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    • 81. 发明申请
    • Semiconductor memory device
    • 半导体存储器件
    • US20070002648A1
    • 2007-01-04
    • US11260200
    • 2005-10-28
    • Hitoshi IkedaKaoru MoriYoshiaki Okuyama
    • Hitoshi IkedaKaoru MoriYoshiaki Okuyama
    • G11C29/00
    • G11C29/02G11C11/401G11C29/025
    • An equalizing circuit connects a pair of bit lines to each other in response to the activation of an equalizing control signal and connects the pair of bit lines to a precharge voltage line. An equalizing control circuit deactivates the equalizing control signal in response to the activation of a first timing signal. A word line driving circuit activates one of word lines in response to the activation of a second timing signal. A first signal generating circuit of a timing control circuit generates the first timing signal. A second signal generating circuit of the timing control circuit activates the second timing signal after the deactivation of the equalizing control signal accompanying the activation of the first timing signal. A delay control circuit of the second signal generating circuit delays an activation timing of the second timing signal in a test mode from that in a normal mode.
    • 均衡电路响应于均衡控制信号的激活而将一对位线彼此连接,并将一对位线连接到预充电电压线。 均衡控制电路响应于第一定时信号的激活而去激活均衡控制信号。 字线驱动电路响应于第二定时信号的激活而激活字线之一。 定时控制电路的第一信号发生电路产生第一定时信号。 定时控制电路的第二信号发生电路在伴随第一定时信号的激活的均衡控制信号的去激活之后激活第二定时信号。 第二信号发生电路的延迟控制电路将测试模式中的第二定时信号的激活定时与正常模式中的激活定时相比较。
    • 83. 发明授权
    • Semiconductor memory automatically carrying out refresh operation
    • 半导体存储器自动执行刷新操作
    • US07099208B2
    • 2006-08-29
    • US11011114
    • 2004-12-15
    • Yoshiaki OkuyamaKaoru Mori
    • Yoshiaki OkuyamaKaoru Mori
    • G11C7/00
    • G11C11/406G11C11/40603G11C29/783
    • An arbiter judges which of an internal access request and an external access request takes higher priority, when the internal access request conflicts with the external access request. A redundancy judgement circuit judges which of a normal memory cell and a redundancy memory cell is accessed, in accordance with each of the internal access request and the external access request. When the arbiter gives higher priority to the internal access request, the redundancy judgement circuit carries out redundancy judgement for the external access request during internal access operation. To prevent the malfunction of a memory core, a hold circuit holds redundancy judged result, and prevents the redundancy judged result for the external access request from being transmitted to the memory core that carries out the internal access operation.
    • 当内部访问请求与外部访问请求冲突时,仲裁员会判断哪个内部访问请求和外部访问请求具有较高优先级。 根据内部访问请求和外部访问请求中的每一个,冗余判断电路判断访问正常存储单元和冗余存储单元中的哪一个。 当仲裁器给予内部访问请求更高的优先级时,冗余判断电路在内部访问操作期间对外部访问请求执行冗余判断。 为了防止存储器核心的故障,保持电路保持冗余判断结果,并且防止外部访问请求的冗余判断结果被发送到执行内部访问操作的存储器核心。
    • 84. 再颁专利
    • Chemical data handling system
    • 化学数据处理系统
    • USRE37803E1
    • 2002-07-23
    • US08616225
    • 1996-03-15
    • Shigeki KusabaFutoshi ImamuraMasako YamamotoKaoru Mori
    • Shigeki KusabaFutoshi ImamuraMasako YamamotoKaoru Mori
    • G06F1500
    • G06F3/0485G06F19/708G06T11/206G09G5/34Y10S707/99934Y10S715/961
    • A chemical data handling system is characterized by a display system which displays each data of many compound with an image of a table sheet where the chemical structures are arranged in the direction X and general characteristic data items are arranged in the direction Y. For realizing the display of the entire large scale data table, the system provides a special scroll function. In the case of lateral scroll, the chemical structure display column arranged vertically is fixed at the left side of screen, and the remaining data columns are scrolled laterally. In the case of a vertical scroll, the data item display row arranged laterally is fixed at the upper side of screen, and the remaining data rows are scrolled vertically. Moreover, it is possible to display not only the data table but also a chemical structure list or a chemical data correlation graph.
    • 化学数据处理系统的特征在于显示系统,其显示许多化合物的数据,其中化学结构沿X方向排列的表格的图像,并且一般特征数据项沿Y方向排列。为了实现 显示整个大型数据表,系统提供了特殊的滚动功能。 在横向滚动的情况下,垂直排列的化学结构显示栏固定在屏幕的左侧,剩余的数据列横向滚动。 在垂直滚动的情况下,横向布置的数据项显示行固定在屏幕的上侧,并且剩余的数据行被垂直滚动。 此外,不仅可以显示数据表,还可以显示化学结构列表或化学数据相关图。
    • 85. 发明授权
    • Semiconductor integrated circuit and semiconductor memory device including overdriving sense amplifier
    • 半导体集成电路和包括过驱动读出放大器的半导体存储器件
    • US06236605B1
    • 2001-05-22
    • US09501269
    • 2000-02-09
    • Kaoru MoriAyako KitamotoMasato MatsumiyaMasato TakitaShinichi YamadaKoichi NishimuraAtsushi Hatakeyama
    • Kaoru MoriAyako KitamotoMasato MatsumiyaMasato TakitaShinichi YamadaKoichi NishimuraAtsushi Hatakeyama
    • G11C700
    • G11C7/08G11C5/025G11C5/14G11C7/065G11C11/4074G11C11/4091G11C29/02G11C29/021G11C29/028G11C2207/065
    • A transistor of a driver in the semiconductor integrated circuit according to the present invention has its gate connected to a controlling circuit, and has its drain connected to a sense amplifier. The controlling circuit supplies the gate of the transistor with a gate-to-source voltage exceeding or below other power supply voltages. The drain-to-source resistance of the transistor in the on state becomes sufficiently lower as compared with that in the case of supplying the power supply voltages between the gate and source of the transistor. Accordingly, the amplifying speed of the sense amplifier is heightened without altering the sense amplifier and the driver. Besides, the amplifying speed of the sense amplifier is heightened without raising the power supply voltage which supplies the carriers to the driver. The semiconductor memory device according to the present invention switches the driving supply voltage for the sense amplifier from the first supply voltage, to the second supply voltage lower than the first voltage. The timing at which the first supply voltage is switched to the second supply voltage is controlled in accordance with the voltage on a dummy bit line which is driven by a monitoring sense amplifier. Accordingly, even when the driving speed of the sense amplifier using the overdriving system has fluctuated due to the fluctuation of the first supply voltage, the driving supply voltage of the sense amplifier can be always switched to the second supply voltage at the appropriate timing.
    • 根据本发明的半导体集成电路中的驱动器的晶体管的栅极连接到控制电路,并且其漏极连接到读出放大器。 控制电路为晶体管的栅极提供超过或低于其他电源电压的栅极至源极电压。 与在晶体管的栅极和源极之间提供电源电压的情况相比,导通状态下的晶体管的漏极 - 源极电阻变得足够低。 因此,增强了读出放大器的放大速度,而不改变读出放大器和驱动器。 此外,增强读出放大器的放大速度,而不会提高向驱动器提供载波的电源电压。 根据本发明的半导体存储器件将读出放大器的驱动电源电压从第一电源电压切换到低于第一电压的第二电源电压。 根据由监视读出放大器驱动的虚拟位线上的电压来控制第一电源电压切换到第二电源电压的定时。 因此,即使当使用过驱动系统的读出放大器的驱动速度由于第一电源电压的波动而波动时,也可以在适当的定时将读出放大器的驱动电源电压始终切换到第二电源电压。