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81. 发明申请

US20060245734A1 Reproducing device and reproducing method 有权
标题翻译：再现装置和再现方法
公开(公告)号：US20060245734A1
公开(公告)日：2006-11-02
申请号：US11407050
申请日：2006-04-20
申请人： Hiroshi Amano , Masahiro Nobori , Shoji Shirakawa
发明人： Hiroshi Amano , Masahiro Nobori , Shoji Shirakawa
IPC分类号： H04N7/00
CPC分类号： H04N5/765 , H04N5/775 , H04N5/781 , H04N5/85 , H04N9/8205
摘要： The present invention allows a reproducing device that can be used in various device environmental conditions to execute adequate output operation according to a device environmental condition. When reproducing a content signal of audio and video, a reproducing device determines a device environmental condition as the coupling state of the reproducing device and surroundings of the reproducing device. Subsequently, the reproducing device implements control according to output part information and control information that are set with being associated with the device environmental condition. Based on the output part information, either or both of a main-body output unit and an external output unit are controlled as a part for outputting audio or video. In addition, control corresponding to the registered control information is executed inside the device, or details of the control are indicated to a coupled external device.
摘要翻译：本发明允许可以在各种设备环境条件下使用的再现装置根据设备环境条件执行足够的输出操作。当再现音频和视频的内容信号时，再现装置将设备环境条件确定为再现设备的耦合状态和再现设备的周围环境。随后，再现装置根据与设备环境条件相关联的设置的输出部分信息和控制信息实现控制。基于输出部分信息，将主体输出单元和外部输出单元中的一个或两个作为输出音频或视频的一部分进行控制。此外，在设备内部执行对应于登记的控制信息的控制，或者将控制的细节指示给耦合的外部设备。

82. 发明申请

US20060122742A1 Onboard apparatus, navigation system, and method for setting display screen 有权
公开(公告)号：US20060122742A1
公开(公告)日：2006-06-08
申请号：US11213514
申请日：2005-08-26
申请人： Shinichi Hasegawa , Takumi Arie , Hiroshi Amano
发明人： Shinichi Hasegawa , Takumi Arie , Hiroshi Amano
IPC分类号： G05D1/00
CPC分类号： G08G1/0962 , B60W2050/146 , B60W2550/402 , G01C21/26 , G01C21/3697 , G05D1/0274 , G05D1/0278 , G05D2201/0213
摘要： To use the same onboard apparatus and navigation system in many kinds of vehicles. A table in which manufacturers and vehicle types are connected with designs and functions has been previously stored in a navigation system module 21. The navigation system module 21 itself sends the center controller 11 a query about vehicle information (the country that manufactured, manufacturer, vehicle type, using country, manufacturing number), recognizes the vehicle information supplied from the center controller 11, and automatically sets the screen design, function, etc., suitable to the vehicle on which the onboard apparatus is mounted.

83. 发明申请

US20060004517A1 Onboard apparatus, navigation system, and method for setting display screen 有权
标题翻译：车载设备，导航系统和设置显示屏的方法
公开(公告)号：US20060004517A1
公开(公告)日：2006-01-05
申请号：US11212298
申请日：2005-08-26
申请人： Shinichi Hasegawa , Takumi Arie , Hiroshi Amano
发明人： Shinichi Hasegawa , Takumi Arie , Hiroshi Amano
IPC分类号： G01C21/34
CPC分类号： G08G1/0962 , B60W2050/146 , B60W2550/402 , G01C21/26 , G01C21/3697 , G05D1/0274 , G05D1/0278 , G05D2201/0213
摘要： To use the same onboard apparatus and navigation system in many kinds of vehicles. A table in which manufacturers and vehicle types are connected with designs and functions has been previously stored in a navigation system module 21. The navigation system module 21 itself sends the center controller 11 a query about vehicle information (the country that manufactured, manufacturer, vehicle type, using country, manufacturing number), recognizes the vehicle information supplied from the center controller 11, and automatically sets the screen design, function, etc., suitable to the vehicle on which the onboard apparatus is mounted.
摘要翻译：在多种车辆中使用相同的机载设备和导航系统。制造商和车辆类型与设计和功能相连接的表已经先前存储在导航系统模块21中。导航系统模块21本身向中心控制器11发送关于车辆信息（制造的国家，制造商，车辆类型，使用国家，制造号码）的查询，识别从中央控制器11提供的车辆信息，并且自动设置屏幕设计，功能等，适用于安装车载设备的车辆。

84. 发明授权

US06967359B2 Nitride semiconductor substrate production method thereof and semiconductor optical device using the same 有权
标题翻译：氮化物半导体衬底的制造方法和使用其的半导体光学器件
公开(公告)号：US06967359B2
公开(公告)日：2005-11-22
申请号：US10488753
申请日：2002-09-09
申请人： Satoshi Kamiyama , Hiroshi Amano
发明人： Satoshi Kamiyama , Hiroshi Amano
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L31/0304 , H01L31/108 , H01L33/06 , H01L33/32 , H01L33/34 , H01L31/0328
CPC分类号： H01L33/24 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02636 , H01L21/02658 , H01L31/03046 , H01L31/108 , H01L33/32 , Y02E10/544 , Y02P70/521
摘要： Disclosed are a nitride semiconductor substrate and a production method thereof. Seed crystals made of GaN or AlGaN with a relatively low AlN molar fraction is selectively grown on a first group-III nitride semiconductor, such as GaN, to have a specific crystal face. Then, on the seed crystals, an AlGaN with a high AlN molar fraction is grown through a second group-III nitride semiconductor, such as AlN deposited at a low temperature. The present invention can provide an AlGaN-crystal substrate having a low dislocation density in a wide area without any crack, and a high-performance short-wavelength optical device using the substrate.
摘要翻译：公开了氮化物半导体衬底及其制造方法。由具有相对较低的AlN摩尔分数的GaN或AlGaN制成的晶种在诸如GaN的第一III族氮化物半导体上有选择地生长以具有特定的晶面。然后，在晶种上，通过第二III族氮化物半导体，例如在低温下沉积的AlN，生长具有高AlN摩尔分数的AlGaN。本发明可以提供在宽范围内没有任何裂纹的位错密度低的AlGaN晶体衬底，以及使用该衬底的高性能短波长光学器件。

85. 发明申请

US20050037526A1 Nitride semiconductor substrate production method thereof and semiconductor optical device using the same 有权
标题翻译：氮化物半导体衬底的制造方法和使用其的半导体光学器件
公开(公告)号：US20050037526A1
公开(公告)日：2005-02-17
申请号：US10488753
申请日：2002-09-09
申请人： Satoshi Kamiyama , Hiroshi Amano
发明人： Satoshi Kamiyama , Hiroshi Amano
IPC分类号： C30B25/02 , C30B25/18 , C30B29/40 , H01L21/20 , H01L21/205 , H01L31/0304 , H01L31/108 , H01L33/06 , H01L33/32 , H01L33/34 , H01L21/00 , H01L33/00
CPC分类号： H01L33/24 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02636 , H01L21/02658 , H01L31/03046 , H01L31/108 , H01L33/32 , Y02E10/544 , Y02P70/521
摘要： Disclosed are a nitride semiconductor substrate and a production method thereof. Seed crystals made of GaN or AlGaN with a relatively low AIN molar fraction is selectively grown on a first group-III nitride semiconductor, such as GaN, to have a specific crystal face. Then, on the seed crystals, an AlGaN with a high AIN molar fraction is grown through a second group-III nitride semiconductor, such as AIN deposited at a low temperature. The present invention can provide an AlGaN-crystal substrate having a low dislocation density in a wide area without any crack, and a high-performance short-wavelength optical device using the substrate.
摘要翻译：公开了氮化物半导体衬底及其制造方法。在具有相对低的AIN摩尔分数的GaN或AlGaN制成的晶种选择性地生长在诸如GaN的第一III族氮化物半导体上以具有特定的晶面。然后，在晶种上，通过第二组III族氮化物半导体（例如在低温下沉积的AlN）生长具有高AIN摩尔分数的AlGaN。本发明可以提供在宽范围内没有任何裂纹的位错密度低的AlGaN晶体衬底，以及使用该衬底的高性能短波长光学器件。

86. 发明授权

US06849472B2 Nitride semiconductor device with reduced polarization fields 有权
标题翻译：具有减小的偏振场的氮化物半导体器件
公开(公告)号：US06849472B2
公开(公告)日：2005-02-01
申请号：US09992192
申请日：2001-11-13
申请人： Michael R. Krames , Tetsuya Takeuchi , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
发明人： Michael R. Krames , Tetsuya Takeuchi , Norihide Yamada , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L21/20 , H01L21/205 , H01L31/18 , H01L33/00 , H01L33/06 , H01L33/16 , H01L33/18 , H01L33/24 , H01L33/32 , H01S5/02 , H01S5/32 , H01S5/343 , H01L21/00
CPC分类号： H01L33/16 , B82Y20/00 , H01L21/0237 , H01L21/02378 , H01L21/02389 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/02609 , H01L31/1844 , H01L31/1852 , H01L33/0062 , H01L33/06 , H01L33/18 , H01L33/24 , H01L33/32 , H01S5/021 , H01S5/0213 , H01S5/3201 , H01S5/3202 , H01S5/343 , H01S5/34333 , Y02E10/544
摘要： A method for fabricating a light-emitting semiconductor device including a III-Nitride quantum well layer includes selecting a facet orientation of the quantum well layer to control a field strength of a piezoelectric field and/or a field strength of a spontaneous electric field in the quantum well layer, and growing the quantum well layer with the selected facet orientation. The facet orientation may be selected to reduce the magnitude of a piezoelectric field and/or the magnitude of a spontaneous electric field, for example. The facet orientation may also be selected to control or reduce the magnitude of the combined piezoelectric and spontaneous electric field strength.
摘要翻译：一种制造包括III-氮化物量子阱层的发光半导体器件的方法包括选择量子阱层的面取向以控制压电场的场强和/或自发电场的场强量子阱层，并用选定的面取向生长量子阱层。例如，可以选择小面取向以减小压电场的大小和/或自发电场的大小。也可以选择面取向以控制或减小组合的压电和自发电场强度的大小。

87. 发明申请

US20050006635A1 Semiconductor apparatus, method for growing nitride semiconductor and method for producing semiconductor apparatus 审中-公开
标题翻译：半导体装置，氮化物半导体的生长方法及半导体装置的制造方法
公开(公告)号：US20050006635A1
公开(公告)日：2005-01-13
申请号：US10810309
申请日：2004-03-26
申请人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
发明人： Isamu Akasaki , Hiroshi Amano , Satoshi Kamiyama , Takanori Yasuda , Toshiya Matsuda
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20 , H01L21/22 , H01L33/00 , H01L29/06
CPC分类号： C30B25/02 , C30B25/183 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L21/2205 , H01L33/007
摘要： A semiconductor apparatus includes a substrate made of a diboride single crystal expressed by a chemical formula XB2, in which X includes at least one of Tl, Zr, Nb and Hf, a semiconductor buffer layer formed on a principal surface of the substrate and made of AlyGa1-yN (0
摘要翻译：半导体装置包括由化学式XB2表示的二硼化物单晶构成的基板，其中X包括Tl，Zr，Nb和Hf中的至少一个，半导体缓冲层形成在基板的主表面上并由 AlyGa1-yN（0

88. 发明授权

US06829273B2 Nitride semiconductor layer structure and a nitride semiconductor laser incorporating a portion of same 失效
标题翻译：氮化物半导体层结构和包含其一部分的氮化物半导体激光器
公开(公告)号：US06829273B2
公开(公告)日：2004-12-07
申请号：US10040328
申请日：2001-12-19
申请人： Hiroshi Amano , Isamu Akasaki , Yawara Kaneko , Norihide Yamada , Tetsuya Takeuchi , Satoshi Watanabe
发明人： Hiroshi Amano , Isamu Akasaki , Yawara Kaneko , Norihide Yamada , Tetsuya Takeuchi , Satoshi Watanabe
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/3215 , H01S5/32341 , H01S5/34333 , H01S2301/173
摘要： The nitride semiconductor layer structure comprises a buffer layer and a composite layer on the buffer layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AlN. The composite layer is a layer of a single-crystal nitride semiconductor material that includes AlN. The composite layer includes a first sub-layer adjacent the buffer layer and a second sub-layer over the first sub-layer. The single-crystal nitride semiconductor material of the composite layer has a first AlN molar fraction in the first sub-layer and has a second AlN molar fraction in the second sub-layer. The second AlN molar fraction is greater than the first AlN molar fraction. The nitride semiconductor laser comprises a portion of the above-described nitride semiconductor layer structure, and additionally comprises an optical waveguide layer over the composite layer and an active layer over the optical waveguide layer.
摘要翻译：氮化物半导体层结构包括缓冲层和缓冲层上的复合层。缓冲层是包含AlN的低温沉积氮化物半导体材料的层。复合层是包含AlN的单晶氮化物半导体材料层。复合层包括邻近缓冲层的第一子层和第一子层上的第二子层。复合层的单晶氮化物半导体材料在第一子层中具有第一AlN摩尔分数，并且在第二子层中具有第二AlN摩尔分数。第二AlN摩尔分数大于第一AlN摩尔分数。氮化物半导体激光器包括上述氮化物半导体层结构的一部分，并且还包括复合层上的光波导层和光波导层上的有源层。

89. 发明授权

US06537513B1 Semiconductor substrate and method for making the same 有权
标题翻译：半导体衬底及其制造方法
公开(公告)号：US06537513B1
公开(公告)日：2003-03-25
申请号：US09562978
申请日：2000-04-27
申请人： Hiroshi Amano , Tetsuya Takeuchi , Isamu Akasaki
发明人： Hiroshi Amano , Tetsuya Takeuchi , Isamu Akasaki
IPC分类号： C01B3326
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02458 , H01L21/02502 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L29/205
摘要： A substrate for fabricating semiconductor devices based on Group III semiconductors and the method for making the same. A substrate according to the present invention includes a base substrate, a first buffer layer, and a first single crystal layer. The first buffer layer includes a Group III material deposited on the base substrate at a temperature below that at which the Group III material crystallizes. The Group III material is crystallized by heating the buffer layer to a temperature above that at which the Group III material crystallizes to form a single crystal after the Group III material has been deposited. The first single crystal layer includes a Group III-V semiconducting material deposited on the first buffer layer at a temperature above that at which the Group III semiconducting material crystallizes. In one embodiment of the present invention, a second buffer layer and a second single crystal layer are deposited on the first single crystal layer. The second buffer layer includes a Group III material deposited on the first single crystal layer at a temperature below that at which the Group III material crystallizes. The Group III material is then crystallized by heating the buffer layer to a temperature above that at which the Group III material crystallizes to form a single crystal. The second single crystal layer includes a Group III-V semiconducting material deposited on the second buffer layer at a temperature above that at which the Group III semiconducting material crystallizes.
摘要翻译：一种用于制造基于III族半导体的半导体器件的衬底及其制造方法。根据本发明的基板包括基底，第一缓冲层和第一单晶层。第一缓冲层包括在低于III族材料结晶温度的温度下沉积在基底基材上的III族材料。第III组材料通过将缓冲层加热至高于第III族材料结晶后形成单晶的温度而结晶，此后III族材料已沉积。第一单晶层包括在高于III族半导体材料结晶温度的温度下沉积在第一缓冲层上的III-V族半导体材料。在本发明的一个实施例中，在第一单晶层上沉积第二缓冲层和第二单晶层。第二缓冲层包括沉积在第一单晶层上的III族材料，其温度低于III族材料结晶的温度。然后通过将缓冲层加热到高于III族材料结晶以形成单晶的温度，使第III族材料结晶。第二单晶层包括在高于III族半导体材料结晶的温度的第二缓冲层上沉积的III-V族半导体材料。

90. 发明授权

US06534791B1 Epitaxial aluminium-gallium nitride semiconductor substrate 有权
标题翻译：外延铝 - 氮化镓半导体衬底
公开(公告)号：US06534791B1
公开(公告)日：2003-03-18
申请号：US09856724
申请日：2001-09-06
申请人： Nobuaki Hayashi , Tetsuya Takeuchi , Hiroshi Amano , Isamu Akasaki
发明人： Nobuaki Hayashi , Tetsuya Takeuchi , Hiroshi Amano , Isamu Akasaki
IPC分类号： H01L2906
CPC分类号： H01L21/0242 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254
摘要： A nitride semiconductor epitaxial substrate includes a low-temperature-deposited buffer layer, the composition of which is AlxGa1−xN, where 0≦x≦1, and a single crystalline layer, the composition of which is AlyGa1−yN, where 0>y≦1. The single crystalline layer is deposited directly over the low-temperature-deposited buffer layer, wherein the buffer layer has a mole fraction x satisfying (y−0.3)≦x>y.
摘要翻译：氮化物半导体外延衬底包括其组成为Al x Ga 1-x N的低温沉积缓冲层，其中0 <= x <= 1，以及组成为Al y Ga 1-y N的单晶层，其中0 > y <= 1。单晶层直接沉积在低温沉积缓冲层上，其中缓冲层的摩尔分数x满足（y-0.3）≤y> y。

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