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81. 发明授权

US07142354B2 Wavelength conversion method, wavelength conversion device, and laser beam machine 有权
标题翻译：波长转换方法，波长转换装置和激光束机
公开(公告)号：US07142354B2
公开(公告)日：2006-11-28
申请号：US10511170
申请日：2001-12-12
申请人： Tetsuo Kojima , Susumu Konno , Shuichi Fujikawa , Koji Yasui , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura
发明人： Tetsuo Kojima , Susumu Konno , Shuichi Fujikawa , Koji Yasui , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura
IPC分类号： G02F1/35 , H01S3/108
CPC分类号： G02F1/3501 , G02F2001/3505
摘要： In a wavelength converting method, an ambient that is in contact with a surface of a non-linear optical crystal from which wavelength-converted light is outputted is a gas that is lower in content of nitrogen than air. A wavelength converting device includes a device for controlling the ambient in contact with a surface of the non-linear optical crystal from which the wavelength-converted light is outputted so the ambient is lower in nitrogen than air. A laser machining device includes the wavelength converting device.
摘要翻译：在波长转换方法中，与输出波长转换光的非线性光学晶体的表面接触的环境是氮含量低于空气的气体。波长转换装置包括用于控制与非线性光学晶体的表面接触的环境的装置，从该波长转换光输出波长转换的光，使得氮气中的环境比空气低。激光加工装置包括波长转换装置。

82. 发明申请

US20060165578A1 Cesium-lithium-borate crystal and its application to frequency conversion of laser light 有权
标题翻译：铯硼酸锂晶体及其应用于激光的变频
公开(公告)号：US20060165578A1
公开(公告)日：2006-07-27
申请号：US11315134
申请日：2005-12-23
申请人： Takatomo Sasaki , Akio Hiraki , Yusuke Mori , Sadao Nakai
发明人： Takatomo Sasaki , Akio Hiraki , Yusuke Mori , Sadao Nakai
IPC分类号： C01B35/10
CPC分类号： C30B29/22 , C30B15/00 , C30B17/00 , C30B29/10 , G02F1/353 , G02F1/3551 , G02F1/3553 , G02F1/37 , G02F2201/16
摘要： The present invention provides a cesium-lithium-borate crystal, which can be used as a high-performance wavelength converting crystal, having a chemical composition expressed as CsLiB6O10, and substituted cesium-lithium-borate crystals expressed by the following formula: Cs1-xLi1-yMx+yB6O10 or Cs2(1−z)Li2LzB12O20 (where, M is an alkali metal element, and L is an alkali earth metal element); a method for manufacturing same by heating and melting; and an optical apparatus using such crystals.
摘要翻译：本发明提供一种可用作具有以CsLiB6O10表示的化学组成的高性能波长转换晶体的铯 - 硼酸锂晶体和由下式表示的取代的铯 - 锂 - 硼酸盐晶体：<β -line-formula description =“In-line Formulas”end =“lead”？> Cs> Li Li Li Li Li x x x x x x x / / / / / / / / / / / / / / / / / β-in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“在线公式”end =“lead”？>或<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line 2“（1-z）2”>“2”>“2”> - > （式中，M为碱金属元素，L为碱土类金属元素）（式中，M为碱金属元素） ; 通过加热和熔融制造相同方法; 以及使用这种晶体的光学装置。

83. 发明授权

US07058103B2 Light-emitting apparatus, phosphor, and method of producing it 有权
公开(公告)号：US07058103B2
公开(公告)日：2006-06-06
申请号：US10647107
申请日：2003-08-25
申请人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
发明人： Masaya Ishida , Tatsuya Morioka , Daisuke Hanaoka , Mototaka Taneya , Shigeo Fujita , Yoichi Kawakami , Masafumi Harada , Takatomo Sasaki , Yusuke Mori
IPC分类号： H01S3/08
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： A light-emitting apparatus composed of a light source that emits primary light and a phosphor that absorbs the primary light and emits secondary light offers high brightness, low power consumption, and a long lifetime while minimizing adverse effects on the environment. The phosphor is formed of a III–V group semiconductor in the form of fine-particle crystals each having a volume of 2 800 nm3 or less. The light emitted from the fine-particle crystals depends on their volume, and therefore giving the fine-particle crystals a predetermined volume distribution makes it possible to adjust the wavelength range of the secondary light.

84. 发明申请

US20050153471A1 Method of manufacturing group-III nitride crystal 有权
标题翻译： III族氮化物晶体的制造方法
公开(公告)号：US20050153471A1
公开(公告)日：2005-07-14
申请号：US10999338
申请日：2004-11-29
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Ryu Hirota
IPC分类号： C30B29/38 , C30B11/00 , C30B11/12 , C30B19/02 , C30B29/40 , H01L21/208 , H01L21/00
CPC分类号： C30B29/403 , C30B11/00 , C30B11/04 , C30B29/406
摘要： There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.
摘要翻译：提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中熔体的表面和基板的表面设定为至多50mm。

85. 发明授权

US06551528B1 Wavelength conversion crystal and method for generating laser beam, and apparatus for generating laser beam 失效
标题翻译：波长转换晶体和产生激光束的方法，以及用于产生激光束的装置
公开(公告)号：US06551528B1
公开(公告)日：2003-04-22
申请号：US09647137
申请日：2000-11-14
申请人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura
发明人： Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura
IPC分类号： G02B520
CPC分类号： G02F1/3551 , G02F1/37 , H01S3/109 , H01S3/1095 , H01S3/1611
摘要： As a wavelength conversion crystal whose double refraction index is controllable, a crystal represented by a formula (I), M1xM21−xCa4O(BL3)3, where each of M1 and M2 represents one or more types of different rare earth elements and 0
摘要翻译：作为双重折射率可控的波长转换晶体，由式（I）表示的晶体M1xM21-xCa4O（BL3）3，其中M1和M2各自表示一种或多种不同的稀土元素，0

86. 发明授权

US08574361B2 Group-III element nitride crystal producing method and group-III element nitride crystal 有权
标题翻译： III族元素氮化物晶体制造方法和III族元素氮化物晶体
公开(公告)号：US08574361B2
公开(公告)日：2013-11-05
申请号：US12524811
申请日：2008-03-05
申请人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
发明人： Osamu Yamada , Hisashi Minemoto , Kouichi Hiranaka , Takeshi Hatakeyama , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Yasuo Kitaoka
IPC分类号： H01L21/322
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

87. 发明授权

US08231729B2 Apparatus for producing nitride single crystal 有权
标题翻译：用于生产氮化物单晶的设备
公开(公告)号：US08231729B2
公开(公告)日：2012-07-31
申请号：US12192428
申请日：2008-08-15
申请人： Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
发明人： Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura , Shiro Yamasaki
IPC分类号： C30B11/04
CPC分类号： C30B9/10 , C30B19/02 , C30B19/06 , C30B29/403 , Y10T117/10 , Y10T117/1024
摘要： It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material.
摘要翻译：公开了一种使用含有易氧化物质的助熔剂生长氮化物单晶的装置。该装置具有用于储存焊剂的坩埚; 压力容器，用于储存所述坩埚并给至少含有氮气的气氛充电; 设置在压力容器内并从坩埚中排出的炉料; 加热炉附着在炉料上; 以及覆盖炉料的耐碱和耐热金属层。

88. 发明授权

US08227324B2 Method for producing group III nitride-based compound semiconductor crystal 有权
标题翻译：制备III族氮化物基化合物半导体晶体的方法
公开(公告)号：US08227324B2
公开(公告)日：2012-07-24
申请号：US12448207
申请日：2007-12-10
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/20
CPC分类号： C30B19/02 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02625
摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.
摘要翻译：在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解在助焊剂混合物中。

89. 发明授权

US08216365B2 Method for producing a semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US08216365B2
公开(公告)日：2012-07-10
申请号：US12073178
申请日：2008-02-29
申请人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B25/18
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.
摘要翻译：本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐在x轴方向。因此，在m平面上存在支撑工具与晶种接触的三个接触点。支撑工具具有在垂直方向上延伸的两个支撑构件。一个支撑构件具有相对于水平面α倾斜30°的端部。在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

90. 发明申请

US20120168695A2 GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL 有权
标题翻译：第三类元素氮化物晶体生产方法和第三类元素氮化物晶体
公开(公告)号：US20120168695A2
公开(公告)日：2012-07-05
申请号：US12524811
申请日：2008-03-05
申请人： Osamu YAMADA , Hisashi MINEMOTO , Kouichi HIRANAKA , Takeshi HATAKEYAMA , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA , Yasuo KITAOKA
发明人： Osamu YAMADA , Hisashi MINEMOTO , Kouichi HIRANAKA , Takeshi HATAKEYAMA , Takatomo SASAKI , Yusuke MORI , Fumio KAWAMURA , Yasuo KITAOKA
IPC分类号： H01B1/06 , C30B17/00 , C01B21/06
CPC分类号： H01L31/03044 , C30B9/10 , C30B11/12 , C30B19/02 , C30B29/403 , C30B29/406 , G02B1/02
摘要： A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel.
摘要翻译：提供了以高晶体生长速度生产高质量III族元素氮化物晶体的方法和III族元素氮化物晶体。该方法包括以下步骤：将III族元素，碱金属和III族元素氮化物的晶种放置在晶体生长容器中，在含氮气体的气氛中加压和加热晶体生长容器，导致III族元素和氮在III族元素，碱金属和氮的熔体中彼此反应，从而使用晶种作为核生长III族元素氮化物晶体。在晶体生长容器的加压和加热之前，加入沸点高于碱金属的熔点的烃。

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