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    • 86. 发明专利
    • AIR FUEL RATIO SENSOR FOR AUTOMOBILE
    • JPS61180131A
    • 1986-08-12
    • JP1998285
    • 1985-02-06
    • HITACHI LTD
    • SUZUKI KIYOMITSUSASAYAMA TAKAOMIKI MASAYUKI
    • G01N27/41G01N27/27G01N27/406G01N27/409G01N27/416
    • PURPOSE:To detect air fuel ratios in three states of a rich range, an idel air fuel ratio, and a lean range with high precision through simple constitution by setting the potential of the 2nd electrode higher than the ground level of a driving circuit. CONSTITUTION:The potential of the 2nd electrode 23 is VR lower than the potential of the 1st potential 22 in the lean range, so the oxygen of the electrode 23 is converted to oxygen ions because of the voltage VR and it is transported to the electrode 22 through a zirconia solid electrolyte 20. It is oxidized again here and radiated in the atmosphere. At this time, a positive pump current IP flows in a circuit to vary an output voltage EO. Further, such a current value IP that IP>0 corresponds to the amount of oxygen which flows in through a diffusion resistance 24 from an exhaust gas atmosphere through the diffusion to an electrode 23. Further, the amounts of remaining oxygen in exhaust gas and remaining unburnt gas such as carbon dioxide which flow to the electrode 23 are chemical equivalents and the both are burnt completely through the catalyzation of the electrode 23. Therefore, the oxygen ion is eliminated,.
    • 88. 发明专利
    • Semiconductor pressure sensor
    • 半导体压力传感器
    • JPS59184819A
    • 1984-10-20
    • JP5930783
    • 1983-04-06
    • Hitachi Ltd
    • YAMADA KAZUJISATOU HIDEOKAWAKAMI KANJIKATOU KAZUOSASAYAMA TAKAO
    • G01R27/02G01B7/16G01D3/028G01L1/22G01L9/00G01L9/04G01L9/06G01L19/04
    • G01L1/2281G01L9/065
    • PURPOSE:To obtain an exact output by executing not only a compensation of a temperature variation of sensitivity of a gauge resistance but also a compensation of a temperature variation of an amplification degree of an amplifying circuit. CONSTITUTION:A semiconductor pressure sensor amplifies outputs V1-V2 of a Wheatstone bridge constituted of gauge resistances G1-G4, by an operational amplifier OP2, and outputs voltage V0. The sensitivity of the bridge is varied as shown by a curve 9 with temperature, therefore, a current source Ib has a characteristic as shown by a curve 10, and compensates a temperature variation of the sensitivity. On the other hand, in order to compensate an amplification degree variation by a temperature variation of the gauge resistances G1-G4, a gauge resistance G5 is used, and supply voltage V4 to the bridge is varied as shown by a curve 11. In this way, even if a temperature variation is generated, the output voltage V0 shows an exact pressure.
    • 目的:通过不仅对表面电阻的灵敏度的温度变化进行补偿,而且通过执行放大电路的放大度的温度变化的补偿来获得精确的输出。 构成:半导体压力传感器通过运算放大器OP2放大由电阻G1-G4构成的惠斯通电桥的输出V1-V2,并输出电压V0。 如图9所示,桥的灵敏度随温度变化,因此,电流源Ib具有如曲线10所示的特性,并补偿灵敏度的温度变化。 另一方面,为了通过表面电阻G1-G4的温度变化来补偿放大率的变化,使用表阻值G5,并且如曲线11所示,变化到桥的电源电压V4。在此 即使产生温度变化,输出电压V0也显示精确的压力。
    • 89. 发明专利
    • Pressure sensor circuit
    • 压力传感器电路
    • JPS5931404A
    • 1984-02-20
    • JP14106782
    • 1982-08-16
    • Hitachi Ltd
    • YAMADA KAZUJISATOU HIDEOKATOU KAZUOKAWAKAMI HIROJIKANZAWA RIYOUSAKUSASAYAMA TAKAO
    • G01L9/04G01B7/16G01L9/00G01L9/06G01D3/04
    • G01L9/0054G01L9/065Y10S323/907
    • PURPOSE:To perform precise temperature compensation regardless of the fluctuation of a source voltage, by using a constant current souce proportional to the absolute temperature, a constant current souce immue from the influence of temperature, and a constant current source proportional to the temperature characteristic of a gauge resistance. CONSTITUTION:The circuit consisting of transistors (TR) Q1 and Q2, resistances R3 and R4 whose temperature coefficients are nearly zero, and a constant current source 19 is used frequently as a constant current souce in general in the form of an integrated circuit. This circuit supplies a current IT proportional to absolute temperature T and a current IC which does not depend upon the temperature. The circuit consisting of a TRQ3, constant current source 20, amplifier 21, resistance R5 which is almost under no influence of temperature, and resistance R6 whose is nearly equal to a diffused resistance constituting a bridge 22 generates a constant current IR (SINK) nearly equal to the temperature coefficient of the gauge resistance. Then, a current IT+IC-IR is supplied to the bridge 22 by those circuits.
    • 目的:通过使用与绝对温度成比例的恒定电流来执行精确的温度补偿,无论电源电压是否波动,恒温电流均来自温度的影响,恒定电流源与温度特性成正比 表阻。 构成:通常以集成电路的形式,将晶体管(TR)Q1和Q2,温度系数接近零的电阻R3和R4以及恒定电流源19频繁地用作恒定电流源的电路。 该电路提供与绝对温度T成比例的电流IT和不依赖于温度的电流IC。 由TRQ3,恒流源20,放大器21,几乎不受温度影响的电阻R5和几乎等于构成桥22的扩散电阻的电阻R6组成的电路产生近似于恒定电流IR(SINK) 等于表面电阻的温度系数。 然后,这些电路向桥接器22提供电流IT + IC-IR。
    • 90. 发明专利
    • Practical mounting structure of lean sensor
    • LEAN传感器实际安装结构
    • JPS5918447A
    • 1984-01-30
    • JP12771182
    • 1982-07-23
    • Hitachi Ltd
    • SUZUKI KIYOMITSUMIKI MASAYUKISASAYAMA TAKAOISHIHARA NOBORUHARADA KOUJI
    • G01N27/41G01N27/407G01N27/409
    • G01N27/407
    • PURPOSE:To eliminate the irregularity in sensitivity and to enhance durability, by a method wherein mutual solid electrolyte materials or this electrolyte material and ceramic having coefficient of heat expansion same to that of the aforementioned material are fixedly bonded by interposing amorphous material therebetween as an insert member. CONSTITUTION:In forming an oxygen reference chamber by fixedly adhering an oxygen ion conductive solid electrolyte material 5 having platinum electrodes 6, 7 formed to both surfaces thereof to a cover member 1, an insert member 4 comprising an amorphouse material is inserted between the cover member 1 and the electrolyte material 5 to be fixedly bonded thereto under heating and pressure. The above mentioned insert member 4 comprises a Pt-Si type amorphous material and has a shape of a foil with a thickness of about several mum while the compositional ratio of Pt and Si is selected so as to make the m.p. of the insert material lower than that of the electrolyte material 5 and to make the coefficient of heat expansion almost equal to that of said electrolyte material 5. Heat and pressure bonding at a low temp. is enabled and a mechanically strong bonding layer 8 high in air tightness can be formed.
    • 目的:为了消除灵敏度的不均匀性和提高耐久性,通过将相互固体电解质材料或具有与上述材料相同的热膨胀系数的电解质材料和陶瓷固定地粘结在其间的非晶材料作为插入物的方法 会员。 构成:通过将形成在其两个表面上的具有铂电极6,7的氧离子导电固体电解质材料5固定地粘附到盖构件1上来形成氧参考室,将包括一个顶棚材料的插入构件4插入到盖构件 1和电解质材料5在加热和加压下固定在其上。 上述插入构件4包括Pt-Si型无定形材料,并且具有厚度约几μm的箔的形状,同时选择Pt和Si的组成比,使得m.p。 的插入材料低于电解质材料5,并且使热膨胀系数几乎等于所述电解质材料5的热膨胀系数。 并且可以形成高气密性的机械强度粘合层8。