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81. 发明申请

US20050236978A1 Organic electroluminescent device and method for fabricating the same 有权
标题翻译：有机电致发光器件及其制造方法
公开(公告)号：US20050236978A1
公开(公告)日：2005-10-27
申请号：US11113997
申请日：2005-04-26
申请人： Chang Kim , Ho Lee
发明人： Chang Kim , Ho Lee
IPC分类号： H05B33/26 , H01L27/32 , H01L51/50 , H01L51/52 , H05B33/10 , H05B33/00 , H01J1/62
CPC分类号： H01L51/5203 , H01L27/3244 , H01L51/5271 , H01L2251/5315
摘要： An organic EL device based on top emission and a method for fabricating the same arc disclosed. The organic EL device includes a substrate, a thin film transistor (TFT) formed on the substrate, a planarization film formed on the entire surface of the substrate including the TFT, a first electrode formed on the planarization film, having a surface at a corner area higher than a surface at a center area, an organic EL layer formed on the first electrode, and a second electrode formed on the organic EL layer.
摘要翻译：基于顶部发射的有机EL器件和制造相同电弧的方法。有机EL元件包括基板，形成在基板上的薄膜晶体管（TFT），形成在包括TFT的基板的整个表面上的平坦化膜，形成在平坦化膜上的第一电极，在第一电极上形成的有机EL层和形成在有机EL层上的第二电极。

82. 发明申请

US20050116628A1 Organic electroluminescence device 有权
标题翻译：有机电致发光器件
公开(公告)号：US20050116628A1
公开(公告)日：2005-06-02
申请号：US11000077
申请日：2004-12-01
申请人： Ho Lee
发明人： Ho Lee
IPC分类号： H01L51/50 , H01J1/62 , H01J63/04 , H01L51/52 , H05B33/08 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/26
CPC分类号： H01L51/5231
摘要： The present invention provides an organic EL device, by which an anode and cathode are prevented from being short-circuited in case of an emitting cell is blown out. The present invention includes an anode on a substrate, an organic layer on the anode, a cathode on the organic layer, and a short-prevention layer having a tensile stress on the cathode.
摘要翻译：本发明提供一种有机EL器件，通过该有机EL器件，在发射电池被吹出的情况下，防止阳极和阴极短路。本发明包括在基板上的阳极，阳极上的有机层，有机层上的阴极以及在阴极上具有拉伸应力的短路防止层。

83. 发明申请

US20050044032A1 Interactive bid evaluation system, method, and iconic interface for combinatorial auctions 审中-公开
标题翻译：互动竞价评估系统，方法和组合拍卖的标志性界面
公开(公告)号：US20050044032A1
公开(公告)日：2005-02-24
申请号：US10645609
申请日：2003-08-22
申请人： Ho Lee , Juhnyoung Lee , Jayant Kalagnanam , Sudhir Verma
发明人： Ho Lee , Juhnyoung Lee , Jayant Kalagnanam , Sudhir Verma
IPC分类号： G06Q30/00 , G06F17/60
CPC分类号： G06Q30/08 , G06Q40/04
摘要： An interactive bid evaluation system (method and storage medium) for a combinatorial auction, includes a display for scaling a plurality of bids and items, on a display window.
摘要翻译：用于组合拍卖的交互式出价评估系统（方法和存储介质）包括用于在显示窗口上缩放多个出价和项目的显示器。

84. 发明申请

US20050042113A1 Suction muffler connector and compressor therewith 有权
标题翻译：吸气消声器连接器和压缩机
公开(公告)号：US20050042113A1
公开(公告)日：2005-02-24
申请号：US10814181
申请日：2004-04-01
申请人： Ho Lee
发明人： Ho Lee
IPC分类号： F04B39/00 , F04B39/12 , F04B53/00
CPC分类号： F04B39/0072 , F04B39/0061 , F04B39/123 , Y10S181/403 , Y10S417/902
摘要： Suction muffler connector, and compressor therewith, the suction muffler connector in a compressor having a suction pipe for guiding refrigerant into the compressor, and a suction muffler for attenuating noise of the refrigerant in the suction pipe including a connection pipe having one side connected to the suction pipe for guiding the refrigerant to the suction muffler, and a connection pipe fitted to surround the connection spring for preventing exposure of an outside circumference of the connection spring, having a top part held at an inlet to the suction muffler, thereby preventing leakage of refrigerant introduced into the suction muffler.
摘要翻译：吸入式消声器连接器和压缩机，具有用于将制冷剂引导到压缩机中的吸入管的压缩机中的吸入消声器连接器和用于衰减吸入管中的制冷剂的噪声的吸入消声器，该吸入消声器具有连接管用于将制冷剂引导到吸入消声器的吸入管，以及连接管，其被配置成围绕连接弹簧，以防止连接弹簧的外周暴露，具有保持在吸入消声器的入口处的顶部，从而防止制冷剂引入吸入消声器。

85. 发明申请

US20050009265A1 Method of fabricating MOS transistor using total gate silicidation process 失效
标题翻译：使用全栅极硅化工艺制造MOS晶体管的方法
公开(公告)号：US20050009265A1
公开(公告)日：2005-01-13
申请号：US10806301
申请日：2004-03-22
申请人： Jae-Yoon Yoo , Hwa-Sung Rhee , Ho Lee , Seung-Hwan Lee
发明人： Jae-Yoon Yoo , Hwa-Sung Rhee , Ho Lee , Seung-Hwan Lee
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8238 , H01L29/49 , H01L21/84
CPC分类号： H01L29/665 , H01L21/28097 , H01L21/823814 , H01L21/823835 , H01L29/4975 , H01L29/66545
摘要： There is provided a method of fabricating a MOS transistor using a total gate silicidation process. The method includes forming an insulated gate pattern on a semiconductor substrate. The insulated gate pattern includes a silicon pattern and a sacrificial layer pattern, which are sequentially stacked. Spacers covering sidewalls of the gate pattern are formed, and source/drain regions are formed by injecting impurity ions into the semiconductor substrate using the spacers and the gate pattern as ion injection masks. The silicon pattern is exposed by removing the sacrificial layer pattern on the semiconductor substrate having the source/drain regions. The exposed silicon pattern is fully converted into a gate silicide layer, and concurrently a source/drain silicide layer is selectively formed on the surface of the source/drain regions.
摘要翻译：提供了使用总栅极硅化工艺制造MOS晶体管的方法。该方法包括在半导体衬底上形成绝缘栅极图案。绝缘栅图案包括依次层叠的硅图案和牺牲层图案。形成覆盖栅极图案的侧壁的间隔物，并且通过使用间隔物和栅极图案作为离子注入掩模将杂质离子注入到半导体衬底中来形成源极/漏极区域。通过去除具有源极/漏极区域的半导体衬底上的牺牲层图案来暴露硅图案。暴露的硅图案完全转换为栅极硅化物层，并且同时在源极/漏极区域的表面上选择性地形成源极/漏极硅化物层。

86. 发明授权

US6086820A Method for producing electrodes for Ni/metal hydride alloy secondary cells 失效
标题翻译：镍/金属氢化物合金二次电池用电极的制造方法
公开(公告)号：US6086820A
公开(公告)日：2000-07-11
申请号：US60277
申请日：1998-04-14
申请人： Jai Young Lee , Kuk Jin Jang , Jae Han Jung , Dong Myung Kim , Ji Sang Yu , Sang Min Lee , Jeong Gun Park , Ho Lee
发明人： Jai Young Lee , Kuk Jin Jang , Jae Han Jung , Dong Myung Kim , Ji Sang Yu , Sang Min Lee , Jeong Gun Park , Ho Lee
IPC分类号： H01M4/52 , B22F1/00 , H01M4/24 , H01M4/38 , B22F3/02
CPC分类号： H01M4/242 , B22F1/0003 , H01M4/383 , Y02P70/54
摘要： A method for producing an electrode of Ni/metal hydride alloy secondary cells. The electrode may be produced by mixing an active material with approximately 10-50 wt % of Cu powders, which can serve as a binder as well as a current collector, and cold-pressing the mixture at a pressure of 10 ton/cm. As the Cu-compacted electrode continues to experience the cycle of charge and discharge, the desolution-deposition of Cu is gradually produced. This desolution-deposition of Cu allows Cu to be deposited on the surface of the electrode comprising the hydrogen storage alloy, so that the electrode can be similar to a conventional Cu-electroless plated electrode in surface morphology. Consequently, the method of the invention can be an alternative for conventional electroless plating, which significantly improves the general functions of hydrogen storage alloy electrode, including low temperature dischargeability and high rate capability, without producing pollution of the environment.
摘要翻译：一种Ni /金属氢化物合金二次电池电极的制造方法。电极可以通过将活性材料与约10-50重量％的Cu粉末混合来制备，Cu粉末可以用作粘合剂以及集电器，并以10吨/厘米3的压力冷压该混合物。随着Cu压实电极继续经受充放电循环，逐渐产生Cu的溶解沉积。 Cu的这种溶解沉积允许Cu沉积在包含储氢合金的电极的表面上，使得电极可以类似于表面形态的常规Cu-无电镀电极。因此，本发明的方法可以是常规化学镀的替代方案，其显着地改善了储氢合金电极的一般功能，包括低温放电性和高速率能力，而不会产生环境污染。

87. 发明授权

US5723645A Method for preparing 3-aminopropane phosphoric acid 失效
标题翻译： 3-氨基丙烷磷酸的制备方法
公开(公告)号：US5723645A
公开(公告)日：1998-03-03
申请号：US744352
申请日：1996-11-04
申请人： Ok Sub Lee , Young Hun Byon , Bo Sub Lee , Jong Eon Hong , Jae Suk Ko , Yun Ki Cho , Ho Lee
发明人： Ok Sub Lee , Young Hun Byon , Bo Sub Lee , Jong Eon Hong , Jae Suk Ko , Yun Ki Cho , Ho Lee
IPC分类号： C07F9/09
CPC分类号： C07F9/091
摘要： Disclosed herein is a method for preparing 3-aminopropane phosphoric acid represented by the formula (I), comprising the steps of (a) reacting 3-amino-1-propanoi with phosphorus oxychloride at a low temperature, and (b) hydrolyzing the product of the step (a) in the presence of an acidic catalyst, and a cosmetic composition containing 3-aminopropanic phosphoric acid or its salts as an active ingredient. ##STR1##
摘要翻译：本文公开了一种制备由式（I）表示的3-氨基丙烷磷酸的方法，包括以下步骤：（a）在低温下使3-氨基-1-丙酰与磷酰氯反应，和（b）水解产物的步骤（a）在酸性催化剂的存在下进行，以及含有3-氨基丙酸或其盐作为有效成分的化妆品组合物。（一）

88. 发明公开

US20230288012A1 PIPE REINFORCEMENT CAP FOR SEAT BELT 审中-公开
公开(公告)号：US20230288012A1
公开(公告)日：2023-09-14
申请号：US18118548
申请日：2023-03-07
申请人： Ho Lee
发明人： Ho Lee
IPC分类号： F16L55/115
CPC分类号： F16L55/1157 , B60R2022/4642
摘要： The present invention relates to a reinforcement cap for reinforcing durability of a pipe used in a seat belt, and more particularly, a reinforcement cap for preventing a pipe from being broken due to explosion of an explosion device stored in the pipe or preventing the explosion device fixed by pipe closing work from being discharged out of the pipe so that an explosive force of the explosion device is transferred to a place other than driving balls stored in the pipe, and a pipe reinforcement cap for a seat belt for preventing a malfunction of the seat belt.

89. 发明授权

US08625778B2 Method of authentication, and image display apparatus incorporating the method 有权
标题翻译：验证方法，以及包含该方法的图像显示装置
公开(公告)号：US08625778B2
公开(公告)日：2014-01-07
申请号：US11737235
申请日：2007-04-19
申请人： Jae-woong Jung , Ho Lee
发明人： Jae-woong Jung , Ho Lee
IPC分类号： H04K1/00
CPC分类号： H04N7/16 , G06F21/31 , G06F2221/2129 , G09G5/006 , G09G2370/047 , H04N21/2541 , H04N21/25816 , H04N21/43632 , H04N21/63775
摘要： A method of authentication and an image display apparatus incorporating the method are provided. The method of authentication includes determining whether or not an error is generated in an authentication with an externally-connected multimedia source, and upon determination that the authentication error is generated, changing a reset signal to re-attempt the authentication and output to the multimedia source. As a result, successful High Bandwidth Digital Content Protection (HDCP) authentication can be provided at all times.
摘要翻译：提供了一种认证方法和包含该方法的图像显示装置。验证方法包括确定在外部连接的多媒体源的认证中是否产生错误，并且在确定产生认证错误时，改变复位信号以重新尝试认证并将其输出到多媒体源。因此，可以随时提供成功的高带宽数字内容保护（HDCP）身份验证。

90. 发明申请

US20120228720A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES HAVING DIFFERENT THICKNESS SILICON-GERMANIUM LAYERS 有权
标题翻译：具有不同厚度硅 - 锗层的半导体集成电路器件
公开(公告)号：US20120228720A1
公开(公告)日：2012-09-13
申请号：US13476121
申请日：2012-05-21
申请人： Myung-Sun Kim , Hwa-Sung Rhee , Ho Lee , Ji-Hye Yi
发明人： Myung-Sun Kim , Hwa-Sung Rhee , Ho Lee , Ji-Hye Yi
IPC分类号： H01L27/088
CPC分类号： H01L29/7848 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L29/165 , H01L29/66636 , H01L29/78
摘要： Methods of fabricating semiconductor integrated circuit devices are provided. A substrate is provided with gate patterns formed on first and second regions. Spaces between gate patterns on the first region are narrower than spaces between gate patterns on the second region. Source/drain trenches are formed in the substrate on opposite sides of the gate patterns on the first and second regions. A first silicon-germanium (SiGe) epitaxial layer is formed that partially fills the source/drain trenches using a first silicon source gas. A second SiGe epitaxial layer is formed directly on the first SiGe epitaxial layer to further fill the source/drain trenches using a second silicon source gas that is different from the first silicon source gas.
摘要翻译：提供制造半导体集成电路器件的方法。基板设置有形成在第一和第二区域上的栅极图案。第一区域上的栅极图案之间的间隔比第二区域上的栅极图案之间的空间窄。源极/漏极沟槽在第一和第二区域上的栅极图案的相对侧上的衬底中形成。形成第一硅锗（SiGe）外延层，其使用第一硅源气体部分地填充源极/漏极沟槽。直接在第一SiGe外延层上形成第二SiGe外延层，以使用不同于第一硅源气体的第二硅源气体来进一步填充源/漏沟槽。

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