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81. 发明申请

US20060056474A1 Semiconductor light emitting device and method for manufacturing the same 有权
公开(公告)号：US20060056474A1
公开(公告)日：2006-03-16
申请号：US11220637
申请日：2005-09-08
申请人： Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
发明人： Akira Fujimoto , Koji Asakawa , Kenichi Ohashi
IPC分类号： H01S5/00
CPC分类号： H01L33/22
摘要： In a semiconductor light emitting device, a semiconductor light emitting element has a light extracted surface on which a plurality of convex structures is formed. The convex structures each have a conical mesa portion constituting a refractive index gradient structure, a cylindrical portion constituting a diffraction grating structure, and a conical portion constituting a refractive index gradient structure. The mesa portion, cylindrical portion, and conical portion are arranged in this order from the light extracted surface. The period between the convex structures is longer than 1/(the refractive index of an external medium+the refractive index of the convex structures) of an emission wavelength and equal to or shorter than the emission wavelength. The circle-equivalent average diameter of the cylindrical portion is ⅓ to 9/10 of that of the bottom of the mesa portion.

82. 发明授权

US08896052B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08896052B2
公开(公告)日：2014-11-25
申请号：US13727160
申请日：2012-12-26
申请人： Misako Morota , Hideyuki Nishizawa , Masaya Terai , Shigeki Hattori , Koji Asakawa
发明人： Misako Morota , Hideyuki Nishizawa , Masaya Terai , Shigeki Hattori , Koji Asakawa
IPC分类号： H01L29/792 , H01L21/28 , H01L29/51 , H01L29/66 , H01L27/115
CPC分类号： H01L27/11582 , H01L21/28282 , H01L27/11568 , H01L29/513 , H01L29/518 , H01L29/66833 , H01L29/792
摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film.
摘要翻译：实施例的非易失性半导体存储器件包括：半导体层; 隧道绝缘膜，其形成在所述半导体层上并且包括第一有机分子膜，所述第一有机分子膜包含以烷基分子链为主链的第一有机分子; 形成在隧道绝缘膜上的电荷存储层，电荷存储层由无机材料制成; 形成在电荷存储层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

83. 发明授权

US08890234B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08890234B2
公开(公告)日：2014-11-18
申请号：US13721860
申请日：2012-12-20
申请人： Masaya Terai , Shigeki Hattori , Hideyuki Nishizawa , Koji Asakawa , Tsukasa Tada
发明人： Masaya Terai , Shigeki Hattori , Hideyuki Nishizawa , Koji Asakawa , Tsukasa Tada
IPC分类号： H01L29/792 , H01L21/28 , H01L51/05 , H01L27/115 , H01L51/00
CPC分类号： H01L27/11582 , G11C13/0016 , G11C13/004 , G11C13/0069 , G11C13/0097 , G11C2213/71 , G11C2213/75 , H01L21/28282 , H01L29/4234 , H01L29/51 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/792 , H01L29/7926 , H01L51/0078 , H01L51/0591
摘要： A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film.
摘要翻译：实施例的非易失性半导体存储器件包括：半导体层; 形成在半导体层上的隧道绝缘膜; 形成在所述隧道绝缘膜上的有机分子层，并且包括第一有机分子和具有比所述第一有机分子分子量小的第二有机分子，所述第一有机分子各自包含第一烷基链或第一烷基卤链，所述第一烷基链或第一烷基卤链具有所述第一有机分子各自包含结合到所述第一烷基链或所述第一烷基卤链的另一端的电荷存储部分，所述第二有机分子各自包含第二烷基链或第二烷基卤化物链的一端与隧道绝缘膜结合; 形成在有机分子层上的块绝缘膜; 以及形成在所述块绝缘膜上的控制栅电极。

84. 发明授权

US08687274B2 Short-wavelength polarizing elements and the manufacture and use thereof 有权
标题翻译：短波长偏振元件及其制造和应用
公开(公告)号：US08687274B2
公开(公告)日：2014-04-01
申请号：US12091668
申请日：2006-10-31
申请人： Koji Asakawa , Vincent Pelletier , Mingshaw Wu , Douglas H. Adamson , Richard A. Register , Paul M. Chaikin , Young-Rae Hong
发明人： Koji Asakawa , Vincent Pelletier , Mingshaw Wu , Douglas H. Adamson , Richard A. Register , Paul M. Chaikin , Young-Rae Hong
IPC分类号： G02B5/30
CPC分类号： G02B5/3075 , G02B5/3058
摘要： While gold wire grids have been used to polarize infrared wavelengths for over a hundred years, they are not appropriate for shorter wavelengths due to their large period. With embodiments of the present invention, grids with periods a few tens of nanometers can be fabricated. Among other things, such grids can be used to polarize visible and even ultraviolet light. As a result, such wire grid polarizers have a wide variety of applications and uses, such as, e.g., in the fabrication of semiconductors, nanolithography, and more.
摘要翻译：虽然金线网已经被用于使红外波长偏振了一百多年，但是由于它们的长周期，它们不适合于更短的波长。利用本发明的实施例，可以制造具有几十纳米的周期的栅格。除此之外，这样的栅格可以用于使可见光甚至紫外光偏振。因此，这种线栅偏振器具有各种各样的应用和用途，例如在半导体的制造，纳米光刻技术等中。

85. 发明申请

US20120214094A1 METHOD OF FORMING PATTERN 有权
标题翻译：形成图案的方法
公开(公告)号：US20120214094A1
公开(公告)日：2012-08-23
申请号：US13402400
申请日：2012-02-22
申请人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
发明人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
IPC分类号： G03F7/20 , H01L21/302 , G03F7/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , G03F7/0757 , G03F7/165 , G03F7/26 , H01L21/3086
摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要翻译：根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二分别在第一和第二区域上的微相分离结构。

86. 发明申请

US20120127454A1 PATTERN FORMING METHOD 有权
标题翻译：图案形成方法
公开(公告)号：US20120127454A1
公开(公告)日：2012-05-24
申请号：US13239449
申请日：2011-09-22
申请人： Hiroko NAKAMURA , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
发明人： Hiroko NAKAMURA , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
IPC分类号： G03B27/32
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.
摘要翻译：根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案，区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。用左图案蚀刻该胶片作为掩模。

87. 发明授权

US08043520B2 Method for manufacturing porous structure and method for forming pattern 有权
标题翻译：制造多孔结构的方法及其形成方法
公开(公告)号：US08043520B2
公开(公告)日：2011-10-25
申请号：US12355170
申请日：2009-01-16
申请人： Koji Asakawa , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
发明人： Koji Asakawa , Toshiro Hiraoka , Yoshihiro Akasaka , Yasuyuki Hotta
IPC分类号： C08J9/26
CPC分类号： C08J9/26 , B82Y10/00 , B82Y30/00 , C03C17/007 , C03C2217/425 , C03C2217/479 , C03C2218/33 , C08J2333/12 , C08J2383/16 , C23F1/30 , G03F7/0002 , G11B5/74 , G11B5/743 , G11B5/855 , G11B2005/0029 , H01G11/30 , H01G11/56 , H01J9/02 , H01J9/025 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02211 , H01L21/02216 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/0337 , H01L21/31695 , H01M2/145 , H01M2/1653 , H01M4/131 , H01M4/133 , H01M4/8605 , H01M4/96 , H01M8/0234 , H01M8/0245 , H01M8/026 , H01M8/1011 , H01M10/0525 , Y02E60/13 , Y02E60/523 , Y02P70/56 , Y10S438/945 , Y10S438/947 , Y10S977/90 , Y10T428/24149
摘要： A pattern forming material contains a block copolymer or graft copolymer and forms a structure having micro polymer phases, in which, with respect to at least two polymer chains among polymer chains constituting the block copolymer or graft copolymer, the ratio between N/(Nc−No) values of monomer units constituting respective polymer chains is 1.4 or more, where N represents total number of atoms in the monomer unit, Nc represents the number of carbon atoms in the monomer unit, No represents the number of oxygen atoms in the monomer unit.
摘要翻译：图案形成材料含有嵌段共聚物或接枝共聚物，并形成具有微聚合物相的结构，其中，关于构成嵌段共聚物或接枝共聚物的聚合物链中的至少两个聚合物链，N /（Nc- 否）构成各聚合物链的单体单元的值为1.4以上，其中N表示单体单元中的总原子数，Nc表示单体单元中的碳原子数，No表示单体单元中的氧原子数。

88. 发明授权

US07851564B2 Silicone resin composition 有权
标题翻译：硅树脂组合物
公开(公告)号：US07851564B2
公开(公告)日：2010-12-14
申请号：US11958111
申请日：2007-12-17
申请人： Shinji Murai , Koji Asakawa
发明人： Shinji Murai , Koji Asakawa
IPC分类号： C08G77/08
CPC分类号： C08L83/04 , C08G77/12 , C08G77/20 , C08K5/5425 , C08K5/56 , H01L2224/48091 , Y10T428/31663 , C08L83/00 , H01L2924/00014
摘要： A silicone resin composition is provided, which includes an alkenyl group-containing polysiloxane represented by the following average composition formula (PSA(1)), a hydro group-containing polysiloxane represented by the following average composition formula (PSA(2)), two kinds of polysiloxane, both having opposite ends sealed with a vinyl group, which are represented by the following formulas (PSC(1) and PSC(4)), and a hydrosilylating catalyst:
摘要翻译：提供一种有机硅树脂组合物，其包含由以下平均组成式（PSA（1））表示的含烯基的聚硅氧烷，由以下平均组成式（PSA（2））表示的含氢基聚硅氧烷，两由下式（PSC（1）和PSC（4））表示的具有用乙烯基封端的相对端的聚硅氧烷种类和氢化硅烷化催化剂：

89. 发明授权

US07823808B2 Electrostatic spraying device 有权
标题翻译：静电喷涂装置
公开(公告)号：US07823808B2
公开(公告)日：2010-11-02
申请号：US10588437
申请日：2004-02-09
申请人： Naoki Yamaguchi , Koji Asakawa , David Edward Wilson , Shunichi Nagasawa
发明人： Naoki Yamaguchi , Koji Asakawa , David Edward Wilson , Shunichi Nagasawa
IPC分类号： B05B5/00 , A62C13/62 , A62C11/00 , B01D17/00 , B04B9/04 , A61M11/00 , A61M15/00 , B65D35/28 , B65D35/00 , B65D1/32 , G01F11/00 , B05B7/00
CPC分类号： B05B5/0531 , B05B5/1691
摘要： An electrostatic spraying device having a removable cartridge with a reservoir containing a volume of liquid compositions to be electrically sprayed on a user's skin. The device includes a nozzle for dispensing the liquid as well as an emitter electrode disposed adjacent to the nozzle for charging the liquid composition just being dispensed from the nozzle. A field electrode surrounds the reservoir in order to charge the liquid composition within the reservoir, thereby avoiding an occurrence of electric current which would otherwise flow in the liquid composition and would deteriorate the composition remaining in the reservoir. The reservoir is devoid of the field electrode, and therefor can be designed into a simple and compact structure without being restricted by the field electrode, assuring to have an enhanced liquid containing volume in relation to the bulk of the removable cartridge.
摘要翻译：一种静电喷涂装置，其具有可移除的墨盒，该墨盒具有储存器，该储存器包含一定量的液体组合物，以电喷涂在使用者的皮肤上。该装置包括用于分配液体的喷嘴以及邻近喷嘴设置的用于对从喷嘴分配的液体组合物进行充电的发射电极。场电极围绕储存器，以便对储存器内的液体组合物进行充电，从而避免电流的发生，否则会流入液体组合物中，并且会使残留在储存器中的组合物劣化。储存器没有场电极，因此可以将其设计成简单紧凑的结构，而不受场电极的限制，确保相对于可移除盒的体积具有增强的液体容积。

90. 发明申请

US20090189180A1 SILICONE RESIN COMPOSITION 有权
标题翻译：硅树脂组合物
公开(公告)号：US20090189180A1
公开(公告)日：2009-07-30
申请号：US12339501
申请日：2008-12-19
申请人： Shinji MURAI , Koji Asakawa
发明人： Shinji MURAI , Koji Asakawa
IPC分类号： H01L23/29 , C08L83/06 , H01L33/00
CPC分类号： H01L23/295 , C08G77/12 , C08G77/20 , C08L83/04 , H01L23/296 , H01L33/56 , H01L2224/48091 , Y10T428/31663 , H01L2924/00014
摘要： A silicone resin composition is provided, which includes polysiloxane including (PSA1), (PSA2), (PSB) and (PSC), and a hydrosilylating catalyst, wherein a weight ratio between (PSA2) and (PSA1) (w2/w1) is 0.03-0.2:
摘要翻译：提供了包含（PSA1），（PSA2），（PSB）和（PSC）的聚硅氧烷和（PSA2）与（PSA1）（w2 / w1）的重量比为 0.03-0.2：

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