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    • 82. 发明授权
    • Sub-rate transmission method for user data services in transmission devices of a metropolitan area network
    • 用于城域网传输设备用户数据业务的子速率传输方法
    • US07660313B2
    • 2010-02-09
    • US11113411
    • 2005-04-22
    • Wu YangQianfeng Xu
    • Wu YangQianfeng Xu
    • H04L12/56
    • H04L12/4645
    • The present invention discloses a sub-rate transmission method for user data services in transmission devices of a Metropolitan Area Network (MAN). The method comprises the steps of: pre-configuring each transmission device to form forwarding table items representing corresponding relationship between self-defined tags and transmission lines; after receiving a user data frame, an original transmission device nesting a self-defined tag into the user data frame according to the forwarding table items to form a self-defined data frame, then transmitting the self-defined data frame; and after receiving the self-defined data frame, a terminal transmission device determining an output port for transferring the data frame by searching the forwarding table items with the nested self-defined tag, then deleting the nested self-defined tag and sending the original user data frame to the output port. The present invention, by nesting a self-defined tag, can greatly increase the number of Virtual Local Area Networks (VLANs) accommodated by a MAN as well as simplify the configuration of tags for user data to bring more convenience to users.
    • 本发明公开了一种用于城域网(MAN)的传输设备中的用户数据业务的子速率传输方法。 该方法包括以下步骤:预配置每个传输设备以形成表示自定义标签与传输线之间对应关系的转发表项; 在接收到用户数据帧之后,根据转发表项将原始传输设备嵌套到用户数据帧中以形成自定义数据帧,然后发送自定义数据帧; 并且在接收到自定义数据帧之后,终端传输装置通过使用嵌套的自定义标签搜索转发表项来确定用于传送数据帧的输出端口,然后删除嵌套的自定义标签并发送原始用户 数据帧到输出端口。 本发明通过嵌套自定义标签可以大大增加MAN容纳的虚拟局域网(VLAN)的数量,并简化用户数据的标签配置,为用户带来更多便利。
    • 84. 发明申请
    • METHODS OF FORMING NITRIDE READ ONLY MEMORY AND WORD LINES THEREOF
    • 形成硝酸盐的方法只读存储器及其字线
    • US20090061609A1
    • 2009-03-05
    • US11874061
    • 2007-10-17
    • Chi-Pin LuLing-Wu Yang
    • Chi-Pin LuLing-Wu Yang
    • H01L21/3205H01L21/44
    • H01L27/11568H01L21/0337H01L21/32139H01L29/513H01L29/792
    • A method of forming word lines of a memory includes providing a substrate and forming a conductive layer on the substrate. A metal silicide layer is formed on the conductive layer, and a mask pattern is formed on the metal silicide layer. A mask liner covering the mask pattern and the surface of the metal silicide layer is formed on the substrate to shorten distances between the word line regions. An etching process is performed on the mask liner and the mask pattern until the partial surface of the metal silicide layer is exposed. The metal silicide layer and the conductive layer are etched to form word lines by utilizing the mask liner and the mask pattern as a mask. A silicon content of the metal silicide layer must be less than or equal to 2 for reducing a bridge failure rate between the word lines.
    • 形成存储器字线的方法包括提供衬底并在衬底上形成导电层。 在导电层上形成金属硅化物层,在金属硅化物层上形成掩模图形。 覆盖掩模图案的掩模衬垫和金属硅化物层的表面形成在衬底上以缩短字线区域之间的距离。 对掩模衬垫和掩模图案进行蚀刻处理,直到暴露金属硅化物层的部分表面。 通过利用掩模衬垫和掩模图案作为掩模,蚀刻金属硅化物层和导电层以形成字线。 金属硅化物层的硅含量必须小于或等于2,以减少字线之间的桥接故障率。