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81. 发明申请

US20080179666A1 SEMICONDUCTOR DEVICE HAVING A TRENCH GATE AND METHOD FOR MANUFACTURING 审中-公开
标题翻译：具有TRENCH门的半导体器件和制造方法
公开(公告)号：US20080179666A1
公开(公告)日：2008-07-31
申请号：US12019295
申请日：2008-01-24
申请人： Christian Foerster , Georg Ehrentraut , Frank Pfirsch , Thomas Raker
发明人： Christian Foerster , Georg Ehrentraut , Frank Pfirsch , Thomas Raker
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/4236 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/66348 , H01L29/66666 , H01L29/66727 , H01L29/66734 , H01L29/7397 , H01L29/7813 , H01L29/7827
摘要： A semiconductor device having a trench gate and method for manufacturing is disclosed. One embodiment includes a first semiconductor area and a second semiconductor area, a semiconductor body area between the first semiconductor area and the second semiconductor area, and a gate arranged in a trench and separated from the semiconductor body by an insulation layer, wherein the trench has a top trench portion which extends from the semiconductor surface at least to a depth which is greater than a depth of the first semiconductor area, wherein the trench further has a bottom trench portion extending subsequent to the top trench portion at least up to the second semiconductor area, and wherein the top trench portion has a first lateral dimension and the bottom trench portion has a second lateral dimension which is greater than the first lateral dimension.
摘要翻译：公开了一种具有沟槽栅的半导体器件及其制造方法。一个实施例包括第一半导体区域和第二半导体区域，第一半导体区域和第二半导体区域之间的半导体主体区域以及布置在沟槽中并且通过绝缘层与半导体本体分离的栅极，其中沟槽具有至少从所述半导体表面延伸到比所述第一半导体区域的深度大的深度的顶部沟槽部分，其中所述沟槽还具有在所述顶部沟槽部分之后延伸的底部沟槽部分，所述顶部沟槽部分至少直到所述第二半导体并且其中顶部沟槽部分具有第一横向尺寸，并且底部沟槽部分具有大于第一横向尺寸的第二横向尺寸。

82. 发明申请

US20080122001A1 INTEGRATED CIRCUIT HAVING DOPED SEMICONDUCTOR BODY AND METHOD 有权
标题翻译：具有掺杂半导体体的集成电路和方法
公开(公告)号：US20080122001A1
公开(公告)日：2008-05-29
申请号：US11944903
申请日：2007-11-26
申请人： Frank Pfirsch , Hans-Joachim Schulze , Franz-Josef Niedernostheide
发明人： Frank Pfirsch , Hans-Joachim Schulze , Franz-Josef Niedernostheide
IPC分类号： H01L29/94 , H01L21/22
CPC分类号： H01L29/7802 , H01L21/263 , H01L21/266 , H01L21/322 , H01L29/0634 , H01L29/1095 , H01L29/66712
摘要： An integrated circuit and method for making an integrated circuit including doping a semiconductor body is disclosed. One embodiment provides defect-correlated donors and/or acceptors. The defects required for this are produced by electron irradiation of the semiconductor body. Form defect-correlated donors and/or acceptors with elements or element compounds are introduced into the semiconductor body.
摘要翻译：公开了一种用于制造包括掺杂半导体本体的集成电路的集成电路和方法。一个实施例提供缺陷相关的供体和/或受体。所需的缺陷是通过半导体本体的电子照射产生的。具有元素或元素化合物的形式缺陷相关的供体和/或受体被引入半导体体。

83. 发明申请

US20070190714A1 Trench transistor and method for fabricating a trench transistor with high-energy-implanted drain 有权
标题翻译：沟槽晶体管和制造具有高能量注入漏极的沟槽晶体管的方法
公开(公告)号：US20070190714A1
公开(公告)日：2007-08-16
申请号：US11606628
申请日：2006-11-30
申请人： Franz Hirler , Frank Pfirsch
发明人： Franz Hirler , Frank Pfirsch
IPC分类号： H01L21/8238 , H01L29/00
CPC分类号： H01L21/26513 , H01L29/0847 , H01L29/0878
摘要： A method is disclosed for fabricating a trench transistor, in which there are formed, within an epitaxial layer deposited above a substrate of a first conductivity type, a trench and, within the trench, a gate dielectric and a gate electrode and, in a body region of a second conductivity type adjoining the trench a source region of the first conductivity type, a drift region of the first conductivity type forming a drain zone being formed at the end of the junction between the substrate and the epitaxial layer by means of one or more high-energy implantations, the lower end of the trench projecting into said drift region, and to a trench transistor of this type formed as a low-voltage transistor.
摘要翻译：公开了一种用于制造沟槽晶体管的方法，其中在形成于外延层内的外延层中形成第一导电类型的衬底，沟槽和沟槽内的栅极电介质和栅电极，并且在体内第二导电类型的与第一导电类型的源极区相邻的第二导电类型的区域，形成漏极区的第一导电类型的漂移区域通过一个或多个第一导电类型的衬底和外延层之间的结的端部形成更高能量的注入，突出到所述漂移区域的沟槽的下端，以及形成为低压晶体管的这种类型的沟槽晶体管。

84. 发明申请

US20070181943A1 Lateral power transistor and method for producing same 有权
标题翻译：横向功率晶体管及其制造方法
公开(公告)号：US20070181943A1
公开(公告)日：2007-08-09
申请号：US11653089
申请日：2007-01-12
申请人： Frank Pfirsch
发明人： Frank Pfirsch
IPC分类号： H01L29/76
CPC分类号： H01L29/7825 , H01L29/0634 , H01L29/0657 , H01L29/402 , H01L29/407 , H01L29/41766 , H01L29/66325 , H01L29/66348 , H01L29/66681 , H01L29/66704 , H01L29/7393 , H01L29/7816
摘要： A power transistor includes a semiconductor layer an electrode layer. The semiconductor layer having a source zone, a drain zone spaced apart from the source zone in a lateral direction, a drift zone adjacent to the drain zone, and a body zone. The body zone is interposed between the drift zone and the source zone. The electrode layer is dielectrically insulated from the semiconductor layer, and includes a gate electrode divided into at least two sections and a field plate. The field plate is arranged at a first height level relative to the semiconductor layer. A first gate electrode section is arranged at least partially at a second height level, which is lower than the first height level relative to the semiconductor layer. A second gate electrode section, which is laterally displaced from the first gate electrode section, is disposed at a first intermediate level arranged between the first and second height levels.
摘要翻译：功率晶体管包括半导体层和电极层。所述半导体层具有源极区域，在横向方向上与所述源极区域隔开的漏极区域，与所述排出区域相邻的漂移区域以及主体区域。体区位于漂移区和源区之间。电极层与半导体层介电绝缘，并且包括划分为至少两个部分的栅电极和场板。场板相对于半导体层布置在第一高度水平。第一栅极电极部分至少部分地布置在相对于半导体层低于第一高度水平的第二高度水平处。从第一栅极电极部分横向移位的第二栅极电极部分设置在布置在第一和第二高度电平之间的第一中间电平处。

85. 发明申请

US20060273346A1 Edge structure with voltage breakdown in the linear region 有权
公开(公告)号：US20060273346A1
公开(公告)日：2006-12-07
申请号：US11439452
申请日：2006-05-23
申请人： Frank Pfirsch
发明人： Frank Pfirsch
IPC分类号： H01L29/06
CPC分类号： H01L29/7397 , H01L29/0615 , H01L29/0619 , H01L29/404
摘要： One aspect of the invention relates to an edge structure for a semiconductor component having two electrodes arranged opposite one another on opposite sides of a semiconductor body having a doped zone of the first charge carrier type. The semiconductor body has at least one doped zone of the second charge carrier type extending from a surface into the depth of the semiconductor body and serving for forming a pn junction located in a central region surrounded by an edge region between the two electrodes. The edge region has at least one rectilinear edge section and at least one curved edge section and is formed in such a way that a breakdown voltage in the at least one rectilinear edge section is less than a breakdown voltage in the at least one curved edge section.

86. 发明申请

US20050205962A1 Trench transistor and method for fabricating a trench transistor with high-energy-implanted drain 审中-公开
标题翻译：沟槽晶体管和制造具有高能量注入漏极的沟槽晶体管的方法
公开(公告)号：US20050205962A1
公开(公告)日：2005-09-22
申请号：US11023038
申请日：2004-12-23
申请人： Franz Hirler , Frank Pfirsch
发明人： Franz Hirler , Frank Pfirsch
IPC分类号： H01L21/265 , H01L21/336 , H01L29/08 , H01L29/15 , H01L31/0312 , H01L29/00
CPC分类号： H01L21/26513 , H01L29/0847 , H01L29/0878
摘要： The invention relates to a method for fabricating a trench transistor, in which there are formed, within an epitaxial layer (11, 11′) deposited above a substrate (10) of a first conductivity type (n), a trench (14) and, within the trench (14), a gate dielectric (15) and a gate electrode (16) and, in a body region (20) of a second conductivity type (p) adjoining the trench (14) a source region (13) of the first conductivity type (n), a drift region (12) of the first conductivity type (n) forming a drain zone being formed at the end of the junction between the substrate (10) and the epitaxial layer (11, 11′) by means of one or more high-energy implantations, the lower end (U) of the trench (14) projecting into said drift region (12), and to a trench transistor of this type formed as a low-voltage transistor.
摘要翻译：本发明涉及一种制造沟槽晶体管的方法，其中形成在沉积在第一导电类型（n）的衬底（10）上方的外延层（11,11'），沟槽（14）和，在沟槽（14）内，栅极电介质（15）和栅电极（16），并且在与沟槽（14）相邻的第二导电类型（p）的体区（20）中，源区（13）的第一导电类型（n）的第一导电类型（n）的漂移区域（12）形成在衬底（10）和外延层（11,11'）之间的接合端的端部处，）通过一个或多个高能量注入，突出到所述漂移区（12）中的沟槽（14）的下端（U）以及形成为低电压晶体管的这种类型的沟槽晶体管。

87. 发明授权

US06815769B2 Power semiconductor component, IGBT and field-effect transistor 有权
标题翻译：功率半导体元件，IGBT和场效晶体管
公开(公告)号：US06815769B2
公开(公告)日：2004-11-09
申请号：US10352825
申请日：2003-01-28
申请人： Frank Pfirsch , Carsten Schäffer
发明人： Frank Pfirsch , Carsten Schäffer
IPC分类号： H01L2976
CPC分类号： H01L29/402 , H01L29/0619 , H01L29/407 , H01L29/41741 , H01L29/66348 , H01L29/7397
摘要： A trench power semiconductor component, in particular an IGBT, has an electrode (4) in a trench (3) that is laterally divided into a section (10) that serves as a gate and a section (11) that is connected to the source metallization (6). A method for making the trench power semiconductor component is also included.
摘要翻译：沟槽功率半导体元件，特别是IGBT，在沟槽（3）中具有横向分为用作栅极的部分（10）和连接到源极的部分（11）的电极（4）金属化（6）。还包括制造沟槽功率半导体部件的方法。

88. 发明授权

US06803609B1 Bipolar high-voltage power component 有权
标题翻译：双极高压电源组件
公开(公告)号：US06803609B1
公开(公告)日：2004-10-12
申请号：US09603748
申请日：2000-06-26
申请人： Wolfgang Werner , Frank Pfirsch
发明人： Wolfgang Werner , Frank Pfirsch
IPC分类号： H01L2974
CPC分类号： H01L29/861 , H01L29/0634 , H01L29/1095 , H01L29/7395
摘要： A bipolar high-voltage power component, in particular an IGBT, includes a semiconductor body on which at least two mutually spaced apart electrodes are provided, between which a drift path is formed in a semiconductor region of a first conduction type. Floating zones of a second conduction type, opposite the first conduction type, are provided in the semiconductor region. When the power component is switched on or switched off, the floating zones respectively emit charge carriers of the second conduction type into the semiconductor region or take up the charge carriers from the semiconductor region. The floating zones are connected, through a respective MOS transistor with a channel of the second conduction type or a bipolar transistor with a base of the first conduction type, to active regions of the power component which are connected to the two electrodes.
摘要翻译：双极型高压功率元件，特别是IGBT，包括：半导体体，其上设置有至少两个相互间隔开的电极，在第一导电类型的半导体区域之间形成有漂移路径。在半导体区域中提供与第一导电类型相反的第二导电类型的浮动区域。当电源组件接通或断开时，浮动区域分别将第二导电类型的电荷载流子引入半导体区域或从半导体区域吸收电荷载流子。浮动区域通过具有第二导电类型的沟道的相应MOS晶体管或具有第一导电类型的基极的双极晶体管连接到连接到两个电极的功率部件的有源区域。

89. 发明授权

US06531748B2 Semiconductor power component with a reduced parasitic bipolar transistor 失效
公开(公告)号：US06531748B2
公开(公告)日：2003-03-11
申请号：US09853522
申请日：2001-05-11
申请人： Frank Pfirsch
发明人： Frank Pfirsch
IPC分类号： H01L2972
CPC分类号： H01L29/7802 , H01L29/165 , H01L29/205 , H01L29/267
摘要： A semiconductor power component has a MOS structure in which the source region is formed of a material whose band gap is smaller than the band gap of the material of the channel region. This measure reduces the gain of a parasitic bipolar transistor.

90. 发明授权

US06465869B2 Compensation component and process for producing the compensation component 有权
标题翻译：补偿组件和补偿组件的制造过程
公开(公告)号：US06465869B2
公开(公告)日：2002-10-15
申请号：US09867502
申请日：2001-05-30
申请人： Dirk Ahlers , Frank Pfirsch
发明人： Dirk Ahlers , Frank Pfirsch
IPC分类号： H01L2900
CPC分类号： H01L29/7816 , H01L29/0634 , H01L29/66674 , H01L29/66712 , H01L29/7801 , H01L29/7802
摘要： A compensation component includes a drift path formed of p-conducting and n-conducting layers which are led around or along a trench. A process for producing the compensation component is also provided.
摘要翻译：补偿部件包括由p导电层和n导电层形成的漂移路径，其被引导在沟槽周围或沿着沟槽。还提供了一种制造补偿部件的方法。

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