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81. 发明专利

JP2001091929A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JP2001091929A
公开(公告)日：2001-04-06
申请号：JP27085199
申请日：1999-09-24
申请人： HITACHI LTD
发明人： KASAI TSUTOMU , YAMAMOTO HIDEAKI , NAKATANI MITSUO
IPC分类号： G02F1/1333 , G02F1/136 , G02F1/1368
摘要： PROBLEM TO BE SOLVED: To avoid defective display due to the defect of an insulating film or a protective film. SOLUTION: This liquid crystal display device is provided with a pair of electrodes for generating an electric field in a direction parallel to a pair of transparent substrates in a pixel region of a liquid crystal side of one transparent substrate of the pair of transparent substrates disposed being opposed to each other through a liquid crystal and either electrode of the pair of the electrodes has two or more insulating layers laminated on its upper layer.

82. 发明专利

JPH11167128A PRODUCTION OF LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH11167128A
公开(公告)日：1999-06-22
申请号：JP26427998
申请日：1998-09-18
申请人： HITACHI LTD
发明人： TANAKA YASUO , TSUKADA TOSHIHISA , KANEKO YOSHIYUKI , YAMAMOTO HIDEAKI , MATSUMARU HARUO , TSUTSUI KEN
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To prevent the degradation in an aperture ratio without increasing the exclusive area rate of additive capacitors even if the additive capacitors are increased by using a material contg. an oxide of a metal consisting essentially of Ta as a dielectric film of the superposed parts constituting the additive capacitors. SOLUTION: An SiO2 ground surface film 20 for protection of a translucent glass substrate 14 is formed on this glass substrate. Next, the metal Ta is deposited and is etched to form desired gate wiring patterns 22, 23. The difference in level at the ends of the Ta patterns is provided with a taper. The Ta gate wiring patterns 22, 23 are anodically oxidized to form an anodically oxidized Ta film 24. Next, an SiN gate insulating film 21, an a-SiH(i) film 8 and an SiN channel protective film 25 are continuously deposited and is etched, by which island-shaped patterns of the SiN channel protective film 25 are formed. Next, the island-shaped patterns of a-Si:H(n-) 15 and a-Si: H(i) 8 are formed. Signal line patterns 1 and source electrode patterns 5 are formed. Finally, a protective film 12 is formed.

83. 发明专利

JPH1197562A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH1197562A
公开(公告)日：1999-04-09
申请号：JP21066898
申请日：1998-07-27
申请人： HITACHI LTD
发明人： KOMORI KAZUHIRO , NISHIMOTO TOSHIAKI , MEGURO SATOSHI , KUME HITOSHI , YAMAMOTO HIDEAKI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To prevent dielectric breakdown of an insulating film at an edge of a floating gate electrode. SOLUTION: A semiconductor integrated circuit device has non-volatile memory cells of a MISFET type which utilizes a tunnel phenomenon to a first insulating film to erase information from a source region. The device includes (1) a floating gate electrode 7 provided on a semiconductor substrate via a second insulating film 8, (2) a control gate electrode 9 provided on the floating gate electrode 7 via a second insulating film 8, and (3) first and second n type semiconductor regions 11 and 14 acting as source and drain regions of the MISFET and provided at both ends of the floating and control gate electrodes on the semiconductor substrate. The floating gate electrode 7 is such a shape that eases electric field concentration at its corners.

84. 发明专利

JPH10311987A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH10311987A
公开(公告)日：1998-11-24
申请号：JP12362497
申请日：1997-05-14
申请人： HITACHI LTD
发明人： AMANO SATOSHI , YAMAMOTO HIDEAKI , KIKUCHI MASAHITO
IPC分类号： G02F1/1333 , G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To prevent the discontinuity of a scan signal line by forming the scan signal line so that its extending direction is matched with the direction orthogonally crossed to a take-plate direction in a glass raw plate manufacturing process of one side transparent glass substrate. SOLUTION: The scan signal lines 2 extended in the (x) direction and arranged side by side in the (y) direction is formed on the liquid crystal side surface of the transparent glass substrate 1. Further, video signal lines 3 insulated from these scan signal lines 2, extended in the (y) direction and arranged side by side in the (x) direction are formed. Then, respective pixel areas are constituted of rectangular areas surrounded by the scan signal lines 2 adjacent to each other and the video signal lines 3 adjacent to each other. In such a constitution, the scan signal lines 2 are constituted of Cr or its alloy layer, and are formed directly on the liquid crystal side surface of the transparent glass substrate 1 so as to be extended in the (x) direction of the transparent glass substrate 1 and arranged side by side in the (y) direction. Thus, the occurrence of the snapping of a wire in the scan signal lines 2 is prevented.

85. 发明专利

JPH10282518A LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH10282518A
公开(公告)日：1998-10-23
申请号：JP8358097
申请日：1997-04-02
申请人： HITACHI LTD , HITACHI DEVICE ENG
发明人： SATO TSUTOMU , ABU KOICHI , NAKAHARA YOSHIHIKO , YAMAMOTO HIDEAKI , KIKUMOTO ATSUSHI , HIROSHIMA MINORU , NAKANO YASUSHI , ISODA TAKASHI
IPC分类号： G02F1/136 , G02F1/1368 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To eliminate the evil influence of the storage of static electricity caused by the rubbing of the alignments layer of first and second common lines without giving disturbance to a short circuit inspection or the like between signal lines by mutually connecting the first common line and the second common line through a high resistance. SOLUTION: An electrostatic protection network possesses the first and second common lines 7 and 8. The common line 7 is formed in parallel with a video signal line 4. Then, the first common line 7 is connected with each scanning signal line 2 orthogonal to it through a non-linear element D. On the other hand, the second common line 8 is formed in parallel with the scanning signal line 2, and is connected to the video signal line 4 where an external terminal is not provided in its vicinity through the non-linear element D. Thus, both end parts of the second common line 8 are mutually connected to the upper end parts of the first common line 7 respectively arranged right and left through the high resistance 10. Also, both end parts of the second common line 8 are mutually connected to the lower end parts of the first common line 7 respectively arranged right and left through the high resistance 10.

86. 发明专利

JPH0978263A CHROMIUM ETCHING DEVICE 失效
公开(公告)号：JPH0978263A
公开(公告)日：1997-03-25
申请号：JP23356695
申请日：1995-09-12
申请人： HITACHI LTD
发明人： KASAI TSUTOMU , INOUE HIROYUKI , YAMAMOTO HIDEAKI , AOKI AKIRA , MITSUMA TOSHIYUKI
IPC分类号： G02F1/1345 , C23F1/08 , H01L21/28 , H01L21/306 , H01L21/336 , H01L29/786
摘要： PROBLEM TO BE SOLVED: To prevent the adverse influence of deposits by a Cr etching liquid and to prevent the degradation in yield and the increase in the quantities of the parts to be used by pouring fluid on the peripheral parts on the side opposite to the gravity direction of the inlet of the inside wall surfaces of a Cr etching vessel. SOLUTION: A material 30 to be etched is carried into the etching vessel 2 via plural rollers 1A of a transporting path 1 from the inlet 20 having a shutter 2B provided with a wall part 2A. The etching liquid mainly composed of ceric ammonium nitrate is sprayed from plural nozzles 6 to this material 30 to be etched to etch the Cr layer formed on its front surface. The fluid, more preferably, the Cr etching liquid is poured to the peripheral parts on the side opposite to the gravity direction of at least the inlet of the inside wall surfaces from the fluid ejecting nozzles 40A, 40B arranged above the inlet 20 of this Cr etching device.

87. 发明专利

JP2544569B2 失效
公开(公告)号：JP2544569B2
公开(公告)日：1996-10-16
申请号：JP12381193
申请日：1993-05-26
申请人： HITACHI LTD
发明人： KOMORI KAZUHIRO , MEGURO SATOSHI , HAGIWARA TAKAAKI , KUME HITOSHI , TSUKADA TOSHIHISA , YAMAMOTO HIDEAKI
IPC分类号： G11C17/00 , G11C16/02 , G11C16/04 , G11C16/06 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792

88. 发明专利

JPH06260450A DRY-ETCHING DEVICE 失效
公开(公告)号：JPH06260450A
公开(公告)日：1994-09-16
申请号：JP4382293
申请日：1993-03-04
申请人： HITACHI LTD
发明人： YAMAMOTO HIDEAKI , HORII JUICHI , WAKUI TAKAYUKI , KONISHI NOBUTAKE
IPC分类号： C23F4/00 , G02F1/136 , G02F1/1368 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To cut down the device cost for increasing the throughput by a method wherein an exhaust chamber is connected to exhaust ports provided on the periphries of respective opposite electrodes while gas leading-in ports are provided on respective electrodes for arranging homogenizing sheets between the groups of respective parallel flat plate electrode couples. CONSTITUTION:Upper electrodes UE 11-UE 14 as shower electrodes are arranged to jet an etchant gas Ga toward lower electrodes. Besides, exhaust ports opening to exhaust chamber PC are provided in the space between chamber wall EW and the peripheries of the lower electrodes LE 11-LE 14. Thus, the throughput can be increased while cutting down the device cost without widening the electrode area. Furthermore, partition plates UP1, UP2, UP3 are provided in an etching chamber. Through these procedures, the etchant gas flow and plasma discharge thereof between the groups of respective parallel flat electrode couples can be homogenized.

89. 发明专利

JPH06222385A THIN FILM TRANSISTOR SUBSTRATE AND ITS PRODUCTION, LIQUID CRYSTAL DISPLAY PANEL AND LIQUID CRYSTAL DISPLAY DEVICE 失效
公开(公告)号：JPH06222385A
公开(公告)日：1994-08-12
申请号：JP829993
申请日：1993-01-21
申请人： HITACHI LTD
发明人： YAMAMOTO HIDEAKI , KIKUCHI HIROSHI , SHIROHASHI KAZUO , KASE KENICHI
IPC分类号： G02F1/136 , C23C18/31 , G02F1/1368 , H01L21/336 , H01L29/40 , H01L29/78 , H01L29/786 , H01L29/784
摘要： PURPOSE:To obtain a thin film transistor substrate, a liquid crystal panel and a liquid crystal display device which are low in production cost by constituting a terminal of an aluminium film composing a scanning signal line, a nickel plated film and a transparent conductive film successively formed thereon. CONSTITUTION:In a connection structure of a display matrix from the scanning signal line GL to a gate terminal GTM being an external connecting terminal, the gate terminal GTM is constituted of the aluminium film (g), a palladium film PDF formed on the aluminium film (g), the nickel plated film NIF formed on the palladium film PDF and the transparent conductive film d2 formed on the nickel plated film NIF. Since the conductive film only composing the terminal is not provided, a process in which the conductive film only composing the terminal is formed and patternizing is executed is unnecessary. Thus manufacturing process is simple and yield is improved.

90. 发明专利

JPH06104435A MANUFACTURE OF FILM TRANSISTOR SUBSTRATE 失效
公开(公告)号：JPH06104435A
公开(公告)日：1994-04-15
申请号：JP24990892
申请日：1992-09-18
申请人： HITACHI LTD
发明人： KASE KENICHI , YAMAMOTO HIDEAKI , SHIROHASHI KAZUO , TSUKII NORIO
IPC分类号： H01L21/306 , H01L21/308 , H01L21/768 , H01L29/78 , H01L29/786 , H01L29/784 , H01L21/90
摘要： PURPOSE:To form a wiring pattern without causing the occurrence of Ta residue by etching the Al-Ta alloy film on a glass substrate in mixed acid where F ions are added. CONSTITUTION:Oxie silicon films SiO are formed on both sides of a transparent glass substrate SUB1 by dipping and then are baked. The first conductive film g1 of a Cr film is sputtered to do photolithography processing, and then it is etched using ammonium cerium nitrate solution. Hereby, a gate terminal GTM, a drain terminal DTM, an anodized bus line and pad are formed. Next, the second conductive film g2 of AlTa0.85 is sputtered, and after photolithography processing, and etchant containing F ions is prepared by adding 0.05-0.3% NH4F (40%) to the Al etchant consisting of the mixed acid (phosphorus acid: nitric acid: acetic acid: water = 16:1:2:1), and selective is applied. Ta residue never remain in the electrode pattern after processing, and a TFT substrate good in yield rate and high in reliability can be gotten.

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