDevendra K. Sadana
    • H01L2176
    • H01L21/76243
    • A method of forming a silicon-on-insulator (SOI) substrate having a buried oxide region that has a greater content of thermally grown oxide as compared to oxide formed by implanted oxygen ions is provided. Specifically, the inventive SOI substrate is formed by utilizing a method wherein oxygen ions are implanted into a surface of a Si-containing substrate that includes a sufficient Si thickness to allow for subsequent formation of a buried oxide region in the Si-containing substrate which has a greater content of thermally grown oxide as compared to oxide formed by the implanted oxygen ions followed by an annealing step. The sufficient Si thickness can be obtained by (i) forming a Si layer on the surface of the implanted substrate prior to annealing; (ii) conducting a high-energy, high-dose oxygen implant to ensure that the oxygen ions are implanted a sufficient distance from the surface of the Si-containing substrate; or (iii) conducting a high-energy, low-dose oxygen implant so that less implanted oxide is present in the Si-containing substrate.
    • 提供了一种形成具有与由植入的氧离子形成的氧化物相比具有更大含量的热生长氧化物的掩埋氧化物区域的绝缘体上硅(SOI)衬底的方法。 具体地说,本发明的SOI衬底是通过利用其中将氧离子注入包含足够的Si厚度的含Si衬底的表面中以允许随后在含Si衬底中形成掩埋氧化物区域的方法形成的, 与由注入的氧离子形成的氧化物相比,随后进行退火步骤,热生长氧化物的含量更高。 可以通过(i)在退火之前在注入的衬底的表面上形成Si层来获得足够的Si厚度; (ii)进行高能量高剂量氧注入,以确保从含Si衬底表面注入足够距离的氧离子; 或(iii)进行高能量,低剂量的氧注入,使得在含Si衬底中存在少量注入的氧化物。
    • 89. 发明申请
    • METHOD FOR CONTROLLED LAYER TRANSFER
    • 控制层转移方法
    • US20120322227A1
    • 2012-12-20
    • US13159893
    • 2011-06-14
    • Stephen W. BedellKeith E. FogelPaul A. LauroDevendra K. Sadana
    • Stephen W. BedellKeith E. FogelPaul A. LauroDevendra K. Sadana
    • H01L21/30
    • H01L21/304H01L31/1896Y02E10/50Y02P80/30
    • A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.
    • 提供了一种受控层转移的方法。 该方法包括向基底基底提供应力层。 应力层具有位于基底基板的上表面顶部的应力层,以及位于基底基板的每个侧壁边缘附近的自锁紧应力层。 然后将剥落抑制剂施加在基底衬底的应力层部分的顶部,然后将应力层的自锁定应力层部分与应力层部分分离。 位于应力层部分之下的基底部分的一部分然后从原始基底剥离。 剥落包括从应力层部分顶部置换剥落抑制剂。 剥落后,从基底基板的剥离部的顶部除去应力层。