专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20050226904A1 Fibrous composite for tissue engineering 有权
标题翻译：组织工程纤维复合材料
公开(公告)号：US20050226904A1
公开(公告)日：2005-10-13
申请号：US10507059
申请日：2003-03-14
申请人： Hoon Choi , I-Wei Chen
发明人： Hoon Choi , I-Wei Chen
IPC分类号： A61F2/00 , A61F2/02 , A61K9/70 , A61L27/18 , A61L27/44 , C12N20060101
CPC分类号： A61L27/56 , A61L27/025 , A61L27/18 , A61L27/446 , A61L27/58 , C08L67/04
摘要： Provided are fibrous composites prepared by methods of the present invention, comprising oxides and biodegradable polymers, in which the fibers are made of aerogel-like oxide materials having nanometer-sized pores. The fibrous composition advantageously has, at least, the following characteristics: (i) a very high nanoporous surface area, which also permits nucleation of crystallites; (ii) mesoporous/macroporous interspacial networks between the fibers, providing high bioactivity and a high transport rate; (iii) macropores for natural one-like tissue growth; (iv) good mechanical properties for handling and for implant support; and (v) biodegradability for implant dissolution and time-variable mechanical properties. Further provided are methods for using the bioactive biodegradable fibrous composites as osteogenic composite materials for tissue engineering, tissue re-growth, bone implants, and bone repair, and/or for the delivery of drugs or therapeutic compounds.
摘要翻译：提供了通过本发明的方法制备的纤维复合材料，其包括氧化物和可生物降解的聚合物，其中纤维由具有纳米尺寸孔的气凝胶状氧化物材料制成。纤维组合物有利地至少具有以下特征：（i）非常高的纳米孔表面积，其也允许微晶成核; （ii）纤维之间的介孔/大孔间隙网络，提供高生物活性和高传输速率; （iii）用于天然单样组织生长的大孔; （iv）用于处理和植入支持的良好的机械性能; 和（v）植入物溶解和时变机械性能的生物降解性。还提供了使用生物活性生物可降解纤维复合材料作为用于组织工程，组织再生长，骨植入物和骨修复，和/或递送药物或治疗化合物的成骨复合材料的方法。

82. 发明授权

US06723734B2 Salt of naphthyridine carboxylic acid derivative 有权
公开(公告)号：US06723734B2
公开(公告)日：2004-04-20
申请号：US10223850
申请日：2002-08-20
申请人： Ae Ri Kim , Jin Hwa Lee , Ki Sook Park , Jong Ryoo Choi , Tae Hee Lee , Jay Hyok Chang , Do Hyun Nam , Hoon Choi
发明人： Ae Ri Kim , Jin Hwa Lee , Ki Sook Park , Jong Ryoo Choi , Tae Hee Lee , Jay Hyok Chang , Do Hyun Nam , Hoon Choi
IPC分类号： A61K3144
CPC分类号： C07D471/04
摘要： 7-(3-Aminomethyl-4-methoxyiminopyrrolidin-1-yl)-1-cyclopropyl-6-fluoro-4-oxo-1,4-dihydro-1,8-naphthyridine-3-carboxylic acid methanesulfonate and hydrates thereof, processes for their preparation, pharmaceutical compositions comprising them, and their use in antibacterial therapy.

83. 发明授权

US5793074A Metal oxide semiconductor capacitors having uniform C-V characteristics over an operating range and reduced susceptibility to insulator breakdown 失效
标题翻译：金属氧化物半导体电容器在工作范围内具有均匀的C-V特性，并降低对绝缘体击穿的敏感性
公开(公告)号：US5793074A
公开(公告)日：1998-08-11
申请号：US684464
申请日：1996-07-19
申请人： Hoon Choi , Seung-Cheol Oh
发明人： Hoon Choi , Seung-Cheol Oh
IPC分类号： H01L27/04 , H01L21/822 , H01L29/94 , H01L27/108
CPC分类号： H01L29/94
摘要： A MOS capacitor has uniform C-V capacitance characteristics across an operating voltage range and has reduced susceptibility to insulator breakdown and includes a semiconductor substrate of first conductivity type, a region of insulating material on an upper surface of the substrate and a well region of second conductivity type extending adjacent the region of insulating material. The well region is spaced from the region of insulating material so that the substrate extends to the upper surface therebetween. A source region of second conductivity type is formed in the well region. An insulating layer is formed on the source region and extends over the region of insulating material. A first electrode is formed on the insulating layer and a second electrode is formed on the source region. The capacitor also includes a P-N junction established between the source region of second conductivity type and the region of insulating material beneath the insulating layer. This P-N junction provides the capacitor with substantially uniform capacitance characteristics when a voltage is applied between the first electrode and the second electrode. Furthermore, because some of the voltage differential is established across the P-N junction during operation, the electric field at the corner of the region of insulating material and the insulating layer is reduced.
摘要翻译： MOS电容器在工作电压范围内具有均匀的CV电容特性，并且降低了对绝缘体击穿的敏感性，并且包括第一导电类型的半导体衬底，衬底上表面上的绝缘材料区域和第二导电类型的阱区在绝缘材料的区域附近延伸。阱区域与绝缘材料的区域隔开，使得衬底延伸到它们之间的上表面。在阱区中形成第二导电类型的源区。绝缘层形成在源极区域上并在绝缘材料的区域上延伸。第一电极形成在绝缘层上，第二电极形成在源极区上。电容器还包括在第二导电类型的源极区域和绝缘层下方的绝缘材料区域之间建立的P-N结。当在第一电极和第二电极之间施加电压时，该P-N结为电容器提供基本均匀的电容特性。此外，由于在工作期间跨越P-N结建立了一些电压差，所以绝缘材料区域和绝缘层的拐角处的电场减小。

84. 发明授权

US5754075A Integrated circuits including power supply boosters and methods of operating same 失效
标题翻译：集成电路，包括电源增压器和操作方法
公开(公告)号：US5754075A
公开(公告)日：1998-05-19
申请号：US649427
申请日：1996-05-16
申请人： Seung-Cheol Oh , Hoon Choi
发明人： Seung-Cheol Oh , Hoon Choi
IPC分类号： G11C11/407 , G11C5/14 , G11C8/08 , G05F1/10
CPC分类号： G11C5/145 , G11C8/08
摘要： An integrated circuit provides a power supply voltage, a first boosted voltage, and a second boosted voltage which is preferably equal to or greater than the first boosted voltage, to the integrated circuit transistors, such that the integrated circuit transistors operate using the power supply voltage, the first boosted voltage and the second boosted voltage. The integrated circuit includes a first boosting circuit which boosts the power supply voltage to a first boosted voltage and a second boosting circuit which boosts the power supply voltage to a second boosted voltage. The first boosting circuit is preferably responsive to application of the power supply voltage to the integrated circuit and the second boosting circuit is preferably responsive to application of the power supply voltage to the integrated circuit and to an enable signal. Preferably, the first boosting circuit applies the first boosted voltage to the bulk region of selected PMOS transistors in the integrated circuit and the second boosting circuit applies the second boosting voltage to the source regions of selected PMOS transistors. In one embodiment, the first and second boosted voltages are applied to the word line driver of an integrated circuit memory device such that the second boosted voltage is applied to the source of the word line driver PMOS transistors in response to a row address strobe signal. High speed operations are thereby provided with reduced susceptibility to bridging defect errors.
摘要翻译：集成电路向集成电路晶体管提供优选等于或大于第一升压电压的电源电压，第一升压电压和第二升压电压，使得集成电路晶体管使用电源电压，第一升压电压和第二升压电压。集成电路包括将电源电压升高到第一升压电压的第一升压电路和将电源电压升高到第二升压电压的第二升压电路。第一升压电路优选地响应于向集成电路施加电源电压，并且第二升压电路优选地响应于将电源电压施加到集成电路和使能信号。优选地，第一升压电路将第一升压电压施加到集成电路中所选择的PMOS晶体管的体区，并且第二升压电路将第二升压电压施加到所选PMOS晶体管的源极区。在一个实施例中，第一和第二升压电压被施加到集成电路存储器件的字线驱动器，使得响应于行地址选通信号将第二升压电压施加到字线驱动器PMOS晶体管的源极。因此，提供了高速度操作，降低了对桥接缺陷错误的敏感性。

85. 发明授权

US5698570A Quinoline carboxylic acid derivatives having 7-(4-amino-methyl-3-oxime)pyrrolidine substituent and processes for preparing thereof 失效
标题翻译：具有7-（4-氨基 - 甲基-3-肟）吡咯烷取代基的喹啉羧酸衍生物及其制备方法
公开(公告)号：US5698570A
公开(公告)日：1997-12-16
申请号：US791749
申请日：1997-01-30
申请人： Chang Yong Hong , Young Kwan Kim , Jay Hyok Chang , Se Ho Kim , Hoon Choi , Do Hyun Nam , Jin Hwan Kwak , Yi Na Jeong , Jeong In Oh , Mu Yong Kim
发明人： Chang Yong Hong , Young Kwan Kim , Jay Hyok Chang , Se Ho Kim , Hoon Choi , Do Hyun Nam , Jin Hwan Kwak , Yi Na Jeong , Jeong In Oh , Mu Yong Kim
IPC分类号： A61K31/435 , A61K31/47 , A61P31/04 , C07D401/04 , C07D401/14 , C07D405/14 , C07D413/14 , C07D417/14 , C07D471/04 , C07D401/02
CPC分类号： C07D401/04 , C07D401/14 , C07D405/14 , C07D417/14 , C07D471/04
摘要： The present invention relates to a novel quinolone compound having an excellent antibacterial activity. More specifically, the present invention relates to a novel quinoline(naphthyridine)carboxylic acid derivative represented by the following formula (I), which has an 4-aminomethyl-3-oximepyrrolidine substituent on 7-position of the quinolone nucleus and shows a superior antibacterial activity in contrast to the known quinolone antibactrial agents having a weak activity against gram-positive bacterial strains and also has a broad antibacterial spectrum and a highly improved pharmacokinetic property: ##STR1## wherein R, R.sub.1, R.sub.2, R.sub.3, R.sub.4 and Q are defined as described in the specification.
摘要翻译：本发明涉及具有优异抗菌活性的新型喹诺酮化合物。更具体地说，本发明涉及下述式（I）所示的喹啉（萘啶）羧酸衍生物，其在喹诺酮核的7-位具有4-氨基甲基-3-氧代吡咯烷酮取代基，显示出优异的抗菌性与已知的对革兰氏阳性细菌菌株的活性较弱的喹诺酮类抗生素相比，具有广泛的抗菌谱和高度改善的药代动力学性质：其中R，R1，R2，R3，R4和 Q如说明书所述定义。

86. 发明授权

US5682117A Half power supply voltage generating circuit in a semiconductor memory device 失效
标题翻译：半导体存储器件中的半电源电压产生电路
公开(公告)号：US5682117A
公开(公告)日：1997-10-28
申请号：US660213
申请日：1996-06-03
申请人： Hoon Choi , Moon-Gone Kim
发明人： Hoon Choi , Moon-Gone Kim
IPC分类号： G11C11/413 , G05F3/24 , G11C11/407 , G05F1/10
CPC分类号： G05F3/247
摘要： A half Vcc generating circuit generates an accurate half supply voltage with high driving power. The half Vcc generating circuit includes a bias circuit supplied with an internal supply voltage and a driving circuit supplied with an external supply voltage. The internal supply voltage is independent of and lower than the external supply voltage.
摘要翻译：一半Vcc发生电路产生具有高驱动功率的准确的半电源电压。半Vcc的生成电路包括具有内部电源电压和与外部电源电压供电的驱动电路提供的偏置电路。内部电源电压独立于和低于外部电源电压。

87. 发明授权

US08989095B2 Ban wireless communication control method using selective discovery 有权
标题翻译：禁止使用选择性发现的无线通信控制方法
公开(公告)号：US08989095B2
公开(公告)日：2015-03-24
申请号：US13700189
申请日：2011-12-21
申请人： Kyung Min Park , Eun Ji You , Hoon Choi , Chil Woo Lee
发明人： Kyung Min Park , Eun Ji You , Hoon Choi , Chil Woo Lee
IPC分类号： H04W4/00 , H04L12/24 , H04W8/00 , H04W48/16
CPC分类号： H04L41/12 , A61B5/0002 , A61B5/01 , A61B5/024 , A61B5/0402 , A61B5/6804 , H04W8/005 , H04W48/16
摘要： The present description relates to a BAN (Body Area Network) wireless communication control method, and more particularly, to a BAN wireless communication control method to which a selective discovery technique is applied. The present invention provides a BAN wireless communication control method, comprising the steps of transmitting a discovery request frame including a selective standard profile, and receiving a discovery response frame from a host that provides at least one of services specified in the selective standard profile.
摘要翻译：本说明书涉及一种BAN（身体区域网络）无线通信控制方法，更具体地说，涉及应用选择性发现技术的BAN无线通信控制方法。本发明提供了一种BAN无线通信控制方法，包括以下步骤：发送包括选择性标准简档的发现请求帧，以及从提供选择性标准简档中指定的服务中的至少一个的主机接收发现响应帧。

88. 发明授权

US08902210B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08902210B2
公开(公告)日：2014-12-02
申请号：US12852683
申请日：2010-08-09
申请人： Kyo Ho Moon , Chul Gu Lee , Hoon Choi , Yong Soo Cho , Sang Kug Han
发明人： Kyo Ho Moon , Chul Gu Lee , Hoon Choi , Yong Soo Cho , Sang Kug Han
IPC分类号： G06F3/038 , G09G5/00 , G09G3/36
CPC分类号： G09G3/3677 , G09G2320/0223 , G09G2320/0252
摘要： An LCD device includes dual gate transistors provided to an output portion of the shift register for outputting a gate voltage. As such, the charge/discharge time of the output portion is reduced so the response time of liquid crystal is improved.
摘要翻译： LCD装置包括提供给移位寄存器的输出部分的双栅极晶体管，用于输出栅极电压。因此，输出部分的充电/放电时间减少，从而提高了液晶的响应时间。

89. 发明授权

US08872551B2 Integrated circuit 有权
标题翻译：集成电路
公开(公告)号：US08872551B2
公开(公告)日：2014-10-28
申请号：US13411536
申请日：2012-03-03
申请人： Hoon Choi
发明人： Hoon Choi
IPC分类号： H03K17/00 , H03K21/40
CPC分类号： H03K5/13 , H03K5/22 , H03K21/406
摘要： An integrated circuit includes a clock control unit configured to selectively output an external clock or a delayed clock acquired by delaying the external clock as an input clock in response to a divided clock generated by dividing the external clock, when a test mode is entered; and an internal circuit operating in response to the input clock.
摘要翻译：集成电路包括：时钟控制单元，被配置为当输入测试模式时，响应于通过划分外部时钟产生的分频时钟，选择性地输出外部时钟或延迟时钟，所述延迟时钟通过将外部时钟延迟为输入时钟; 以及响应于输入时钟而工作的内部电路。

90. 发明申请

US20140187576A1 SALT OF NAPHTHYRIDINE CARBOXYLIC ACID DERIVATIVE 审中-公开
标题翻译：萘甲酸羧酸衍生物的盐
公开(公告)号：US20140187576A1
公开(公告)日：2014-07-03
申请号：US14063117
申请日：2013-10-25
申请人： Ae Ri Kim , Jin Hwa Lee , Ki Sook Park , Jong Ryoo Choi , Tae Hee Lee , Jay Hyok Chang , Do Hyun Nam , Hoon Choi
发明人： Ae Ri Kim , Jin Hwa Lee , Ki Sook Park , Jong Ryoo Choi , Tae Hee Lee , Jay Hyok Chang , Do Hyun Nam , Hoon Choi
IPC分类号： C07D471/04
CPC分类号： C07D471/04 , A61K31/4375 , C07B2200/13 , C07C309/04
摘要： 7-(3-Aminomethyl-4-methoxyiminopyrrolidin-1-yl)-1-cyclopropyl-6-fluoro-4-oxo-1,4-dihydro-1,8-naphthyridine-3-carboxylic acid methanesulfonate and hydrates thereof, processes for their preparation, pharmaceutical compositions comprising them, and their use in antibacterial therapy.
摘要翻译： 7-（3-氨基甲基-4-甲氧基亚氨基吡咯烷-1-基）-1-环丙基-6-氟-4-氧代-1,4-二氢-1,8-二氮杂萘-3-羧酸甲磺酸盐及其水合物，方法用于其制备，包含它们的药物组合物及其在抗菌治疗中的用途。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式