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    • 88. 发明申请
    • Semiconductor memory device
    • 半导体存储器件
    • US20090097332A1
    • 2009-04-16
    • US12285520
    • 2008-10-08
    • Jin-Young KimKi-Whan Song
    • Jin-Young KimKi-Whan Song
    • G11C7/00G11C8/08
    • G11C5/147G11C11/4076G11C11/4091G11C11/4094G11C2211/4016
    • A semiconductor memory device includes a memory cell array including a plurality of memory cells having a transistor with a floating body, a source line driver configured to control the source lines to select the memory cells in response to an address signal, a source line voltage generation unit configured to generate a source line target voltage, receive an source line output voltage from the source line driver, compare the level of the source line output voltage with the level of the source line target voltage, generate a source line voltage of which the level is adaptively varied according to a temperature, and a sense amplifier configured to sense a difference in current flowing through the bit lines in response to data read from a selected memory cell, amplify the difference to a level having high output driving capability and output the amplified current.
    • 半导体存储器件包括存储单元阵列,该存储单元阵列包括具有浮置体的晶体管的多个存储器单元,源极线驱动器,被配置为响应于地址信号控制源极线选择存储单元,源极线电压产生 被配置为产生源极线路目标电压的单元,从源极线驱动器接收源极线路输出电压,将源极线路输出电压的电平与源极线路目标电压的电平进行比较,生成源极线电压, 根据温度自适应地变化;以及读出放大器,被配置为响应于从选择的存储单元读取的数据来感测流过位线的电流差,将该差放大到具有高输出驱动能力的电平,并输出放大的 当前。