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81. 发明专利

JPS60239048A HEAT CONDUCTIVE COOLING MODULE DEVICE 失效
公开(公告)号：JPS60239048A
公开(公告)日：1985-11-27
申请号：JP9286784
申请日：1984-05-11
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , SOGA TASAO , YATSUNO KOUMEI , MIYATA KENJI , OKAMURA MASAHIRO , KOBAYASHI FUMIYUKI , OOGURO TAKAHIRO
IPC分类号： H01L23/40 , H01L23/36 , H01L23/433
摘要： PURPOSE:To obtain a heat conductive cooling module device having an almost equal working temperature by a method wherein, when a cooling means in going to be provided outside the airtight container wherein a heat generating device having different heating power, the thermal resistivity of a heat transfer device is increased or decreased corresponding to the intensity of the heating power. CONSTITUTION:A plurality of LSI chips 10 to be used for large power consumption and a plurality of LSI chips 10a to be used for small power consumption are fixed to the surface of a ceramic multilayer wiring substrate 12 using microscopic solder balls 11, the connection pin 14 protruding to the other surface of the substrate 12 is inserted and fixed to the through hole of the wiring board 13 which is supporting an auxiliary circuit. Then, chips 10 and 10a are surrounded by an airtight container 19 and a housing 16, He gas and the like of excellent heat conductivity is filled in there, and the piston-like protruded part 20 protruding to the inner surface of the housing 16 is pressed to each chip through the intermediary of a spring. According to this constitution, the spring is surrounded by a heat conductive connecting member 20a, but at this time, the surface of the member 20a on the side of the chip 10a is to be coated by an SiO2 film 20a having a high thermal resistivity.

82. 发明专利

JPS6041877B2 失效
公开(公告)号：JPS6041877B2
公开(公告)日：1985-09-19
申请号：JP8294878
申请日：1978-07-10
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , YATSUNO KOMEI
IPC分类号： G01B7/16 , H01L21/52 , H01L21/58 , H01L29/84

83. 发明专利

JPS59186332A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS59186332A
公开(公告)日：1984-10-23
申请号：JP5930383
申请日：1983-04-06
申请人： Hitachi Ltd
发明人： KURIHARA YASUTOSHI , MINAGAWA TADASHI , YATSUNO KOUMEI , WAKUI TAKAYUKI , OOGAMI MICHIO
IPC分类号： H01L21/52 , H01L21/58
CPC分类号： H01L24/32 , H01L24/29 , H01L24/83 , H01L2224/29011 , H01L2224/29076 , H01L2224/291 , H01L2224/29101 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83101 , H01L2224/83194 , H01L2224/8385 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/00 , H01L2924/00014
摘要： PURPOSE:To suppress the thermal strain generated by the operation of a transistor and avoid the thermal fatigue of a solder layer by a method wherein, when a transistor substrate is fixed to a supporting member made of a copper plate by a solder layer composed of lead-tin-silver, a loop shape metal member, whose thermal expansion coefficient is larger than that of Si and smaller than that of copper, is buried in the solder layer. CONSTITUTION:A transistor substrate 2 is conductively adhered on a supporting member 1 made of a copper plate by a solder layer 3 of 93.5% lead-5% tin- 1.5% silver system. At that time, a loop shape metal member 4, which has the intermediate thermal expansion coefficient between the thermal expansion coefficient of copper and the thermal expansion coefficient of Si, is buried in the solder layer 3. This member is composed of a compound metal plate which has a cut-out part 44 at its center. The compound metal plate is composed in such a way that an iron-36% Ni alloy layer 42 is sandwiched between copper layers 41 and 43 and these three layers are made solid by cold rolling. With this constitution, heat-cycle resistance of the solder layer 3 is improved.
摘要翻译：目的：为了抑制由于晶体管的工作而产生的热应变，并且通过以下方法抑制焊料层的热疲劳，其中当晶体管基板通过由铅构成的焊料层固定到由铜板制成的支撑部件锡 - 银，其热膨胀系数大于Si且小于铜的环形金属构件被掩埋在焊料层中。构成：晶体管基板2通过93.5％的铅-5％锡-1.5％银系的焊料层3导电地粘附在由铜板制成的支撑构件1上。此时，具有铜的热膨胀系数和Si的热膨胀系数之间的中间热膨胀系数的环形金属构件4埋设在焊料层3中。该构件由复合金属板在其中心有一个切口部分44。复合金属板以铁36％Ni合金层42夹在铜层41和43之间的方式构成，这三层通过冷轧制成固体。由此，能够提高焊料层3的耐热循环性。

84. 发明专利

JPS59175733A Insulated type semiconductor device 失效
标题翻译：绝缘型半导体器件
公开(公告)号：JPS59175733A
公开(公告)日：1984-10-04
申请号：JP4888283
申请日：1983-03-25
申请人： Hitachi Ltd
发明人： KURIHARA YASUTOSHI , MINAGAWA TADASHI , YATSUNO KOUMEI
IPC分类号： H01L21/52 , H01L21/58 , H01L29/74
CPC分类号： H01L24/32 , H01L24/83 , H01L2224/291 , H01L2224/8319 , H01L2224/8385 , H01L2924/01029 , H01L2924/014 , H01L2924/07802
摘要： PURPOSE:To eliminate the possibility of denaturation or damage based on thermal strain by bonding a metallic plate for loading a semiconductor base body onto a metallic layer consisting of a plurality of inorganic insulating members with a metallic solder. CONSTITUTION:An alumina plate 2 is bonded with one main surface of a metallic support plate 1, and a metallized layer 201 and a copper layer 203 are formed on the bonding surface. A metallized layer 202 and a copper layer 204 are shaped on one surface of the plate 2. A metallic plate 3 is bonded on the layer 204 with a solder layer 102. The layers 203, 204 are unified, and a thermal expansion coefficient as the whole of the composite alumina plate 2 is brought close to that of the metallic plate 3. According to such constitution, heat cycle resistance can be improved without substantially lowering radiant property.
摘要翻译：目的：为了消除基于热应变的变性或损伤的可能性，通过将用于将半导体基体加载到由具有金属焊料的多个无机绝缘构件组成的金属层上的金属板。构成：将氧化铝板2与金属支撑板1的一个主面接合，在接合面上形成金属化层201和铜层203。金属化层202和铜层204在板2的一个表面上成形。金属板3用焊料层102结合在层204上。层203,204是统一的，并且热膨胀系数为使整个复合氧化铝板2靠近金属板3。根据这种结构，可以提高耐热循环性，而不会显着降低辐射性。

85. 发明专利

JPS5952853A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5952853A
公开(公告)日：1984-03-27
申请号：JP16236182
申请日：1982-09-20
申请人： Hitachi Ltd
发明人： KURIHARA YASUTOSHI , MINAGAWA TADASHI , OOGAMI MICHIO , WAKUI TAKAYUKI , YATSUNO KOUMEI
IPC分类号： H01L21/52 , H01L23/12 , H01L25/07 , H01L25/18
CPC分类号： H01L25/072 , H01L24/32
摘要： PURPOSE:To reduce thermal strain applied to the end section of a solder layer, and to prevent the deformation and thermal fatigue breakdown of each member by forming a notch section or a recessed section to at least one of the fringe sections of the surfaces of a semiconductor base body and an insulating member and the surface section of a metallic member opposite to the fringe sections. CONSTITUTION:A metallic support member 11 is formed by a copper plate, and the recessed section 28 of 3mm. width X 0.5mm. depth is formed to a section opposite to the fringe section of the insulating member 12 placed in the upper surface of the member 11. The insulating members 12 consisting of two alumina plates are bonded by the solder layers 29 while being conformed to the positions of the recessed sections 28 of the metallic support member 11, and metallic plates 13 are bonded on each insulating member 12 by the solder layers 30. Sections opposite to the solder layers 29, 30 of the insulating members 12 are metallized. The metallic plate 13 is formed by a copper plate in 2mm. thickness, and the notch section 31 of 3mm. width X 0.5mm. depth is formed to the fringe section of the lower surface of the plate 13 and the recessed sections 28 of 1.5mm. width X0.5mm. depth to sections opposite to the fringe sections of semiconductor base bodies 14, 15, 16 placed on the upper surface of the plate 13 by a press.
摘要翻译：目的：为了减少施加在焊料层的端部上的热应变，并且为了防止每个部件的变形和热疲劳击穿，通过将凹口部分或凹部形成至一个边缘部分半导体基体和绝缘构件以及与边缘部相对的金属构件的表面部。构成：金属支撑构件11由铜板形成，凹部28由3mm构成。宽X 0.5mm。深度形成在与放置在构件11的上表面中的绝缘构件12的边缘部分相对的部分上。由两个氧化铝板构成的绝缘构件12通过焊料层29接合，同时符合金属支撑构件11的凹部28和金属板13通过焊料层30接合在每个绝缘构件12上。与绝缘构件12的焊料层29,30相对的部分被金属化。金属板13由2mm的铜板形成。厚度，切口部31为3mm。宽X 0.5mm。深度形成在板13的下表面的边缘部分和1.5mm的凹部28中。宽X0.5mm。深度与通过压机放置在板13的上表面上的半导体基体14,15,16的边缘部分相对的部分。

86. 发明专利

JPS5947736A Insulated semiconductor device 失效
标题翻译：绝缘半导体器件
公开(公告)号：JPS5947736A
公开(公告)日：1984-03-17
申请号：JP15656182
申请日：1982-09-10
申请人： Hitachi Ltd
发明人： KURIHARA YASUTOSHI , MINAGAWA TADASHI , OOGAMI MICHIO , WAKUI TAKAYUKI , YATSUNO KOUMEI
IPC分类号： H01L25/07 , H01L21/52 , H01L21/58 , H01L23/12 , H01L25/18
CPC分类号： H01L24/83 , H01L24/32 , H01L2224/32014 , H01L2224/8319 , H01L2224/8385 , H01L2924/01029 , H01L2924/014 , H01L2924/07802
摘要： PURPOSE:To reduce thermal distortion during manufacture of operation and eliminate fear of deformation, change of characteristic and breakdown of each member by providing recess part in the form of closed loop to the area corresponding to periphery of insulating member at the surface where is in contact with said insulating member, of a metal supporting plate bonding an inorganic insulating member with a metal brazing material. CONSTITUTION:Two sheets of alumina plate 2 are bonded onto a metal supporting plate 1, a metal plate 3 which is almost the same shape as said alumina plate is respectively bonded to each alumina plate 2 and thereby a circuit is assembled on the metal plate 3. The supporting plate 1 is provided with the recess part 111 in the form of closed loop with the width of 3mm. and depth of 0.5mm. at the area corresponding to the periphery of alumina plate 2, for example, of the one main surface 11 of a copper plate in the thickness of 3.2mm.. Two sheets of alumina plate 2 are bonded by solder layer 101 on the main surface 11 of the supporting plate 11. Thickness of solder layer 101 is about 0.1mm. at the center while about 0.6mm. at the periphery. The metallizing is executed to the entire part of bonding surface of alumina plate 2, except for the periphery, in view of giving wetness for soldering.
摘要翻译：目的：为了减少制造过程中的热变形，通过将闭环形式的凹部设置在与接触面相对应的绝缘部件的周围的区域，减少变形的担心，变形，改变各部件的特性和破坏所述绝缘构件具有将无机绝缘构件与金属钎焊材料接合的金属支撑板。构成：将两片氧化铝板2接合到金属支撑板1上，将与所述氧化铝板几乎相同形状的金属板3分别接合到每个氧化铝板2上，从而将电路组装在金属板3上支撑板1设置有宽度为3mm的闭环形式的凹部111。深度为0.5mm。在与铝板2的周围相对应的区域，例如铜板的一个主表面11的厚度为3.2mm。两片氧化铝板2通过焊料层101在主表面11上焊料层101的厚度约为0.1mm。在中心约0.6mm。在周边。考虑到给予焊接湿度，除了外围之外，对氧化铝板2的接合表面的整个部分进行金属化。

87. 发明专利

JPS5852859A INSULATED SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5852859A
公开(公告)日：1983-03-29
申请号：JP15062581
申请日：1981-09-25
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , OOGAMI MICHIO , YATSUNO KOUMEI
IPC分类号： H01L23/40 , H01L23/373 , H05K1/16
摘要： PURPOSE:To reduce the thermal strain caused in case of manufacture or during operation by a method wherein, in the semiconductor device where the metallic supporting members are electrically insulated but thermally and mechanically connected, the thermal expansion coefficient of the insulated members is made approximately coincident with that of the supporting members and the thermal expansion coefficient of composite metallic sheet is made coincident with that of semiconductor substrate. CONSTITUTION:The metallic supporting sheet 1 made of aluminum sheet is provided with the thermal expansion coefficient of 23.9X10 / deg.C while the composite resin film 2, an integrated film comprising fluorine resin films 221 and 222 on the both main surfaces of polyamide film 21 is also provided with the apparent thermal expansion coefficient of about 21X10 / deg.C approximateing to that of said metallic supporting sheet 1. The composite metallic sheet 3, a directly integrated sheet by cold rolled process comprising alloy sheets 321 and 322 made of 0.2mm. thick iron and 36% nickel is provided with the apparent thermal expansion coefficient of about 6.0X10 / deg.C set between the thermal expansion coefficient (3.5X10 / deg.C) of silicon as the material of the composite resin film 2 and the semiconductor substrate.

88. 发明专利

JPS581551B2 失效
公开(公告)号：JPS581551B2
公开(公告)日：1983-01-11
申请号：JP15242477
申请日：1977-12-20
申请人： HITACHI LTD
发明人： SHIMAZOE MICHITAKA , KURIHARA YASUTOSHI , NISHIHARA MOTOHISA , YATSUNO KOMEI
IPC分类号： G01L9/04 , G01L9/00 , H01L29/84

89. 发明专利

JPS57159033A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS57159033A
公开(公告)日：1982-10-01
申请号：JP4394981
申请日：1981-03-27
申请人： HITACHI LTD
发明人： SUZUKI YOSHIHIRO , YATSUNO KOUMEI , KURIHARA YASUTOSHI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To reduce the cost of a semiconductor device by providing an alumina series ceramic substrate, a copper film secured through a copper oxidized layer on the substrate and a semiconductor element secured onto the copper film, thereby simplifying the semiconductor power module structure. CONSTITUTION:Copper films 2, 2' are secured via copper oxidized layers 3, 3' on both side surfaces of an alumina substrate 1, a semiconductor element 4 is secured through a solder layer 5 on the film 3, and is formed of a semiconductor substrate 41 and a molybdenum plate 43 secured with solder layer 42 to the substrate 41. Lead plates 6, 7 are formed on the substrate 41 and the film 2, a copper heat sink 8 is secured via a solder layer 9, and is molded with resin 10. In this manner, current lead boards for a metallized layer and the element are operated by the copper films, and the structure can be simplified and the cost can be reduced.

90. 发明专利

JPS57102057A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57102057A
公开(公告)日：1982-06-24
申请号：JP17725780
申请日：1980-12-17
申请人： HITACHI LTD
发明人： KURIHARA YASUTOSHI , YATSUNO KOUMEI
IPC分类号： H01L21/52 , H01L21/60 , H01L25/07 , H01L25/18
摘要： PURPOSE:To enable to arrange easily a circuit element for substitution in a semiconductor device by a method wherein a space is reserved on a conductor plate as to enable to provide a reserve circuit element of the same kind with a circuit element provided on the conductor plate at the electrically and thermally equivalent position with the existing circuit element. CONSTITUTION:The first conductor 1 is provided on a metal supporter 2 interposig an insulator 3 between then. Moreover the second conductors 4, 4' are provided on the first conductor 1 interposing insulators 5, 5' between then. At this time, the second conductors 4, 4' are arranged as to become equivalent electrically and thermally to both of the semiconductor element pellet 6 and another semiconductor element pellet 8 to be substituted therefor. Accordingly even when electric connection between the semiconductor element pellet 6 and the other member is failed, the other semiconductor element pellet 8 for substitution can be arranged at once at the electrically and thermally equivalent position.

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