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81. 发明专利

JP2001147215A DEVICE FOR DETECTING ANALYTE IN SAMPLE BASED ON ORGANIC MATERIAL 失效
公开(公告)号：JP2001147215A
公开(公告)日：2001-05-29
申请号：JP2000278114
申请日：2000-09-13
申请人： IMEC INTER UNI MICRO ELECTR
发明人： BARTIC CARMEN , POORTMANS JEF , BAERT KRIS
IPC分类号： G01N27/414 , G01N27/00 , G01N27/416
摘要： PROBLEM TO BE SOLVED: To detect an analyte in a sample. SOLUTION: A device for detecting an analyte in a sample is equipped with an active layer comprising at least a dielectric material, a source electrode, a drain electrode and a semiconducting substrate operated as a current pathway between source and drain. The conductance of the semiconductor substrate can be affected by the interaction of a sample containing an analyte to be detepted and the active layer. The device is produced such that a properties like low price, disposability, reduced drift of the device and suitability for biomedical and pharmaceutical applications are obtained. To fulfill these requirements, the device described in this application is based on organic containing materials.

82. 发明专利

JP2000286816A HIGH SPEED WIRELESS OFDM TRANSCEIVER MODEM 失效
公开(公告)号：JP2000286816A
公开(公告)日：2000-10-13
申请号：JP2000039284
申请日：2000-02-17
申请人： IMEC INTER UNI MICRO ELECTR
发明人： EBERLE WOLFGANG , VAN DER PERRE LIESBET , THOEN STEVEN , GYSELINCKX BERT , ENGELS MARC
IPC分类号： H04J11/00
摘要： PROBLEM TO BE SOLVED: To provide the flexible and efficient reception and/or transmission device of an orthogonal frequency division/multiplex signal by setting specified second signal and the first signal of a second part to be the orthogonal frequency division multiplex signals. SOLUTION: A time synchronization circuit 17, a conversion circuit 103 and a first frequency domain circuit 105 are installed. The time synchronization circuit 17 is applied for deciding control information from a first signal. The first signal is formed of a first part being a non.orthogonal frequency division/ multiplex signal and a second part being an orthogonal frequency division/ multiplex signal and the first part of the first signal is used for the decision of control information. The time synchronization circuit 17 is applied for converting the second part of the first signal into a second signal being time domain expression. The conversion circuit 103 converts the second signal into a third signal being frequency domain expression. The first frequency domain circuit 105 converts the third signal into a first output signal. The second signal and the first signal of the second part are the orthogonal frequency division multiplex signals.

83. 发明专利

JP2000154008A PRODUCING METHOD OF FERROELECTRIC THIN FILM BY USING SOLGEL METHOD 失效
公开(公告)号：JP2000154008A
公开(公告)日：2000-06-06
申请号：JP4825699
申请日：1999-02-25
申请人： IMEC INTER UNI MICRO ELECTR , LIMBURGS UNIV CT
发明人： WOUTERS DIRK , NORGA GERD , MAES HERMAN , NOUWEN RIA , MULLENS JULES , FRANCO DIRK , YPERMAN JAN , VAN POUCKE LUCIEN C
IPC分类号： C01G25/00 , C23C18/12 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/10 , H01L27/108 , C01B25/00
摘要： PROBLEM TO BE SOLVED: To easily form a PZT thin film of high quality having specified film thickness by forming layers of a PZT precursor soln. diluted with butoxyethanol for several times to specified thickness by solgel method, heat treating the layers to remove the solvent and then pyrolyzing to crystallize them. SOLUTION: A layer of a PZT precursor soln. which is diluted with butoxyethanol and is an alkoxy type liquid prepared by solgel method and having a polymer structure with

84. 发明专利

JP2000152088A PIXEL STRUCTURE FOR IMAGE PICKUP DEVICE 失效
公开(公告)号：JP2000152088A
公开(公告)日：2000-05-30
申请号：JP26547999
申请日：1999-09-20
申请人： IMEC INTER UNI MICRO ELECTR
发明人： BARUTO DIIRIKKUSU
IPC分类号： G01J1/44 , H01L27/14 , H01L27/146 , H01L31/10 , H04N5/355 , H04N5/359 , H04N5/365 , H04N5/3745 , H04N5/335
摘要： PROBLEM TO BE SOLVED: To provide a pixel structure and a pixel read method which improve the picture quality of an image pickup device based on the pixels. SOLUTION: A pixel 10 consists of a radiation detector 1 and an adjustable current source 2, which supplies a large current, in the parallel circuit constitution. A 4-transistor pixel structure is disclosed. A method to obtain a corrected read signal of a pixel provided with at least a photoelectric element and a current source consists of a step where the photoelectric current generated in the pixel is read out in the period when the current generated by the current source parallel with the photoelectric element is added to the photoelectric current, to obtain a first signal a step where the current source is turned off to read out the pixel and a second signal is obtained, and a step where the first signal is subtracted from the second signal and the result is amplified to obtain a read signal.

85. 发明专利

JP2000141300A MANUFACTURING OF MICROSTRUCTURE HAVING INTERNAL CAVITY 失效
公开(公告)号：JP2000141300A
公开(公告)日：2000-05-23
申请号：JP10929799
申请日：1999-04-16
申请人： CP CLARE CORP , IMEC INTER UNI MICRO ELECTR
发明人： TILMANS HENDRIKUS A C , BEYNE ERIC , VAN DE PEER MYRIAM
IPC分类号： B81C1/00 , B81B7/00 , G01L9/00 , G01P15/08 , G01P15/125 , H01H1/00 , H01H35/14 , H01L23/02 , H03H3/007
摘要： PROBLEM TO BE SOLVED: To easily form a microstructure having an internal cavity by forming a hollow on a first layer after the first layer is formed on a first substrate, forming a second layer on a second substrate, and arranging and bonding the first substrate and the second substrate. SOLUTION: In the manufacturing of a microstructure having an internal cavity such as a microaccelerometer, a microgyroscope, a microtube or the like, at least a first layer 3 is manufactured with a solder layer composed of, for example, PbSn with the substantially closed geometrical layout, on a first substrate, and a hollow 4 is formed on a part of the first layer 3 by a photographic lithographic method and/or chemical method. Further a second layer 6 is formed on a second substrate 5 with the substantially closed geometrical layout. Then the first substrate 1 is placed on the second substrate to be bonded, whereby the microstructure having a cavity 8 defined on the basis of the closed geometrical layout of the first layer 3 and the second layer 6 can be formed.

86. 发明专利

JPH11312682A METALLIC WIRING STRUCTURE USING FLUORINE-CONTAINING DIELECTRIC AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH11312682A
公开(公告)日：1999-11-09
申请号：JP1993399
申请日：1999-01-28
申请人： IMEC INTER UNI MICRO ELECTR
发明人： MAEX KAREN , RODIONOVICH BAKLANOV MIKHAIL , VANHAELEMEERSCH SERGE
IPC分类号： H01L21/3205 , H01L21/283 , H01L21/312 , H01L23/532
摘要： PROBLEM TO BE SOLVED: To lower contact resistance with a silicon layer or a silicon substrate, by forming a barrier layer in a region held by a conductive pattern and a fluorine dielectric, and composing the barrier layer of a layer consisting of a conductive material and a layer made up of a fluoride brought into contact with the fluorine dielectric in the region. SOLUTION: A fluorine-containing dielectric is formed onto a substrate, and a barrier layer composed of a conductive material is formed onto one surface, from which the fluorine-containing dielectric is exposed. The conductive material and the fluorine-containing dielectric are reacted, the fluoride of the conductive material is formed between the barrier layer and the fluorine-containing dielectric, and at least one kind of a metal is precipitated on the barrier layer and metallic wiring structure is manufactured. It is preferable that a reaction between the conductive material and the fluorine-containing dielectric can be promoted by heating the substrate, and room temperature-500 deg.C is preferable and 50-400 deg.C is more preferable as a heating temperature. When Cu or a Cu alloy is used as a metal, it is preferable that the Cu barrier layer, through which Cu is not passed, is formed onto the conductive material before the precipitation of the metal.

87. 发明专利

JPH11233481A METHOD AND APPARATUS FOR REMOVING A LIQUID FROM ROTATING SUBSTRATE SURFACE 失效
公开(公告)号：JPH11233481A
公开(公告)日：1999-08-27
申请号：JP30625698
申请日：1998-09-22
申请人： IMEC INTER UNI MICRO ELECTR
发明人： MERTENS PAUL , MEURIS MARK , HEYNS MARC
IPC分类号： F26B5/08 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/308
摘要： PROBLEM TO BE SOLVED: To effectively remove a liquid from the upper surface of a substrate, by supplying a gaseous substance on the substrate surface which substance generates a mixture having a surface tension lower than that of the liquid when mixed with the liquid. SOLUTION: Nozzles 6 are so arranged that center lines of the nozzles 6 draw concentric circles on a surface, thereby forming curvature arranged at the center of a substrate 2, i.e., a liquid-vapor boundary on the upper surface of the substrate 2. When an arm 3 is moved from the central part to the peripheral part, the boundary is gradually induced to the outside, so that liquid or solution of the liquid is removed from the upper surface of the substrate 2. The liquid-vapor boundary is positioned between the nozzles 6 supplying the gaseous substance for decreasing the surface tension and the nearest nozzle 6 jetting the liquid. By using this method, fresh liquid is supplied to the liquid- vapor boundary, together with the gaseous substance of very low concentration which decreases surface tension. As a sew removal of the liquid is made maximum.

88. 发明专利

JPH06350134A INASSB LIGHT-EMITTING DIODE AND ITS USAGE METHOD 失效
公开(公告)号：JPH06350134A
公开(公告)日：1994-12-22
申请号：JP636694
申请日：1994-01-25
申请人： IMEC INTER UNI MICRO ELECTR
发明人： UIMU DOBERAERE , GUSUTAAFU REJIINA BORUSU
IPC分类号： H01L33/00 , H01L33/30 , H01S5/00 , H01S3/18
摘要： PURPOSE: To obtain a light-emitting diode with a predetermined light-emitting wavelength during active operation by using beryllium, as a p -doping device, and an InAs1-x Sbx bulk layer using silicon as an n -doping device, in a p-n junction portion, and setting a composition ratio to be variable within a specific range. CONSTITUTION: The InAs core-formation layer is grown on a GaAs substrate 11, and a dislocation net is formed in the InAs/GaAs interface, based on a great lattice incommensuration between the InAs layer and the GaAs layer. Next, the InAs1-x Sbx layer is grown, and doping is performed by using Be as the p -doping device and Si and the n -doping device, to obtain an InAs1-x Sbx epitaxial layer 10. The p-n doping connection portion consists of a p -heavily doped layer 13, a p -doped layer 14, an n -doped layer 15 and an n -heavily doped layer 16, and has a composition ratio variable X appropriately ranging from 0 to 1. Next, Ti/Au metallization is performed on outer surfaces 17 and 18 of the light-emitting diode structure.

89. 发明专利

JP2003133229A MASK PATTERN IMAGING APPARATUS 审中-公开
公开(公告)号：JP2003133229A
公开(公告)日：2003-05-09
申请号：JP2002317564
申请日：2002-10-31
申请人： IMEC INTER UNI MICRO ELECTR
发明人： PFORR RAINER , WITTEKOEK STEVE , SELTMANN ROLF
IPC分类号： G03F1/08 , G03F7/20 , G03F7/207 , G03F9/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a mask pattern imaging apparatus capable of continuously carrying out alignment between a substrate and a mask on a substrate plane and alignment of a mask mark and an image plane position on the basis of light diffraction by an alignment mark provided on the substrate and an alignment mark provided on the mask arranged to be separated from the substrate. SOLUTION: An latent image detection means generates an optical measuring signal where the amplitude of an optical detection signal is a function of the contrast of an alignment mark latent image by making the spatial frequency of the mask mark substantially equivalent to the effective resolving power of a projection lens system and significantly larger than the resolving power of an alignment means.

90. 发明专利

JP2000358014A METHOD AND DEVICE FOR MULTIUSER TRANSMISSION 失效
公开(公告)号：JP2000358014A
公开(公告)日：2000-12-26
申请号：JP2000116651
申请日：2000-04-18
申请人： IMEC INTER UNI MICRO ELECTR
发明人： VANDENAMEELE PATRICK
IPC分类号： H04J99/00 , H04B7/08 , H04J11/00 , H04J15/00
摘要： PROBLEM TO BE SOLVED: To attain improvement in the performance/cost ratio of a high speed radio network by providing a method and a device for multiuser transmission. SOLUTION: This method is provided for transmitting data signals 50 from at least two transmitting terminals 20 respectively having at least one transmitting means 60 to at least one receiving terminal 40 having a spatial diversity receiving means 80. A converted data signal 70, for which the data signal is converted, is transmitted from the transmitting terminal 20, reception data signals at least as the functions of at least two data signals in the converted data signal 70 are received by the spatial diversity means 80 and sub-band processing is performed to at least two received data signals by the receiving terminal 40 (90). In the receiving terminal, an estimate value 120 of the data signal is determined from the received data signal 140 to which the sub-band processing is performed.

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