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71. 发明专利

DE2644654C2 未知
公开(公告)号：DE2644654C2
公开(公告)日：1988-06-09
申请号：DE2644654
申请日：1976-10-02
申请人： BBC BROWN BOVERI AG, BADEN, AARGAU, CH
发明人： JAECKLIN, ANDRE, DR., ENNETBADEN, CH
IPC分类号： H01L29/06 , H01L29/74 , H01L29/743
摘要： A semiconductor device including at least four zones of alternately opposite conductivity types, the two inner zones and the outer zone adjoining each of them in each case possessing a common surface, on which there is provided a main electrode making contact with both the inner and the outer zone, the first main electrode comprising a central recess in which the first inner zone is in contact with a control electrode, and there being on the surface of the two inner zones heavily doped regions, surrounding the two outer zones, of the same conductivity type as the adjoining inner zone and which are at a distance of at least two carrier-diffusion lengths for the purpose of forming a guard zone for the outer zone disposed on the same surface, and wherein there is provided on the surface of an inner zone, between the outer zone disposed on the same surface and the heavily doped region surrounding that outer zone, an annular guard zone of the opposite conductivity type to that of the adjacent inner zone.

72. 发明专利

DE3465222D1 VOLTAGE BREAKOVER PROTECTED THYRISTOR HAVING FIELD-CONTAINING LAYER IN AVALANCHE VOLTAGE BREAKOVER ZONE 未知
公开(公告)号：DE3465222D1
公开(公告)日：1987-09-10
申请号：DE3465222
申请日：1984-05-18
申请人： GEN ELECTRIC
发明人： TEMPLE VICTOR ALBERT KEITH
IPC分类号： H01L29/74 , H01L29/861 , H01L31/111 , H01L29/10 , H01L29/06 , H01L29/743

73. 发明专利

DE3370246D1 TEMPERATURE STABLE SELF-PROTECTED THYRISTOR AND METHOD OF PRODUCING 未知
公开(公告)号：DE3370246D1
公开(公告)日：1987-04-16
申请号：DE3370246
申请日：1983-10-12
申请人： WESTINGHOUSE ELECTRIC CORP
发明人： PRZYBYSZ JOHN XAVIER
IPC分类号： H01L29/74 , H01L29/861 , H01L29/10 , H01L29/743 , H01L29/06
摘要： Provisions for an overvoltage self-protection in a thyristor consisting of a cathode emitter region (12), a cathode base region (14), an anode base region (18) and an anode emitter region (22), further consisting of metal electrodes in ohmic electrical contact (28,36,34) with the cathode emitter region, anode emitter region and one of the base regions (e.g., 14) which provisions comprise forming a well (46) in one of said base regions (e.g. 14) and disposing an electrical contact (48) in this well, which is on its part in ohmic electrical contact with the above mentioned base region (14). … The process for producing overvoltage self-protection in the thyristor comprises the use of a laser or of other drilling or abrasing means, which are, while continually monitoring the I V- characteristic of the thyristor, applied until the desired blocking voltage is realized.

74. 发明专利

DE3368153D1 ASYMMETRICAL THYRISTOR FOR HIGH INVERSE BIASING 未知
公开(公告)号：DE3368153D1
公开(公告)日：1987-01-15
申请号：DE3368153
申请日：1983-10-28
申请人： SILICIUM SEMICONDUCTEUR SSC
发明人： FELICI MAURIZIO
IPC分类号： H01L29/08 , H01L29/74 , H01L29/743

75. 发明专利

ES8608231A1 UN DISPOSITIVO SEMICONDUCTOR 未知
公开(公告)号：ES8608231A1
公开(公告)日：1986-06-16
申请号：ES542830
申请日：1985-05-03
申请人： STANDARD ELECTRICA SA
IPC分类号： H01L20060101 , H01L29/00 , H01L29/08 , H01L29/743
摘要： MODIFICACIONES EN SEMICONDUCTORES QUE INCLUYEN REGIONES DE MATERIAL ALTAMENTE DOPADO. CONSISTENTE EN QUE: EL SUMIDERO Y LA REGION, ESTAN PARCIALMENTE RODEADOS POR UNA ZONA DE UN MATERIAL ALTAMENTE DOPADO, DE CONDUCTIVIDAD PB QUE PERMITE QUE LA CORRIENTE FLUYA DEL SUMIDERO A LA ZONA DICHA; EL SUMIDERO COMPRENDE MATERIAL PC; LA REGION COMPRENDE MATERIAL NB; SE INCLUYE UN THYRISTOR QUE COMPRENDE UN TRANSISTOR PNP (T1) Y UN TRANSISTOR NPN (T2) INTERCONECTADOS ENTRE DOS TERMINALES (S1, S2) QUE CONSTITUYEN LOS EMISORES RESPECTIVOS DE LOS TRANSISTORES; LA UNION BASE-EMISOR DEL TRANSISTOR (T2) TIENE COLOCADO EN PARALELO UN DISPOSITIVO DE DESCONEXION (PM). SE UTILIZA PARA DESCONECTAR O DESVIAR UNA CORRIENTE DE VALOR ELEVADO.

76. 发明专利

DE3173128D1 POWER THYRISTOR 未知
公开(公告)号：DE3173128D1
公开(公告)日：1986-01-16
申请号：DE3173128
申请日：1981-08-20
申请人： TOSHIBA KK
发明人： ARAKI YOUICHI , OGAWA TOSHIO
IPC分类号： H01L29/08 , H01L29/74 , H01L29/743 , H01L29/52
摘要： Disclosed is a semiconductor device comprising: a semiconductor body having a first semiconductor layer (32) of the N conductivity type, second and third semiconductor layers (34,36) of the P conductivity type, and first and second regions (38, 40) of the N conductivity type formed in the second semiconductor layer (34); a cathode electrode (42) having first and second portions (42A, 42 8 ) formed on the first semiconductor region (38); a gate electrode (44) provided in the second semiconductor layer (34) in opposition to the cathode electrode (42) with the second semiconductor region (40) interposed therebetween; an anode electrode (46) provided on the third semiconductor layer (36); an auxiliary electrode (48) consisting of two first portions (48 Al , 48 A2 ) and one second portion (48 8 ) connected at ends respectively to the first portions (48 A1 , 48 A2 ), said first portions (48 A1 , 48 A2 ) being formed on said second region (34) and having free ends spaced from each other, and said second portion (48 B ) formed on said second layer (34) and extending along the periphery of the first portion (42A) of said cathode electrode (42); and the second portion (42 8 ) of the cathode electrode (42) being between free ends of the first portion of the auxiliary electrode (48).

77. 发明专利

DE3267132D1 SEMICONDUCTOR SWITCHING DEVICE 未知
公开(公告)号：DE3267132D1
公开(公告)日：1985-12-05
申请号：DE3267132
申请日：1982-06-03
申请人： HITACHI LTD
发明人： YATSUO TSUTOMU , NAGANO TAKAHIRO , OIKAWA SABURO , HORIE AKIRA
IPC分类号： H01L29/08 , H01L29/74 , H01L29/744 , H01L29/743
摘要： A gate turn-off thyristor in which a cathode-emitter layer (2) is divided into a plurality of striplike regions which are radially arrayed on a major surface of a semiconductor substrate in a coaxial multi-ring pattern including a plurality of coaxially arrayed rings (R 1 , ..., R s ). The cathode-emitter strips (2) belonging to a given one of the rings have a same radial length. The cathode-emitter strips belonging to the inner ring of a coaxial multi-ring pattern have a smaller radial length than that of the cathode-emitter strips (2) constituting the outer ring. A cathode electrode (8) is contacted to the cathode-emitter strip (2) in low resistance ohmic contact. A gate electrode (9) is ohmic contacted with a low resistance to a cathode-base layer (3) located adjacent to the cathode-emitter strip (2) so as to enclose it. An anode electrode (7) is ohmic contacted with a low resistance to the anode-emitter layer (5). With the structure of GTO, turn-off operation of unit GTO's each including a cathode-emitter strip is equalized.

78. 发明专利

DE2967387D1 A GATE CONTROLLED SEMICONDUCTOR DEVICE 未知
公开(公告)号：DE2967387D1
公开(公告)日：1985-03-28
申请号：DE2967387
申请日：1979-08-20
申请人： MEIDENSHA ELECTRIC MFG CO LTD
发明人： SUEOKA TETSURO , ISHIBASHI SATOSHI
IPC分类号： H01L29/08 , H01L29/10 , H01L29/423 , H01L29/74 , H01L29/744 , H01L29/743 , H01L29/60

79. 发明专利

DE2121086C3 未知
公开(公告)号：DE2121086C3
公开(公告)日：1985-02-21
申请号：DE2121086
申请日：1971-04-29
申请人： RCA CORP., NEW YORK, N.Y., US
发明人： THOMAS, ALBERT WILLIAM, SOMERVILLE, N.J., US , NEILSON, JOHN MANNING SAVIDGE, NORRISTOWN, PA., US , GREENBERG, LEON STANLEY, SOMERVILLE, N.J., US
IPC分类号： H01L21/00 , H01L27/06 , H01L29/74 , H01L29/861 , H01L29/743
摘要： A semiconductor switching device comprising a silicon controlled rectifier (SCR) and a diode rectifier integrally connected in parallel with the SCR in a single semiconductor body. The device is of the NPNP or PNPN type, having gate, cathode, and anode electrodes. A portion of each intermediate N and P region makes ohmic contact to the respective anode or cathode electrode of the SCR. In addition, each intermediate region includes a highly conductive edge portion. These portions are spaced from the adjacent external regions by relatively low conductive portions, and limit the conduction of the diode rectifier to the periphery of the device. A profile of gold recombination centers further electrically isolates the central SCR portion from the peripheral diode portion.

80. 发明专利

DE3345060A1 Semiconductor device 未知
公开(公告)号：DE3345060A1
公开(公告)日：1984-08-30
申请号：DE3345060
申请日：1983-12-13
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： SAKURAI HIROSHI , IWASAKI MASAMI , USUI YASUNORI
IPC分类号： H01L29/06 , H01L29/08 , H01L29/10 , H01L29/72 , H01L29/743
摘要： In a semiconductor device, n-type regions (8a, 8b) surrounded by an annular emitter structure and an emitter region (3) are situated opposite a principal surface of the semiconductor body. The n-type regions (8a, 8b) are situated within the range of a charge carrier diffusion length from the emitter region (3) and are connected to a base electrode (5).

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