专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明专利

AT118923T 未知
公开(公告)号：AT118923T
公开(公告)日：1995-03-15
申请号：AT89107484
申请日：1989-04-25
申请人： APPLIED MATERIALS INC
发明人： CHENG DAVID , MAYDAN DAN , SOMEKH SASSON , STALDER KENNETH R , ANDREWS DANA L , CHANG MEI , WHITE JOHN M , WONG JERRY YUEN KUI , ZEITLIN VLADIMIR J , WANG DAVID NIN-KOU
IPC分类号： H05H1/46 , B01J3/02 , H01J37/32 , H01L21/00 , H01L21/302 , H01L21/3065 , C23F4/00
摘要： A magnetic field enhanced vacuum single wafer plasma etch reactor (60) is disclosed. The features of the reactor include an electrically-controlled stepped magnetic field for providing high rate uniform etching at high pressures; temperature controlled reactor surfaces including heated anode surfaces (66 I, 67 I) (walls and gas manifold) and a cooled wafer supporting cathode (72) and a unitary wafer exchange mechanism comprising wafer lift pins (79) which extend through the pedestal (72) and a wafer clamp ring (78). The lift pins (79) and clamp ring (78) are moved vertically by a one-axis lift mechanism (140) to accept the wafer (75) from a cooperating external robot blade (76), clamp the wafer (75) to the pedestal (72) and return the wafer (75) to the blade (76). The electrode cooling combines water cooling (170, 172, 174) for the body (128) of the electrode and a thermal conductivity-enhancing gas parallel-bowed interface between the wafer (75) and electrode (72) for keeping the wafer surface cooled despite the high power densities applied to the electrode. A gas feed-through device (175, 176, 178, 180) applies the cooling gas to the RF powered electrode (72) without breakdown of the gas. Protective coatings/layers (811, 83) of materials such as quartz are provided for surfaces such as the clamp ring (78) and gas manifold (80). The combination of these features provides a wide pressure regime, high etch rate, high throughput single wafer etcher (60) which provides uniformity, directionality and selectivity at high gas pressures, operates cleanly and incorporates in-situ self-cleaning capability.

82. 发明专利

SG143229A1 METHODS OF THIN FILM PROCESS 未知
公开(公告)号：SG143229A1
公开(公告)日：2008-06-27
申请号：SG2007183189
申请日：2007-12-04
申请人： APPLIED MATERIALS INC
发明人： INGLE NITIN K , TANG JING , ZHENG YI , YUAN ZHENG , GE ZHENBIN , LU XINLIANG , KAO CHIEN-TEH , BANTHIA VIKASH , CHANG MEI
IPC分类号： H01L21/764 , H01L21/477
摘要： METHODS OF THIN FILM PROCESS A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

83. 发明专利

DE69710961D1 未知
公开(公告)号：DE69710961D1
公开(公告)日：2002-04-18
申请号：DE69710961
申请日：1997-07-11
申请人： APPLIED MATERIALS INC
发明人： ZHAO JUN , SINHA ASHOK , TEPMAN AVI , CHANG MEI , LUO LEE , SCHRIEBER ALEX , SAJOTO TALEX , WOLFF STEFAN , DORNFEST CHARLES , DANEK MICHAEL
IPC分类号： C23C16/44 , C23C16/448 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/205 , H01L21/285 , C23C16/00
摘要： A substrate processing chamber, particularly a chemical vapor deposition (CVD) chamber used both for thermal deposition of a conductive material and a subsequently performed plasma process. The arrangement reduces thermal deposition of the conductive material on peripheral portions of the pedestal (140) supporting a wafer (142) and in a pumping channel (160) exhausting the chamber. A peripheral ring (146) placed on the pedestal, preferably also used to center the wafer, is thermally isolated from the pedestal so that its temperature is kept substantially lower than that of the wafer. Despite its thermal isolation, the peripheral ring is electrically connected to the pedestal to prevent arcing. The pumping channel is lined with various elements (166, 167, 170, 172) some of which are electrically floating and which are designed so that conductive material deposited on these elements do not deleteriously affect a plasma generated for processing the wafer.

84. 发明专利

DE3752259D1 未知
公开(公告)号：DE3752259D1
公开(公告)日：1999-04-22
申请号：DE3752259
申请日：1987-12-18
申请人： APPLIED MATERIALS INC
发明人： WONG JERRY YUEN KUI , CHANG MEI , MAYDAN DAN , WANG DAVID NIN-KOU , MAK ALFRED W S
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/762 , H01L21/306 , H01J37/32
摘要： A process for etching single crystal silicon, polysilicon, silicide and polycide using iodide gas chemistry, is disclosed. The iodide gas chemistry etches narrow deep trenches (10) with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.

85. 发明专利

DE69410053T2 未知
公开(公告)号：DE69410053T2
公开(公告)日：1999-01-07
申请号：DE69410053
申请日：1994-10-14
申请人： APPLIED MATERIALS INC
发明人： TELFORD SUSAN , ARUGA MICHIO , CHANG MEI
IPC分类号： C01B33/06 , C23C16/42 , C23C16/44 , H01L21/28 , H01L21/285
摘要： A process is disclosed for pretreating aluminum-bearing surfaces in a vacuum deposition chamber after a previous step of cleaning the chamber, and prior to depositing tungsten silicide on substrates in the chamber, which first comprises treating the aluminum-bearing surfaces with a mixture of silane and a tungsten-bearing gas, such as WF6, to form a first deposition of a sliane-based tungsten silicide on the aluminum-bearing surfaces. In a preferred embodiment, the process further comprises subsequently treating the already coated aluminum-bearing surfaces of the chamber in a second step with a mixture of a tungsten-bearing gas, such as WF6, and a chlorine-substituted silane such as dichlorosilane (SiH2Cl2), monochlorosilane (SiH3Cl), or trichlorosilane (SiHCl3), to form a chlorine-substituted silane-based tungsten silicide deposition over the previous deposited silane-based tungsten silicide.

86. 发明专利

DE69411307D1 未知
公开(公告)号：DE69411307D1
公开(公告)日：1998-08-06
申请号：DE69411307
申请日：1994-03-31
申请人： APPLIED MATERIALS INC
发明人： LEI LAWRENCE CHUNG-LAI , PERLOV ILYA , LITTAU KARL ANTHONY , MORRISON ALAN FERRIS , CHANG MEI , SINHA ASHOK K
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/68 , H01L21/687 , C23C16/00
摘要： Vacuum CVD chambers are disclosed which provide a more uniformly deposited thin film on a substrate (14). The chamber susceptor mount (210) for the substrate (14) is heated resistively with a single coil firmly contacting the metal of the susceptor on all sides, providing uniform temperatures across the susceptor mount (210) for a substrate (14). A purge gas line (222) is connected to openings in the susceptor outside of the periphery of the substrate (14) to prevent edge and backside contamination of the substrate (14). A vacuum feed line mounts the substrate to the susceptor (210) during processing. A refractory purge guide (226), or a plurality of placement pins, maintain a fixed gap passage for the purge gases to pass alongside the edge of the wafer (14) and into the processing area of the chamber. An exhaust pumping plate improves the uniformity of exhaustion of spent gases from the chamber.

87. 发明专利

DE69030541T2 未知
公开(公告)号：DE69030541T2
公开(公告)日：1997-09-11
申请号：DE69030541
申请日：1990-08-24
申请人： APPLIED MATERIALS INC
发明人： CHANG MEI , LEUNG CISSY , WANG DAVID NIN-KOU , CHENG DAVID
IPC分类号： C23C16/06 , C23C16/08 , C23C16/22 , C23C16/44 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768
摘要： A process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvement comprises forming an insulating layer on said wafer over an integrated circuit structure formed on said wafer; forming an intermediate layer over said insulating layer; and depositing tungsten over said intermediate layer while maintaining a pressure of at least about 2,67 kPa (about 20 Torr) in said deposition chamber.

88. 发明专利

DE69030541D1 未知
公开(公告)号：DE69030541D1
公开(公告)日：1997-05-28
申请号：DE69030541
申请日：1990-08-24
申请人： APPLIED MATERIALS INC
发明人： CHANG MEI , LEUNG CISSY , WANG DAVID NIN-KOU , CHENG DAVID
IPC分类号： C23C16/06 , C23C16/08 , C23C16/22 , C23C16/44 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768
摘要： A process is disclosed for the deposition of a layer of tungsten on a semiconductor wafer in a vacuum chamber wherein the improvement comprises forming an insulating layer on said wafer over an integrated circuit structure formed on said wafer; forming an intermediate layer over said insulating layer; and depositing tungsten over said intermediate layer while maintaining a pressure of at least about 2,67 kPa (about 20 Torr) in said deposition chamber.

89. 发明专利

DE69401549T2 未知
公开(公告)号：DE69401549T2
公开(公告)日：1997-05-22
申请号：DE69401549
申请日：1994-07-28
申请人： APPLIED MATERIALS INC
发明人： CHANG MEI , CISSY LEUNG
IPC分类号： H05H1/46 , C23C16/02 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： A plasma processing apparatus (10) has a chamber (12) with an open top (14) and a cover plate (22) extending across the open top of the chamber. The cover plate (22) has an opening (23) therethrough. An annular shield (30) of an electrical insulating material is secured to the cover plate (22) around the opening (23) and extends partially across the opening. An aluminum showerhead (42) is within the shield (30) and has holes (44) therethrough through which a gas can pass into the chamber (12). The showerhead (42) is connected to a source (56) of RF voltage to provide a flow of RF power between the showerhead (42) and an electrode (52) within the chamber. The shield (30) has a plurality of openings (36) therethrough which allows the RF power to flow through the openings from the showerhead (42) to the electrode (52) in the event that the showerhead (42) becomes coated with particles of an insulating material.

90. 发明专利

DE69029075T2 未知
公开(公告)号：DE69029075T2
公开(公告)日：1997-05-22
申请号：DE69029075
申请日：1990-08-24
申请人： APPLIED MATERIALS INC
发明人： CHANG MEI
IPC分类号： C23C16/44 , C23F4/00 , C23G5/00 , H01L21/00 , H01L21/302 , H01L21/3065 , B08B7/00 , H01L21/285
摘要： An improved process is disclosed for the removal of deposits such as tungsten or tungsten silicide from a susceptor in a vacuum deposition chamber without leaving fluorine residues by first flowing a gaseous source of fluorine into a vacuum deposition chamber and igniting a plasma in the chamber while the gaseous source of fluorine is flowing therein to remove the depositions followed by flowing a gaseous source of hydrogen into the chamber and maintaining a plasma in the chamber during the flow of the gaseous source of hydrogen to remove any fluorine residues from the chamber.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式