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81. 发明申请

US20100081280A1 METHOD OF PRODUCING A MIXED SUBSTRATE 审中-公开
标题翻译：生产混合基材的方法
公开(公告)号：US20100081280A1
公开(公告)日：2010-04-01
申请号：US12515021
申请日：2007-11-28
申请人： Hubert Moriceau , Sylvie Satori , Anne-Marie Charvet
发明人： Hubert Moriceau , Sylvie Satori , Anne-Marie Charvet
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , H01L21/76208 , H01L21/76251
摘要： The invention concerns a method of producing a mixed substrate, that is to say a substrate comprising at least one block of material different from the material of the substrate, the method comprising the following successive steps: formation of a cavity in a substrate of first material, and from one of its faces, the formation of the cavity being carried out so as to leave at least part of the first material projecting from the bottom of the cavity, formation of the block by means of a reaction, initiated from the walls of the cavity, between the first material and at least one chemical element contributed in order to obtain a second material filling the cavity, the formation of the block being carried out so as to obtain, from the part of the first material projecting, a protrusion of second material projecting on said face of the substrate.
摘要翻译：本发明涉及一种生产混合基质的方法，也就是说基底包含至少一块不同于基底材料的材料块，该方法包括以下连续步骤：在第一材料的基底中形成空腔，并且从其一个表面，形成腔体，以便使至少部分第一材料从空腔的底部突出，通过反应形成块体，其由壁的壁所述第一材料和所述至少一种化学元素之间的空腔用于获得填充所述空腔的第二材料，所述块的形成被执行以便从所述第一材料的所述部分突出得到在所述基板的所述面上突出的第二材料。

82. 发明申请

US20090165277A1 METHOD AND DEVICE FOR SEPARATING A STRUCTURE 失效
标题翻译：分离结构的方法和装置
公开(公告)号：US20090165277A1
公开(公告)日：2009-07-02
申请号：US12341645
申请日：2008-12-22
申请人： Marc Zussy , Lea Di Cioccio , Christophe Morales , Hubert Moriceau
发明人： Marc Zussy , Lea Di Cioccio , Christophe Morales , Hubert Moriceau
IPC分类号： B23P19/00
CPC分类号： B28D5/0017 , H01L21/67092 , Y10T29/49815 , Y10T29/49821 , Y10T29/49822 , Y10T29/53274 , Y10T29/53683 , Y10T29/54
摘要： A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.
摘要翻译：一种分离包括限定要分离的两个子结构的脆弱区域的结构的方法，其中至少一个平面叶片在对应于脆弱区域的中间平面的分离平面中前进到结构的入口边缘，方向为朝向结构的出口边缘前进，以便引起两个子结构的逐渐分离，并且其中分离平面中的叶片的倾斜相对于前进方向变化。

83. 发明申请

US20090133819A1 DEFORMATION MODERATION METHOD 有权
标题翻译：变形演化方法
公开(公告)号：US20090133819A1
公开(公告)日：2009-05-28
申请号：US12276112
申请日：2008-11-21
申请人： Hubert Moriceau , Jean-Claude Roussin
发明人： Hubert Moriceau , Jean-Claude Roussin
IPC分类号： B32B38/10
CPC分类号： H01F10/24 , C30B29/28 , C30B29/36 , H01F41/34 , H01L21/76254 , H01L43/12 , Y10S438/933
摘要： A method of transferring a layer of a first material onto a second substrate of a second material includes, a step of forming a first embrittlement plane in a first substrate in first material, by a first ion and/or atom implantation through a first face of said substrate, a step of forming a second embrittlement plane in said first substrate, by a first ion and/or atom implantation through a second face of said substrate, in order to reduce a curvature of this first substrate, a step of assembling the first and second substrates, and a step of separating a layer from the first substrate at the level of the first embrittlement plane, without separation at the level of the second embrittlement plane.
摘要翻译：将第一材料层转移到第二材料的第二衬底上的方法包括：通过第一离子和/或原子注入在第一材料中的第一衬底中形成第一脆化面的步骤，所述衬底是通过所述衬底的第二面通过第一离子和/或原子注入在所述第一衬底中形成第二脆化面的步骤，以便减小所述第一衬底的曲率，和第二基板，以及在第一脆化平面的水平处从第一基板分离层而不在第二脆化面的水平分离的步骤。

84. 发明申请

US20090133811A1 PROCESS FOR TRANSFERRING FILMS 失效
标题翻译：传输片的过程
公开(公告)号：US20090133811A1
公开(公告)日：2009-05-28
申请号：US12276125
申请日：2008-11-21
申请人： Hubert Moriceau , Maurice Couchaud , Jean-Luc Deschanvres , Anne-Laure Joudrier
发明人： Hubert Moriceau , Maurice Couchaud , Jean-Luc Deschanvres , Anne-Laure Joudrier
IPC分类号： B32B38/00 , B32B38/10
CPC分类号： H01F10/24 , C30B29/28 , C30B31/22 , C30B33/06 , H01F41/34 , H01L21/76254
摘要： A process of transferring a layer of a first material from a first substrate, having defects in a zone close to the surface, onto a host substrate made of a second material includes a step of thinning the first substrate in order to form a first thinned substrate, an ion or atom implantation in the first substrate in order to form an implantation plane therein, delimiting the layer to be transferred, and a transfer of the layer onto the host substrate by fracturing the substrate along the implantation plane.
摘要翻译：将具有靠近表面的区域中的缺陷的第一材料层转移到由第二材料制成的主体衬底上的工艺包括使第一衬底变薄以形成第一薄化衬底的步骤在第一衬底中的离子或原子注入，以便在其中形成注入平面，限定待转移的层，以及通过沿着注入平面压裂衬底将层转移到主衬底上。

85. 发明授权

US07494897B2 Method of producing mixed substrates and structure thus obtained 有权
标题翻译：制备混合基材的方法和由此获得的结构
公开(公告)号：US07494897B2
公开(公告)日：2009-02-24
申请号：US10540303
申请日：2003-12-22
申请人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
发明人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
IPC分类号： H01L21/30
CPC分类号： H01L21/76264 , H01L21/187 , H01L21/76275
摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.
摘要翻译：本发明的方法包括一个制备步骤，在该步骤中衬底被一层覆盖，一个压制步骤，其中将包括凹凸图案的模具压入上述层的厚度的一部分中，至少一个蚀刻步骤，其中蚀刻该层，直到基板的表面的一部分被剥离，以及基板蚀刻步骤，由此使用从模具图案限定的蚀刻图案来蚀刻该基板。制备步骤包括由可固化材料的下层形成的子步骤，涉及所述层的固化的步骤和包括形成邻近固化的外部亚层的子步骤子层。此外，在挤压步骤中，模具中的上述突起穿透外部子层，直到与固化的子层接触。

86. 发明申请

US20080196747A1 Molecular bonding method with cleaning with hydrofluoric acid in vapor phase and rinsing with deionized water 失效
标题翻译：分子键合方法用氢氟酸在蒸气相中清洗并用去离子水冲洗
公开(公告)号：US20080196747A1
公开(公告)日：2008-08-21
申请号：US12068638
申请日：2008-02-08
申请人： Frank Fournel , Hubert Moriceau , Christophe Morales , Pierre Perreau
发明人： Frank Fournel , Hubert Moriceau , Christophe Morales , Pierre Perreau
IPC分类号： B08B3/00
CPC分类号： H01L21/02049 , H01L21/187
摘要： Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively: a cleaning step of the two free surfaces with hydrofluoric acid in vapor phase to make the two free surfaces hydrophobic, a rinsing step of said free surfaces with deionized water with a time less than or equal to 30 seconds a step of bringing said free surfaces into contact.
摘要翻译：通过例如由单晶硅晶片形成的第一和第二基板的两个自由表面的分子结合的粘附性至少包括：两个自由表面的清洁步骤，其中气相中的氢氟酸使两个自由表面疏水，用去离子水冲洗所述游离表面的时间小于或等于30秒，使所述自由表面接触的步骤。

87. 发明申请

US20070259528A1 Method for Providing Mixed Stacked Structures, with Various Insulating Zones and/or Electrically Conductiong Zones Vertically Localized 有权
标题翻译：提供混合堆叠结构的方法，具有垂直定位的各种绝缘区和/或电导区
公开(公告)号：US20070259528A1
公开(公告)日：2007-11-08
申请号：US11576259
申请日：2005-10-06
申请人： Hubert Moriceau , Christophe Morales , Marc Zussy , Jerome Dechamp
发明人： Hubert Moriceau , Christophe Morales , Marc Zussy , Jerome Dechamp
IPC分类号： H01L21/31 , H01L21/311
CPC分类号： H01L21/76251 , H01L21/7624 , H01L21/76254 , H01L21/76259
摘要： The invention relates to a method for producing a semiconducting structure on a semiconducting substrate, one surface of which has a topology, this method including: a) a step for forming a first layer (24) in a first insulating material on said surface, b) a step for forming a second layer in a second insulating material (28), less dense than the first insulating material, with a thickness between 2.5 p and 3.5 p, c) a step for planarization of the assembly.
摘要翻译：本发明涉及在半导体衬底上制造半导体结构的方法，其一个表面具有拓扑结构，该方法包括：a）在所述表面上形成第一绝缘材料中的第一层（24）的步骤，b ）在第二绝缘材料（28）中形成第二层的步骤，第二绝缘材料（28）的密度小于第一绝缘材料，厚度在2.5p和3.5p之间，c）用于使组件平坦化的步骤。

88. 发明授权

US07229899B2 Process for the transfer of a thin film 有权
标题翻译：薄膜转印工艺
公开(公告)号：US07229899B2
公开(公告)日：2007-06-12
申请号：US10667707
申请日：2003-09-22
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

89. 发明授权

US07115481B2 Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效
标题翻译：用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层
公开(公告)号：US07115481B2
公开(公告)日：2006-10-03
申请号：US10686084
申请日：2003-10-14
申请人： Bruno Ghyselen , Cécile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
发明人： Bruno Ghyselen , Cécile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate. The method includes providing an initial structure that includes a useful layer having a front face on a support substrate. Atomic species are implanted into the useful layer to a controlled mean implantation depth to form a zone of weakness within the useful layer that defines first and second useful layers. Next, a stiffening substrate is bonded to the front face of the initial structure. The first useful layer is then detached from the second useful layer along the zone of weakness to obtain a pair of semiconductor structures with a first structure including the stiffening substrate and the first useful layer and a second structure including the support substrate and the second useful layer. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译：一种用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层。该方法包括提供初始结构，其包括在支撑衬底上具有正面的有用层。将原子物质植入有用层中至受控的平均植入深度，以形成限定第一和第二有用层的有用层内的弱点区域。接下来，将加强基板粘合到初始结构的正面。然后沿着弱化区从第二有用层分离第一有用层，以获得一对具有第一结构的半导体结构，该第一结构包括加强衬底和第一有用层，以及包括支撑衬底和第二有用层的第二结构。所获得的结构可用于电子学，光电子学或光学领域。

90. 发明申请

US20060166461A1 Method of producing mixed substrates and structure thus obtained 有权
公开(公告)号：US20060166461A1
公开(公告)日：2006-07-27
申请号：US10540303
申请日：2003-12-22
申请人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
发明人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76264 , H01L21/187 , H01L21/76275
摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.

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