专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07655537B2 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US07655537B2
公开(公告)日：2010-02-02
申请号：US12186948
申请日：2008-08-06
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/30
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A method of fabricating composite substrates by associating a transfer layer with an intermediate support to form an intermediate substrate of predetermined thickness with the transfer layer having a free surface; providing a sample carrier having a surface and a recess that has a depth that is approximate the same as the predetermined thickness of the intermediate substrate so that the transfer layer free surface is positioned flush with the sample carrier surface; providing a support layer both on the transfer layer free surface and on a portion of the sample carrier surface surrounding the recess; removing the portion of the support layer that extends beyond the intermediate substrate; and detaching the transfer layer and support layer from its intermediate support to form the composite substrate. The support layer is made of a deposited material that has a lower quality than that of the intermediate support. A bonding layer may be included on one of the intermediate support or the useful layer, or both, to facilitate bonding of the layers. The final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种通过使转印层与中间载体缔合以形成具有预定厚度的中间基底的方法，该转印层具有自由表面; 提供具有表面的样品载体和具有与中间基板的预定厚度大致相同的深度的凹部，使得转印层自由表面与样品载体表面齐平; 在转移层自由表面和围绕凹部的样品载体表面的一部分上提供支撑层; 移除延伸超过中间基板的支撑层的部分; 并且从中间支撑件分离转移层和支撑层以形成复合衬底。支撑层由具有比中间支撑件低的质量的沉积材料制成。粘合层可以包括在中间支撑体或有用层之一或两者上，以便于层的粘合。最终的底物可用于光学，电子或光电子应用。

82. 发明授权

US07648888B2 Apparatus and method for splitting substrates 有权
标题翻译：用于分离衬底的装置和方法
公开(公告)号：US07648888B2
公开(公告)日：2010-01-19
申请号：US11337655
申请日：2006-01-24
申请人： Thierry Barge , Walter Schwarzenbach , Jean-Marc Waechter , Thuan Truong , Bruno Ghyselen
发明人： Thierry Barge , Walter Schwarzenbach , Jean-Marc Waechter , Thuan Truong , Bruno Ghyselen
IPC分类号： H01L21/46
CPC分类号： H01L21/67092 , B28D1/322 , B28D5/0005 , Y10T83/0476 , Y10T225/10 , Y10T225/30 , Y10T225/371
摘要： The invention relates to a method of splitting apart a substrate of two adjoining wafers defining between them a cleavage plane, by bringing each substrate into a substrate-receiving space; and clamping first and second jaw portions onto each substrate in such a manner as to hold each substrate and urge apart the two wafers of each substrate by co-operation between the shapes of housings in first and second portions of the two jaws, respectively. The invention also relates to a splitting method that includes bringing each substrate into a substrate-reception space; clamping together separator portions onto each substrate so as to split apart the two wafers of each substrate; and clamping the split-apart substrate wafers so as to hold the wafers together. An automated system for processing multiple substrates is also provided.
摘要翻译：本发明涉及一种通过将每个衬底引入衬底接收空间来分开限定在它们之间的两个邻接晶片的衬底分离平面的方法; 并且以这样的方式将第一和第二钳口部分夹紧到每个衬底上，以便分别保持每个衬底并且通过在两个钳口的第一和第二部分中的壳体的形状之间的协作来分开每个衬底的两个晶片。本发明还涉及一种分割方法，其包括将每个基板进入基板接收空间; 将分离器部分夹在每个基板上，以将每个基板的两个晶片分开; 并夹紧分离的基板晶片以将晶片保持在一起。还提供了一种用于处理多个基板的自动化系统。

83. 发明授权

US07602046B2 Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof 有权
标题翻译：通过机械方式回收利用包括多层结构在内的薄片的薄片
公开(公告)号：US07602046B2
公开(公告)日：2009-10-13
申请号：US11075323
申请日：2005-03-07
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
IPC分类号： H01L29/26
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The invention relates to a recyclable donor wafer that includes a substrate and a formed layer thereon, wherein the formed layer has a thickness sufficient to provide (a) at least two useful layers for detachment therefrom and (b) additional material that can be removed to planarize exposed surfaces of the useful layers prior to detachment from the donor wafer.
摘要翻译：本发明涉及一种可回收的施主晶片，其包括基板及其上的成形层，其中所形成的层具有足以提供（a）至少两个用于从其分离的有用层的厚度，以及（b）可以将其移除到在与供体晶片分离之前平坦化有用层的暴露表面。

84. 发明授权

US07407869B2 Method for manufacturing a free-standing substrate made of monocrystalline semiconductor material 有权
标题翻译：制造由单晶半导体材料制成的独立基板的方法
公开(公告)号：US07407869B2
公开(公告)日：2008-08-05
申请号：US11212795
申请日：2005-08-29
申请人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
发明人： Bruno Ghyselen , Fabrice Letertre , Carlos Mazure
IPC分类号： H01L21/365
CPC分类号： C30B29/36 , H01L21/76254
摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaph on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.
摘要翻译：一种制造由半导体材料制成的自立式基板的方法。提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。第三种材料优选是单晶材料。而且，至少将衬底加热到外延生长温度来保存接合界面的可去除特性。第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。

85. 发明授权

US07268060B2 Method for fabricating a substrate with useful layer on high resistivity support 有权
标题翻译：在高电阻率支撑件上制造具有有用层的衬底的方法
公开(公告)号：US07268060B2
公开(公告)日：2007-09-11
申请号：US10968695
申请日：2004-10-18
申请人： Bruno Ghyselen , Hubert Moriceau
发明人： Bruno Ghyselen , Hubert Moriceau
IPC分类号： H01L21/30
CPC分类号： H01L21/3225 , H01L21/3226 , H01L21/76254 , H01L29/32
摘要： A method for fabricating a substrate containing a useful semiconductor layer on a support having high resistivity by: preparing a base substrate of a semiconductor material containing a controlled quantity of interstitial oxygen, heat treating the base substrate to achieve at least partial precipitation of the interstitial oxygen therein, removing a superficial layer over a controlled depth from a surface of the base substrate that intended to receive a useful layer, forming the useful layer on the surface of the base substrate, with the base substrate serving as a support for the useful layer. This method is applicable in particular to SOI substrates having high resistivity for use in forming high frequency electronic circuits.
摘要翻译：一种在具有高电阻率的支持体上制造含有有用的半导体层的基板的方法，该方法包括：制备含有受控量的间隙氧的半导体材料的基底，热处理基底以实现间隙氧的至少部分沉淀在基底基板的表面上，在基底基板的表面上从受控的深度去除表层，形成有用层，基底基板作为有用层的支撑体。该方法特别适用于用于形成高频电子电路的具有高电阻率的SOI衬底。

86. 发明授权

US07265029B2 Fabrication of substrates with a useful layer of monocrystalline semiconductor material 有权
标题翻译：用有用的单晶半导体材料层制造衬底
公开(公告)号：US07265029B2
公开(公告)日：2007-09-04
申请号：US10883437
申请日：2004-07-01
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , C30B25/02 , C30B25/18 , C30B29/403 , C30B29/406 , H01L21/185 , H01L21/7605 , H01L29/1608 , Y10S438/967
摘要： Methods for fabricating a semiconductor substrate. In an embodiment, the technique includes providing an intermediate support, providing a nucleation layer, and providing at least one bonding layer between the intermediate support and the nucleation layer to improve the bonding energy therebetween, and to form an intermediate assembly. The method also includes providing at least one layer of a semiconductor material upon the nucleation layer, bonding a target substrate to the deposited semiconductor material to form a final support assembly comprising the target substrate, the deposited semiconductor material, and the intermediate assembly, and processing the final support assembly to remove the intermediate assembly. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on the target substrate.
摘要翻译：半导体衬底的制造方法。在一个实施方案中，该技术包括提供中间支撑体，提供成核层，并且在中间支撑体和成核层之间提供至少一个结合层，以改善它们之间的结合能力，并形成中间组件。该方法还包括在成核层上提供至少一层半导体材料，将目标衬底粘合到沉积的半导体材料上以形成包括目标衬底，沉积的半导体材料和中间组件的最终支撑组件，以及处理最后的支撑组件去除中间组件。结果是在目标衬底上包括至少一层半导体材料的半导体衬底。

87. 发明授权

US07262113B2 Methods for transferring a useful layer of silicon carbide to a receiving substrate 有权
标题翻译：将有用的碳化硅层转移到接收衬底的方法
公开(公告)号：US07262113B2
公开(公告)日：2007-08-28
申请号：US11196733
申请日：2005-08-04
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L21/30
CPC分类号： H01L21/02032 , H01L21/187 , H01L21/2007 , H01L21/26586 , H01L21/266 , H01L21/7602 , H01L21/76254
摘要： Methods for transferring a useful layer of silicon carbide to a receiving substrate are described. In an embodiment, the invention relates to a method for recycling of a silicon carbide source substrate by removal of the excess zone followed by a finishing step to prepare the source substrate for recycling and reuse. Preferably, the excess zone is removed by a thermal budget where the temperature and time of such treatment causes exfoliation of the excess zone. The finishing step is performed in a manner to provide the desired surface roughness for the substrate so that it can be recycled for re-use. The technique includes implanting at least H+ ions through a front face of a source substrate of silicon carbide with an implantation energy E greater than or equal to 95 keV and an implantation dose D chosen to form an optimal weakened zone near a mean implantation depth, the optimal weakened zone defining the useful layer and a remainder portion of the source substrate. The method also includes bonding the front face of the source substrate to a contact face of the receiving substrate, and detaching the useful layer from the remainder portion of the source substrate along the weakened zone while minimizing or avoiding forming an excess zone of silicon carbide material at the periphery of the useful layer that was not transferred to the receiving substrate during detachment.
摘要翻译：描述了将有用的碳化硅层转移到接收衬底的方法。在一个实施方案中，本发明涉及一种通过去除过量区域再循环碳化硅源衬底的方法，随后进行精整步骤以制备用于再循环和再利用的源衬底。优选地，通过热预算去除过量区域，其中这种处理的温度和时间引起过剩区域的剥离。精加工步骤以为基材提供所需的表面粗糙度的方式进行，使得其可再循环以供再利用。该技术包括将至少H + +离子注入到具有大于或等于95keV的注入能量E的碳化硅源极基底的前表面上，并且选择植入剂量D以形成最佳弱化区域，平均植入深度附近，最佳弱化区域限定有用层和源极衬底的剩余部分。该方法还包括将源极基板的正面接合到接收基板的接触面，并且沿着弱化区域将有用层与源极基板的剩余部分分离，同时最小化或避免形成碳化硅材料的过剩区域在有用层的外围，在分离期间未被转移到接收基板。

88. 发明授权

US07145214B2 Substrate for stressed systems and method of making same 失效
公开(公告)号：US07145214B2
公开(公告)日：2006-12-05
申请号：US11287371
申请日：2005-11-28
申请人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
发明人： Fabrice Letertre , Bruno Ghyselen , Olivier Rayssac
IPC分类号： H01L29/00
CPC分类号： H01L21/187 , B81C1/00365 , B81C2201/0191 , C30B25/183 , H01L21/0237 , H01L21/0243 , H01L21/02439 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L21/02664 , H01L21/76254
摘要： A stress absorbing microstructure assembly including a support substrate having an accommodation layer that has plurality of motifs engraved or etched in a surface, a buffer layer and a nucleation layer. The stress absorbing microstructure assembly may also include an insulating layer between the buffer layer and the nucleation layer. This assembly can receive thick epitaxial layers thereon with concern of causing cracking of such layers.

89. 发明申请

US20060216907A1 Method of fabricating a semiconductor hetero-structure 有权
公开(公告)号：US20060216907A1
公开(公告)日：2006-09-28
申请号：US11147575
申请日：2005-06-07
申请人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
发明人： Ian Cayrefourcq , Fabrice Letertre , Bruno Ghyselen
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/76251
摘要： A method of fabricating a structure that includes at least one semiconductor material for applications in microelectronics, optoelectronics or optics. The method includes transferring, onto a support made of a first material, a thin monocrystalline layer made of a second material that differs from the first material, and performing a predetermined heat treatment carrying out at least one strengthening step on a bonding interface between the thin layer and the support. The thickness of the thin layer is selected as a function of the difference between the coefficients of thermal expansion of the first and second materials and as a function of parameters of predetermined heat treatment, such that the stresses exerted by the heat treatment on the assembly of the support and the transferred thin layer leaves the assembly intact. The method further includes depositing an additional thickness of the second material in the monocrystalline state on the thin layer to thicken it. The method is useful for fabrication of hetero-substrates with a relatively thick useful layer.

90. 发明申请

US20060186397A1 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US20060186397A1
公开(公告)日：2006-08-24
申请号：US11402047
申请日：2006-04-12
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L29/06 , H01L29/12
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。这些最终的底物可用于光学，电子或光电子应用。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式