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81. 发明专利

JPH0730052A MODULE BOARD FOR ELECTRONIC COMPUTER 失效
公开(公告)号：JPH0730052A
公开(公告)日：1995-01-31
申请号：JP15215593
申请日：1993-06-23
申请人： HITACHI LTD
发明人： SHINOHARA KOICHI , TANAKA AKIRA , YOSHITOME HITOSHI , INOUE MASAO , OBA TAKAO
IPC分类号： H01L23/12 , H01L23/50 , H01L25/04 , H01L25/18 , H01P3/08 , H05K9/00
摘要： PURPOSE:To lessen simultaneous switching noises generated by the influences of the discontinuity of signal lines in impedance in an electronic computer and the inductance of a power supply by a method wherein the transmission volume ratio of signals to noises is set lower than a specific value. CONSTITUTION:Data transmission is executed in the signal transmission system of an electronic computer through such a manner that signal waves are outputted from an LSI driver and received by an LSI receiver. In a board constituted as above, the transmission volume of signal or noise waves is defined as the input energy of a receiver against the output energy of a driver. Provided that the transmission volume of signal waves required for data transmission is represented by A, and the transmission volume of noise waves of specific frequencies not required for data transmission is represented by B, the transmission volume ratio B/A is set smaller than 50%. By this setup, signals can be shortened in rise time, so that an electronic computer is capable of executing an operation at a higher speed.

82. 发明专利

JPH01184854A MOUNTING STRUCTURE OF HIGH THERMAL CONDUCTIVITY SEMICONDUCTOR 失效
公开(公告)号：JPH01184854A
公开(公告)日：1989-07-24
申请号：JP476188
申请日：1988-01-14
申请人： HITACHI LTD
发明人： INOUE KOICHI , KURIHARA YASUTOSHI , OKADA NOBUSUKE , TANAKA AKIRA , TAKAHASHI MASAAKI
IPC分类号： H01L23/40 , H01L23/36
摘要： PURPOSE:To keep the thermal resistance of a semiconductor device small, by keeping always the thickness of a resin layer of the lower side of a semiconductor chip sufficiently small, and making the thickness of the resin layer except the lower side of the semiconductor chip comparatively large. CONSTITUTION:Silicon semiconductor chips 1 are arranged in a line on a dielectric substrate 6 of high thermal conductivity, via eutectic solder 5. Protrusions 10 are formed on the surface of the substrate 6 under the semiconductor chips 1 where the semiconductor chips 1 are not attached. The substrate 6 is bonded to a package case 2 constituted of aluminum alloy, via silicon system organic adhesive agent 7. Although air bubbles 15 exist in the organic adhesive agent 7, they are trapped in a part of the thick adhesion layer whose thickness is kept 100mum or more, and do not exist in the thin adhesion layer whose thickness is kept 30mum or less by the protrusions 10. As a result, the thermal resistance of a semiconductor device can be remarkably improved.

83. 发明专利

JPS6430150A ROTARY ANODE TARGET FOR W-RAY TUBE 失效
公开(公告)号：JPS6430150A
公开(公告)日：1989-02-01
申请号：JP18526787
申请日：1987-07-24
申请人： HITACHI LTD , HITACHI MEDICAL CORP
发明人： TANAKA AKIRA , SHIMADA SATOSHI , YAMADA KAZUJI , NAKAGAWA YUSAKU , NISHIHARA MOTOHISA , MITSUYOSHI TADAHIKO , BABA NOBORU , KAGOHARA HIROMI , INAMURA ICHIRO
IPC分类号： H01J35/10
摘要： PURPOSE:To realize high-speed rotation by adding a mass part to an outer circumferential part and making thickness of the outer circumferential part larger than that of an innermost circumferential part and positioning a maximum thickness of the outer circumferential part on the inner circumferential part more inwardly than on an inclined part. CONSTITUTION:An inclined part is disposed on a circumferential part of one side of a rotary disc which is made of a heat conductive material 1 with a via hole in its central part for insertion of a rotary axis 3. A maximum thickness of the rotary disc ranging from the inclined part to an inner circumferential side and an outer circumferential side is made larger than that of an innermost circumferential part. The maximum thickness is positioned on the inner circumferential side of the inclined part or more inwardly than on this side. An average thickness of the inclined part of the rotary disc is made larger than that of the via hole part 4, and the rotary disc is formed so in a shape that distortion of the rotary disc caused by a difference in temperature between front and rear sides of the rotary disc during generation of X rays is canceled by deformation of the rotary disc caused by centrifugal force of rotation. A ratio of the disc thickness on the via hole part 4 to the average disc thickness on the inclined part is made in the range of (1.2-1.6) to 1. Hence a large- diameter disc can be formed with high-speed rotation realized.

84. 发明专利

JPS62178331A COMPOSITE STRUCTURE OF CERAMICS AND METAL 失效
公开(公告)号：JPS62178331A
公开(公告)日：1987-08-05
申请号：JP2012686
申请日：1986-02-03
申请人： HITACHI LTD
发明人： TANAKA AKIRA , MIYOSHI TADAHIKO
IPC分类号： C04B35/00 , B32B15/04

85. 发明专利

JPS62132758A HIGH HEAT EXPANSION CERAMICS 失效
公开(公告)号：JPS62132758A
公开(公告)日：1987-06-16
申请号：JP27326285
申请日：1985-12-06
申请人： HITACHI LTD
发明人： TANAKA AKIRA , MIYOSHI TADAHIKO
IPC分类号： C04B35/553 , C04B35/00 , C04B35/10 , C04B35/46 , C04B35/48

86. 发明专利

JP2002312697A METHOD AND DEVICE FOR MANAGING RENTAL USE OF INDEPENDENT POWER GENERATING FACILITY 失效
公开(公告)号：JP2002312697A
公开(公告)日：2002-10-25
申请号：JP2001115437
申请日：2001-04-13
申请人： HITACHI LTD , HITACHI ENG SERVICE , HITACHI CAPITAL CORP
发明人： TANAKA AKIRA , EBISAWA TORU , HONDA KOKICHI , FUJIMURA TAKASHI , HIROSE MITSUNORI , OGIWARA AKIRA
IPC分类号： G06Q30/04 , G06Q30/06 , G06Q50/00 , G06Q50/06 , H02J3/46 , G06F17/60
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for the rental use of independent power generating facilities which enable a customer to easily introduce the independent power generating facilities by which the customer can expect cost reduction without any hesitation. SOLUTION: A maker 40 manages the bought electric energy that the customer 1 uses for a predetermined period and the electric energy generated by the rented independent power generating facilities 20. The difference amount between the electric power charge for the bought electric energy before the independent power generating facilities 20 are rented and the operation charge of the independent power generating facilities 20 after the facilities 20 are rented is found and according to the difference amount, the charge for the use of the independent power generating facilities 20 is paid according to the contents of a contract that the customer 1 and maker 40 makes.

87. 发明专利

JP2001135788A SEMICONDUCTOR MODULE AND INVERTER DEVICE USING THE SAME 失效
公开(公告)号：JP2001135788A
公开(公告)日：2001-05-18
申请号：JP31333199
申请日：1999-11-04
申请人： HITACHI LTD
发明人： TANAKA AKIRA , SAITO RYUICHI , KUSHIMA TADAO , KOIKE YOSHIHIKO , SHIMIZU HIDEO , NONOYAMA SHIGEHARU
IPC分类号： H01L23/48 , H01L25/07 , H01L25/18 , H02M7/48
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor module of which mechanical reliability and electrical reliability are improved. SOLUTION: The height of an auxiliary terminal is made at least 80% of module height, and the difference in height between the two is made at least 5 mm. Thereby, mechanical rigidity and insulation property of a semiconductor module are improved.

88. 发明专利

JPH1167977A RESIN-SEALED POWER MODULE DEVICE, AND MANUFACTURE THEREFOR 失效
公开(公告)号：JPH1167977A
公开(公告)日：1999-03-09
申请号：JP22774597
申请日：1997-08-25
申请人： HITACHI LTD
发明人： SUZUKI KAZUHIRO , SUZUKI HIROSHI , MORISHIMA SHIN , SAITO RYUICHI , KUSHIMA TADAO , TANAKA AKIRA , TERASAKI TAKESHI , SAITO TAKASHI
IPC分类号： H01L23/28 , H01L23/24
摘要： PROBLEM TO BE SOLVED: To provide module device superior in various reliabilities such as insulating characteristic and moisture-resistance. SOLUTION: In a resin-sealed power module device in which a plurality of power semiconductor elements 1 are mounted, an enclosure case 6 is attached on a substrate 3 comprising an external connection terminal 5 for electrical connection of the semiconductor element with the outside, sealing of the semiconductor element is performed with such curing substance as silicone resin whose range of penetration (JIS K-2220, 1/4 cone) is >=20 and

89. 发明专利

JPH1084077A SEMICONDUCTOR MODULE AND INVERTER DEVICE USING IT 失效
公开(公告)号：JPH1084077A
公开(公告)日：1998-03-31
申请号：JP23616696
申请日：1996-09-06
申请人： HITACHI LTD , HITACHI KYOWA ENG KK
发明人： TANAKA AKIRA , INOUE KOICHI , KUSHIMA TADAO , KOIKE YOSHIHIKO , SHIMIZU HIDEO , SAITO RYUICHI , SUZUKI KAZUHIRO , KURIHARA YASUTOSHI , OKADA NOBUSUKE , KOIZUMI MASAHIRO , KAJIWARA RYOICHI , SONOBE YUKIO , NAKATSU KINYA , KURIBAYASHI SHIGEHISA
IPC分类号： H01L25/07 , H01L25/18
摘要： PROBLEM TO BE SOLVED: To enable semiconductor devices to be set substantially uniform in intensity of currents which flow through them and stable in electrical characteristics by a method wherein the semiconductor devices are mounted centering around the joint of the outer connection terminals of a wiring circuit where no semiconductor device is mounted so as to be located substantially equal in distance from the above joint. SOLUTION: The joint 7 of emitter wiring pattern terminals is arranged at the center of an emitter wiring pattern located at the center of an insulating board 13. An IGBT semiconductor device 2 and a diode semiconductor device 1 are arranged on an arc around the center of the joint 7. Distances 24 and 25 from the center of the joint 7 to the centers of the nearest and farthest semiconductor device each range within ±20% from the average distance up to a semiconductor device. By this setup, a distance from the electrodes of the IGBT semiconductor device 2 and the diode semiconductor device 1 to the pattern terminal joint 7 can be reduced to a minimum, and distances from the joint 7 to the electrodes can be substantially equalized.

90. 发明专利

JPH1074886A SEMICONDUCTOR MODULE 失效
公开(公告)号：JPH1074886A
公开(公告)日：1998-03-17
申请号：JP22969896
申请日：1996-08-30
申请人： HITACHI LTD
发明人： NAKATSU KINYA , MIYAZAKI HIDEKI , INOUE KOICHI , TANAKA AKIRA , KOIKE YOSHIHIKO , TANBA AKIHIRO , OGAWA TOSHIO , TAKAHASHI MASAAKI , SUZUKI KATSUNORI , SASAKI MASAKI
IPC分类号： H05K9/00 , H01L21/822 , H01L25/04 , H01L25/07 , H01L25/18 , H01L27/04 , H02M1/00 , H02M7/04
摘要： PROBLEM TO BE SOLVED: To lessen a semiconductor module in inductance so as to reduce noises by a method, wherein the main positive and negative electrodes and positive and negative control electrodes of the semiconductor devices for each device group are connected together in parallel with copper foil wirings, and the wirings are so connected as to connect the main positive and negative electrodes and positive and negative control electrodes of the semiconductor devices of each device group in series. SOLUTION: A wire bonding pad 11 which connects foil conductor patterns 5, 6 and 7 and other foil conductor patterns 5, 6 and 7 formed on another insulating ceramic board is arranged on both the ends of the foil conductor patterns 5, 6, and 7 respectively. Aluminum wires 21 are wire-bonded, so as to connect the foil conductor patterns 5, 6, and 7 in series, and outer connecting terminals for an outer circuit and the conductor patterns 5, 6, and 9 are connected together at a pointy. A positive connecting point and a negative connecting point where the same current flows in the opposite directions are provided adjacent to each other. By this setup, an eddy current flows through a metal board 3, and the foil conductor patterns 5, 6, and 7 and aluminum wires 8 and 212 can be lessened in inductance by the above eddy current.

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