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    • 83. 发明专利
    • MX161491A
    • 1990-10-10
    • MX46885
    • 1985-10-31
    • CHAON YANG CHEN
    • CHEN CHAO-YANG
    • B25B13/14B25B13/22B25B13/50
    • A wrench suitable for pipe work which includes a handle having two parallel arms, and a body pivotably mounted on the arms by means of a driving gear which passes through two holes provided on the arms, the holes are formed with internal teeth, a rack bar which includes a movable jaw at the forward end thereof and which has a portion slidably received in the body, wherein the driving gear is meshed with the teeth of the rack bar and which has the axis thereof transverse to the handle, when rotating the driving gear, the rack bar moves toward or away from a fixed jaw attached on the body, there are two sector pinions acting as the detent members mounted on the driving gear and operated cooperatively with internal teeth for permitting the uni-directional rotation of the driving gear with respect to the handle.
    • 88. 发明申请
    • SPEECH SIGNAL PROCESSING METHOD AND APPARATUS AND HEARING AID USING THE SAME
    • 语音信号处理方法和装置和听力辅助
    • WO2013139038A1
    • 2013-09-26
    • PCT/CN2012/072940
    • 2012-03-23
    • SIEMENS AKTIENGESELLSCHAFTYANG, Chen
    • YANG, Chen
    • G10L21/02G10L13/02
    • G10L21/013H04R25/505H04R2225/43
    • A speech signal processing method is disclosed. The method includes the steps of: step S1 : converting speech waveform into digital signal; step S2: computing a short-time spectrum from the digital signal obtained in the step SI; step S3 : shifting pitch of the short-time spectrum to obtain a spectrum with modified pitch by using a pitch shift algorithm shown in following formula: F 0 new(n) = CxF 0 origin(n) , wherein F 0 new(n) is tone enhanced pitch contour samples, F 0 origin(n) refers to pitch contour samples of the original speech signal, C is a pitch shifting factor and is larger than 1; step S4: converting the spectrum with modified pitch back to time-domain signal; step S5: re-sampling the time-domain signal obtained in the step S4 to obtain re-sampled speech signal; and step S6: converting the re-sampled speech signal back to waveform.
    • 公开了一种语音信号处理方法。 该方法包括以下步骤:步骤S1:将语音波形转换为数字信号; 步骤S2:从步骤SI中获得的数字信号计算短时频谱; 步骤S3:通过使用以下公式所示的音调移位算法来获得具有改变音调的频谱的频率:F0new(n)= CxF0origin(n),其中F0new(n)是音调增强音调轮廓样本 ,F0origin(n)是指原始语音信号的音调轮廓样本,C是音调移位因子,大于1; 步骤S4:将具有修改的音调的频谱转换回时域信号; 步骤S5:重新采样步骤S4中获得的时域信号以获得重新采样的语音信号; 并且步骤S6:将再采样的语音信号转换回波形。
    • 90. 发明申请
    • NANOSTRUCTURES CONTAINING METAL-SEMICONDUCTOR COMPOUNDS
    • 包含金属半导体化合物的纳米结构
    • WO2005093831A1
    • 2005-10-06
    • PCT/US2005/004459
    • 2005-02-14
    • PRESIDENT AND FELLOWS OF HARVARD COLLEGELIEBER, Charles, M.WU, YueXIANG, JieYANG, ChenLU, Wei
    • LIEBER, Charles, M.WU, YueXIANG, JieYANG, ChenLU, Wei
    • H01L23/49
    • B82Y30/00B82Y10/00H01L29/0673H01L29/068H01L2924/0002H01L2924/00
    • The present invention generally relates to devices and components for use in nanotechnology and sub-microelectronic circuitry that include metal-semiconductor compounds such as metal silicides. The present invention also, in some embodiments, provides methods of forming such devices and components by allowing a first material to diffuse into a second material, optionally creating a new compound. Thus, as an example, metal atoms are allowed to diffuse into a semiconductor to create the metal-semiconductor compound. In some cases, the device may include a component that is a single crystal. Certain metal-semiconductor compounds of the invention have novel physical/electrical properties, for example, low resistivities, high conductivities, high current density capacities, and the like. In some embodiments, a component of the invention may have two or more regions that differ in composition, where one or both of the regions can include a metal-semiconductor compound. In some cases, the regions may be created by using a mask or a nanoscale wire to define the two or more regions.
    • 本发明一般涉及用于纳米技术的器件和组件,以及包括诸如金属硅化物的金属 - 半导体化合物的亚微电子电路。 在一些实施方案中,本发明还提供了通过允许第一材料扩散到第二材料中,任选地产生新化合物来形成这种装置和组分的方法。 因此,作为示例,允许金属原子扩散到半导体中以形成金属 - 半导体化合物。 在一些情况下,该装置可以包括作为单晶的部件。 本发明的某些金属 - 半导体化合物具有新的物理/电学性质,例如低电阻率,高电导率,高电流密度容量等。 在一些实施方案中,本发明的组分可以具有两个或更多个组成不同的区域,其中一个或两个区域可以包括金属 - 半导体化合物。 在一些情况下,可以通过使用掩模或纳米级线来形成区域来限定两个或更多个区域。