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    • 82. 发明申请
    • Method for reading out symbol information and device for reading out symbol information
    • 用于读出符号信息的方法和用于读出符号信息的装置
    • US20060175414A1
    • 2006-08-10
    • US11316546
    • 2005-12-21
    • Hiroshi Nakamura
    • Hiroshi Nakamura
    • G06K7/10
    • G06K7/1456G06K7/14G06K7/1486
    • To provide a method for reading out symbol information and a device for reading out symbol information which are able to prevent a decline in decoding reliability by reducing noise caused by a quantized error, localized contaminations or the like. The method for reading out symbol information may comprise a process in which the image data, obtained by imaging the symbol information such as bar codes and the like, are converted to corrected image data having zero angle of inclination; a smoothing process in which the corrected image data are smoothed; and a column specifying process in which breakpoints of said symbol information column are specified by computing the total sum in the row direction on the smoothed corrected image data.
    • 提供一种读出符号信息的方法和用于读出能够通过减少由量化误差,局部污染等引起的噪声而能够防止解码可靠性下降的符号信息的装置。 用于读出符号信息的方法可以包括将通过对诸如条形码等的符号信息进行成像而获得的图像数据转换为具有零倾角的校正图像数据的处理; 平滑处理,其中校正的图像数据被平滑化; 以及列指定处理,其中通过计算平滑校正图像数据上的行方向上的总和来指定所述符号信息列的断点。
    • 83. 发明授权
    • Damping intermediate pillar and damping structure using the same
    • 阻尼中柱和阻尼结构使用相同
    • US07076926B2
    • 2006-07-18
    • US10213201
    • 2002-08-06
    • Kazuhiko KasaiHiroshi NakamuraYasuhiro NakataTakashi Shirai
    • Kazuhiko KasaiHiroshi NakamuraYasuhiro NakataTakashi Shirai
    • E04H9/02E04B1/98
    • E04H9/02E04B2001/2415E04B2001/2442E04B2001/2445E04B2001/2448
    • A damping intermediate pillar, which can exhibit a sufficient resistance against the horizontal force of a strong earthquake by reinforcing the joins between the damping intermediate pillar and the upper and lower beams, is disclosed. A damping intermediate pillar 14, used for a building or a structure configured of pillars 1 and beams 3, is divided into upper and lower damping intermediate pillar portions 14a, 14b of H shape steel, and includes a plurality of inner steel plates 7b fixed on the damping intermediate pillar portion 14b and a plurality of outer steel plates 7a fixed on the other damping intermediate pillar portion 14a. The inner and outer steel plates are arranged alternately in a single or a plurality of layers, between which a viscoelastic member 15 is held to make up a viscoelastic damper 17. The coupling end surfaces of the intermediate pillar portions 14a, 14b directed vertically are fixed on the upper and lower floor beams 3a, 3b. Further, one or both sides of each of the damping intermediate pillar portions 14a, 14b (i.e. the coupling members 13a, 13b) and the upper and lower floor beams 3a, 3b are coupled to each other by knee braces 19.
    • 公开了一种阻尼中间柱,其通过加强阻尼中间柱和上梁和下梁之间的接合而能够表现出抵抗强烈地震的水平力的足够阻力。 用于建筑物或由支柱1和梁3构成的结构的阻尼中间柱14被分成H形钢的上下阻尼中间柱部分14a,14b,并且包括多个内钢板7 b固定在阻尼中间柱部分14b上,多个外部钢板7a固定在另一个阻尼中间柱部分14a上。 内钢板和外钢板交替地布置成一个或多个层,在其间保持粘弹性构件15以构成粘弹性阻尼器17。 垂直定向的中间柱部分14a,14b的连接端面固定在上下地板梁3a,3b上。 此外,每个阻尼中间柱部分14a,14b(即,联接构件13a,13b)和上部和下部地板梁3a,3b的一侧或两侧通过膝盖支架彼此联接 19。
    • 88. 发明授权
    • Data reprogramming/retrieval circuit for temporarily storing programmed/retrieved data for caching and multilevel logical functions in an EEPROM
    • 数据重新编程/检索电路,用于临时存储用于EEPROM中的缓存和多级逻辑功能的编程/检索数据
    • US07009878B2
    • 2006-03-07
    • US10664977
    • 2003-09-22
    • Koji HosonoHiroshi NakamuraKen TakeuchiKenichi Imamiya
    • Koji HosonoHiroshi NakamuraKen TakeuchiKenichi Imamiya
    • G11C16/04
    • G11C16/0483G11C5/145G11C7/1006G11C11/5621G11C11/5628G11C11/5635G11C11/5642G11C16/10G11C16/24G11C16/26G11C16/3445G11C16/3454G11C16/3459G11C2211/5621G11C2211/5641G11C2211/5642G11C2211/5643
    • A non-volatile semiconductor device has a memory cell array having electrically erasable programmable non-volatile memory cells, reprogramming and retrieval circuits that temporarily store data to be programmed in the memory cell array and sense data retrieved from the memory cell array. Each reprogramming and retrieval circuit has a first latch and a second latch that are selectively connected to the memory cell array and transfer data each other. A controller controls the reprogramming and retrieval circuits on data-reprogramming operation to and data-retrieval operation from the memory cell array. Each reprogramming and retrieval circuit has a multilevel logical operation mode and a caching operation mode. In the multilevel logical operation mode, re-programming and retrieval of upper and lower bits of two-bit four-level data is performed using the first and the second latches in storing the two-bit four-level data in one of the memory cells in a predetermined threshold level range. In the caching operation mode, data transfer between one of the memory cells selected in accordance with a first address and the first latch is performed while data transfer is performed between the second latch and input/output terminals in accordance with a second address with respect to one-bit two-level data to be stored in one of the memory cells.
    • 非易失性半导体器件具有存储单元阵列,其具有电可擦除可编程非易失性存储器单元,重新编程和检索电路,其临时存储要存储在存储单元阵列中的要编程的数据并感测从存储器单元阵列检索的数据。 每个重新编程和检索电路具有选择性地连接到存储单元阵列并且彼此传送数据的第一锁存器和第二锁存器。 一个控制器控制重新编程和检索电路的数据重新编程操作和数据检索操作从存储单元阵列。 每个重新编程和检索电路都具有多级逻辑操作模式和缓存操作模式。 在多级逻辑操作模式中,使用第一和第二锁存器在存储单元之一中存储两位四电平数据来执行二位四电平数据的高位和低位的重新编程和检索 在预定的阈值电平范围内。 在高速缓存操作模式中,根据第一地址选择的存储器单元之一和第一锁存器之间的数据传输是在第二锁存器和输入/输出端子之间根据第二地址相对于 要存储在其中一个存储单元中的一位二电平数据。