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81. 发明授权

US08906780B2 Method for transferring a thin layer of monocrystalline silicon 有权
标题翻译：用于转移薄层单晶硅的方法
公开(公告)号：US08906780B2
公开(公告)日：2014-12-09
申请号：US13805796
申请日：2011-06-21
申请人： Maxime Argoud , Hubert Moriceau , Christian Fretigny
发明人： Maxime Argoud , Hubert Moriceau , Christian Fretigny
IPC分类号： H01L21/30 , C23C14/48 , C23C14/00 , B32B38/00 , H01L21/762
CPC分类号： B32B38/0008 , C23C14/0005 , C23C14/48 , H01L21/76254 , Y02P20/582
摘要： A method for transferring a thin layer of monocrystalline silicon from a free face of a monocrystalline silicon donor substrate having a thickness greater than that of the thin layer includes implanting ions through the free face to form a buried brittle layer in the silicon, using a polymer layer, bonding the donor substrate, by the free face, to a receiver substrate, and fracturing the thin layer from the donor substrate at the buried brittle layer by thermal fracture processing, and selecting conditions of implantation such that a thickness of the thin layer is smaller than 10 micrometers, and a thickness of the polymer layer is below a critical threshold defined as a function of energy and dose of the implantation, the critical threshold being less than or equal to the lesser of 500 nanometers and the thin layer's thickness.
摘要翻译：从单晶硅供体衬底的自由面转移薄层的单晶硅供体衬底的方法，其厚度大于薄层厚度的方法包括通过自由面注入离子以在硅中形成掩埋的脆性层，使用聚合物将供体衬底通过自由表面接合到接收器基板，并且通过热断裂处理在掩埋脆性层处从施主衬底压裂薄层，并且选择注入条件使得薄层的厚度为小于10微米，并且聚合物层的厚度低于作为注入能量和剂量的函数定义的临界阈值，临界阈值小于或等于500纳米的较小值和薄层的厚度。

82. 发明授权

US08382933B2 Molecular bonding method with cleaning with hydrofluoric acid in vapor phase and rinsing with deionized water 失效
标题翻译：分子键合方法用氢氟酸在蒸气相中清洗并用去离子水冲洗
公开(公告)号：US08382933B2
公开(公告)日：2013-02-26
申请号：US12068638
申请日：2008-02-08
申请人： Frank Fournel , Hubert Moriceau , Christophe Morales , Pierre Perreau
发明人： Frank Fournel , Hubert Moriceau , Christophe Morales , Pierre Perreau
IPC分类号： B08B3/00 , B29C65/00 , B32B37/00 , B32B38/00
CPC分类号： H01L21/02049 , H01L21/187
摘要： Adhesion by molecular bonding of two free surfaces of first and second substrates, for example formed by monocrystalline silicon wafers, comprises at least successively: a cleaning step of the two free surfaces with hydrofluoric acid in vapor phase to make the two free surfaces hydrophobic, a rinsing step of said free surfaces with deionized water with a time less than or equal to 30 seconds a step of bringing said free surfaces into contact.
摘要翻译：通过例如由单晶硅晶片形成的第一和第二基板的两个自由表面的分子结合的粘附性至少包括：两个自由表面的清洁步骤，其中气相中的氢氟酸使两个自由表面疏水，用去离子水冲洗所述游离表面的时间小于或等于30秒，使所述自由表面接触的步骤。

83. 发明授权

US08318586B2 Nitrogen-plasma surface treatment in a direct bonding method 有权
标题翻译：直接接合法进行氮等离子体表面处理
公开(公告)号：US08318586B2
公开(公告)日：2012-11-27
申请号：US12994792
申请日：2009-04-28
申请人： Laure Libralesso , Hubert Moriceau , Christophe Morales , François Rieutord , Caroline Ventosa , Thierry Chevolleau
发明人： Laure Libralesso , Hubert Moriceau , Christophe Morales , François Rieutord , Caroline Ventosa , Thierry Chevolleau
IPC分类号： H01L21/30 , H01L21/31
CPC分类号： H01L21/76251 , H01L21/2007
摘要： Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.
摘要翻译：通过使至少一个板的薄层经受表面处理步骤，形成厚度小于或等于的氮氧化硅表面薄膜的表面处理步骤，将在其表面上包含薄层硅或氧化硅的两个板接合 5nm。薄膜由电感耦合等离子体源产生的氮基等离子体进行。此外，在表面处理步骤期间，等离子体和支撑所述板的衬底保持器之间施加的电位差小于50V，有利地小于15V，优选为零。这使得能够获得无缺陷的接合界面，而与在两个板的各个薄层之间的接触步骤之后进行的任何热处理的温度无关。

84. 发明授权

US08288250B2 Method for transferring chips onto a substrate 有权
标题翻译：将芯片转移到基板上的方法
公开(公告)号：US08288250B2
公开(公告)日：2012-10-16
申请号：US12564597
申请日：2009-09-22
申请人： Laurent Clavelier , Chrystel Deguet , Patrick Leduc , Hubert Moriceau
发明人： Laurent Clavelier , Chrystel Deguet , Patrick Leduc , Hubert Moriceau
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/7813 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： A method for making a stack of at least two stages of circuits, each stage including a substrate and at least one component and metallic connections formed in or on this substrate, the assembly of a stage to be transferred onto a previous stage including: a) ionic implantation in the substrate of the stage to be transferred through at least part of the components, so as to form a weakened zone, b) formation of metallic connections of the components, c) transfer and assembly of some of this substrate onto the previous stage, and d) a step to thin the transferred part of the substrate by fracture along the weakened zone.
摘要翻译：一种用于制造至少两级电路的堆叠的方法，每个级包括衬底和形成在该衬底中或之上的至少一个部件和金属连接，待传送到前一级的级的组件，包括：a）通过至少部分组分转移到待转移阶段的衬底中的离子注入，以便形成弱化区，b）形成组分的金属连接，c）将该衬底中的一些衬底转移并组装到先前的阶段，以及d）通过沿着弱化区域的断裂来稀释基底的转移部分的步骤。

85. 发明申请

US20110129986A1 NITROGEN-PLASMA SURFACE TREATMENT IN A DIRECT BONDING METHOD 有权
标题翻译： NITROGEN-PLASMA表面处理在直接粘结方法中的应用
公开(公告)号：US20110129986A1
公开(公告)日：2011-06-02
申请号：US12994792
申请日：2009-04-28
申请人： Laure Libralesso , Hubert Moriceau , Christophe Morales , Francois Rieutord , Caroline Ventosa , Thierry Chevolleau
发明人： Laure Libralesso , Hubert Moriceau , Christophe Morales , Francois Rieutord , Caroline Ventosa , Thierry Chevolleau
IPC分类号： H01L21/30
CPC分类号： H01L21/76251 , H01L21/2007
摘要： Two plates, each comprising a thin layer of silicon or silicon oxide at a surface thereof, are bonded by subjecting the thin layer of at least one of the plates to a surface treatment step forming a silicon oxynitride superficial thin film with a thickness of less than 5 nm. The thin film is performed with a nitrogen-based plasma generated by an inductively coupled plasma source. Furthermore, a potential difference applied between the plasma and a substrate holder supporting said plate during the surface treatment step is less than 50 V, advantageously less than 15 V and preferably zero. This enables a defect-free bonding interface to be obtained irrespective of a temperature of any heat treatment carried out after a contacting step between the respective thin layers of the two plates.
摘要翻译：通过使至少一个板的薄层经受表面处理步骤，形成厚度小于或等于的氮氧化硅表面薄膜的表面处理步骤，将在其表面上包含薄层硅或氧化硅的两个板接合 5nm。薄膜由电感耦合等离子体源产生的氮基等离子体进行。此外，在表面处理步骤期间，等离子体和支撑所述板的衬底保持器之间施加的电位差小于50V，有利地小于15V，优选为零。这使得能够获得无缺陷的接合界面，而与在两个板的各个薄层之间的接触步骤之后进行的任何热处理的温度无关。

86. 发明授权

US07879690B2 Method of fabricating a microelectronic structure of a semiconductor on insulator type with different patterns 有权
标题翻译：制造具有不同图案的绝缘体半导体微电子结构的方法
公开(公告)号：US07879690B2
公开(公告)日：2011-02-01
申请号：US12413130
申请日：2009-03-27
申请人： Emmanuel Augendre , Thomas Ernst , Marek Kostrzewa , Hubert Moriceau
发明人： Emmanuel Augendre , Thomas Ernst , Marek Kostrzewa , Hubert Moriceau
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A microstructure of the semiconductor on insulator type with different patterns is produced by forming a stacked uniform structure including a plate forming a substrate, a continuous insulative layer and a semiconductor layer. The continuous insulative layer is a stack of at least three elementary layers, including a bottom elementary layer, at least one intermediate elementary layer, and a top elementary layer overlying the semiconductor layer, where at least one of the bottom elementary layer and the top elementary layer being of an insulative material. In the stacked uniform structure, at least two patterns are differentiated by modifying at least one of the elementary layers in one of the patterns so that the elementary layer has a significantly different physical or chemical property between the two patterns, where at least one of the bottom and top elementary layer is an insulative material that remains unchanged.
摘要翻译：通过形成包括形成衬底的板，连续绝缘层和半导体层的层叠均匀结构，来产生具有不同图案的绝缘体半导体型微结构。连续绝缘层是至少三个基本层的堆叠，包括底部基本层，至少一个中间基本层和覆盖半导体层的顶部基本层，其中底部基本层和顶部基本层中的至少一个层是绝缘材料。在层叠的均匀结构中，通过修改其中一个图案中的至少一个基本层来区分至少两个图案，使得元件层在两个图案之间具有显着不同的物理或化学性质，其中至少一个底部和顶部基本层是保持不变的绝缘材料。

87. 发明授权

US07781300B2 Method for producing mixed stacked structures, different insulating areas and/or localised vertical electrical conducting areas 有权
标题翻译：用于制造混合堆叠结构，不同绝缘区域和/或局部垂直导电区域的方法
公开(公告)号：US07781300B2
公开(公告)日：2010-08-24
申请号：US11576743
申请日：2005-10-06
申请人： Hubert Moriceau , Franck Fournel , Christophe Morales
发明人： Hubert Moriceau , Franck Fournel , Christophe Morales
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/76224
摘要： The invention relates to a method for producing a semiconducting structure including: controlled formation, through a mask (31), in a first substrate (30) in a semiconducting material, of at least one first area in an insulating material (36), up to the level of the lower surface (35) of the mask, before or during the removal of the mask.
摘要翻译：本发明涉及一种用于制造半导体结构的方法，包括：通过掩模（31）在绝缘材料（36）中的至少一个第一区域的半导体材料的第一衬底（30）中控制形成到达掩模的下表面（35）的水平面前，或在去除掩模期间。

88. 发明申请

US20100081280A1 METHOD OF PRODUCING A MIXED SUBSTRATE 审中-公开
标题翻译：生产混合基材的方法
公开(公告)号：US20100081280A1
公开(公告)日：2010-04-01
申请号：US12515021
申请日：2007-11-28
申请人： Hubert Moriceau , Sylvie Satori , Anne-Marie Charvet
发明人： Hubert Moriceau , Sylvie Satori , Anne-Marie Charvet
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , H01L21/76208 , H01L21/76251
摘要： The invention concerns a method of producing a mixed substrate, that is to say a substrate comprising at least one block of material different from the material of the substrate, the method comprising the following successive steps: formation of a cavity in a substrate of first material, and from one of its faces, the formation of the cavity being carried out so as to leave at least part of the first material projecting from the bottom of the cavity, formation of the block by means of a reaction, initiated from the walls of the cavity, between the first material and at least one chemical element contributed in order to obtain a second material filling the cavity, the formation of the block being carried out so as to obtain, from the part of the first material projecting, a protrusion of second material projecting on said face of the substrate.
摘要翻译：本发明涉及一种生产混合基质的方法，也就是说基底包含至少一块不同于基底材料的材料块，该方法包括以下连续步骤：在第一材料的基底中形成空腔，并且从其一个表面，形成腔体，以便使至少部分第一材料从空腔的底部突出，通过反应形成块体，其由壁的壁所述第一材料和所述至少一种化学元素之间的空腔用于获得填充所述空腔的第二材料，所述块的形成被执行以便从所述第一材料的所述部分突出得到在所述基板的所述面上突出的第二材料。

89. 发明申请

US20090165277A1 METHOD AND DEVICE FOR SEPARATING A STRUCTURE 失效
标题翻译：分离结构的方法和装置
公开(公告)号：US20090165277A1
公开(公告)日：2009-07-02
申请号：US12341645
申请日：2008-12-22
申请人： Marc Zussy , Lea Di Cioccio , Christophe Morales , Hubert Moriceau
发明人： Marc Zussy , Lea Di Cioccio , Christophe Morales , Hubert Moriceau
IPC分类号： B23P19/00
CPC分类号： B28D5/0017 , H01L21/67092 , Y10T29/49815 , Y10T29/49821 , Y10T29/49822 , Y10T29/53274 , Y10T29/53683 , Y10T29/54
摘要： A method of separating a structure including a fragile zone delimiting two substructures to be separated, where at least one plane blade is advanced in a separation plane corresponding to a median plane of the fragile zone, from an entry edge of the structure in a direction of advance toward an exit edge of the structure, so as to cause progressive separation of the two substructures, and where the inclination of the blade in the separation plane is varied relative to the direction of advance.
摘要翻译：一种分离包括限定要分离的两个子结构的脆弱区域的结构的方法，其中至少一个平面叶片在对应于脆弱区域的中间平面的分离平面中前进到结构的入口边缘，方向为朝向结构的出口边缘前进，以便引起两个子结构的逐渐分离，并且其中分离平面中的叶片的倾斜相对于前进方向变化。

90. 发明申请

US20090133819A1 DEFORMATION MODERATION METHOD 有权
标题翻译：变形演化方法
公开(公告)号：US20090133819A1
公开(公告)日：2009-05-28
申请号：US12276112
申请日：2008-11-21
申请人： Hubert Moriceau , Jean-Claude Roussin
发明人： Hubert Moriceau , Jean-Claude Roussin
IPC分类号： B32B38/10
CPC分类号： H01F10/24 , C30B29/28 , C30B29/36 , H01F41/34 , H01L21/76254 , H01L43/12 , Y10S438/933
摘要： A method of transferring a layer of a first material onto a second substrate of a second material includes, a step of forming a first embrittlement plane in a first substrate in first material, by a first ion and/or atom implantation through a first face of said substrate, a step of forming a second embrittlement plane in said first substrate, by a first ion and/or atom implantation through a second face of said substrate, in order to reduce a curvature of this first substrate, a step of assembling the first and second substrates, and a step of separating a layer from the first substrate at the level of the first embrittlement plane, without separation at the level of the second embrittlement plane.
摘要翻译：将第一材料层转移到第二材料的第二衬底上的方法包括：通过第一离子和/或原子注入在第一材料中的第一衬底中形成第一脆化面的步骤，所述衬底是通过所述衬底的第二面通过第一离子和/或原子注入在所述第一衬底中形成第二脆化面的步骤，以便减小所述第一衬底的曲率，和第二基板，以及在第一脆化平面的水平处从第一基板分离层而不在第二脆化面的水平分离的步骤。

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