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81. 发明授权

US07686875B2 Electroless deposition from non-aqueous solutions 有权
标题翻译：从非水溶液中进行无电沉积
公开(公告)号：US07686875B2
公开(公告)日：2010-03-30
申请号：US12338998
申请日：2008-12-18
申请人： Eugenijus Norkus , Jane Jaciauskiene , Yezdi Dordi
发明人： Eugenijus Norkus , Jane Jaciauskiene , Yezdi Dordi
IPC分类号： C23C18/38
CPC分类号： C23C18/40 , C23C18/48
摘要： A non-aqueous electroless copper plating solution that includes an anhydrous copper salt component, an anhydrous cobalt salt component, a non-aqueous complexing agent, and a non-aqueous solvent is provided.
摘要翻译：提供了包含无水铜盐组分，无水钴盐组分，非水络合剂和非水溶剂的非水性无电镀铜溶液。

82. 发明申请

US20090134520A1 PROCESS INTEGRATION SCHEME TO LOWER OVERALL DIELECTRIC CONSTANT IN BEOL INTERCONNECT STRUCTURES 审中-公开
标题翻译：过程集成方案降低BEOL互连结构中的总体电介质常数
公开(公告)号：US20090134520A1
公开(公告)日：2009-05-28
申请号：US12366235
申请日：2009-02-05
申请人： Nicolas Bright , David Hemker , Fritz C. Redeker , Yezdi Dordi
发明人： Nicolas Bright , David Hemker , Fritz C. Redeker , Yezdi Dordi
IPC分类号： H01L23/52
CPC分类号： H01L21/76822 , H01L21/76805 , H01L21/76807 , H01L21/76816 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L2924/0002 , H01L2924/00
摘要： Back-End of Line (BEoL) interconnect structures, and methods for their manufacture, are provided. The structures are characterized by narrower conductive lines and reduced overall dielectric constant values. Conformal diffusion barrier layers, and selectively formed capping layers, are used to isolate the conductive lines and vias from surrounding dielectric layers in the interconnect structures. The methods of the invention employ techniques to narrow the openings in photoresist masks in order to define narrower vias. More narrow vias increase the amount of misalignment that can be tolerated between the vias and the conductive lines.
摘要翻译：提供了后端（BEoL）互连结构及其制造方法。这些结构的特征在于导线越窄，总体介电常数值越小。保形扩散阻挡层和选择性形成的覆盖层用于将导线和通孔与互连结构中的周围电介质层隔离。本发明的方法采用技术来缩小光致抗蚀剂掩模中的开口，以便限定更窄的通孔。更窄的通孔增加了通孔和导电线之间可以容许的不对准量。

83. 发明申请

US20080254621A1 Wafer Electroless Plating System and Associated Methods 有权
标题翻译：晶圆化学镀系统及相关方法
公开(公告)号：US20080254621A1
公开(公告)日：2008-10-16
申请号：US11735984
申请日：2007-04-16
申请人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
发明人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
IPC分类号： H01L21/44 , B05C11/11 , B05C13/00
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1632 , H01L21/76873
摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).
摘要翻译：公开了一种用于晶片无电镀的干/干输出系统。该系统包括用于晶片入口/出口和干燥操作的上部区域。靠近头部设置在上部区域以执行干燥操作。该系统还包括用于无电镀操作的下部区域。下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。系统是环境控制的。此外，系统与环境受控的托管传输模块（MTM）接口。

84. 发明申请

US20080227369A1 Apparatus and Method for Confined Area Planarization 有权
标题翻译：密闭面平面化装置与方法
公开(公告)号：US20080227369A1
公开(公告)日：2008-09-18
申请号：US12129612
申请日：2008-05-29
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： B24B57/02 , H05K3/07 , C25F3/00
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

85. 发明申请

US20080085370A1 ELECTROLESS PLATING METHOD AND APPARATUS 有权
标题翻译：电镀方法和装置
公开(公告)号：US20080085370A1
公开(公告)日：2008-04-10
申请号：US11539155
申请日：2006-10-05
申请人： William Thie , John M. Boyd , Yezdi Dordi , Fritz C. Redeker
发明人： William Thie , John M. Boyd , Yezdi Dordi , Fritz C. Redeker
IPC分类号： B05D1/18 , B05C3/00
CPC分类号： C23C18/1617 , C23C18/163 , C23C18/1678 , H01L21/67092
摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.
摘要翻译：提供无电镀系统。该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面使得电镀溶液接触两个顶表面。还提供了一种将无电镀液施加到基底上的方法。

86. 发明授权

US07108591B1 Compliant wafer chuck 失效
标题翻译：符合晶圆卡盘
公开(公告)号：US07108591B1
公开(公告)日：2006-09-19
申请号：US10816418
申请日：2004-03-31
申请人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
发明人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
IPC分类号： B24B5/02 , B24B7/04 , B24B1/00
CPC分类号： B24B37/30
摘要： A semiconductor substrate support is provided. The semiconductor substrate support includes a chuck configured to change between a compliant state and a rigid state. An electromagnetic field source configured to apply an electromagnetic field to the chuck is included. The electromagnetic field causes the chuck to change from the compliant state to the rigid state. A method for supporting a semiconductor substrate and a system for cleaning a substrate and an apparatus are also provided.
摘要翻译：提供半导体衬底支撑。半导体衬底支撑件包括构造成在柔顺状态和刚性状态之间变化的卡盘。包括被配置为向卡盘施加电磁场的电磁场源。电磁场使卡盘从顺从状态转变为刚性状态。还提供了一种用于支撑半导体衬底的方法和用于清洁衬底和装置的系统。

87. 发明申请

US20060108228A1 Method of stabilizing additive concentrations in an electroplating bath for interconnect formation 审中-公开
标题翻译：在电镀槽中稳定添加剂浓度以进行互连形成的方法
公开(公告)号：US20060108228A1
公开(公告)日：2006-05-25
申请号：US11282797
申请日：2005-11-17
申请人： Nicolay Kovarsky , Chunman Yu , Yezdi Dordi
发明人： Nicolay Kovarsky , Chunman Yu , Yezdi Dordi
IPC分类号： C25D21/06
CPC分类号： C25D21/14 , C25D21/18
摘要： Embodiments of the invention may further provide an electrochemical plating cell. The cell includes a fluid basin configured to contain an electrolyte plating solution, a fluid tank in fluid communication with the fluid basin and being configured to supply the electrolyte plating solution thereto, and an electrolyte solution stabilization device in fluid communication with the fluid tank. The stabilization device includes a fluid container having a fluid inlet and a fluid outlet, and an absorbent material positioned in the fluid container in a fluid path between the fluid inlet and the fluid outlet, wherein the absorbent material is configured to leach a solution additive into the electrolyte plating solution to maintain the solution additive within a processing window during an electrochemical plating process.
摘要翻译：本发明的实施例还可以提供一种电化学电镀单元。电池包括流体池，其构造成容纳电解液电镀溶液，与流体池流体连通的流体槽，并且被配置为向其提供电解镀液，以及与流体槽流体连通的电解液稳定装置。稳定装置包括具有流体入口和流体出口的流体容器和位于流体容器内的流体入口和流体出口之间的流体路径中的吸收材料，其中吸收材料构造成将溶液添加剂浸出在电化学电镀工艺期间将电解液电镀液维持在处理窗口内的溶液添加剂。

88. 发明授权

US06635157B2 Electro-chemical deposition system 失效
公开(公告)号：US06635157B2
公开(公告)日：2003-10-21
申请号：US09867780
申请日：2001-05-29
申请人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
发明人： Yezdi Dordi , Donald J. Olgado , Ratson Morad , Peter Hey , Mark Denome , Michael Sugarman , Mark Lloyd , Joseph Stevens , Dan Marohl , Ho Seon Shin , Eugene Ravinovich , Robin Cheung , Ashok K. Sinha , Avi Tepman , Dan Carl , George Birkmaier
IPC分类号： C25D1700
CPC分类号： H01L21/6723 , C25D7/123 , C25D17/001 , C25D17/06 , C25D21/02 , C25D21/12 , H01L21/2885 , H01L21/67028 , H01L21/67051 , H01L21/6708 , H01L21/67126 , H01L21/67167 , H01L21/67184 , H01L21/67745 , H01L21/68707 , H01L21/68721 , H01L21/68728 , H01L21/68742 , H05K3/241
摘要： The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.

89. 发明授权

US06494219B1 Apparatus with etchant mixing assembly for removal of unwanted electroplating deposits 失效
标题翻译：具有用于去除不需要的电镀沉积物的蚀刻剂混合组件的装置
公开(公告)号：US06494219B1
公开(公告)日：2002-12-17
申请号：US09614406
申请日：2000-07-12
申请人： Radha Nayak , Yezdi Dordi , Joseph Stevens , Peter Hey
发明人： Radha Nayak , Yezdi Dordi , Joseph Stevens , Peter Hey
IPC分类号： B08B308
CPC分类号： H01L21/6708 , C23F1/08 , H01L21/02087 , H01L21/2885 , H01L21/32134 , H01L21/67051 , H01L21/67207 , Y10S134/902
摘要： Embodiments of the invention generally provide an etchant mixing assembly for a semiconductor processing system. The etchant mixing assembly includes at least one acid source, at least one oxidizer source, a mixing tank selectively in fluid communication with the at least one acid source and the at least one oxidizer source, and a mixed etchant tank in fluid communication with the mixing tank. Additionally, a system controller configured to sense a low level of fluid in the mixed etchant tank, cause a fresh fluid solution to be mixed in the mixing tank, and cause the fresh fluid solution to the communicated to the mixed etchant tank is also provided in the etchant mixing assembly.
摘要翻译：本发明的实施例通常提供用于半导体处理系统的蚀刻剂混合组件。蚀刻剂混合组件包括至少一个酸源，至少一个氧化剂源，选择性地与至少一个酸源和至少一个氧化剂源流体连通的混合罐，以及与混合物流体连通的混合蚀刻剂罐坦克。另外，系统控制器被配置为感测混合蚀刻剂槽中的低水平的流体，使得新鲜的流体溶液在混合罐中混合，并且使新鲜的流体溶液与混合的蚀刻剂槽相连，也提供在蚀刻剂混合组件。

90. 发明授权

US06436267B1 Method for achieving copper fill of high aspect ratio interconnect features 有权
标题翻译：实现高宽比互连特征铜填充的方法
公开(公告)号：US06436267B1
公开(公告)日：2002-08-20
申请号：US09650108
申请日：2000-08-29
申请人： Daniel A. Carl , Barry Chin , Liang Chen , Robin Cheung , Peijun Ding , Yezdi Dordi , Imran Hashim , Peter Hey , Ashok K. Sinha
发明人： Daniel A. Carl , Barry Chin , Liang Chen , Robin Cheung , Peijun Ding , Yezdi Dordi , Imran Hashim , Peter Hey , Ashok K. Sinha
IPC分类号： C23C2802
CPC分类号： H01L21/2885 , H01L21/76877
摘要： One aspect of the invention provides a consistent metal electroplating technique to form void-less metal interconnects in sub-micron high aspect ratio features on semiconductor substrates. One embodiment of the invention provides a method for filling sub-micron features on a substrate, comprising reactive precleaning the substrate, depositing a barrier layer on the substrate using high density plasma physical vapor deposition; depositing a seed layer over the barrier layer using high density plasma physical vapor deposition; and electro-chemically depositing a metal using a highly resistive electrolyte and applying a first current density during a first deposition period followed by a second current density during a second period.
摘要翻译：本发明的一个方面提供一致的金属电镀技术，以在半导体衬底上形成亚微米高纵横比特征的无空隙金属互连。本发明的一个实施方案提供了一种用于在基底上填充亚微米特征的方法，包括反应性预清洗基底，使用高密度等离子体物理气相沉积在基底上沉积阻挡层; 使用高密度等离子体物理气相沉积在阻挡层上沉积种子层; 以及使用高电阻电解质电化学沉积金属，并且在第一周期期间在第一沉积期间施加第一电流密度，然后施加第二电流密度。

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