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81. 发明申请

US20100214431A1 IMAGE SENSING APPARATUS 有权
标题翻译：图像感应装置
公开(公告)号：US20100214431A1
公开(公告)日：2010-08-26
申请号：US12680529
申请日：2008-10-01
申请人： Yoshinori Watanabe , Yoshinobu Sato
发明人： Yoshinori Watanabe , Yoshinobu Sato
IPC分类号： H04N5/228
CPC分类号： H04N5/23212 , G02B7/34 , G02B7/36 , G03B13/36 , H04N5/3696 , H04N2101/00
摘要： An image sensing apparatus includes an image sensor on which image sensing pixels (R, G, B) and focus detecting pixels (S1, S2) are arrayed. The image sensor has first lines in each of which N (N is an integer equal to or more than 2) focus detecting pixels (S1, S2) are arranged, and second lines in each of which M (M is a natural number less than N) focus detecting pixels (S1, S2) are arranged. The first lines and the second lines are arranged periodically.
摘要翻译：图像感测装置包括其上排列有图像感测像素（R，G，B）和焦点检测像素（S1，S2）的图像传感器。图像传感器具有排列有N（N为2以上的整数）焦点检测像素（S1，S2）的第一行，并且其中M（M为自然数小于 N）个焦点检测像素（S1，S2）。第一行和第二行周期性排列。

82. 发明申请

US20100194913A1 IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD 有权
标题翻译：图像形成装置和图像形成方法
公开(公告)号：US20100194913A1
公开(公告)日：2010-08-05
申请号：US12758446
申请日：2010-04-12
申请人： Yoshinobu Sato
发明人： Yoshinobu Sato
IPC分类号： H04N5/228
CPC分类号： H04N1/00167 , H04N1/333 , H04N1/3872 , H04N1/3877 , H04N19/124 , H04N19/146 , H04N19/154 , H04N19/172 , H04N19/60 , H04N2101/00 , H04N2201/33357
摘要： An image forming apparatus and method capable of decompressing and compressing image data. More specifically, the apparatus and method include decompressing first compressed image data, processing the decompressed image data, selecting from among a plurality of quantization tables a quantization table providing a compression ratio lower than a compression ratio of the first compressed image data, and compressing the processed image data.
摘要翻译：一种能够对图像数据进行解压缩和压缩的图像形成装置和方法。更具体地，该装置和方法包括解压缩第一压缩图像数据，处理解压缩图像数据，从多个量化表中选择提供低于第一压缩图像数据的压缩比的压缩比的量化表，并压缩处理后的图像数据。

83. 发明授权

US07671892B2 Image sensing apparatus, and control method, program, and storage medium of image sensing apparatus 有权
标题翻译：图像感测装置，图像感测装置的控制方法，程序和存储介质
公开(公告)号：US07671892B2
公开(公告)日：2010-03-02
申请号：US11750755
申请日：2007-05-18
申请人： Yoshinori Watanabe , Yoshihiro Honma , Yoshinobu Sato , Masato Kosugi
发明人： Yoshinori Watanabe , Yoshihiro Honma , Yoshinobu Sato , Masato Kosugi
IPC分类号： H04N5/228 , G06K9/46
CPC分类号： H04N5/23248 , H04N5/23254 , H04N5/23258 , H04N5/23267
摘要： An image sensing apparatus according to the present invention includes: an image sensing unit configured to sense an object image and output image signals; a shift amount detecting unit configured to detect a shift amount between two image signals, from the image signals that are sequentially output by the image sensing unit; an image signal synthesizing unit configured to sequentially synthesize the image signals based on detection results of the shift amount detecting unit, and generate a synthesized image signal that has been corrected by the shift amount; and a memory unit configured to accumulate the synthesized image signal, wherein the image signal synthesizing unit performs level adjustment of a signal level, the level adjustment varying for each area of the two image signals that are to be synthesized, and generates the synthesized image signal.
摘要翻译：根据本发明的图像感测装置包括：图像感测单元，被配置为感测对象图像并输出图像信号; 移位量检测单元，被配置为从由所述图像感测单元顺序输出的图像信号中检测两个图像信号之间的偏移量; 图像信号合成单元，被配置为基于移位量检测单元的检测结果顺序合成图像信号，并生成已经通过移位量校正的合成图像信号; 以及存储单元，被配置为累积合成图像信号，其中图像信号合成单元执行信号电平的电平调整，对要合成的两个图像信号的每个区域进行的电平调整变化，并且生成合成图像信号。

84. 发明申请

US20090153720A1 IMAGE PICKUP APPARATUS AND DISPLAY CONTROL METHOD FOR THE SAME 有权
标题翻译：图像拾取装置及其显示控制方法
公开(公告)号：US20090153720A1
公开(公告)日：2009-06-18
申请号：US12331724
申请日：2008-12-10
申请人： Jun Suzuki , Yoshinobu Sato , Takeshi Ogawa
发明人： Jun Suzuki , Yoshinobu Sato , Takeshi Ogawa
IPC分类号： H04N5/222 , H04N5/232
CPC分类号： H04N5/23212 , G06T11/00 , H04N5/23293
摘要： An image pickup apparatus of the present invention comprises an image obtaining part configured to photoelectrically convert a first object image and a second object image formed by light fluxes divided by a pupil divider among light fluxes from an image pickup optical system to generate a first image and a second image, a displaying part configured to display images, and a processing part configured to cause the displaying part to display a superimposed image formed by superimposing the first and second images on each other.
摘要翻译：本发明的图像拾取装置包括图像获取部件，被配置为对来自摄像光学系统的光束中的由光瞳分割器分割的光束形成的第一物体图像和第二物体图像进行光电转换以产生第一图像，第二图像，被配置为显示图像的显示部分和被配置为使显示部分显示通过将第一和第二图像叠加而形成的叠加图像的处理部分。

85. 发明授权

US07505074B2 Image sensing apparatus and its control method 有权
标题翻译：图像传感装置及其控制方法
公开(公告)号：US07505074B2
公开(公告)日：2009-03-17
申请号：US10831326
申请日：2004-04-26
申请人： Hiroaki Yoshino , Yoshinobu Sato
发明人： Hiroaki Yoshino , Yoshinobu Sato
IPC分类号： H04N5/222 , G09G5/00
CPC分类号： H04N5/23293
摘要： In an initial stage where an image obtained by image sensing is displayed, image data in a resolution depending on an image display area of display unit is displayed, thereby a high response can be maintained with respect to a request to display a next image or the like. Further, if a request with an enlargement ratio higher than that in the initial stage has been made, a display image is generated based on image data in a high resolution, thereby a user's request for enlarged display or the like can be fulfilled. When an image (JPEG file) stored in a recording medium is to be displayed, low resolution image data in 640×480 pixel size equivalent to the resolution of the display unit and high resolution image data in an original high resolution indicated with the image file are generated. In the initial stage, the low resolution image data is displayed. If an enlargement request has been made, partial image data cut out from the high resolution image data is resized and is displayed.
摘要翻译：在通过图像感测获得的图像被显示的初始阶段中，显示根据显示单元的图像显示区域的分辨率的图像数据，从而可以相对于显示下一个图像的请求而保持高响应，或者喜欢。此外，如果已经做出了具有高于初始阶段的放大率的请求，则基于高分辨率的图像数据生成显示图像，从而可以满足用户对放大显示等的请求。当要显示存储在记录介质中的图像（JPEG文件）时，生成与显示单元的分辨率相当的640×480像素尺寸的低分辨率图像数据和以图像文件指示的原始高分辨率的高分辨率图像数据。在初始阶段，显示低分辨率图像数据。如果已经进行放大请求，则从高分辨率图像数据切出的部分图像数据被调整大小并被显示。

86. 发明授权

US07408234B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07408234B2
公开(公告)日：2008-08-05
申请号：US11159134
申请日：2005-06-23
申请人： Hisao Ichijo , Hiroyoshi Ogura , Yoshinobu Sato , Teruhisa Ikuta
发明人： Hisao Ichijo , Hiroyoshi Ogura , Yoshinobu Sato , Teruhisa Ikuta
IPC分类号： H01L31/113
CPC分类号： H01L29/0847 , H01L29/1045 , H01L29/1083 , H01L29/66659 , H01L29/7835 , H01L29/78624
摘要： An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for manufacturing thereof, the present invention including: a supporting substrate; a semiconductor layer having a P− type active region that is formed on the supporting substrate, interposing a buried oxide film between the semiconductor layer and the supporting substrate; and a gate electrode that is formed on the semiconductor layer, interposing a gate oxide film and a part of a LOCOS film between the gate electrode and the semiconductor layer, wherein the P− type active region has: an N+ type source region; a P type body region; a P+ type back gate contact region; an N type drain offset region; an N+ type drain contact region; and an N type drain buffer region that is formed in a limited region between the N type drain offset region and the P type body region, and the N type drain buffer region is in contact with a source side end of the LOCOS film and is shallower than the N type drain offset region.
摘要翻译：本发明的目的是提供一种能够实现低导通电阻并保持高的漏极 - 源极击穿电压的半导体器件及其制造方法，本发明包括：支撑衬底; 形成在所述支撑基板上的具有P-SUP型有源区的半导体层，在所述半导体层和所述支撑基板之间插入掩埋氧化膜; 以及形成在所述半导体层上的栅电极，在所述栅电极和所述半导体层之间插入栅极氧化膜和LOCOS膜的一部分，其中所述P +型有源区具有：类型源区域; P型体区; 一个P + +型背栅接触区; N型漏极偏移区域; 一个N + +型漏极接触区域; 以及形成在N型漏极偏移区域和P型体区域之间的有限区域中的N型漏极缓冲区域，并且N型漏极缓冲区域与LOCOS膜的源极侧端部接触并且较浅比N型漏极偏移区域。

87. 发明授权

US07323747B2 Lateral semiconductor device 有权
标题翻译：侧面半导体器件
公开(公告)号：US07323747B2
公开(公告)日：2008-01-29
申请号：US11488154
申请日：2006-07-18
申请人： Teruhisa Ikuta , Hiroyoshi Ogura , Yoshinobu Sato , Toru Terashita
发明人： Teruhisa Ikuta , Hiroyoshi Ogura , Yoshinobu Sato , Toru Terashita
IPC分类号： H01L29/49
CPC分类号： H01L29/7824 , H01L29/0696 , H01L29/1095 , H01L29/4238
摘要： In a high voltage P-channel MOS transistor formed on a silicon-on-insulator (SOI) substrate, a P+-type source region (8), an N-type body region (4) and an N+-body contact diffusion region (10) are surrounded by a P+-type drain region (9) and a P-type drift region (5). A gate electrode (7) is formed to overlap the end portion of the N-type body region (4). The end portion of the N-type body region (4) has a portion in which the gate electrode (7) and the P+-type source region (8) are not adjacent to each other.
摘要翻译：在形成在绝缘体上硅（SOI）衬底上的高电压P沟道MOS晶体管中，P + +型源极区域（8），N型体区域（4）和一个N + +体接触扩散区域（10）被P + +型漏极区域（9）和P型漂移区域（5）围绕。形成与N型体区域（4）的端部重叠的栅电极（7）。 N型体区域（4）的端部具有栅极电极（7）和P + +型源极区域（8）彼此不相邻的部分。

88. 发明申请

US20070285521A1 IMAGE SENSING APPARATUS, AND CONTROL METHOD, PROGRAM, AND STORAGE MEDIUM OF IMAGE SENSING APPARATUS 有权
标题翻译：图像感测装置，图像感测装置的控制方法，程序和存储介质
公开(公告)号：US20070285521A1
公开(公告)日：2007-12-13
申请号：US11750755
申请日：2007-05-18
申请人： Yoshinori Watanabe , Yoshihiro Honma , Yoshinobu Sato , Masato Kosugi
发明人： Yoshinori Watanabe , Yoshihiro Honma , Yoshinobu Sato , Masato Kosugi
IPC分类号： H04N5/228
CPC分类号： H04N5/23248 , H04N5/23254 , H04N5/23258 , H04N5/23267
摘要： An image sensing apparatus according to the present invention includes: an image sensing unit configured to sense an object image and output image signals; a shift amount detecting unit configured to detect a shift amount between two image signals, from the image signals that are sequentially output by the image sensing unit; an image signal synthesizing unit configured to sequentially synthesize the image signals based on detection results of the shift amount detecting unit, and generate a synthesized image signal that has been corrected by the shift amount; and a memory unit configured to accumulate the synthesized image signal, wherein the image signal synthesizing unit performs level adjustment of a signal level, the level adjustment varying for each area of the two image signals that are to be synthesized, and generates the synthesized image signal.
摘要翻译：根据本发明的图像感测装置包括：图像感测单元，被配置为感测对象图像并输出图像信号; 移位量检测单元，被配置为从由所述图像感测单元顺序输出的图像信号中检测两个图像信号之间的偏移量; 图像信号合成单元，被配置为基于移位量检测单元的检测结果顺序合成图像信号，并生成已经通过移位量校正的合成图像信号; 以及存储单元，被配置为累积合成图像信号，其中图像信号合成单元执行信号电平的电平调整，对要合成的两个图像信号的每个区域进行的电平调整变化，并且生成合成图像信号。

89. 发明授权

US07238987B2 Lateral semiconductor device and method for producing the same 有权
标题翻译：侧面半导体器件及其制造方法
公开(公告)号：US07238987B2
公开(公告)日：2007-07-03
申请号：US11242084
申请日：2005-10-04
申请人： Teruhisa Ikuta , Hiroyoshi Ogura , Yoshinobu Sato , Hisao Ichijo
发明人： Teruhisa Ikuta , Hiroyoshi Ogura , Yoshinobu Sato , Hisao Ichijo
IPC分类号： H01L29/76 , H01L21/84
CPC分类号： H01L29/0847 , H01L29/0878 , H01L29/1045 , H01L29/1083 , H01L29/1095 , H01L29/42368 , H01L29/66681 , H01L29/7824 , H01L29/7835
摘要： A high withstand voltage lateral semiconductor device capable of improving its on-state breakdown voltage and safe operation area (SOA) without lowering its current capabilities, and structured so as to be easy to produce. The lateral semiconductor device comprises a second conductivity type second semiconductor region formed in a semiconductor layer so as to be adjacent to or away from a first semiconductor region, a second conductivity type source region, a second conductivity type drain region, and a gate electrode formed on a gate insulating film formed between an end of the source region on the surface of the semiconductor layer and an end of the second semiconductor region, wherein the first semiconductor region is extended from under the source region to partly under the gate electrode, the concentration distribution of a first conductivity type impurity increases in the region ranging from the surface of the semiconductor layer to the embedded insulating film and has a peak under the source region, and the impurity concentration in the semiconductor layer ranging from directly under the first semiconductor region to the embedded insulating film is lower than the surface concentration in the first semiconductor region.
摘要翻译：高耐压横向半导体器件能够在不降低其电流能力的情况下改善其导通电压和安全工作区域（SOA），并且结构化以便于生产。横向半导体器件包括形成在半导体层中以与第一半导体区相邻或离开的第二导电类型的第二半导体区，第二导电类型源极区，第二导电类型漏极区和形成的栅电极在形成在所述半导体层的表面上的所述源极区域的端部与所述第二半导体区域的端部之间的栅极绝缘膜上，其中，所述第一半导体区域从所述源极区域的下部延伸到所述栅极电极的下方，在从半导体层的表面到嵌入绝缘膜的范围内的第一导电型杂质的分布增加，并且在源极区域具有峰值，并且半导体层中的杂质浓度范围从第一半导体区域的正下方到嵌入式绝缘膜低于第一绝缘膜中的表面浓度半导体区域。

90. 发明申请

US20060220130A1 High breakdown voltage semiconductor device and fabrication method of the same 有权
标题翻译：高击穿电压半导体器件及其制造方法
公开(公告)号：US20060220130A1
公开(公告)日：2006-10-05
申请号：US11362116
申请日：2006-02-27
申请人： Yoshinobu Sato , Hiroyoshi Ogura , Hisao Ichijo , Teruhisa Ikuta , Toru Terashita
发明人： Yoshinobu Sato , Hiroyoshi Ogura , Hisao Ichijo , Teruhisa Ikuta , Toru Terashita
IPC分类号： H01L27/12
CPC分类号： H01L29/0878 , H01L27/1203 , H01L29/063 , H01L29/0847 , H01L29/0886 , H01L29/1083 , H01L29/42364 , H01L29/66659 , H01L29/66681 , H01L29/66772 , H01L29/7824 , H01L29/7835 , H01L29/78621 , H01L29/78654
摘要： A high breakdown voltage semiconductor device is formed using an SOI substrate comprising a support substrate, an insulating film, and an active layer. The high breakdown voltage semiconductor device comprises an N-type well region and a P-type drain offset region formed on the active layer, a P-type source region formed on the well region, a P-type drain region formed on the drain offset region, a gate insulating film formed in at least a region interposed between the source region and the drain offset region of the active layer, and a gate electrode formed on the gate insulating film. The device further comprises an N-type deep well region formed under the drain offset region. A concentration peak of N-type impurity for formation of the deep well region is located deeper than a concentration peak of P-type impurity for formation of the drain offset region.
摘要翻译：使用包括支撑衬底，绝缘膜和有源层的SOI衬底形成高耐压电压半导体器件。高击穿电压半导体器件包括在有源层上形成的N型阱区和P型漏极偏移区，形成在阱区上的P型源极区，形成在漏极偏置上的P型漏极区形成在至少位于有源层的源极区域和漏极偏移区域之间的区域中的栅极绝缘膜以及形成在栅极绝缘膜上的栅电极。该器件还包括形成在漏极偏移区域下面的N型深阱区域。用于形成深阱区域的N型杂质的浓度峰位于比用于形成漏极偏移区域的P型杂质的浓度峰值更深的位置。

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