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    • 82. 发明授权
    • Oxide films, a method of producing the same and structures having the same
    • 氧化物膜,其制造方法和具有该氧化物膜的结构
    • US07517557B2
    • 2009-04-14
    • US10792852
    • 2004-03-05
    • Makoto IwaiMakoto OhmoriTakashi YoshinoMinoru Imaeda
    • Makoto IwaiMakoto OhmoriTakashi YoshinoMinoru Imaeda
    • C23C16/00B01F3/02
    • C30B25/14C23C16/40C30B25/02C30B29/30
    • An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas “A” containing a first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas “B” containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas “C” is supplied through the third supply hole 11C into the chamber 7. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber 7.
    • 本发明的目的是通过使用两种或更多种金属有机化合物和氧气的原料气体的金属有机化学气相沉积来制造具有良好的表面形态和晶体质量的氧化膜。 使用具有第一供给孔11A,第二供给孔11B,第三供给孔11C和成膜室7的成膜体系。通过第一供给孔11A,第二供给孔11B,第三供给孔11C和成膜室7配置含有第一金属有机化合物的第一原料气体“A” 第一供给孔11A插入到室7.包含第二金属有机化合物的第二原料气体“B”通过第二供给孔11B供给到室7中,并且通过第三供给孔11C供给氧气“C” 在氧气与第二原料气体“F”在室7中混合之前,氧气“D”接触第一原料气体“E”。
    • 83. 发明申请
    • OXIDE FILMS, A METHOD OF PRODUCING THE SAME AND STRUCTURES HAVING THE SAME
    • 氧化膜,其制造方法和具有该氧化膜的结构
    • US20090074963A1
    • 2009-03-19
    • US10792852
    • 2004-03-05
    • Makoto IwaiMakoto OhmoriTakashi YoshinoMinoru Imaeda
    • Makoto IwaiMakoto OhmoriTakashi YoshinoMinoru Imaeda
    • C23C16/06
    • C30B25/14C23C16/40C30B25/02C30B29/30
    • An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas “A” containing al first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas “B” containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas “C” is supplied through the third supply hole 11C into the chamber 7. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber 7.
    • 本发明的目的是通过使用两种或更多种金属有机化合物和氧气的原料气体的金属有机化学气相沉积来制造具有良好的表面形态和晶体质量的氧化膜。 使用具有第一供给孔11A,第二供给孔11B,第三供给孔11C和成膜室7的成膜系统。含有第一金属有机化合物的第一原料气体“A”通过 第一供给孔11A插入到室7.包含第二金属有机化合物的第二原料气体“B”通过第二供给孔11B供给到室7中,并且通过第三供给孔11C供给氧气“C” 在氧气与第二原料气体“F”在室7中混合之前,氧气“D”接触第一原料气体“E”。