专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明公开

KR1020100046576A 트랜지스터 및 이를 포함하는 반도체 소자 有权
标题翻译：包括其的晶体管和半导体器件
公开(公告)号：KR1020100046576A
公开(公告)日：2010-05-07
申请号：KR1020080105474
申请日：2008-10-27
申请人： 삼성전자주식회사
发明人： 박성호 , 송이헌 , 홍기하
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L27/0883 , H01L21/823412 , H01L27/12 , H01L27/1225 , H01L29/78603 , H01L29/7869
摘要： PURPOSE: A transistor and a semiconductor device including the same are provided to easily implement an enhancement mode or depletion mode oxide transistor by controlling a threshold voltage of a transistor. CONSTITUTION: A first threshold voltage control layer(A1) is contacted with a first channel layer. A first source and a first drain(D1) are respectively contacted with both sides of the first channel layer. A first gate electrode(GE1) is separated from the first channel layer. A first gate insulation layer is positioned between the first channel layer and the first gate electrode. The first channel layer is positioned between the first threshold voltage control layer and the first gate insulation layer.
摘要翻译：目的：提供晶体管和包括该晶体管的半导体器件，以通过控制晶体管的阈值电压容易地实现增强模式或耗尽型氧化物晶体管。构成：第一阈值电压控制层（A1）与第一沟道层接触。第一源极和第一漏极（D1）分别与第一沟道层的两侧接触。第一栅电极（GE1）与第一沟道层分离。第一栅极绝缘层位于第一沟道层和第一栅电极之间。第一沟道层位于第一阈值电压控制层和第一栅极绝缘层之间。

82. 发明公开

KR1020090116481A 오메가 게이트 반도체소자 및 상기 오메가 게이트반도체소자의 오메가 게이트용 채널 형성 방법 无效
标题翻译：欧米加门极半导体器件及其相位通道的形成方法
公开(公告)号：KR1020090116481A
公开(公告)日：2009-11-11
申请号：KR1020080042456
申请日：2008-05-07
申请人： 삼성전자주식회사
发明人： 박성호 , 노진서 , 백광현 , 박성일 , 전중석
IPC分类号： H01L21/336
CPC分类号： H01L29/7853
摘要： PURPOSE: An omega gate semiconductor device and a method of forming a channel for omega gate of the same are provided to form an omega type channel on a substrate by removing silicon oxide film on top of a silicon fin and SiGe layer of the substrate surface together. CONSTITUTION: In an omega gate semiconductor device and a method of forming a channel for omega gate of the same, a silicon oxide film(22) on a bulk silicon substrate(21). An Si-fin(25) is formed to be vertical to the substrate by patterning the silicon oxide film and the substrate. A germanium is injected into a substrate surface at both side of the Si-fin. An SiGe layer is formed on the substrate surface at the both sides of the Si-fin by acting a Ge inserted into the substrate with a silicon(Si) of the substrate. An annealing process for forming the SiGe layer is performed under 900°C in a nitrogen gas. The omega style channel is formed on a substrate by removing the silicon oxide film of the Si-fin top and the SiGe layer of the substrate surface together through a wet etching.
摘要翻译：目的：提供一种ω-半导体半导体器件及其形成用于其Ω波导通道的方法，以在衬底上形成Ω型沟道，通过在衬底表面的硅片和SiGe层的顶部上去除氧化硅膜。构成：在欧米茄半导体器件和形成其栅极的沟道的方法中，在体硅衬底（21）上形成氧化硅膜（22）。通过图案化氧化硅膜和衬底，形成与衬底垂直的Si鳍（25）。将锗注入到Si鳍的两侧的衬底表面中。通过用衬底的硅（Si）作用插入到衬底中的Ge，在Si鳍的两侧的衬底表面上形成SiGe层。用于形成SiGe层的退火工艺在900℃下在氮气中进行。通过湿蚀刻将硅衬底表面的氧化硅膜和衬底表面的SiGe层去除，从而在衬底上形成Ω形通道。

83. 发明授权

KR100917365B1 영상 생성 장치 및 방법 有权
标题翻译：用于产生藻类的装置和方法
公开(公告)号：KR100917365B1
公开(公告)日：2009-09-16
申请号：KR1020070081259
申请日：2007-08-13
申请人： 삼성전자주식회사
发明人： 이마이프란시스코 , 최원희 , 권재현 , 이성덕 , 박성호
IPC分类号： H04N9/07 , H04N9/04 , H04N9/64
CPC分类号： H04N9/045 , H04N5/332
摘要： 영생 생성 장치 및 방법이 제공된다. 본 발명의 실시예에 따른 영상 생성 장치는 광학부, 광학부를 통해 입사되는 광신호 중에서 소정 색의 파장에 대한 보색 파장 대역을 통과시키는 광대역 필터(wide-band filter) 영역, 입사된 광신호 중에서 소정 색의 파장 대역을 통과시키는 협대역 필터(narrow-band filter) 영역, 및 입사된 광신호의 모든 파장 대역을 통과시키는 전대역 필터 영역을 포함하는 필터부 및 필터부를 통과한 광신호를 처리하여 영상을 생성하는 영상 생성부를 포함하는데, 영상 생성부는 광신호가 통과한 필터 영역에 따라서 광신호에 가중치를 달리하여 영상을 생성한다.
영상, 합성, 광대역, 다이나믹 레인지, high dynamic range, 감도, 필터

84. 发明公开

KR1020090090853A 나노 또는 마이크로 크기의 다이오드 및 이의 제조 방법 有权
标题翻译：纳米或微尺寸二极管及其制备方法
公开(公告)号：KR1020090090853A
公开(公告)日：2009-08-26
申请号：KR1020080016371
申请日：2008-02-22
申请人： 삼성전자주식회사 , 성균관대학교산학협력단
发明人： 박성호
IPC分类号： H01L29/861 , B82B3/00 , B82B1/00 , B82Y40/00
CPC分类号： H01L51/0587 , H01L51/0037 , H01L51/0038
摘要： A nano or micro size diode and a method for preparing the same are provided to manufacture a diode having uniform quality by including a rectifying layer having a superior p-n junction. A rectifying layer(35) comprises a first electrode(31), a second electrode(33), a first layer(35a), and a second level(35b). The first layer is interposed between the first electrode and the second level. The second level is interposed between the first layer and the second electrode. The second side(35b2) of the first layer has protrusion. A control layer is included between the second electrode and the rectifying layer.
摘要翻译：提供纳米尺寸或微尺寸二极管及其制备方法以通过包括具有优良p-n结的整流层来制造具有均匀品质的二极管。精整层（35）包括第一电极（31），第二电极（33），第一层（35a）和第二层（35b）。第一层介于第一电极和第二电平之间。第二级置于第一层和第二层之间。第一层的第二面（35b2）具有突起。在第二电极和整流层之间包括控制层。

85. 发明公开

KR1020080073019A 나노 또는 마이크로 크기의 유무기 복합 디바이스 및 그의제조방법 无效
标题翻译：纳米或微米有机无机复合材料及其生产方法
公开(公告)号：KR1020080073019A
公开(公告)日：2008-08-08
申请号：KR1020070011501
申请日：2007-02-05
申请人： 삼성전자주식회사 , 삼성에스디아이 주식회사
发明人： 정원철 , 두석광 , 박성호 , 박상철 , 유상훈 , 김성완
IPC分类号： B82B1/00 , B82B3/00 , B82Y20/00
CPC分类号： C25D1/04 , C23C28/00 , H01L51/4253 , H01L51/441 , Y02E10/549 , Y02P70/521 , Y10T428/31533 , Y10T428/31678 , Y10T428/31855
摘要： A nano or micro sized organic-inorganic composite device and a fabrication method thereof are provided to improve the transfer of electron by comprising fullerene-conducting composite and to mass-produce a single unit device having uniform size and quality by employing porous template in fabrication. A nano or micro sized organic-inorganic composite device has a photoactive layer(3) consisting of fullerene-conducting polymer composite between a first electrode(1) and a second electrode(2). The material for the first electrode and the second electrode is selected from Pt, Au, Al, Ni, Mo, W, ITO, carbon or carbon nanotube and conductive polymer. The organic-inorganic composite device optionally has a control layer between the second electrode and the photoactive layer. The material for the control layer is selected from Ag, Cu and Cd. The fullerene is selected from a group consisting of C60 fullerene, C70 fullerene, C76 fullerene, C78 fullerene and C84 fullerene. The conductive polymer is at least one selected from a group consisting of polypyrrole, polyaniline, polythiophene, polypyridine, polyazulene, polyindole, polycarbazole, polyazine, polyquinone, poly(3,4-ethylenedioxythiophene), polyacetylene, polyphenylene sulfide, polyphenylene vinylene, polyphenylene, polyisothianaphthene, poly(2-methoxy-5-(2'-ethyl)hexyloxy-p-phenylene vinylene), indium-tin oxide, indium-zinc oxide, polyethylene dioxythiophene/polystyrene sulfonate mixture, polyfuran, polythienyl vinylene and derivative thereof having alkane chain, carboxylic group and isocyanide functional group. A fabrication method of the organic-inorganic composite device comprises steps of: preparing porous template having a number of hollow channel; forming a first electrode by plating metal at the lower part inside a number of hollow channel of the template; forming a photoactive layer consisting of fullerene-conducting polymer composite on the first electrode in a number of hollow channel of the template; forming a second electrode on the photoactive layer in a number of hollow channels of the template; and removing the template.
摘要翻译：提供纳米或微尺寸的有机 - 无机复合器件及其制造方法，以通过包括富勒烯导电复合材料改进电子传递，并通过在制造中采用多孔模板大量生产具有均匀尺寸和质量的单一单元器件。纳米或微尺寸的有机 - 无机复合器件在第一电极（1）和第二电极（2）之间具有由富勒烯导电聚合物复合材料组成的光敏层（3）。第一电极和第二电极的材料选自Pt，Au，Al，Ni，Mo，W，ITO，碳或碳纳米管和导电聚合物。有机 - 无机复合器件任选地在第二电极和光敏层之间具有控制层。控制层的材料选自Ag，Cu和Cd。富勒烯选自C60富勒烯，C70富勒烯，C76富勒烯，C78富勒烯和C84富勒烯。导电聚合物是选自聚吡咯，聚苯胺，聚噻吩，聚吡啶，聚薁，聚吲哚，聚咔唑，聚嗪，聚醌，聚（3,4-亚乙基二氧噻吩），聚乙炔，聚苯硫醚，聚亚苯基亚乙烯基，聚亚苯基，聚异硫茚，聚（2-甲氧基-5-（2'-乙基）己氧基 - 对亚苯基亚乙烯基），氧化铟锡，氧化铟锌，聚乙烯二氧噻吩/聚苯乙烯磺酸盐混合物，聚呋喃，聚噻吩乙烯及其衍生物，链，羧基和异氰化物官能团。有机 - 无机复合器件的制造方法包括以下步骤：制备具有多个中空通道的多孔模板; 通过在模板的多个中空通道内的下部电镀金属来形成第一电极; 在所述模板的多个空心通道中的所述第一电极上形成由富勒烯导电聚合物复合材料构成的光活性层; 在模板的多个中空通道中的光敏层上形成第二电极; 并删除模板。

86. 发明公开

KR1020080040468A 공기조화기 无效
标题翻译：冷气机
公开(公告)号：KR1020080040468A
公开(公告)日：2008-05-08
申请号：KR1020060108471
申请日：2006-11-03
申请人： 삼성전자주식회사
发明人： 설성관 , 박성호
IPC分类号： F24F1/00 , F24F13/28 , F24F13/08 , F24F13/00
摘要： An air conditioner is provided to open an upper or lower part of a suction hole formed in a front panel alternatively according to the purpose such as air suction or filter separation through the smooth opening/closing operation by the engagement of a rack and pinion instead of using any link. An air conditioner includes a guide element protruded towards a rear part of a front grill, which coupled to a front panel(20) of a main body and opens or closes a suction hole(21) formed in the front panel, and having a guide groove(52) formed with a rack gear part(53). A pinion(45) is inserted into the guide groove for moving the guide element to open an upper part of the suction hole when the air conditioner is in operation while rotating the guide element to open a lower part of the suction hole when separating a filter mounted in the main body.
摘要翻译：提供一种空调器，用于根据诸如通过齿条和小齿轮的接合的平滑打开/关闭操作的空气吸入或过滤器分离等目的而替换地形成在前面板中的吸入孔的上部或下部，而不是使用任何链接。空调器包括朝向前格栅的后部突出的引导元件，其连接到主体的前面板（20）并且打开或关闭形成在前面板中的抽吸孔（21），并且具有引导件形成有齿条部（53）的槽（52）。当空气调节器正在运行时，小齿轮（45）插入导向槽中，用于移动引导元件以打开吸入孔的上部，同时在分离过滤器时旋转引导元件以打开吸入孔的下部安装在主体上。

87. 外观设计

KR3004758620000S 失效
公开(公告)号：KR3004758620000S
公开(公告)日：2008-01-14
申请号：KR3020070025521
申请日：2007-06-13
申请人： 삼성전자주식회사
设计人： 김형배 , 선우남 , 박성호

88. 发明公开

KR1020070069581A 유기금속 화학증착법에 의한 카본파이버의 제조방법 有权
标题翻译：通过金属有机化学气相沉积制备碳纤维的制备方法
公开(公告)号：KR1020070069581A
公开(公告)日：2007-07-03
申请号：KR1020050131879
申请日：2005-12-28
申请人： 삼성전자주식회사
发明人： 박성호 , 이명재 , 구준모 , 서범석
IPC分类号： C01B31/02 , H01J1/30 , B82B3/00 , B82Y40/00
CPC分类号： C23C16/26 , B82Y10/00 , B82Y30/00 , D01F9/127 , H01J9/025 , H01J2201/30469 , H01J2329/00 , Y10T428/2918 , C01B32/05 , B01J6/00 , H01J1/30
摘要： A method of growing carbon fiber at a low temperature, which can grow the carbon fiber at a low temperature of 450 deg.C or less by metal organic chemical vapor deposition, is provided. A preparation method of carbon fiber(20) comprises the steps of: mounting a substrate(10) in a reaction chamber(5), and heating the substrate to a temperature range from 200 to 450 deg.C to maintain the temperature range; preparing an organometallic compound including nickel(Ni) element; vaporizing the organometallic compound to prepare an organometallic compound vapor; and supplying the organometallic compound vapor and a reaction gas including ozone(O3) into the reaction chamber, thereby chemically reacting the organometallic compound vapor with the reaction gas to grow carbon fiber on the substrate. The organometallic compound is at least one material selected from the group consisting of Ni(C5H5)2, Ni(CH3C5H4), Ni(C5H7O2)2, Ni(C11H19O2)2, Ni(C7H16NO) and Ni(C7H17NO)2. The carbon fiber is vertically grown. The substrate is a glass substrate, a sapphire substrate, a plastic substrate, or a silicon substrate.
摘要翻译：提供了一种通过金属有机化学气相沉积在低温下生长碳纤维在低于450℃或更低的温度下生长碳纤维的方法。碳纤维（20）的制备方法包括以下步骤：将基材（10）安装在反应室（5）中，并将基材加热到200-450℃的温度范围，以保持温度范围; 制备包括镍（Ni）元素的有机金属化合物; 蒸发有机金属化合物以制备有机金属化合物蒸气; 并将有机金属化合物蒸气和包含臭氧（O 3）的反应气体供给到反应室中，从而使有机金属化合物蒸气与反应气体化学反应，以在基材上生长碳纤维。有机金属化合物是选自Ni（C 5 H 5）2，Ni（CH 3 C 5 H 4），Ni（C 5 H 7 O 2）2，Ni（C 11 H 19 O 2）2，Ni（C 7 H 16 NO）和Ni（C 7 H 17 NO）2）中的至少一种。碳纤维垂直生长。基板是玻璃基板，蓝宝石基板，塑料基板或硅基板。

89. 发明授权

KR100674965B1 지우기 특성이 개선된 메모리 소자의 제조 방법 有权
标题翻译：存储器件改进的擦除性能的制造方法
公开(公告)号：KR100674965B1
公开(公告)日：2007-01-26
申请号：KR1020050023294
申请日：2005-03-21
申请人： 삼성전자주식회사
发明人： 전상훈 , 김규식 , 김정우 , 박성호 , 한정희 , 민요셉
IPC分类号： H01L21/8247
CPC分类号： H01L21/324 , H01L21/28273 , H01L21/28282
摘要： A method of manufacturing a memory device is provided to secure the stability of erase characteristics by using a blocking oxide layer with a negative fixed oxide charge. A tunneling oxide layer(22), a charge storing layer(23) and a blocking oxide layer(24) are sequentially formed on a semiconductor substrate(20). A heat treatment is performed on the resultant structure under O2, RuO or NH3 gas conditions in order to obtain a negative fixed oxide charge from the blocking oxide layer. A gate electrode layer is formed on the blocking oxide layer. The substrate is partially exposed to the outside by etching selectively the tunneling oxide layer, the charge storing layer, the blocking oxide layer and the gate electrode layer. First and second doped regions are formed in the exposed substrate by using an ion implantation.
摘要翻译：提供一种制造存储器件的方法，以通过使用具有负固定氧化物电荷的阻挡氧化物层来确保擦除特性的稳定性。隧道氧化物层（22），电荷存储层（23）和阻挡氧化物层（24）依次形成在半导体衬底（20）上。在O 2，RuO或NH 3气体条件下对所得结构进行热处理，以从阻挡氧化物层获得负固定的氧化物电荷。在阻挡氧化物层上形成栅极电极层。通过选择性地蚀刻隧道氧化物层，电荷存储层，阻挡氧化物层和栅极电极层，将衬底部分地暴露于外部。通过使用离子注入在暴露的衬底中形成第一和第二掺杂区域。

90. 发明公开

KR1020070000128A 공기조화기 有权
标题翻译：冷气机
公开(公告)号：KR1020070000128A
公开(公告)日：2007-01-02
申请号：KR1020050055629
申请日：2005-06-27
申请人： 삼성전자주식회사
发明人： 박성호
IPC分类号： F24F13/20 , F24F1/00 , F24F13/12 , F24F13/18
摘要： An air conditioner is provided to prevent deviation of a lower grille from a main body even though a heavy decoration glass is attached to a lower panel when the lower panel slides. An air conditioner includes a lower panel(30b) formed with a plurality of protrusions(32) protruded in a cover direction and holding pieces(33) formed at front ends of the respective protrusions. A cover(20) is formed with insertion holes(21) for the holding pieces and slits(22) neighboring the insertion holes and guiding vertical sliding of the protrusions. The holding pieces are positioned in holding parts formed at lower parts of the insertion holes when the protrusions are positioned at lowermost parts of the slits.
摘要翻译：即使在下部面板滑动时，在下部面板上安装了重的装饰玻璃，也设置有空气调节器，以防止下部格栅与主体的偏离。一种空调装置，包括形成有沿着盖方向突出的多个突起（32）的下面板（30b），并且在各突起的前端形成有保持片（33）。一个盖子（20）形成有用于夹持件的插入孔（21）和与插入孔相邻的狭缝（22），并引导突起的垂直滑动。当突起位于狭缝的最下部时，保持件被定位在形成在插入孔的下部的保持部中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式