专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20100091556A1 MAGNETO-RESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：US20100091556A1
公开(公告)日：2010-04-15
申请号：US12637009
申请日：2009-12-14
申请人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
发明人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： G11C11/00 , H01F1/00
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译：可以减少自旋注入写入所需的电流。磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。

82. 发明授权

US07663171B2 Magneto-resistance effect element and magnetic memory 失效
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US07663171B2
公开(公告)日：2010-02-16
申请号：US11228326
申请日：2005-09-19
申请人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
发明人： Tomoaki Inokuchi , Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： H01L29/76
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译：可以减少自旋注入写入所需的电流。磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。

83. 发明授权

US07652913B2 Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁存储器
公开(公告)号：US07652913B2
公开(公告)日：2010-01-26
申请号：US11608969
申请日：2006-12-11
申请人： Hideyuki Sugiyama , Yoshiaki Saito , Tomoaki Inokuchi
发明人： Hideyuki Sugiyama , Yoshiaki Saito , Tomoaki Inokuchi
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , Y10S977/933 , Y10S977/935
摘要： It is made possible to cause spin inversion at a low current density which does not cause element destruction and to conduct writing with a small current. A magnetoresistance effect element includes: a magnetization pinned layer in which magnetization direction is pinned; a magnetic recording layer in which magnetization direction is changeable, the magnetization direction in the magnetization pinned layer forming an angle which is greater than 0 degree and less than 180 degrees with a magnetization direction in the magnetic recording layer, and the magnetization direction in the magnetic recording layer being inverted by injecting spin-polarized electrons into the magnetic recording layer; and a non-magnetic metal layer provided between the magnetization pinned layer and the magnetic recording layer.
摘要翻译：可以在不会导致元件破坏并以小电流进行写入的低电流密度下引起自旋反转。磁阻效应元件包括：磁化固定层，其中磁化方向被钉扎; 磁化方向可变化的磁记录层，磁化钉扎层中的磁化方向形成大于0度且小于180度的磁化记录层中的磁化方向的磁化方向和磁记录层中的磁化方向记录层通过将自旋极化电子注入磁记录层而被反转; 以及设置在磁化被钉扎层和磁记录层之间的非磁性金属层。

84. 发明授权

US07602636B2 Spin MOSFET 有权
标题翻译：旋转MOSFET
公开(公告)号：US07602636B2
公开(公告)日：2009-10-13
申请号：US11771295
申请日：2007-06-29
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： G11C11/00
CPC分类号： H01L29/66984 , B82Y25/00 , H01F10/1936 , H01F10/3254 , H01F10/3272
摘要： A spin MOSFET includes: a semiconductor substrate; a first magnetic film formed on the semiconductor substrate and including a first ferromagnetic layer, a magnetization direction of the first ferromagnetic layer being pinned; a second magnetic film formed on the semiconductor substrate to separate from the first magnetic film and including a magnetization free layer, a first nonmagnetic layer being a tunnel insulator and provided on the magnetization free layer, and a magnetization pinned layer provided on the first nonmagnetic layer, a magnetization direction of the magnetization free layer being changeable and a magnetization direction of the magnetization pinned layer being fixed; a gate insulating film provided at least on the semiconductor substrate between the first magnetic film and the second magnetic film; and a gate electrode formed on the gate insulating film.
摘要翻译：自旋MOSFET包括：半导体衬底; 形成在所述半导体衬底上并包括第一铁磁层的第一磁性膜，所述第一铁磁层的磁化方向被钉扎; 形成在所述半导体基板上以与所述第一磁性膜分离并且包括无磁化层的第二磁性膜，作为隧道绝缘体的第一非磁性层并且设置在所述磁化自由层上，以及设置在所述第一非磁性层上的磁化固定层磁化自由层的磁化方向是可变的，并且磁化固定层的磁化方向是固定的; 在所述第一磁性膜和所述第二磁性膜之间至少设置在所述半导体基板上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。

85. 发明授权

US07511991B2 Spin-injection magnetic random access memory 有权
标题翻译：旋转注入磁性随机存取存储器
公开(公告)号：US07511991B2
公开(公告)日：2009-03-31
申请号：US11750856
申请日：2007-05-18
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi , Yoshihisa Iwata
IPC分类号： G11C11/00 , G11C11/14
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译：根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线，辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流

86. 发明申请

US20080062580A1 SPIN MEMORY AND SPIN FET 有权
标题翻译：旋转存储器和转子FET
公开(公告)号：US20080062580A1
公开(公告)日：2008-03-13
申请号：US11846040
申请日：2007-08-28
申请人： Tomoaki INOKUCHI , Yoshiaki Saito , Hideyuki Sugiyama
发明人： Tomoaki INOKUCHI , Yoshiaki Saito , Hideyuki Sugiyama
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/66984
摘要： A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction changes, and a first nonmagnetic layer between the first and second ferromagnetic layers, a lower electrode and an upper electrode extending in a direction between 45 degrees and 90 degrees relative to an axis of hard magnetization of the second ferromagnetic layer, and sandwiching the magneto-resistance element at one end in a longitudinal direction, a switching element connected to another end in a longitudinal direction of the lower electrode, and a bit line connected to another end in a longitudinal direction of the upper electrode, wherein writing is carried out by supplying spin-polarized electrons to the second ferromagnetic layer and applying a magnetic field from the lower electrode and the upper electrode to the second ferromagnetic layer.
摘要翻译：自旋存储器包括磁阻元件，其具有其中磁化方向被钉扎的第一铁磁层，磁化方向改变的第二铁磁层和第一和第二铁磁层之间的第一非磁性层，下电极和相对于第二铁磁层的硬磁化轴在45度和90度之间的方向延伸的上电极，并且在纵向方向的一端夹着磁阻元件，开关元件连接到另一端下电极的纵向方向和与上电极的纵向方向上的另一端连接的位线，其中通过向第二铁磁层提供自旋极化电子并从下电极施加磁场来进行写入，以及上电极到第二铁磁层。

87. 发明申请

US20070253120A1 MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY 审中-公开
标题翻译：磁电效应元件和磁记忆
公开(公告)号：US20070253120A1
公开(公告)日：2007-11-01
申请号：US11737379
申请日：2007-04-19
申请人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
发明人： Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
IPC分类号： G11B5/33
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , H01F10/132 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/329 , H01L27/228 , H01L43/08
摘要： It is possible to provide a magnetoresistive effect element which has thermal stability even if it is made fine and in which the magnetization in the magnetic recording layer can be inverted at a low current density. A magnetoresistive effect element includes: a magnetization pinned layer having a magnetization pinned in a direction; a magnetization free layer of which magnetization direction is changeable by injecting spin-polarized electrons into the magnetization free layer; a tunnel barrier layer provided between the magnetization pinned layer and the magnetization free layer; a first antiferromagnetic layer provided on the opposite side of the magnetization pinned layer from the tunnel barrier layer; and a second antiferromagnetic layer which is provided on the opposite side of the magnetization free layer from the tunnel barrier layer and which is thinner in thickness than the first antiferromagnetic layer.
摘要翻译：可以提供一种具有热稳定性的磁阻效应元件，即使其变细，并且磁记录层中的磁化可以以低电流密度反转。磁阻效应元件包括：具有沿方向固定的磁化的磁化固定层; 通过将自旋极化电子注入到磁化自由层中，磁化方向可变化的磁化自由层; 设置在磁化固定层和磁化自由层之间的隧道势垒层; 第一反铁磁层，设置在与所述隧道势垒层的所述磁化被钉扎层的相对侧上; 以及第二反铁磁层，其设置在所述磁化自由层的与所述隧道势垒层相反的一侧，并且其厚度比所述第一反铁磁性层更薄。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式