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81. 发明专利

JPS63187656A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS63187656A
公开(公告)日：1988-08-03
申请号：JP1979587
申请日：1987-01-30
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： C25D7/00 , C25D7/12 , H01L23/50
摘要： PURPOSE:To improve solderability by coating the surface of a projecting lead with at least one kind of Ni, Co, In, Zn or Pb or these alloy and coating the upper section of these metal or alloy with an organic film melting an a soldering temperature in 0.1-50mum. CONSTITUTION:A lead frame consisting of a Cu-2% Sn-0.15 Cr alloy is used, a standard logic IC is mounted, connected and sealed with an epoxy resin so that an outer lead protruded, and a sealing section is deburred and an outer lead section is subjected to pickling. The surface of the projecting lead is coated with at least one kind of a noble metal, Ni, Co, In, Zn or Pb or these alloy, and an organic film melting or decomposing at a practical soldering temperature is shaped onto these metal or alloy in thickness of 0.1-50mum.

82. 发明专利

JPS63187655A LEAD FRAME FOR ELECTRONIC COMPONENT 失效
公开(公告)号：JPS63187655A
公开(公告)日：1988-08-03
申请号：JP1979487
申请日：1987-01-30
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L23/28 , H01L23/50
摘要： PURPOSE:To improve solderability by coating an outer lead with a Pb alloy containing not less than 60 wt. % Pb in 1.5mum or more and an Sn alloy containing not less than 40 wt. % Sn in thickness of 1mum or more in succession. CONSTITUTION:The upper section of a base body 1 is coated with an A layer 2 consisting of Pb or a Pb alloy containing not less than 60 wt. % Pb in thickness of 1.5mum or more and the upper section of the A layer 2 with a B layer 3 composed of Sn or an Sn alloy containing not less than 40 wt. % Sn in thickness of 1mum or more before mounting as shown in the figure (a), an Sn section in the A layer 2 reacts with Cu in the base body 1 to form a Cu.Sn compound layer 4 such as Cu6Sn5, Cu3Sn, etc., as shown in the figure (b) by heating at the time of mounting, and a residual Pb section covers the upper section of the Cu.Sn compound layer 4 as a Pb-rich layer 5. The Pb-rich layer 5 is made up of an alpha phase including Pb or a minute quantity of Sn, and functions as a barrier inhibiting the diffusion of Cu. The B layer 3 shapes the reacting layer 6 of the A layer and the B layer on a boundary with the Pb-rich layer 5, and partial Sn forms a compound with Cu, but the effect of these formation has no effect on the surface, thus holding excellent solder wettability.

83. 发明专利

JPS6365035A FINE COPPER WIRE AND ITS PRODUCTION 失效
公开(公告)号：JPS6365035A
公开(公告)日：1988-03-23
申请号：JP20889386
申请日：1986-09-05
申请人： FURUKAWA ELECTRIC CO LTD , FURUKAWA SPECIAL METAL COATED
发明人： TANIGAWA TORU , SHIGA SHOJI , KURIHARA MASAAKI , OKUDA KOZO , KAGA ICHIRO
IPC分类号： C22C9/00 , C22F1/00 , C22F1/08 , H01B1/02
摘要： PURPOSE:To manufacture a fine copper wire excellent in deformability and having high wire strength, by casting an ingot having a specific composition consisting of Ti, Cr, Mn, Fe, Ni, Co, and Cu under vacuum or under nonoxidizing atmosphere and by subjecting the above ingot to proper working and annealing. CONSTITUTION:The ingot consisting of 0.1-4.5ppm of one or more elements among Ti, Cr, Mn, Fe, Ni, and Co and the balance Cu is cast under vacuum or nonoxidizing atmosphere. It is preferable that Cu of >=99.999wt% purity, desirably of >=about 99.9999 purity, is used as the above Cu. The above ingot is repeatedly subjected to wire drawing and annealing treatment to be formed into the prescribed wire diameter. At this time, at least final draft before final annealing is regulated to 70-99.99%, and further, annealing is applied at about 150-400 deg.C for a prescribed time or, after that, working is applied at 1-5% draft, so that elongation is adjusted to 2-20%. In this way, the fine copper wire combining superior deformability with high wire strength, free from softening at ordinary temp. and sag of loop, having excellent shape of ball, and suitable for ball bonding can be obtained.

84. 发明专利

JPS62141747A SEMICONDUCTOR LEAD FRAME 失效
公开(公告)号：JPS62141747A
公开(公告)日：1987-06-25
申请号：JP28251085
申请日：1985-12-16
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , TANIGAWA TORU , KURIHARA MASAAKI
IPC分类号： H01L23/50 , C22C9/04 , H01L23/495
摘要： PURPOSE:To enable a lead frame to be made from the least expensive material, Cu-Zn alloy while improving its corrosion resistance and heat conductivity, by coating at least a tab and an inner lead tip of a frame-shaped substrate of a Cu alloy containing 20-37% in weight of Zn with a layer of Cu or a Cu alloy having a specified electrical conductivity. CONSTITUTION:At least a tab and an inner lead tip of a frame-shaped substrate of a Cu alloy containing 25-37% of Zn such as brass, and preferably the whole surface thereof is coated with Cu or a Cu alloy having an electrical conductivity of 80% IACS or over directly or through an intermediate layer of Ni, Co or an alloy thereof. Said Cu or Cu alloy having an electrical conductivity of 80% IACS or over is selected from the group consisting of pure Cu, Cu-0.1% Zr alloy, Cu-0.1-0.3% Sn alloy, Cu-0.05% Ag alloy, etc. The Ni, Co or alloy thereof is selected from the group consisting of Ni, Co, Ni-Co alloy, Ni-Fe alloy, Ni-Pd alloy, Ni-P alloy, Ni-B alloy, Co-Pd alloy, Co-Fe alloy, etc.

85. 发明专利

JPS6229154A FINE BONDING LINE FOR SEMICONDUCTOR 失效
公开(公告)号：JPS6229154A
公开(公告)日：1987-02-07
申请号：JP16684385
申请日：1985-07-30
申请人： FURUKAWA ELECTRIC CO LTD
发明人： TANIGAWA TORU , SHIGA SHOJI , SUZUKI HIROKI , KURIHARA MASAAKI
IPC分类号： C23F11/00 , H01L21/60 , H01L23/48
摘要： PURPOSE:To realize a fine bonding line capable of stable bonding without reducing its rust-resistant capability by a method wherein a specified mercaptobenzene compound is applied to the surface of a fine Cu or Cu-alloy line. CONSTITUTION:A mercaptobenzene compound whose chemical formula is indicat ed here is applied to the surface of a fine Cu or Cu-alloy line. In the formula, the X stands for O, S, or NH and the R for an aliphatic hydrocarbon group containing 1 - 8C atoms, carboxyl group, amino group, nitro group, halogen group, or H. Such a mercaptobenzene compound meets the purpose as 2-mercap tobenzoxazole, 2-mercaptobenzothiazole, or 2-mercaptobenzimidazole. For the application or attachment of such a compound to a fine Cu or Cu-alloy line, 0.05-0.5w/u% of the compound is dissolved in a solvent, toluene for example. It is preferred that the fine Cu or Cu-alloy is placed in the solution for 5-30min and then allowed to dry.

86. 发明专利

JPH06122172A ORGANIC COATED ALUMINUM MATERIAL EXCELLENT IN SPOT RESISTANCE WELDABILITY AND ALUMINUM ELUTION RESISTANCE 失效
公开(公告)号：JPH06122172A
公开(公告)日：1994-05-06
申请号：JP26488192
申请日：1992-10-02
申请人： KAWASAKI STEEL CO , FURUKAWA ALUMINIUM
发明人： NISHIYAMA NAOKI , TOTSUKA NOBUO , UESUGI KOJI , MABUCHI MASAKI , KURIHARA MASAAKI , NANBAE MOTOHIRO
IPC分类号： B23K11/18 , B23K103/10 , B32B15/01 , B32B15/08 , C23F1/22 , C23F1/36
摘要： PURPOSE:To obtain a material excellent in spot resistance weldability and the elution resistance of aluminum into a zinc phosphate treatment soln. by forming an org. resin film with a specific thickness on both surfaces of an alumium material subjected to activation treatment. CONSTITUTION:An org. resin is applied to both surfaces of an aluminum material subjected to activation treatment in a thickness of 0.01-3.0mum as a dry film. The activation treatment is either one of treatment removing an alumina surface layer by alkali etching treatment, pickling treatmet mainly removing a magnesia layer in an acidic aqueous soln. containing a mineral acid and treatment removing almost all of a surface oxide layer by pickling treatment aftewr alkali etching treatment. As the org. resin, an epoxy resin, an alkyd resin, an acrylic resin and a urethane resin are pref. By this constitution, the life of an electrode at the time of spot resistance welding can be improved.

87. 发明专利

JPH05320934A ALUMINUM MATERIAL EXCELLENT IN FORMABILITY, WELDABILITY AND CORROSION RESISTANCE 失效
公开(公告)号：JPH05320934A
公开(公告)日：1993-12-07
申请号：JP15759992
申请日：1992-05-25
申请人： FURUKAWA ALUMINIUM , KAWASAKI STEEL CO
发明人： ISHIDA YOJI , NANBAE MOTOHIRO , TANI TOSHIO , KURIHARA MASAAKI , KATO OSAMU , TOTSUKA NOBUO , NISHIYAMA NAOKI
IPC分类号： B32B15/08 , B32B15/20 , C23C22/00
摘要： PURPOSE:To improve formability, weldability and corrosion resistance by forming a film of a specified metal compd. on the surface of an Al material and forming a resin film containing a lubricant and conductive fine particles to specified thickness thereon. CONSTITUTION:A film of a compd. containing at least one kind of metal selected from groups II and IV is formed on the surface of an Al material. Then, a resin film is formed to 0.05-3.0mum dry thickness thereon. The resin consists of a mixture of 100 pts.wt. of resin having hydroxyl groups and carboxyl groups, 0.5-20 pts.wt. of powdery solid lubricant, and 1.0-40 pts.wt. of conductive fine particles. The first layer is preferably formed in an amt. about 5-200mg/m (calculated as metal) on the surface. The powdery lubricant in the second layer is at least one of polyolefin wax, fluorine-base resin powder and carbon powder having 0.05-10mum average particle size and the average particle size is preferably about 1.0-10 times as the dry film thickness of the resin.

88. 发明专利

JP2000096164A COPPER ALLOY FOR ELECTRONIC APPARATUS 失效
公开(公告)号：JP2000096164A
公开(公告)日：2000-04-04
申请号：JP27237098
申请日：1998-09-28
申请人： FURUKAWA ELECTRIC CO LTD
发明人： HIRAI TAKAO , KURIHARA MASAAKI , MIHARA KUNITERU
IPC分类号： H01L23/48 , C22C9/04
摘要： PROBLEM TO BE SOLVED: To allow a copper alloy to sufficiently be applied even to a multipin lead frame or the like by controlling the crystal grain size of an alloy contg. specified ratios of Zn and Si, moreover contg. at least one kind among Bi, Se, Ca, Sr and rare earth elements by specified ratios in total, and the balance Cu with inevitable impurities to the specified one. SOLUTION: The crystal grain size of a copper alloy contg., by weight, 5 to 35% Zn and 0.5 to 3% Si, furthermore contg. at least one kind among Bi, Se, Ca, Sr and rare earth elements by 0.001 to 0.5% in total, and the balance Cu with inevitable impurities is preferably controlled to 5 to 35 μm. This copper alloy uses a Cu-Zn alloy as a base, and stress corrosion cracking as its weak point is improved by adding a suitable amt. of Si and optimumly controlling the crystal grain size therein. Zn improves its punching workability. Bi, Se, Ca, Sr and rare earth elements moreover improve the punching workability. Furthermore, Si contributes to the improvement of its strength, and the optimization of the crystal grain size improves its bending workability.

89. 发明专利

JP2000038627A COPPER ALLOY FOR SEMICONDUCTOR LEAD FRAME 失效
公开(公告)号：JP2000038627A
公开(公告)日：2000-02-08
申请号：JP20640598
申请日：1998-07-22
申请人： FURUKAWA ELECTRIC CO LTD
发明人： KURIHARA MASAAKI , HIRAI TAKAO , EGUCHI TATSUHIKO
IPC分类号： C22C9/04
摘要： PROBLEM TO BE SOLVED: To provide a copper alloy for a semiconductor lead frame excellent in strength, electric conductivity, bending workability, punching workability, stress corrosion cracking resistance and production workability. SOLUTION: This is a copper alloy contg., by weight, 5 to = two kinds selected from the groups of Pb, Bi, Se, Te, Ca, Sr and misch metal by 0.001 to 0.5% in total.

90. 发明专利

JPH11220084A LEAD FRAME 失效
公开(公告)号：JPH11220084A
公开(公告)日：1999-08-10
申请号：JP3241498
申请日：1998-01-30
申请人： FURUKAWA ELECTRIC CO LTD
发明人： SHIGA SHOJI , KURIHARA MASAAKI
IPC分类号： H01L23/50
摘要： PROBLEM TO BE SOLVED: To reduce a popcorn phenomenon after sealing resin in spite of plating by Pd or Pd alloy, by covering a specific region other than one part of the rear surface of a tab part consisting of Cu-Zn alloy containing the specific amount of Zn with the Pd or the Pd alloy for the tab part for mounting a semiconductor device. SOLUTION: The entire upper surface of a lead frame including a tab part 2 and inner and outer leads 3 and 4 is covered with a Pd plating layer 6, and the entire rear surface is set to a non-covering region. A semiconductor device 1 is glued by an epoxy adhesive for mounting onto the tab part 2 being covered with the Pd plating layer 6. Similarly, the inner lead 3 where the upper surface is covered with the Pd plating layer 6 is connected to the electrode of the semiconductor device 1 by an Au wire 5, and sealing is made by epoxy resin 7 except the outer lead 4. In this case, the tab part 2 consists of Cu-Zn alloy containing Zn within the range of 3-40 wt.%, and a specific region other than at least one part of the rear surface of the tab part 2 is covered with Pd or Pd alloy.

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