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81. 发明专利

JPS5372550A MICROWAVE LEADDIN FLANGE 失效
公开(公告)号：JPS5372550A
公开(公告)日：1978-06-28
申请号：JP14779476
申请日：1976-12-10
申请人： HITACHI LTD
发明人： KOIKE HIDEKI , SAKUMICHI KUNIYUKI , TOKIKUCHI KATSUMI , SHIKAMATA ICHIROU
IPC分类号： H01P1/04 , H01J23/36 , H01J23/40
摘要： PURPOSE:To enhance the propagation efficiency of the microwave ion source for the ion injecting machine, by improving the impedance matching for the microwave propagation line.

82. 发明专利

JPS52147074A ION IMPLANTATION APPARATUS 失效
公开(公告)号：JPS52147074A
公开(公告)日：1977-12-07
申请号：JP6361676
申请日：1976-06-02
申请人： HITACHI LTD
发明人： TOKIKUCHI KATSUMI , SAKUMICHI KUNIYUKI , KOIKE HIDEKI , KAMATA ICHIROU
IPC分类号： H01J37/317 , B23K15/00 , H01J37/30 , H01L21/027 , H01L21/265
摘要： PURPOSE:To reduce the divergence of ion beam fluxes at the time of positive charge ion implantation of large current and perform ion implantation of less loss in current quantity by newly adding a negative ion source.

83. 发明专利

JPS5254898A SPATTERING ION SOURCE OF MICROWAVE 失效
公开(公告)号：JPS5254898A
公开(公告)日：1977-05-04
申请号：JP12921975
申请日：1975-10-29
申请人： HITACHI LTD
发明人： TOKIKUCHI KATSUMI , SAKUMICHI KUNIYUKI , KOIKE HIDEKI , KAMATA ICHIROU
IPC分类号： H01J37/08 , H01J3/04 , H01J27/00 , H01J27/16 , H01J49/12 , H05H7/08
摘要： PURPOSE:To draw out a high purity metallic ion beam by means of making a spattered metallic element to plasma by constituting the microwave-plasma binding element and the structural materials of plasma source chamber with a metal to be objected.

84. 发明专利

JPH07302576A ION IMPLANTING METHOD 失效
公开(公告)号：JPH07302576A
公开(公告)日：1995-11-14
申请号：JP9652995
申请日：1995-04-21
申请人： HITACHI LTD
发明人： TOKIKUCHI KATSUMI , SAKUMICHI KUNIYUKI , OKADA OSAMI , KOIKE HIDEMI , SAITO NORIO , OZASA SUSUMU
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
摘要： PURPOSE:To provide an ion implanting method capable of implanting high energy ion beams in a sample substrate at a light power source load. CONSTITUTION:Heavy current ion beams from an ion source 1 are mass- separated with a mass separator 2 to select only an objective ion species, and ions mass-separated with the mass separator 2 are accelerated to several hundreds keV to several MeV with a high frequency quadrupole accelerator 10 arranged in the subsequent stage of the mass separator 2. The accelerated ions are implanted in a sample substrate 6 in an implanting chamber 5.

85. 发明专利

JPH06318559A MANUFACTURE OF SEMICONDUCTOR DEVICE BY HIGH ENERGY ION IMPLANTATION 失效
公开(公告)号：JPH06318559A
公开(公告)日：1994-11-15
申请号：JP10656093
申请日：1993-05-07
申请人： HITACHI LTD
发明人： TOKIKUCHI KATSUMI , SAKUMICHI KUNIYUKI , AMAMIYA KENSUKE , ITO JUNYA
IPC分类号： H01J37/317 , H01L21/265
摘要： PURPOSE:To reduce residual secondary defects after heat treatment of a semiconductor device which has ions implanted at a specified amount or above by making a region from the surface of a silicon substrate to the impurity ion implanted depth amorphous and then by heat-treating the silicon substrate. CONSTITUTION:BF3 gas is led in into an ion source 6 to generate plasma. The ion beam output from a mass separator 7 is led to a lens 8, where the shape of the ion beam is controlled. The ion beam which has passed through the lens 8 is suddenly accelerated to an MeV level by a variable frequency high-frequency quadrupole (RFQ) accelerator 9 and then is led to an ion implantation chamber 10, where ions are implanted. A disc on which a silicon wafer is mounted is turned at a high speed and is mechanically moved back and forth in the radial direction at the same time to the MeV-level ion beam which is cast on one point. By this, ions are implanted uniformly and a layer upto the silicon substrate is made amourphous. In order to make the layer amorphous, ions are implanted in the order of 10 to 10 /cm .

86. 发明专利

JPH0676994A HIGH FREQUENCY QUADRUPOLE ACCELERATOR 失效
公开(公告)号：JPH0676994A
公开(公告)日：1994-03-18
申请号：JP22658992
申请日：1992-08-26
申请人： HITACHI LTD
发明人： HAKAMATA YOSHIMI , TOKIKUCHI KATSUMI , AMAMIYA KENSUKE , SAKUMICHI KUNIYUKI
IPC分类号： H01P7/06 , H05H7/02 , H05H9/00
摘要： PURPOSE:To enable a plurality of contacts to be operated through the smooth shift thereof by providing a movable conductor and contact at the end of a movable shortcircuit conductor in such a way as in slidable contact with each other in a vacuum vessel, and applying sufficient contact pressure the movable conductor and contact during power supply, and causing the separation and release thereof from each other during the motion. CONSTITUTION:For changing the inductance of an resonance circuit in a vacuum vessel 1, the contacts 15 and 16 of a movable shortcircuit conductor means 11 are separated from bar type conductors 9 and 10, and moved with a shift operation mechanism 19. Then, the contacts 15 and 16 are again caused to come in contact with the conductors 8 and 10 after determining the position of the means 11. In order to cause the conductors 9 and 10 to come in contact with or part from the contacts 15 and 16, movable conductors 13 and 14, operation means 17 and 18, and toggle mechanisms 20 to 22 are provided between the center section 12 of the means 11, and the contacts 15 and 16. Then, the means 17 and 18 are pushed in an A-direction, or pulled in a reverse direction, thereby causing the contacts 15 and 16 to come in contact or part from the conductors 9 and 10. According to this construction, a plurality of the means 11 can be concurrently operated.

87. 发明专利

JPH0636696A MICROWAVE ION SOURCE 失效
公开(公告)号：JPH0636696A
公开(公告)日：1994-02-10
申请号：JP18654192
申请日：1992-07-14
申请人： HITACHI LTD
发明人： SEKI TAKAYOSHI , SAKUMICHI KUNIYUKI
IPC分类号： C23C14/48 , H01J27/18 , H01J37/08 , H01J37/317 , H01L21/265
摘要： PURPOSE:To improve an ion generation rate of a microwave ion source in plasma. CONSTITUTION:Plasma is generated by microwave discharge in magnetic field and an ion beam is drawn out of the plasma by using drawing electrodes 8a and 9. In such type of microwave ion source, a plurality of electrode 23a and 23b made of electrical conductive material are inserted in a discharge box 7 of microwave ion source made of insulating material and DC or AC voltage is applied across the electrodes 23a and 23b.

88. 发明专利

JPH0529242A ION IMPLANTATION METHOD AND DEVICE 失效
公开(公告)号：JPH0529242A
公开(公告)日：1993-02-05
申请号：JP17966991
申请日：1991-07-19
申请人： HITACHI LTD
发明人： TOKIKUCHI KATSUMI , AMAMIYA KENSUKE , HAKAMATA YOSHIMI , SAKUMICHI KUNIYUKI
IPC分类号： H01J37/317 , H01L21/265 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To form a high concentration impurity implanted layer from the near surface region to the deep region individually by a high energy ion implantation device by a method wherein the ion implantation step is performed while changing the film thickness of a thin film previously formed on an implanted substrate surface. CONSTITUTION:A metallic thin film is formed on the surface of an implanted substrate 5. This substrate 5 is implanted with boron ions in about 1MeV accelerated by a high-frequency quadruple polarity accelerator 3. Next, the surface of the substrate 5 is irradiated with inert gas ion beams 13 in several KeV from a sputter ion source 7 arranged as a thin film removing device so as to slowly diminish the thickness of a metallic thin film simultaneously with the ion implantation step. At this time, the impurity ion concentration can be maximized at near surface region by making the film thickness of the metallic thin film approach to the mean projection range. Accordingly, an arbitrary distribution of the impurity concentration can be formed from the near surface shallow region to the deep region by slowly diminishing the thin film thickness.

89. 发明专利

JPH04365852A ION BEAM MIXING METHOD AND DEVICE 失效
公开(公告)号：JPH04365852A
公开(公告)日：1992-12-17
申请号：JP14038991
申请日：1991-06-12
申请人： HITACHI LTD
发明人： MATSUO HISAHIDE , SAKUMICHI KUNIYUKI , SEKI TAKAYOSHI
IPC分类号： C23C14/32 , C23C14/22 , C23C14/24 , C23C14/48
摘要： PURPOSE:To form a homogeneous mixing film having good adhesion to a work in ion beam mixing. CONSTITUTION:Vapor 6 for vapor deposition and bumping particles 7 generated from a sample 5 in a crucible 4 are brought into collision against a vapor reflecting means 11 to reflect or reevaporate the bumping particles 7 sticking thereto. The surface of the work 3 can be irradiated with only the vapor 6 in this way. The vapor reflecting means 11 is so installed that the progressing direction of the vapor 6 for vapor deposition after the reflection aligns approximately to the irradiation direction of the ion beam 8. The adhesion of the bumping particles to the surface of the work is prevented in this way and further the irradiation direction of the ion beam and the vapor deposition direction can be approximately aligned and, therefore, the homogeneous mixing film can be formed with the good adhesion even onto the surface of the intricately shaped object having ruggedness.

90. 发明专利

JPH03245500A QUADRUPOLE PARTICLE ACCELERATION DEVICE 失效
公开(公告)号：JPH03245500A
公开(公告)日：1991-11-01
申请号：JP3823090
申请日：1990-02-21
申请人： HITACHI LTD
发明人： AMAMIYA KENSUKE , TOKIKUCHI KATSUMI , HAKAMATA YOSHIMI , SAKUMICHI KUNIYUKI
IPC分类号： H05H9/00
摘要： PURPOSE:To maximize the incident ion beam current to an RFQ even in case of accelerating various sorts of ion, by making it possible to regulate quadrupole electrodes in a desired DC potential. CONSTITUTION:Quadrupole electrodes 1, 2, 3, and 4 are insulated from an acceleration tube 5 through an insulator 6. On the outside of the acceleration tube 5, a resonance circuit which consists of a variable capacitor 7 and a secondary coil 8 is provided. This resonance circuit is connected to a DC variable power source 13 through a choke coil 12, and made to allow to set the whole DC potential of the quadrupole electrodes 1, 2, 3, and 4 at a desired value. The output of an oscillator 11 is fed to the resonance circuit through a primary coil 9 after it is amplified by an amplifier 10. As a result, even though the sort of ion is changed, the DC potential responding to the sort of ion can be set. Consequently, the drawingout voltage of the ion source can be maintained optimum constantly, and the maximum ion beam current can be obtained constantly.

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