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81. 发明申请

US20090170940A1 Modified ethyl formate compositions and methods for soil fumigation 审中-公开
标题翻译：改性甲酸甲酯组合物和土壤熏蒸方法
公开(公告)号：US20090170940A1
公开(公告)日：2009-07-02
申请号：US12006076
申请日：2007-12-29
申请人： Lilia Hernandez , Ian Williams , John Williams , German Maya
发明人： Lilia Hernandez , Ian Williams , John Williams , German Maya
IPC分类号： A01N37/00 , A01P5/00
CPC分类号： A01N37/02 , A01N25/02 , A01N25/04 , A01N2300/00
摘要： Slow-flow, modified ethyl formate compositions and methods for their use as pre-plant soil fumigants (controlling nematodes and other pathogens) are provided. The modifications include adding to ethyl formate a viscosity modifying thickening agent, and one or more substances which function as a co-solvent and dilution agent (the co-solvent and dilution may or may not be the same). The thickening agent increases the viscosity thereby slowing its flow or rate of transport through the soil. The co-solvent functions as the primary solvent for the viscosity modifying thickening agent. The dilution agent does two things. First, it is used to reduce the partial vapor pressure of the ethyl formate in the formulation, thereby slowing its evaporation rate. Second, it also slows the rate and amount of decomposition of the ethyl formate. The SFMEF compositions and methods do not have harmful ozone-depleting side effects and break down into two naturally-occurring, environmentally-friendly components. Thus they are useful as replacements for methyl bromide and other known ozone-depleting and/or highly toxic soil fumigants.
摘要翻译：提供了缓慢流动的改性乙酸甲酯组合物及其用作植物前土壤熏蒸剂（控制线虫和其他病原体）的方法。修饰包括向甲酸乙酯中加入粘度调节增稠剂，以及一种或多种作为助溶剂和稀释剂起作用的物质（共溶剂和稀释可能相同或不相同）。增稠剂增加粘度，从而减缓其流动或通过土壤的运输速率。共溶剂用作粘度增稠剂的主要溶剂。稀释剂做两件事情。首先，它用于降低制剂中甲酸乙酯的部分蒸汽压，从而减缓其蒸发速率。第二，它也减慢甲酸乙酯的分解速率和量。 SFMEF的成分和方法没有有害的臭氧消耗副作用，分解成两种天然存在的环保组分。因此，它们可用作甲基溴和其他已知的臭氧消耗和/或剧毒土壤熏蒸剂的替代物。

82. 发明申请

US20070278417A1 ION IMPLANTATION ION SOURCE, SYSTEM AND METHOD 审中-公开
公开(公告)号：US20070278417A1
公开(公告)日：2007-12-06
申请号：US11778272
申请日：2007-07-16
申请人： Thomas Horsky , John Williams
发明人： Thomas Horsky , John Williams
IPC分类号： H01J27/00
CPC分类号： H01J27/205 , H01J37/08 , H01J37/3171 , H01J2237/006 , H01J2237/049 , H01J2237/063 , H01J2237/082 , H01J2237/31701 , H01J2237/31703 , H01J2237/31705
摘要： Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

83. 发明申请

US20070262262A1 Ion implantation ion source, system and method 失效
公开(公告)号：US20070262262A1
公开(公告)日：2007-11-15
申请号：US11647924
申请日：2006-12-29
申请人： Thomas Horsky , John Williams
发明人： Thomas Horsky , John Williams
IPC分类号： H01J3/14
CPC分类号： H01J37/3171 , C23C14/48 , H01J27/205 , H01J37/08 , H01J2237/047 , H01J2237/049 , H01J2237/063 , H01J2237/0812 , H01J2237/0815 , H01J2237/082 , H01J2237/083 , H01J2237/0835 , H01J2237/31701 , H01J2237/31703 , H01J2237/31705 , H01L21/26513 , H01L21/2658 , H01L21/823814
摘要： Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large faction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

84. 发明申请

US20070234135A1 Systems and methods for visualizing bit errors 有权
标题翻译：用于可视化位错误的系统和方法
公开(公告)号：US20070234135A1
公开(公告)日：2007-10-04
申请号：US11366615
申请日：2006-03-03
申请人： David Boyes , John Williams
发明人： David Boyes , John Williams
IPC分类号： G06F11/00
CPC分类号： H04N17/004 , H04L1/0045 , H04L1/20
摘要： Systems and methods for analyzing the performance of a digital network include capturing a stream of digital data, e.g., internet protocol (IP) packets, that represent streaming video, identifying which of the IP packets include bit errors, determining to which of a plurality of pixels the IP packets including bit errors belong and identifying such pixels as corrupted pixels, and illuminating only the corrupted pixels on a display of a tool. Corrupted pixels in different time blocks can be displayed with different colors to gain a better appreciation of the bit error rate over time.
摘要翻译：用于分析数字网络的性能的系统和方法包括捕获表示流视频的数字数据流，例如互联网协议（IP）分组，识别哪个IP分组包括比特错误，确定多个包括位错误的IP分组的像素属于并识别诸如损坏的像素的像素，并且仅照亮工具的显示器上的损坏的像素。可以用不同的颜色显示不同时间块中的损坏的像素，以便更好地了解随时间的误码率。

85. 发明申请

US20070158316A1 SYSTEM AND METHOD FOR BLIND LASER BRAZING 审中-公开
标题翻译： BLIND激光打标系统与方法
公开(公告)号：US20070158316A1
公开(公告)日：2007-07-12
申请号：US11306760
申请日：2006-01-10
申请人： John Williams
发明人： John Williams
IPC分类号： B23K26/20
CPC分类号： B23K1/0056 , B23K26/211
摘要： Systems and methods for blind brazing a joining layer positioned between two workpieces. A radiation source emits radiation through one of the workpieces onto the joining layer. The radiation source emits radiation at a wavelength absorbed by the joining layer but not substantially absorbed by the workpiece material. In one embodiment, workpieces are heated to a predicted operating temperature prior to emitting radiation onto the joining layer.
摘要翻译：用于盲目钎焊位于两个工件之间的接合层的系统和方法。辐射源通过其中一个工件发射辐射到接合层上。辐射源以接合层吸收的波长发射辐射，但基本上不被工件材料吸收。在一个实施例中，在将辐射发射到接合层之前，将工件加热到预测的工作温度。

86. 发明申请

US20070157729A1 Non-explosive shockwave generator system and method for hydrodynamic pressure processing of food products 审中-公开
标题翻译：非爆炸冲击波发生器系统及食品流体动力压力加工方法
公开(公告)号：US20070157729A1
公开(公告)日：2007-07-12
申请号：US11329947
申请日：2006-01-10
申请人： John Williams , Peter A. Warren , James Carter
发明人： John Williams , Peter A. Warren , James Carter
IPC分类号： G01N29/04
CPC分类号： A22C9/00 , A23B4/015 , A23L3/015 , A23L5/32 , A23L13/70
摘要： A non-explosive shockwave generator system for hydrodynamic pressure processing of food products, the generator including a volume of fluid about a food product, a piston in a cylinder arranged to strike the volume, and a subsystem for driving the piston to impact the volume of fluid to create a shockwave which travels through the food product.
摘要翻译：一种用于食品的流体动力学压力处理的非爆炸式冲击波发生器系统，该发生器包括围绕食品的一定体积的流体，设置成撞击体积的圆柱体中的活塞，以及用于驱动活塞以冲击体积的子系统流体产生穿过食品的冲击波。

87. 发明申请

US20060243954A1 HIGH TENSION CABLE TO METAL BEAM GUIDE FENCE TRANSITION 失效
标题翻译：高张力电缆到金属光束指导过渡
公开(公告)号：US20060243954A1
公开(公告)日：2006-11-02
申请号：US11381155
申请日：2006-05-02
申请人： John Williams
发明人： John Williams
IPC分类号： E01F15/00
CPC分类号： E01F15/06 , E01F15/0423
摘要： Disclosed is an apparatus for preventing a collision between a vehicle and an end of a Metal Beam Guide Fence. A transition device is attached to a modified section of the Metal Beam Guide Fence. The transition device and modified section are configured to allow passage of cables of a High Tension Cable Barrier through the Metal Beam Guide Fence and the transition device. The High Tension Cable Barrier redirects the colliding vehicle away from the end of the Metal Beam Guide Fence. The transition device and modified section are also configured to interact with the cables of the High Tension Cable Barrier to transfer and spread the collision load from the high tension cables to the Metal Beam Guide Fence.
摘要翻译：公开了一种用于防止车辆与金属梁导向栅栏的端部之间的碰撞的装置。过渡装置连接到金属梁导向栅栏的修改部分。过渡装置和修改部分被配置为允许高张力电缆屏障的电缆通过金属梁导向栅栏和过渡装置。高张力电缆屏障将碰撞的车辆重新导向远离金属梁导轨栅栏的末端。过渡装置和修改部分还被配置为与高张力电缆屏障的电缆相互作用，以将碰撞载荷从高压电缆传送并传播到金属梁导向栅栏。

88. 发明申请

US20060221823A1 Assigning resources to items such as processing contexts for processing packets 有权
公开(公告)号：US20060221823A1
公开(公告)日：2006-10-05
申请号：US11099094
申请日：2005-04-05
申请人： Doron Shoham , Rami Zemach , Moshe Voloshin , Alon Ratinsky , Sarig Livne , John Williams
发明人： Doron Shoham , Rami Zemach , Moshe Voloshin , Alon Ratinsky , Sarig Livne , John Williams
IPC分类号： H04L12/26 , H04L1/00 , G01R31/08
CPC分类号： H04L41/0893 , H04L49/90
摘要： Disclosed are, inter alia, methods, apparatus, data structures, computer-readable media, and mechanisms, for matching items with resources, such as, but not limited to packet processing contexts, output links, memory, storage, specialized hardware or software, compute cycles, or any other entity. One implementation includes means for maintaining distribution groups of items, means for maintaining differently aged resources queues, and means for matching resources identified as being at the head of the plurality of differently aged resources queues and as being primarily and secondarily associated with said distribution groups based on a set of predetermined criteria. For example, even though processing contexts can be shared among different distribution groups of packets, by giving preference to assigning recently used processing contexts for processing packets of a same distribution group, it is more likely that the processing instructions are already in the memory of this processing context, and therefore, processing will not be delayed until such instructions are retrieved into memory.

89. 发明申请

US20060179156A1 Multi-threaded packeting processing architecture 有权
标题翻译：多线程打包处理架构
公开(公告)号：US20060179156A1
公开(公告)日：2006-08-10
申请号：US11054076
申请日：2005-02-08
申请人： Will Eatherton , Earl Cohen , John Fingerhut , Donald Steiss , John Williams
发明人： Will Eatherton , Earl Cohen , John Fingerhut , Donald Steiss , John Williams
IPC分类号： G06F15/173
CPC分类号： H04L47/56 , H04L45/60 , H04L47/50
摘要： A network processor has numerous novel features including a multi-threaded processor array, a multi-pass processing model, and Global Packet Memory (GPM) with hardware managed packet storage. These unique features allow the network processor to perform high-touch packet processing at high data rates. The packet processor can also be coded using a stack-based high-level programming language, such as C or C++. This allows quicker and higher quality porting of software features into the network processor. Processor performance also does not severely drop off when additional processing features are added. For example, packets can be more intelligently processed by assigning processing elements to different bounded duration arrival processing tasks and variable duration main processing tasks. A recirculation path moves packets between the different arrival and main processing tasks. Other novel hardware features include a hardware architecture that efficiently intermixes co-processor operations with multi-threaded processing operations and improved cache affinity.
摘要翻译：网络处理器具有许多新颖的特征，包括多线程处理器阵列，多遍处理模型和具有硬件管理分组存储的全局分组存储器（GPM）。这些独特的功能允许网络处理器以高数据速率执行高触摸包处理。分组处理器也可以使用基于堆栈的高级编程语言（例如C或C ++）进行编码。这样可以更快速地将软件功能移植到网络处理器中。当添加额外的处理功能时，处理器性能也不会严重下降。例如，可以通过将处理元素分配给不同的有界持续时间到达处理任务和可变持续时间主处理任务来更智能地处理分组。再循环路径在不同的到达和主要处理任务之间移动分组。其他新颖的硬件功能包括硬件架构，可以将协处理器操作与多线程处理操作高效地混合，并提高缓存关联度。

90. 发明申请

US20060138315A1 Method and system for calibrating a positron emission tomography system 有权
标题翻译：正电子发射断层扫描系统的校准方法和系统
公开(公告)号：US20060138315A1
公开(公告)日：2006-06-29
申请号：US11025233
申请日：2004-12-29
申请人： John Williams , Alexander Ganin , Charles Stearns , Yiping Shao , Floribertus Philippus Martinus Jansen , Ravindra Manjeshwar
发明人： John Williams , Alexander Ganin , Charles Stearns , Yiping Shao , Floribertus Philippus Martinus Jansen , Ravindra Manjeshwar
IPC分类号： G01T1/164
CPC分类号： G01T1/2985
摘要： Methods and systems for calibrating a positron emission tomography (PET) system are provided. The method includes determining at least one non-acquisition time period for the PET system. The method further includes automatically acquiring calibration data during the at least one non-acquisition time period.
摘要翻译：提供了用于校正正电子发射断层摄影（PET）系统的方法和系统。该方法包括确定PET系统的至少一个非获取时间段。所述方法还包括在所述至少一个非采集时段期间自动获取校准数据。

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