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81. 发明授权

US5793785A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5793785A
公开(公告)日：1998-08-11
申请号：US509695
申请日：1995-07-31
申请人： Hideyuki Nakanishi , Akio Yoshikawa , Hirokazu Shimizu
发明人： Hideyuki Nakanishi , Akio Yoshikawa , Hirokazu Shimizu
IPC分类号： H01S5/02 , H01S5/022 , H01S5/026 , H01S5/18 , H01S3/19 , H01S3/045
CPC分类号： H01S5/02292 , H01S5/02252 , H01S5/02296 , H01S5/0683 , H01S5/3202
摘要： Radiating light from a semiconductor laser element is radiated in a direction normal to the surface of a photodetector substrate. The semiconductor laser element and photodetector are disposed on the same plane. Specifically, a reflecting mirror surface formed of a slanting surface of (111) lattice plane having a ridge line of direction is disposed on a silicon substrate of (100) lattice plane having an off-angle of 4.degree. to 14.degree. about an axis of direction or on a silicon substrate of (511) lattice plane having an off-angle of 1.degree. to 11.degree. about an axis of direction. The semiconductor laser chip is disposed at a position opposing to the reflecting mirror surface.
摘要翻译：来自半导体激光元件的散射光沿着与光检测器基板的表面垂直的方向辐射。半导体激光元件和光电检测器设置在同一平面上。具体地说，在具有<110>方向的棱线的（111）晶格面倾斜表面形成的反射镜表面设置在离开角度为4°至14°的（100）晶格面的硅衬底上（511）晶格面的硅基板上，沿着<110>方向的轴线偏离为1°至11°。半导体激光芯片设置在与反射镜表面相对的位置。

82. 发明授权

US5773968A Internal voltage conversion circuit 失效
标题翻译：内部电压转换电路
公开(公告)号：US5773968A
公开(公告)日：1998-06-30
申请号：US716786
申请日：1996-09-11
申请人： Hideaki Kondo , Akinori Shibayama
发明人： Hideaki Kondo , Akinori Shibayama
IPC分类号： G05F3/24 , G05F1/46 , G05F1/56 , G11C11/407 , G05F3/16
CPC分类号： G05F1/465
摘要： A voltage conversion circuit that includes a reference voltage generation circuit, an output circuit, and an output control circuit. The reference voltage generation circuit outputs a first reference voltage and a second reference voltage which is higher than the first reference voltage by a predetermined voltage. Based on the first reference voltage, the output circuit outputs an internally converted voltage. The output control circuit reduces the internally converted voltage when the control circuit outputs a higher internally converted voltage than the second reference voltage. In accordance with the voltage conversion circuit, even when there occurs an increase in the internally converted voltage due to the flow of very small leakage currents between an external power supply and the internal voltage conversion circuit, the internally converted voltage is lowered by the output control circuit when it exceeds the second reference voltage output from the reference voltage generation circuit. This prevents an excess increase in the internally converted voltage, which ensures that internal elements in the semiconductor integrated circuit can be fed a stable voltage.
摘要翻译：一种电压转换电路，包括参考电压产生电路，输出电路和输出控制电路。参考电压产生电路输出比第一参考电压高一预定电压的第一参考电压和第二参考电压。基于第一参考电压，输出电路输出内部转换的电压。当控制电路输出比第二参考电压更高的内部转换电压时，输出控制电路减小内部转换的电压。根据电压转换电路，即使由于外部电源和内部电压转换电路之间的非常小的漏电流的流动而发生内部转换电压的增加，内部转换的电压也被输出控制当它超过从参考电压产生电路输出的第二参考电压时。这防止内部转换的电压的过度增加，这确保了半导体集成电路中的内部元件能够被馈送稳定的电压。

83. 发明授权

US5760550A Color picture tube 失效
标题翻译：彩色显像管
公开(公告)号：US5760550A
公开(公告)日：1998-06-02
申请号：US706224
申请日：1996-09-03
申请人： Masahiko Sukeno , Takashi Watanabe
发明人： Masahiko Sukeno , Takashi Watanabe
IPC分类号： H01J29/50 , H01J29/58
CPC分类号： H01J29/503
摘要： An in-line color picture tube compensates for the distortion in the illuminated spot at the peripheral portion of the screen in a horizontally oblong shape. In particular, with an increase in the beam diameter under large current, or flattening of the panel or increase in the deflection angle, the beam distorted easily. However, such distortion is made to be small by providing a quadrupole lens with strong power. The in-line color picture tube has an electron gun comprising three cathodes that are in-line arranged in horizontal direction, a control electrode, an accelerating electrode and a focusing electrode system. The focusing electrode system comprises a couple of focusing electrodes having the facing portion on which non-circular beam through holes are provided. A predetermined focus voltage is applied to the first focusing electrode. A voltage changing in accordance with a deflection angle of the beam is applied to the second focusing electrode. A beam through holes that are oblong vertically are provided on the control electrode facing the cathode; and the beam through holes that are oblong horizontally are provided on the control electrode facing the accelerating electrode.
摘要翻译：在线彩色显像管以横向长方形补偿屏幕周边部分的照明光斑的变形。特别地，随着大电流下的光束直径的增加或面板的变平或偏转角的增加，光束容易变形。然而，通过提供具有强大功率的四极透镜，使得这种变形变小。直列式彩色显像管具有电子枪，该电子枪包括沿水平方向排成一列的三个阴极，控制电极，加速电极和聚焦电极系统。聚焦电极系统包括一对聚焦电极，其具有设置有非圆形光束通孔的面对部分。预定的聚焦电压被施加到第一聚焦电极。根据光束的偏转角度改变的电压被施加到第二聚焦电极。在面向阴极的控制电极上设置有长方形垂直的梁通孔，长方形水平的光束通孔设置在与加速电极相对的控制电极上。

84. 发明授权

US5759923A Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits 失效
标题翻译：用于在集成电路中制造二氧化硅和硅玻璃层的方法和装置
公开(公告)号：US5759923A
公开(公告)日：1998-06-02
申请号：US615806
申请日：1996-03-14
申请人： Larry D. McMillan , Michael C. Scott , Carlos A. Paz de Araujo , Tatsuo Otsuki , Shinichiro Hayashi
发明人： Larry D. McMillan , Michael C. Scott , Carlos A. Paz de Araujo , Tatsuo Otsuki , Shinichiro Hayashi
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/00
CPC分类号： H01L21/316 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1212 , C23C18/1287 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/316 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.
摘要翻译：制备在二甲苯溶剂中包含硅的前体液体，将基底放置在真空沉积室内，使前体液体雾化，并将雾流入沉积室，同时将室保持在环境温度以沉积一层前体液体在基底上。将液体干燥，烘烤和退火以在基底上形成二氧化硅或硅玻璃的薄膜。然后，完成集成电路以将至少一部分二氧化硅或硅玻璃层作为集成电路中的电子器件的绝缘体。

85. 发明授权

US5757120A Color cathode ray tube with decenterable magnetic body 失效
标题翻译：彩色阴极射线管，带有可靠的磁性体
公开(公告)号：US5757120A
公开(公告)日：1998-05-26
申请号：US733402
申请日：1996-10-18
申请人： Masanobu Honda , Isao Yonetani
发明人： Masanobu Honda , Isao Yonetani
IPC分类号： H01J29/76 , H01J29/74
CPC分类号： H01J29/76 , H01J2229/7031
摘要： A color cathode ray tube device is provided in which the generation of the trapezoidal distortion of a rectangular raster is controlled and an off-axis misconvergence is corrected to obtain high image quality in the peripheral portion of a screen. An annular ferrite core is provided adjacently to the electron gun side end face of a ferrite core of a deflection yoke so as to b decentered radially within the predetermined range around the central axis of the deflection yoke in the tube axial direction. An asymmetric magnetic field is formed on the electron gun side of the deflection yoke by the annular ferrite core which has been decentered. Thus, the off-axis misconvergence can be corrected while controlling the generation of the trapezoidal distortion.
摘要翻译：提供了一种彩色阴极射线管装置，其中控制矩形光栅的梯形失真的产生，并且校正离轴失会聚以在屏幕的周边部分中获得高图像质量。与偏转线圈的铁氧体磁心的电子枪侧端面相邻设置有环状的铁氧体磁芯，从而沿着管轴方向偏心偏转在偏转线圈的中心轴线附近的规定范围内。通过已经偏心的环形铁氧体磁心，在偏转线圈的电子枪侧形成非对称磁场。因此，可以在控制梯形失真的产生的同时校正离轴失会聚。

86. 发明授权

US5751650A Electric signal supply circuit and semiconductor memory device 失效
标题翻译：电信号电路和半导体存储器件
公开(公告)号：US5751650A
公开(公告)日：1998-05-12
申请号：US724664
申请日：1996-10-01
申请人： Hiroshige Hirano , Tetsuji Nakakuma
发明人： Hiroshige Hirano , Tetsuji Nakakuma
IPC分类号： G11C5/06 , G11C11/22
CPC分类号： G11C11/22 , G11C5/063
摘要： In an electric signal supply circuit, a signal generating source and a plurality of circuit cells are connected to each other by a wire line through resistors. Signal wire lines from the signal generating source to the respective circuit cells are formed in the form of a pyramid, and therefore, delay time differences to the circuit cells are reduced. Since delay time differences in a signal to the circuit cells from the signal generating source which is disposed at ends of the plurality of circuit cells are smaller, a circuit operation is stable.
摘要翻译：在电信号供给电路中，信号发生源和多个电路单元通过电阻线通过有线线连接。从信号发生源到各个电路单元的信号线以金字塔的形式形成，因此减小了对电路单元的延迟时间差。由于设置在多个电路单元的端部的来自信号发生源的电路单元的信号的延迟时间差较小，电路操作稳定。

87. 发明授权

US5747922A Color picture tube and in-line electron gun with focusing electrodes having elongated through holes 失效
标题翻译：彩色显像管和带有聚焦电极的直列电子枪具有细长的通孔
公开(公告)号：US5747922A
公开(公告)日：1998-05-05
申请号：US861910
申请日：1997-05-22
申请人： Masahiko Sukeno , Yasuyuki Ueda
发明人： Masahiko Sukeno , Yasuyuki Ueda
IPC分类号： H01J29/50 , H01J29/56 , H01J29/70
CPC分类号： H01J29/503 , H01J29/566 , H01J2229/4841 , H01J2229/4886
摘要： In a color picture tube having a wide and flat screen, one set of in-line three electron beam through holes on an end face of a first focusing electrode facing a second focusing electrode are formed with a vertically oblong rectangular shape, and the other set of in-line three electron beam through holes on an end face of the second focusing electrode facing the first focusing electrode are formed with a horizontally oblong rectangular shape, a pair of protrusions is provided on a pair of longer sides of each of the electron beam through holes. Therefore, intensive quadrupole fields, by which deflection distortion can be cancelled, can be generated. Fluctuation of the quadrupole fields due to interference of a dynamic voltage and focusing voltage, which are to be applied to the focusing electrodes, can be prevented.
摘要翻译：在具有宽屏平面的彩色显像管中，在第一聚焦电极的面对第二聚焦电极的端面上的一组直线三电子束通孔形成垂直长方形的矩形，另一组在面对第一聚焦电极的第二聚焦电极的端面上的直列三电子束通孔形成为水平长方形的矩形形状，一对突起设置在每个电子束的一对较长的边上通孔。因此，可以产生可以消除挠曲失真的强烈的四极场。可以防止由于施加到聚焦电极的动态电压和聚焦电压的干扰引起的四极场的波动。

88. 发明授权

US5714071A Method for extracting organic substance, solvent for use in said method, and method for measuring content of organic substance 失效
标题翻译：用于提取有机物质的方法，用于所述方法的溶剂，以及测定有机物质含量的方法
公开(公告)号：US5714071A
公开(公告)日：1998-02-03
申请号：US753688
申请日：1996-11-27
申请人： Kazuhiro Matsuo , Juichi Sasada
发明人： Kazuhiro Matsuo , Juichi Sasada
IPC分类号： B01D11/02 , B01D11/04 , B01D11/00
CPC分类号： B01D11/0288 , B01D11/0492
摘要： A method for extracting an organic substance from a material by extracting the organic substance with a mixed solvent which contains at least one polar solvent and at least one nonpolar solvent, by which a wide variety of organic substances can be extracted without using a halohydrocarbon at a relatively low temperature.
摘要翻译：一种通过用含有至少一种极性溶剂和至少一种非极性溶剂的混合溶剂萃取有机物质来提取有机物质的方法，通过该有机物质可以在不使用卤代烃的情况下提取多种有机物质温度相对较低

89. 发明授权

US5712194A Semiconductor device including interlayer dielectric film layers and conductive film layers 失效
标题翻译：半导体器件包括层间绝缘膜层和导电膜层
公开(公告)号：US5712194A
公开(公告)日：1998-01-27
申请号：US660745
申请日：1996-06-06
申请人： Masato Kanazawa
发明人： Masato Kanazawa
IPC分类号： H01L21/027 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/441
CPC分类号： H01L21/76843 , H01L21/0276 , H01L21/76801 , H01L21/76804 , H01L21/76814 , H01L21/7684 , H01L23/5226 , H01L23/53219 , H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： A first interlayer dielectric film layer is formed on a P-type semiconductor substrate. First connection holes are formed at specified positions of the first interlayer dielectric film layer. A first conductive film layer is formed in a region including at least the first connection holes and is composed of three layers by sequentially laminating a barrier metal film, an aluminum alloy film, and an anti-reflection film. A second interlayer dielectric film layer is formed on the first conductive film layer and is composed of a lower layer of silicon oxide film, an intermediate layer of silicon oxide film made of inorganic silica or organic silica, and a upper layer of silicon oxide film. Specified positions of the second interlayer dielectric film layer are selectively removed to form second connection holes. A second conductive film layer is formed thereon and is composed of two layers of refractory metal film in the bottom layer and aluminum alloy film in the top layer.
摘要翻译：在P型半导体衬底上形成第一层间电介质膜层。第一连接孔形成在第一层间电介质膜层的规定位置。在包括至少第一连接孔的区域中形成第一导电膜层，并且通过依次层叠阻挡金属膜，铝合金膜和抗反射膜，由三层构成。在第一导电膜层上形成第二层间绝缘膜层，由下层的氧化硅膜，由无机二氧化硅或有机二氧化硅构成的氧化硅膜的中间层和上层的氧化硅膜构成。选择性地去除第二层间电介质膜层的指定位置以形成第二连接孔。在其上形成第二导电膜层，由底层中的两层难熔金属膜和顶层中的铝合金膜构成。

90. 发明授权

US5708302A Bottom electrode structure for dielectric capacitors 失效
标题翻译：介质电容器的底部电极结构
公开(公告)号：US5708302A
公开(公告)日：1998-01-13
申请号：US427897
申请日：1995-04-26
申请人： Masamichi Azuma , Carlos A. Paz De Araujo , Joseph D. Cuchiaro
发明人： Masamichi Azuma , Carlos A. Paz De Araujo , Joseph D. Cuchiaro
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108 , H01L23/48
CPC分类号： H01L28/60
摘要： An integrated circuit capacitor (20) includes a bottom electrode structure (24) having an adhesion metal portion (34), a noble metal portion (36), and a second noble metal layer (40). A process of manufacture includes annealing the adhesion metal portion (34) and the noble metal portion (36) prior to the deposition of second noble metal layer (40) for purposes of forming barrier region (38). The electrode (24) preferably contacts metal oxide layer (26), which is made of a perovskite or perovskite-like layered superlattice material. A temporary capping layer (59) is formed and removed in manufacture, which serves to increase polarization potential from the device by at least 40%.
摘要翻译：集成电路电容器（20）包括具有粘附金属部分（34），贵金属部分（36）和第二贵金属层（40）的底部电极结构（24）。制造方法包括为了形成阻挡区域（38）而在沉积第二贵金属层（40）之前退火附着金属部分（34）和贵金属部分（36）。电极（24）优选接触由钙钛矿或类钙钛矿层状超晶格材料制成的金属氧化物层（26）。在制造中形成和移除临时封盖层（59），其用于将器件的极化电位增加至少40％。

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