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81. 发明专利

JPS59167937A Manufacturing method of target for image pickup tube 失效
标题翻译：图像抽吸管目标的制造方法
公开(公告)号：JPS59167937A
公开(公告)日：1984-09-21
申请号：JP4203384
申请日：1984-03-07
申请人： Hitachi Ltd
发明人： IMAMURA YOSHINORI , SASANO AKIRA , ADAKA SABUROU , TSUKADA TOSHIHISA , MARUYAMA EIICHI
IPC分类号： H01J9/233
CPC分类号： H01J9/233
摘要： PURPOSE:To obtain a target which is formed with its porous coat not affected by heat processing and organic cleaning by forming a chalcogenide glass coat after bonding a substrate provided with a transparent conductive coat and a photoconductive coat to a substrate used for a filter. CONSTITUTION:A second substrate 24 is fixed to the side of the photoconductive layer 23 of a first substrate 21 on which a transparent conductive layer 22 and the photoconductive layer are sequentially formed, by means of a bonding agent 30 such as paraffin. Then, the substrate 21 is optically abraded up to the specified thickness using the substrate 24 as a holding stand and is fixed to a third transparent glass substrate 25 on which a stripe filter 26 is formed, by means of a transparent bonding agent 27. Subsequently, after the substrate 24 fixed by means of paraffin 30 is heated up to 60-80 deg.C so as to remove paraffin, it is cleaned by an organic solvent. After that, a target frame body for a single tube color image pickup tube is completed by forming a porous coat 28 made of chalcogenide glass at 150 deg.C or less using the vacuum evaporation method in gaseous environment.
摘要翻译：目的：通过在将具有透明导电涂层和光电导层的基板与用于过滤器的基板接合之后，通过形成硫族化物玻璃涂层，获得其多孔涂层形成的不受热处理和有机清洁影响的目标。构成：第二基板24通过诸如石蜡的粘合剂30固定到第一基板21的光导电层23的侧面上，在第一基板21上依次形成透明导电层22和光电导层。然后，使用基板24作为保持台将基板21光学研磨至规定厚度，并通过透明粘合剂27固定到形成有条形过滤器26的第三透明玻璃基板25上。随后在将通过石蜡30固定的基板24加热至60-80℃以除去石蜡之后，用有机溶剂清洗。之后，通过在气态环境下使用真空蒸发法，在150摄氏度以下的硫属玻璃制成多孔涂层28，完成单管彩色图像拾取管的目标框体。

82. 发明专利

JPS59112662A Image pickup device 失效
标题翻译：图像拾取器件
公开(公告)号：JPS59112662A
公开(公告)日：1984-06-29
申请号：JP21618583
申请日：1983-11-18
申请人： Hitachi Ltd
发明人： MARUYAMA EIICHI , IMAMURA YOSHINORI , ADAKA SABUROU , INAO KIYOHISA , TAKASAKI YUKIO , TSUKADA TOSHIHISA , HIRAI TADAAKI
IPC分类号： H01J29/45 , H01L31/0264 , H01L31/0392 , H01L31/09 , H04N5/335 , H04N5/361 , H04N5/369
CPC分类号： H01L31/03921 , H01L31/095 , Y02E10/50
摘要： PURPOSE:To obtain a preferable image pickup device by utilizing the fact that a thin amorphous film containing Si and H has less trap which facilitates to obtain a specific resistance of 10 OMEGAcm or higher and disturbs a light transfer carrier. CONSTITUTION:A transparent electrode 2 and an N type CeO2 film 9 are superposed on a glass plate 1. Then, a substrain is maintained at 100-200 deg.C in H2+ Ar, a reactive sputtering is performed with B-added Si as a target, and a photoconductive film of P type amorphous Si having 100nm-20mum of thickness is superposed. H2 partial pressure of pressure 2X10 -1X10 Torr is altered by 0-100% during discharging to set the H density in the film 3. The amorphous film which has optimum specific resistance of 10 OMEGAcm or higher and less trap density for an image sensor of storage mode is obtained when the film contains 10-50 atomic % of H, and 50 atomic % or higher of contained Si, and the image sensor which has fast responding speed, low dark current, no long residual image, no seizing phenomenon and high resolution can be obtained.
摘要翻译：目的：为了获得优选的图像拾取装置，通过利用含有Si和H的薄的非晶膜具有较少的陷阱，有助于获得10 10欧米汞厘米或更高的电阻率并干扰光转移载体的事实。构成：将透明电极2和N型CeO 2膜9重叠在玻璃板1上。然后，在H 2 + Ar中，将子衬底保持在100〜200℃，用B添加的Si作为反应性溅射靶和具有100nm-20μm厚度的P型非晶Si的光导膜叠加。 H2的压力分压为2×10 -3 -1×10 -1乇在放电期间改变0-100％以设定膜3中的H密度。具有最佳电阻率为10 10欧姆·厘米的非晶膜当膜含有10-50原子％的H和50原子％或更高的含有Si的图像传感器和具有快速响应速度，低暗电流的图像传感器时，获得用于存储模式的图像传感器的更高和更低的陷阱密度无残留图像，无卡死现象，高分辨率。

83. 发明专利

JPS58140781A IMAGE DISPLAY 失效
公开(公告)号：JPS58140781A
公开(公告)日：1983-08-20
申请号：JP2274482
申请日：1982-02-17
申请人： HITACHI LTD
发明人： MATSUI MAKOTO , OOWADA JIYUNICHI , SHIRAKI YASUHIRO , MARUYAMA EIICHI
IPC分类号： G02F1/133 , G02F1/1335 , G02F1/136 , G02F1/1368 , G09F9/30 , H01L23/48

84. 发明专利

JPS58131646A UNITUBE COLOR CAMERA TUBE 失效
公开(公告)号：JPS58131646A
公开(公告)日：1983-08-05
申请号：JP721883
申请日：1983-01-21
申请人： HITACHI LTD
发明人： ADAKA SABUROU , MARUYAMA EIICHI , IMAMURA YOSHINORI , INAO KIYOHISA , TSUKADA TOSHIHISA , TAKASAKI YUKIO , HIRAI TADAAKI
IPC分类号： H01J29/44 , H01J29/45 , H01J31/46 , H01L31/08
摘要： PURPOSE:To realize high sensitivity and obtain high resolution, by connecting an electron impulse target to an image intensifier having a stripe filter. CONSTITUTION:Light 8 from the outside passes through a stripe filter 5 and is resolved into light corresponding to a signal of R, B, W. If this resolved light is irradiated to a photo electric surface 6 closely provided on the filter, a photoelectron corresponding to each color is generated on the photoelectric surface. The photoelectron is accelerated by acceleration voltage applied to the surface 6 and anode 4. The accelerated electron is focused by focusing electrode 1 and allowed to collide against an electron impulse target 2 used with amorphous silicon. A hole generated by an impulsive electron is injected to an amorphous silicon film to form a distributive charge on this film. If a pitch of the stripe filter is suitably formed, the signal of light R, B, W can be obtained in a fixed frequency by scanning of an electron beam.

85. 发明专利

JPS58112363A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58112363A
公开(公告)日：1983-07-04
申请号：JP22612282
申请日：1982-12-24
申请人： HITACHI LTD
发明人： MATSUI MAKOTO , SHIRAKI YASUHIRO , KATAYAMA YOSHIFUMI , TSUKADA TOSHIHISA , MARUYAMA EIICHI
IPC分类号： H01L21/203 , H01L27/14 , H01L27/146
摘要： PURPOSE:To obtain a semiconductor device wherefrom an active element array, with excellent and stable operational characteristic and a large area and length can be obtained and which allows the light incidence from the element side and substrate side according to necessity, by forming a polycrystalline Si film at a substrate temperature within the range of operational temperatures on a glass substrate or a ceramic substrate, etc. CONSTITUTION:Window opening of source and drain regions is performed on an SiO2 film 3, BF2 ions of the energy 150KeV are implanted at a dosage of 3X10 /cm and heat-treated at 550 deg.C for 100min, and thereby P layers 4 are formed on source and drain regions. Next, the SiO2 film is removed by leaving a field oxide film 5, and again an SiO2 film 6 is adhered into the thickness of 2,000Angstrom for a gate oxide film by a vapor growing method. Further, after opening electrode contact holes by a photoetching process and evaporating Al over the entire surface, the Al is processed resulting in the formation of a source electrode 7, a drain electrode 8, and a gate electrode 9. Thereafter, a heat treatment at 400 deg.C for 30min is performed in H2 atmosphere.

86. 发明专利

JPS5822899B2 失效
公开(公告)号：JPS5822899B2
公开(公告)日：1983-05-12
申请号：JP10006078
申请日：1978-08-18
申请人： HITACHI LTD
发明人： TSUKADA TOSHIHISA , MARUYAMA EIICHI , UMAJI TOORU , ADAKA SABURO , IMAMURA YOSHINORI , SASANO AKIRA , KUBO SEIJI , KOIKE NORIO , NAGAHARA SHUSAKU
IPC分类号： H01L27/146 , H01L31/00 , H04N5/30 , H04N5/335 , H04N5/359 , H04N5/369 , H04N5/372 , H04N5/374

87. 发明专利

JPS5814581A THIN FILM SEMICONDUCTOR SOLAR CELL 失效
公开(公告)号：JPS5814581A
公开(公告)日：1983-01-27
申请号：JP11213981
申请日：1981-07-20
申请人： HITACHI LTD
发明人： MURAYAMA YOSHIMASA , KATAYAMA YOSHIFUMI , MARUYAMA EIICHI
IPC分类号： H01L31/04 , H01L31/06 , H01L31/075 , H01L31/077
摘要： PURPOSE:To obtain a thin film semiconductor solar cell with excellent photoelectric converting efficiency having the quantum efficiency of 10% or above by a method wherein an amorphous semiconductor thin film, consisting of Si containing H2 of 100-3,000Angstrom in film thickness, is intervened between a transparent electrode film and a polycrystalline Si thin film layer. CONSTITUTION:The oxide of an alloy of In and Sn or an extremely thin semitransparent metal film 22, which will become one of electrodes, is deposited on a transparent glass substrate 21, and a P type or N type amorphous Si layer 23 of high impurity density containing H2 is deposited on said film 22. In addition, a same conductive type polycrystalline Si thin film 24, an i-type polycrystalline Si thin film 25 and an N type or P type doped polycrystalline Si thin film 26 are grown, the rays of the sun is insidented on the side of the substrate 21, the rays are absorbed by the i layer 25, and a number of pairs of electron and hole are generated. Through these procedures, the above is diffused on the metal film 22 and the electrode 27 which was deposited on the surface, and the desired voltage V is obtained. Also, a non-reflection conditional film 20 is deposited on the back side of the substrate 21.

88. 发明专利

JPS57160123A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57160123A
公开(公告)日：1982-10-02
申请号：JP4555381
申请日：1981-03-30
申请人： HITACHI LTD
发明人： KATAYAMA YOSHIFUMI , SHIMADA JIYUICHI , MARUYAMA EIICHI
IPC分类号： H01L29/78 , H01L21/205 , H01L21/86 , H01L29/04 , H01L29/167 , H01L29/786 , H01L31/0368 , H01L31/04
摘要： PURPOSE:To improve a character while reducing an influence by a particle boundary area by permitting the vicinity of the particle boundary area of polycrystal silicon film to contain the elements of hydrogen, fluorine chlorine and others. CONSTITUTION:At least one element selected from the group including hydrogen, fluorine, chlorine, boron, idodine, lithium, natrium, kalium, rubidium and cesium is caused to be contained in the vicinity of particle boundary of polycrystal silicon film. It may be considered effective that the quantity of the contained monad is 100ppm in valence ratio substantially when the particle size of the crystal is measured large and the proportion of the particle field to the total volumn is relatively small. If the particle size of the crystal is reduced into amorphous condition, it becomes 40% substantially in valence ratio. The containing method wherein the polycrystal semiconductor film is processed with a heat treatment in the plasma atomosphere of the element, is considered more effective.

89. 发明专利

JPS56152280A LIGHT RECEIVING SURFACE 失效
公开(公告)号：JPS56152280A
公开(公告)日：1981-11-25
申请号：JP5415580
申请日：1980-04-25
申请人： HITACHI LTD
发明人： ISHIOKA YOSHIO , IMAMURA YOSHINORI , SHIMOMOTO TAIJI , ADAKA SABUROU , TANAKA YASUO , MARUYAMA EIICHI
IPC分类号： H01J29/45 , H01L21/205 , H01L27/146 , H01L31/0248 , H01L31/09 , H04N5/30 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/374
摘要： PURPOSE:To improve the characteristics of dark current, residual image and printing, and increase resolution by a method wherein a photoconductive layer is comprised of a single layer or a plurality of layers made of predetermined photoconductive materials. CONSTITUTION:A transparent electrode 2 and a photoconductive layer 3 are formed in turn on a light-permeable substrate 1. The photoconductive layer 3 comprises photoconductive materials 7 and 8, for instance. At least one of these photoconductive materials 7 and 8 consists of amorphous silicon containing hydrogen of at least 5-30 atom %, which silicon has an optical forbidden band width of 1.65-2.25eV and such a characteristic that a peak value in an infrared absorption spectrum for a component having a wave number of 2,100cm is greater than that having a wave number of 2,000cm .

90. 发明专利

JPS5697938A MANUFACTURING METHOD FOR TRANSPARENT CONDUCTIVE ELECTRODE 失效
公开(公告)号：JPS5697938A
公开(公告)日：1981-08-07
申请号：JP17580880
申请日：1980-12-15
申请人： HITACHI LTD , HITACHI ELECTRONICS
发明人： SASANO AKIRA , NAKANO TOSHIO , MATSUMARU HARUO , TSUTSUI KEN , HIRAI TADAAKI , MARUYAMA EIICHI
IPC分类号： H01J9/00 , H01J9/02
摘要： PURPOSE:To process the edge section of a stripe type transparent conductive film into a taper form with an acute angle, by providing a slant area on the end of a mask pattern and processing the transparent conductive film by means of sputter etching in ambience of inactive gas. CONSTITUTION:A mask pattern 7 with a gradual taper is formed on the sample thin film 6 on a substrate 1. Since the mask pattern itself is etched, in sputter etching, the pattern edge section of the sample thin film 6 is also tapered. Therefore, the crossectional shape control of the transparent conductive film can be performed by controlling that of the mask pattern and the sputter etching speed ratio of the mask material and the transparent conductive film.

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