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81. 发明申请

US20070111477A1 Semiconductor wafer 审中-公开
标题翻译：半导体晶圆
公开(公告)号：US20070111477A1
公开(公告)日：2007-05-17
申请号：US11600099
申请日：2006-11-16
申请人： Yumi Maruyama , Tetsuo Fujii
发明人： Yumi Maruyama , Tetsuo Fujii
IPC分类号： H01L21/00 , H01L23/544
CPC分类号： B23K26/40 , B23K26/53 , B23K2103/50 , B28D5/0011 , H01L21/78
摘要： A semiconductor wafer is disclosed for which irradiation of a laser beam forms a modified region due to multiphoton absorption to thereby facilitate dicing of the semiconductor wafer. The semiconductor wafer includes a formation member and a scribe groove located on the formation member according to an irradiation position of the laser beam. The scribe groove defines an open end and a bottom end. A width of the scribe groove is greater at the open end than at the bottom end.
摘要翻译：公开了半导体晶片，其由于多光子吸收而激光束的照射形成改质区域，从而有利于半导体晶片的切割。半导体晶片包括根据激光束的照射位置位于形成构件上的形成构件和划线槽。划线槽限定开口端和底端。划线槽的宽度在开口端大于底端宽度。

82. 发明授权

US07091109B2 Semiconductor device and method for producing the same by dicing 有权
公开(公告)号：US07091109B2
公开(公告)日：2006-08-15
申请号：US10896042
申请日：2004-07-22
申请人： Tetsuo Fujii , Hiroshi Muto , Shinji Yoshihara , Sumitomo Inomata
发明人： Tetsuo Fujii , Hiroshi Muto , Shinji Yoshihara , Sumitomo Inomata
IPC分类号： H01L21/46 , H01L21/50
CPC分类号： H01L21/6836 , B29C33/0022 , B29C2043/023 , B81C1/00888 , B81C1/00896 , B81C2201/053 , H01L2221/68327 , H01L2224/16 , H01L2224/45124 , H01L2224/45144 , H01L2224/48095 , H01L2224/48465 , H01L2224/73265 , H01L2924/01057 , H01L2924/01068 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/10253 , H01L2924/16235 , H01L2924/30105 , H01L2924/00 , H01L2924/00014
摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.

83. 发明授权

US07089799B2 Pressure sensor device and method of producing the same 失效
标题翻译：压力传感器装置及其制造方法
公开(公告)号：US07089799B2
公开(公告)日：2006-08-15
申请号：US10744097
申请日：2003-12-24
申请人： Takashi Nomura , Keiji Horiba , Tetsuo Fujii
发明人： Takashi Nomura , Keiji Horiba , Tetsuo Fujii
IPC分类号： G01L7/00
CPC分类号： G01L19/147 , G01L19/0636 , G01L19/141 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： A pressure sensor device having a casing (10) accommodating a sensor element (20) mounted on a mounting member (30). The casing (10) includes an opening (11) in one surface thereof. The sensor element (20) is arranged in the opening (11) for measuring the pressure outside of the casing. The casing (10) is preferably mounted on the circuit board, which is the mounting member (30). The casing (10) is mounted on the circuit board in such a state that the opening side (11) faces the circuit board.
摘要翻译：一种具有容纳安装在安装构件（30）上的传感器元件（20）的壳体（10）的压力传感器装置。壳体（10）在其一个表面中包括开口（11）。传感器元件（20）布置在用于测量壳体外部的压力的开口（11）中。壳体（10）优选安装在作为安装构件（30）的电路板上。壳体（10）以开口侧（11）面向电路板的状态安装在电路板上。

84. 发明授权

US07040165B2 Semiconductor mechanical sensor 失效
标题翻译：半导体机械传感器
公开(公告)号：US07040165B2
公开(公告)日：2006-05-09
申请号：US11062935
申请日：2005-02-22
申请人： Tetsuo Fujii , Masahito Imai
发明人： Tetsuo Fujii , Masahito Imai
IPC分类号： G01P15/125
CPC分类号： B81B7/0006 , B81B2201/0235 , C07C303/32 , C07C303/44 , G01C19/56 , G01C19/5656 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P2015/0817 , G01P2015/0828 , Y10T29/49002 , Y10T29/49004 , C07C309/17
摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要翻译：具有S / N比提高的新结构的半导体机械传感器。在硅衬底1的中心部分，形成包括梁结构的凹部2。在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

85. 发明申请

US20050156309A1 Semiconductor sensor 有权
标题翻译：半导体传感器
公开(公告)号：US20050156309A1
公开(公告)日：2005-07-21
申请号：US11075881
申请日：2005-03-10
申请人： Tetsuo Fujii , Tsuyoshi Fukada , Kenichi Ao
发明人： Tetsuo Fujii , Tsuyoshi Fukada , Kenichi Ao
IPC分类号： B81C1/00 , H01L21/301 , H01L21/68 , H01L21/48
CPC分类号： H01L21/6836 , B29C33/0022 , B29C2043/023 , B81C1/00888 , B81C1/00896 , B81C2201/053 , H01L2221/68327 , H01L2224/16 , H01L2224/45124 , H01L2224/45144 , H01L2224/48095 , H01L2224/48465 , H01L2224/73265 , H01L2924/01057 , H01L2924/01068 , H01L2924/01079 , H01L2924/01322 , H01L2924/09701 , H01L2924/10253 , H01L2924/16235 , H01L2924/30105 , H01L2924/00 , H01L2924/00014
摘要： A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.
摘要翻译：将保护片固定在夹具上，除去对应于要进行切割的区域的保护片的区域，形成槽。然后，在夹具的相反侧将半导体晶片接合到保护片，并将夹具与保护片和半导体晶片接合在一起。之后，通过沿保护片的沟槽切割将半导体晶片切割成半导体芯片。由于保护片不是通过切割而切割的，所以不会产生保护片的废料，从而防止对芯片的污染。

86. 发明授权

US06584852B2 Electrical capacitance pressure sensor having electrode with fixed area and manufacturing method thereof 有权
标题翻译：具有固定面积的电极的电容式压力传感器及其制造方法
公开(公告)号：US06584852B2
公开(公告)日：2003-07-01
申请号：US10176590
申请日：2002-06-24
申请人： Yasutoshi Suzuki , Seiichiro Ishio , Tetsuo Fujii , Keiichi Shimaoka , Hirofumi Funahashi
发明人： Yasutoshi Suzuki , Seiichiro Ishio , Tetsuo Fujii , Keiichi Shimaoka , Hirofumi Funahashi
IPC分类号： G01L912
CPC分类号： G01L9/0073
摘要： An electrical capacitance pressure sensor has a lower electrode, a movable electrode, and an upper electrode. A first cavity portion is formed between the lower electrode and the movable electrode. A second cavity portion is formed between the upper electrode and the movable electrode. The substrate has an opening portion that penetrates the substrate from the first surface to the second surface thereof. The lower electrode has at least one first window portion that penetrates the lower electrode from the side of the substrate to the side of the first cavity portion and communicates the cavity portion to the opening portion of the substrate. The upper electrode has at least one second window portion that penetrates the upper electrode from the side of the cavity portion to the outside thereof to communicate the cavity portion with the outside.
摘要翻译：电容式压力传感器具有下电极，可动电极和上电极。第一空腔部分形成在下电极和可动电极之间。第二空腔部分形成在上电极和可动电极之间。衬底具有从第一表面到第二表面穿透衬底的开口部分。下电极具有至少一个第一窗口部分，其从基板的侧面到第一空腔部分的侧面穿透下电极，并且将空腔部分连通到基板的开口部分。上电极具有至少一个第二窗口部分，其从空腔部分的侧面向外部贯穿上部电极，以将空腔部分与外部连通。

87. 发明授权

US06525400B2 Semiconductor memory device and method of manufacturing the same 失效
公开(公告)号：US06525400B2
公开(公告)日：2003-02-25
申请号：US10078506
申请日：2002-02-21
申请人： Tetsuo Fujii , Minekazu Sakai , Akira Kuroyanagi
发明人： Tetsuo Fujii , Minekazu Sakai , Akira Kuroyanagi
IPC分类号： H01L2900
CPC分类号： H01L29/7883 , H01L21/28273
摘要： A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.

88. 发明授权

US06365458B1 Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06365458B1
公开(公告)日：2002-04-02
申请号：US09661572
申请日：2000-09-14
申请人： Tetsuo Fujii , Minekazu Sakai , Akira Kuroyanagi
发明人： Tetsuo Fujii , Minekazu Sakai , Akira Kuroyanagi
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L27/11524 , H01L29/7883
摘要： A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.
摘要翻译：在半导体衬底的表面上形成栅极氧化膜。在对应于隧道区域的部分中形成厚度小于栅极绝缘膜厚度的隧道绝缘膜。在栅极绝缘膜上形成杂质浓度低的第一硅膜。在第一硅膜上形成杂质浓度高于第一硅膜的第二硅膜，以便与第一硅膜连接。通过绝缘膜在第二硅膜上形成第三硅膜。第二和第三硅膜分别形成浮动和控制栅极，从而形成半导体存储器件。

89. 发明授权

US06244112B1 Acceleration sensor and process for the production thereof 有权
标题翻译：加速度传感器及其制造方法
公开(公告)号：US06244112B1
公开(公告)日：2001-06-12
申请号：US09457350
申请日：1999-12-09
申请人： Tetsuo Fujii
发明人： Tetsuo Fujii
IPC分类号： G01P15125
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0817
摘要： A single crystal silicon substrate (1) is bonded through an SiO2 film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are, respectively, coated with an SiO2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.
摘要翻译：单晶硅基板（1）通过SiO 2膜（9）与单晶硅基板（8）接合，将单晶硅基板（1）制成薄膜。在单晶硅衬底（1）上形成悬臂（13），并且使悬臂（13）的平行于单晶硅衬底（1）的表面的方向的厚度小于单晶硅衬底在单晶硅衬底（1）的深度方向上的悬臂，并且可以在平行于衬底表面的方向上移动。此外，悬臂（13）的表面和单晶硅衬底（1）的与悬臂（13）相对的部分分别涂覆有SiO 2膜（5），使得电极短路在容量型传感器中被阻止。此外，在单晶硅衬底（1）上形成信号处理电路（10），从而当悬臂（13）移动时进行信号处理。

90. 发明授权

US06227049B1 Acceleration sensor and process for the production thereof 失效
公开(公告)号：US06227049B1
公开(公告)日：2001-05-08
申请号：US08566600
申请日：1995-12-04
申请人： Tetsuo Fujii
发明人： Tetsuo Fujii
IPC分类号： G01P15125
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0817
摘要： A single crystal silicon substrate (1) is bonded through an SiO2 film (9) to a single crystal silicon substrate (8), and the single crystal silicon substrate (1) is made into a thin film. A cantilever (13) is formed on the single crystal silicon substrate (1), and the thickness of the cantilever (13) in a direction parallel to the surface of the single crystal silicon substrate (1) is made smaller than the thickness of the cantilever in the direction of the depth of the single crystal silicon substrate (1), and movable in a direction parallel to the substrate surface. In addition, the surface of the cantilever (13) and the part of the single crystal silicon substrate (1), opposing the cantilever (13), are, respectively, coated with an SiO2 film (5), so that an electrode short circuit is prevented in a capacity-type sensor. In addition, a signal-processing circuit (10) is formed on the single crystal silicon substrate (1), so that signal processing is performed as the cantilever (13) moves.

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