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81. 发明申请

US20080160748A1 Method of Forming Dielectric Layer of Flash Memory Device 审中-公开
标题翻译：形成闪存器件介质层的方法
公开(公告)号：US20080160748A1
公开(公告)日：2008-07-03
申请号：US11954673
申请日：2007-12-12
申请人： Kwon Hong , Dong Ho Lee , Jae Mun Kim , Hee Soo Kim , Jae Hyoung Koo
发明人： Kwon Hong , Dong Ho Lee , Jae Mun Kim , Hee Soo Kim , Jae Hyoung Koo
IPC分类号： H01L21/283
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/513 , H01L29/7881
摘要： The present invention relates to a method of forming a dielectric layer of a flash memory device. In a process of forming a dielectric layer of a flash memory device, the dielectric layer may include a first oxide layer, a high dielectric layer, and a second oxide layer is formed. Accordingly, a leakage current characteristic and reliability of the flash memory device can be improved.
摘要翻译：本发明涉及一种形成闪存器件的电介质层的方法。在形成闪速存储器件的电介质层的过程中，介电层可以包括第一氧化物层，高电介质层和形成第二氧化物层。因此，可以提高闪存器件的漏电流特性和可靠性。

82. 发明授权

US07351433B2 Method for producing polymeric sol of calcium phosphate compound and method for coating the same on a metal implant 有权
标题翻译：磷酸钙化合物的聚合物溶胶的制造方法及其在金属植入物上的涂布方法
公开(公告)号：US07351433B2
公开(公告)日：2008-04-01
申请号：US10809509
申请日：2004-03-26
申请人： Hyun Seung Yu , Dong Soo Lee , Kug Sun Hong , Choon Ki Lee , Jae hyup Lee , Dong Ho Lee , Bong Soon Chang , Jin Young Kim , Sung Soo Chung
发明人： Hyun Seung Yu , Dong Soo Lee , Kug Sun Hong , Choon Ki Lee , Jae hyup Lee , Dong Ho Lee , Bong Soon Chang , Jin Young Kim , Sung Soo Chung
IPC分类号： A61K33/42 , A61L27/32 , A61L33/00
CPC分类号： A61L27/32 , A61K33/42 , A61L27/12 , A61K2300/00
摘要： Disclosed is a method for producing a transparent and homogenized polymeric sol of a calcium phosphate compound, containing apatite and having excellent wettability and bioactivity, according to a sol-gel synthesis, and a method for coating the polymeric sol on a metal implant, in which the polymeric sol is coated on the metal implant and then heat-treated to form a dense coated layer strongly bonded to the metal implant. The polymeric sol is obtained by process of preparing a calcium salt solution, containing calcium ethoxide dissolved in organic acid, and a phosphate solution, containing triethyl phosphite or triethyl phosphate dissolved in the organic acid, mixing the calcium salt solution with the phosphate solution to produce a mixed solution, and aging the mixed solution.
摘要翻译：本发明公开了一种根据溶胶 - 凝胶合成法生产含有磷灰石并具有优异的润湿性和生物活性的磷酸钙化合物的透明均化聚合物溶胶的方法，以及在金属植入物上涂覆聚合物溶胶的方法，其中将聚合物溶胶涂覆在金属植入物上，然后进行热处理以形成与金属植入物牢固结合的致密涂层。通过制备溶解在有机酸中的含有乙醇钙的钙盐溶液和溶解在有机酸中的含有亚磷酸三乙酯或磷酸三乙酯的磷酸盐溶液，将钙盐溶液与磷酸盐溶液混合，得到聚合物溶胶混合溶液，老化混合溶液。

83. 发明授权

US07037867B2 Artificial bone graft substitute using calcium phosphate compounds and method of manufacturing the same 有权
公开(公告)号：US07037867B2
公开(公告)日：2006-05-02
申请号：US10273265
申请日：2002-10-18
申请人： Hyun Seung Yu , Kug Sun Hong , Choon Ki Lee , Dong Ho Lee , Sang Lim Lee , Bong Soon Chang , Su Jin Kim , Chang Kyun Lim
发明人： Hyun Seung Yu , Kug Sun Hong , Choon Ki Lee , Dong Ho Lee , Sang Lim Lee , Bong Soon Chang , Su Jin Kim , Chang Kyun Lim
IPC分类号： C04B35/447 , B28B1/00 , A61F2/28
CPC分类号： A61L27/12 , A61F2/4644 , A61F2002/2835 , A61F2310/00293 , A61L27/56 , A61L2430/02
摘要： A bone graft substitute using magnesium substituted calcium phosphate compounds and a method of manufacturing the same is provided in which the bone graft substitute is used for recovering bones damaged due to a bone fracture. The method of manufacturing a bone graft substitute includes the steps of mixing powdered calcium pyrophosphate and a magnesium included compound to thereby obtain a composition, pressure-forming the compositions to obtain a plastic body; and sintering the plastic body.

84. 发明授权

US06893944B2 Method of manufacturing a semiconductor wafer 失效
标题翻译：制造半导体晶片的方法
公开(公告)号：US06893944B2
公开(公告)日：2005-05-17
申请号：US10613616
申请日：2003-07-03
申请人： Dong Ho Lee , Noh Yeal Kwak
发明人： Dong Ho Lee , Noh Yeal Kwak
IPC分类号： H01L21/324 , H01L21/322
CPC分类号： H01L21/3225
摘要： Disclosed is a method of manufacturing a semiconductor wafer. In the present invention, a nucleation site is formed in a region deep into the wafer through low-temperature annealing process, and oxygen or precipitation material, the metallic impurity, or the like is trapped in the nucleation site through rapid thermal annealing process. As a gettering effect is improved using the rapid thermal annealing process, the concentration of the impurity on the surface of the wafer can be lowered and the reliability of the device could be improved. Further, the annealing steps can be reduced than the prior art and the productivity of the device can thus be increased.
摘要翻译：公开了半导体晶片的制造方法。在本发明中，通过低温退火工艺在晶片深处形成成核点，通过快速热退火处理将氧或析出物，金属杂质等捕获在成核部位。由于使用快速热退火工艺提高了吸气效果，因此可以降低晶片表面上的杂质浓度，并且可以提高器件的可靠性。此外，退火步骤可以比现有技术减少，因此可以提高装置的生产率。

85. 发明授权

US06248619B1 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06248619B1
公开(公告)日：2001-06-19
申请号：US09325344
申请日：1999-06-04
申请人： Dong Ho Lee , Seung Woo Jin
发明人： Dong Ho Lee , Seung Woo Jin
IPC分类号： H01L218238
CPC分类号： H01L21/823807 , H01L21/823892
摘要： The president invention discloses a method of manufacturing a semiconductor device, comprising the steps of: defining a cell region for an NMOS element and a peripheral circuit region for NMOS and PMOS elements on a semiconductor substrate; forming a sacrifice oxide film and an ion barrier oxide film on the entire structure after the defining process; performing ion injection process on the cell region and the peripheral circuit region, so that a low concentration impurity injection region therein is formed; removing the ion barrier oxide film formed on the cell region and the peripheral circuit region; performing ion injection process on selected regions of the cell region and the peripheral circuit region; injecting ions for adjusting a threshold voltage into selected regions of the cell region and the peripheral circuit region; performing ion injection process on the low concentration impurity regions of the cell region and the peripheral circuit region, so that R-well region and a P-well region are formed, respectively; removing the ion barrier oxide film on the peripheral circuit region; and performing ion injection process for adjusting the threshold voltage on the cell region and the peripheral circuit region.
摘要翻译：总裁发明公开了一种制造半导体器件的方法，包括以下步骤：在半导体衬底上限定用于NMOS元件的单元区域和用于NMOS和PMOS元件的外围电路区域; 在定义过程之后，在整个结构上形成牺牲氧化物膜和离子屏障氧化膜; 对单元区域和外围电路区域进行离子注入处理，从而形成低浓度杂质注入区域; 除去形成在电池区域和外围电路区域上的离子阻挡氧化膜; 对单元区域和外围电路区域的选定区域进行离子注入处理; 注入离子以将阈值电压调整到单元区域和外围电路区域的选定区域中; 对单元区域和外围电路区域的低浓度杂质区域进行离子注入处理，分别形成R阱区域和P阱区域; 除去外围电路区域上的离子阻挡氧化膜; 并进行用于调整单元区域和外围电路区域的阈值电压的离子注入处理。

86. 发明授权

US06188727B1 Simplicity HDTV video decoder and its decoding method 失效
标题翻译：简洁的HDTV视频解码器及其解码方法
公开(公告)号：US06188727B1
公开(公告)日：2001-02-13
申请号：US08928219
申请日：1997-09-12
申请人： Dong Ho Lee
发明人： Dong Ho Lee
IPC分类号： H04N712
CPC分类号： H04N11/044 , H04N19/12 , H04N19/132 , H04N19/176 , H04N19/18 , H04N19/186 , H04N19/43 , H04N19/436 , H04N19/44 , H04N19/48 , H04N19/51 , H04N19/59 , H04N19/61
摘要： A simplicity HDTV video decoding method includes the steps of: variable-length-decoding an input image signal, and dividing it into a luminance signal, a color difference signal and a motion vector; reverse-quantizing each of the luminance and color difference signals received, and reverse-converting it to be half in horizontal size; and storing each of the reverse-converted luminance and color difference signals in the unit of frames, and motion-compensating it by using the motion vector, thus reducing the memory and other logic circuits in half by motion-compensating each of the luminance and color difference signals, generated in parallel by an 8×4 IDCT.
摘要翻译：简单的HDTV视频解码方法包括以下步骤：对输入图像信号进行可变长度解码，并将其分成亮度信号，色差信号和运动矢量; 对所接收的每个亮度和色差信号进行反量化，并将其逆向转换成水平尺寸的一半; 并以帧为单位存储反向转换的亮度和色差信号，并通过使用运动矢量对其进行运动补偿，从而通过运动补偿每个亮度和颜色来将存储器和其它逻辑电路减少一半差分信号，由8x4 IDCT并行生成。

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