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81. 发明授权

US06508885B1 Edge sealing structure for substrate in low-pressure processing environment 失效
标题翻译：低压处理环境中基材的边缘密封结构
公开(公告)号：US06508885B1
公开(公告)日：2003-01-21
申请号：US09563961
申请日：2000-05-03
申请人： Mehrdad M. Moslehi , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Cecil J. Davis
IPC分类号： C23C1600
CPC分类号： C23C14/50 , C23C16/4585 , Y10S414/136 , Y10S414/14 , Y10S414/141 , Y10T279/35
摘要： A low-pressure processor for processing substrates includes a chuck that engages the substrates' peripheries for purposes of clamping, sealing, and centering the substrates on chuck bodies. For accomplishing all three purposes, a mechanical clamp can be arranged with two sealing regions. One of the sealing regions seals the clamp to a chuck body or an extension of the chuck body, and another of the sealing regions engages a peripheral edge surface of a substrate for sealing the clamp to the substrate. The second sealing region includes an inclined seating surface that engages a front edge of the substrate's peripheral edge surface and divides a clamping force into a first component that presses the substrate against the chuck body and a second component that centers the substrate on the chuck body. The peripheral engagement of the substrate exposes substantially the entire front surface of the substrate to processing and exposes substantially the entire back surface of the substrate to a heat-transfer gas for enhancing thermal transfers between the substrate and the temperature-regulated chuck body.
摘要翻译：用于处理基板的低压处理器包括与基板周边接合的卡盘，用于夹紧，密封和将基板对准在卡盘体上。为了实现所有这三个目的，机械夹具可以布置有两个密封区域。一个密封区域将夹具密封到卡盘主体或卡盘主体的延伸部分，另一个密封区域与基板的周边边缘表面接合，以将夹具密封到基板。第二密封区域包括倾斜的就座表面，其与衬底的周边边缘表面的前边缘接合并且将夹紧力分成第一部件，该第一部件将衬底压靠在卡盘主体上;以及第二部件，其将衬底定位在卡盘主体上。衬底的周边接合基本上暴露了衬底的整个前表面，从而基本上将衬底的整个后表面基本上暴露于传热气体，以增强衬底和温度调节卡盘体之间的热传递。

82. 发明授权

US06221217B1 Physical vapor deposition system having reduced thickness backing plate 有权
标题翻译：物理气相沉积系统具有减小厚度的背板
公开(公告)号：US06221217B1
公开(公告)日：2001-04-24
申请号：US09205113
申请日：1998-12-03
申请人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
发明人： Mehrdad M. Moslehi , Dorian Heimanson , Cecil J. Davis , Thomas R. Omstead
IPC分类号： C23C1434
CPC分类号： H01J37/3435 , C23C14/3407 , C23C14/35 , H01J37/3408 , H01J37/3497
摘要： A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. In one embodiment, the backing plate includes a center post to support the backing plate during operation. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
摘要翻译：提供磁控溅射系统，其使用磁控管组件中的冷却通道来冷却靶。磁控管溅射系统还在磁控管组件中产生低压区域，使得背板看到的压差远低于大气压。在一个实施例中，背板包括在操作期间支撑背板的中心柱。背板的厚度减小，并且对产生的磁场提供较少的屏障。

83. 发明授权

US6106682A Thin-film processing electromagnet for low-skew magnetic orientation 失效
标题翻译：用于低偏磁磁取向的薄膜加工电磁铁
公开(公告)号：US6106682A
公开(公告)日：2000-08-22
申请号：US83742
申请日：1998-05-22
申请人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
发明人： Mehrdad M. Moslehi , Shiyuan Cheng , Xiangqun Chen , Cecil J. Davis
IPC分类号： C23C14/34 , C23C14/35 , C23C16/08 , C23C16/10 , C23C16/16 , C23C16/18 , H01F3/02 , H01F7/06 , H01F7/20
CPC分类号： C23C14/3414 , C23C14/351 , C23C16/08 , C23C16/10 , C23C16/16 , C23C16/18 , H01F7/20
摘要： An electromagnet having one or more coils wrapped around a plate-shaped core produces a uniaxial magnetic filed in the vicinity of a substrate surface for orienting a magnetic film deposited onto the substrate surface. Variations in the magnetic mass of the plate-shaped core or in the magnetic permeability of the core mass are made to reduce angular skew and to improve uniformity of the uniaxial magnetic field. The variations generally involve a reduction in magnetic mass or permeability near a center of the core with respect to a periphery of the core. Cavities of various sizes and shapes but having symmetry with a magnetic axis can be formed in the core for this purpose.
摘要翻译：具有缠绕在板状芯上的一个或多个线圈的电磁体在基板表面附近产生用于使沉积在基板表面上的磁性膜定向的单轴磁场。制成板状芯的磁性质量或芯体的磁导率的变化，以减小角偏移并提高单轴磁场的均匀性。这些变化通常涉及相对于芯的周边在芯的中心附近减小磁性质量或磁导率。为此，可以在芯中形成各种尺寸和形状但具有与磁轴对称的腔体。

84. 发明授权

US5094936A High pressure photoresist silylation process and apparatus 失效
标题翻译：高压光刻胶硅烷化工艺及装置
公开(公告)号：US5094936A
公开(公告)日：1992-03-10
申请号：US544085
申请日：1990-06-26
申请人： George R. Misium , Cesar M. Garza , Cecil J. Davis
发明人： George R. Misium , Cesar M. Garza , Cecil J. Davis
IPC分类号： G03F7/26
CPC分类号： G03F7/265
摘要： A process for silylation of positive or negative photosensitive resist layer on a semiconductor wafer after the resist layer has been exposed to radiant energy through a mask which includes introducing a silylating agent to the wafer at high pressure over 760 torr and, usually, at temperatures less than 180.degree. C. Increased pressure increases the rate of silylation, allows practical use of lower process temperatures, and, therefore, allows better process control. Also an apparatus is disclosed for applying the high pressure silylation process to a wafer.
摘要翻译：在抗蚀剂层已经通过掩模暴露于辐射能量之后，在半导体晶片上将正或负光敏抗蚀剂层甲硅烷基化的方法，其包括在760乇以上的高压下将硅烷化剂引入晶片，并且通常在较低温度超过180℃。增加的压力提高了甲硅烷基化速率，允许实际使用较低的工艺温度，因此允许更好的过程控制。公开了一种将高压甲硅烷基化方法应用于晶片的装置。

85. 发明授权

US4988533A Method for deposition of silicon oxide on a wafer 失效
标题翻译：在晶圆上沉积氧化硅的方法
公开(公告)号：US4988533A
公开(公告)日：1991-01-29
申请号：US203583
申请日：1988-05-27
申请人： Dean W. Freeman , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
发明人： Dean W. Freeman , Joseph D. Luttmer , Patricia B. Smith , Cecil J. Davis
IPC分类号： C23C16/40
CPC分类号： C23C16/402
摘要： A processing apparatus and method for depositing a silicon oxide layer on a temperature sensitive wafer utilizing a single process chamber provide nitrous oxide gas to the chamber with the excitation energy being provided by a remotely generated plasma while supplying silane gas in combination with illuminating the wafer with an in situ generated ultraviolet energy to produce the silicon oxide layer.
摘要翻译：使用单个处理室在温度敏感晶片上沉积氧化硅层的处理装置和方法向室提供氧化亚氮气体，其中激发能由远程产生的等离子体提供，同时将硅烷气体与照射晶片同时原位产生的紫外线能量以产生氧化硅层。

86. 发明授权

US4916091A Plasma and plasma UV deposition of SiO.sub.2 失效
标题翻译：等离子体和等离子体的紫外线沉积SiO2
公开(公告)号：US4916091A
公开(公告)日：1990-04-10
申请号：US284835
申请日：1988-12-13
申请人： Dean W. Freeman , James B. Burris , Cecil J. Davis , Lee Loewenstein
发明人： Dean W. Freeman , James B. Burris , Cecil J. Davis , Lee Loewenstein
IPC分类号： C23C16/40 , H01L21/316
CPC分类号： H01L21/02129 , C23C16/402 , H01L21/02164 , H01L21/02216 , H01L21/02274 , H01L21/31612 , H01L21/31625
摘要： A processing apparatus and method utilizing a single process chamber to deposit a layer of doped or undoped silicon dioxide utilizing a silicon source and a dopant gas and a remote plasma from an oxygen source and a source of additional ultraviolet light.
摘要翻译：一种处理装置和方法，利用单个处理室，利用硅源和掺杂剂气体以及来自氧源和另外的紫外光源的远距离等离子体沉积掺杂或未掺杂二氧化硅的层。

87. 发明授权

US4910043A Processing apparatus and method 失效
标题翻译：处理装置和方法
公开(公告)号：US4910043A
公开(公告)日：1990-03-20
申请号：US74415
申请日：1987-07-16
申请人： Dean W. Freeman , James B. Burris , Cecil J. Davis , Lee M. Lowenstein
发明人： Dean W. Freeman , James B. Burris , Cecil J. Davis , Lee M. Lowenstein
IPC分类号： C04B41/53 , C04B41/91 , C23F4/00 , H01L21/3213
CPC分类号： C04B41/91 , C04B41/5346 , C23F4/00 , H01L21/32136
摘要： A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.
摘要翻译：一种处理装置和方法，该处理装置和方法利用单个处理室来沉积具有硅源的氮化硅，包括氮源的远程等离子体，附加到处理室中的额外的紫外线能量以提供硅源的附加分子激发。

88. 发明授权

US4849068A Apparatus and method for plasma-assisted etching 失效
标题翻译：等离子体辅助蚀刻的装置和方法
公开(公告)号：US4849068A
公开(公告)日：1989-07-18
申请号：US211110
申请日：1988-06-21
申请人： Cecil J. Davis , Duane E. Carter , Rhett B. Jucha
发明人： Cecil J. Davis , Duane E. Carter , Rhett B. Jucha
IPC分类号： H01J37/32
CPC分类号： H01J37/3244
摘要： An apparatus for reactive ion etching or plasma etching wherein the wafer faces downward. The process gas is supplied through a distributor which is below the wafer and has orifices pointing away from the wafer. The vacuum (exhaust) port is below the distributor, so that there is no bulk gas flow near the face of the wafer. Preferably transport of the process gasses and their products to the face of the wafer is dominated by diffusion.
摘要翻译：用于反应离子蚀刻或等离子体蚀刻的装置，其中晶片面向下。工艺气体通过位于晶片下方并具有远离晶片的孔的分配器供应。真空（排气）端口位于分配器下面，使得在晶片表面附近没有大量气体流动。优选将工艺气体及其产品输送到晶片的表面，由扩散来支配。

89. 发明授权

US4842687A Method for etching tungsten 失效
标题翻译：蚀刻钨的方法
公开(公告)号：US4842687A
公开(公告)日：1989-06-27
申请号：US203512
申请日：1988-05-25
申请人： Rhett B. Jucha , Cecil J. Davis
发明人： Rhett B. Jucha , Cecil J. Davis
IPC分类号： C23F4/00 , H01L21/00 , H01L21/308 , H01L21/3213
CPC分类号： H01L21/67069 , C23F4/00 , H01L21/3085 , H01L21/32136
摘要： A thin film metal (e.g. tungsten) is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes a fluorine source, such as SF.sub.6, plus a bromine source, such as HBr, plus a hydrocarbon source, e.g., an alkyl, such as methane. This passivating chemistry provides a very robust passivant which will provide highly anisotropic high rate flow etching, and will also improve the selectivity to photoresist.
摘要翻译：在等离子体轰击条件下，通过使用包括氟源（例如SF 6），溴源如HBr加上烃源（例如烷基）的进料气体混合物，各向异性地蚀刻薄膜金属（例如钨）如甲烷。这种钝化化学提供了非常坚固的钝化剂，其将提供高度各向异性的高速率流动蚀刻，并且还将提高对光致抗蚀剂的选择性。

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