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71. 发明申请

US20020056859A1 Field effect transistor with reduced gate delay and method of fabricating the same 有权
标题翻译：具有减小的栅极延迟的场效应晶体管及其制造方法
公开(公告)号：US20020056859A1
公开(公告)日：2002-05-16
申请号：US09847622
申请日：2001-05-02
发明人： Manfred Horstmann , Rolf Stephan , Karsten Wieczorek , Stephan Kruegel
IPC分类号： H01L021/336 , H01L027/148
CPC分类号： H01L21/28052 , H01L21/28114 , H01L29/42376 , H01L29/4933
摘要： A transistor formed on a substrate comprises a gate electrode having a lateral extension at the foot of the gate electrode that is less than the average lateral extension of the gate electrode. The increased cross-section of the gate electrode compared to the rectangular cross-sectional shape of a prior art device provides for a significantly reduced gate resistance while the effective gate length, i.e., the lateral extension of the gate electrode at its foot, may be scaled down to a size of 100 nm and beyond. Moreover, a method for forming the field effect transistor described above is disclosed.
摘要翻译：形成在基板上的晶体管包括栅电极，栅电极在栅极的脚处具有小于栅电极的平均横向延伸的横向延伸。与现有技术的器件的矩形横截面形状相比，栅电极的横截面增加提供了显着降低的栅极电阻，而有效栅极长度，即栅电极在其脚处的横向延伸可以是缩小到100nm以上的尺寸。此外，公开了一种用于形成上述场效应晶体管的方法。

72. 发明申请

US20020047139A1 Solid state image pickup device and its driving method 失效
标题翻译：固态摄像装置及其驱动方法
公开(公告)号：US20020047139A1
公开(公告)日：2002-04-25
申请号：US09983119
申请日：2001-10-23
申请人： Fuji Photo Film Co., Ltd.
发明人： Hideki Wako , Katsumi Ikeda , Tetsuo Yamada
IPC分类号： H01L029/768 , H01L027/148
CPC分类号： H01L29/76816 , H01L27/14812 , H01L27/14831
摘要： A drain region is formed along a horizontal charge transfer channel constituting a horizontal charge transfer element, and a barrier region for charges is formed between the horizontal charge transfer channel and drain region. A two-electrode element is formed by using the horizontal charge transfer channel, barrier region and drain region. A solid state image pickup device can be manufactured with high productivity, which device can drain charges in the horizontal charge transfer element at high speed.
摘要翻译：沿着构成水平电荷转移元件的水平电荷转移通道形成漏极区，并且在水平电荷转移通道和漏极区之间形成用于电荷的势垒区。通过使用水平电荷转移通道，阻挡区域和漏极区域形成双电极元件。可以以高生产率制造固态图像拾取装置，该装置可以高速地在水平电荷转移元件中排出电荷。

73. 发明申请

US20020033492A1 CMOS image sensor having enhanced photosensitivity and method for fabricating the same 有权
标题翻译：具有增强的光敏性的CMOS图像传感器及其制造方法
公开(公告)号：US20020033492A1
公开(公告)日：2002-03-21
申请号：US09995215
申请日：2001-11-26
发明人： Ju-Il Lee , Nan-Yi Lee
IPC分类号： H01L027/148
CPC分类号： H01L31/02162 , H01L31/02161 , H01L31/02327
摘要： There is provided a method for fabricating a CMOS image sensor having enhanced reliability and light sensitivity, which comprises the steps of providing a substrate including photosensitive elements and metal wire; forming a first protecting film for protecting the elements over the substrate, covering the metal wire; forming a flattened spin-on-glass film on the first protecting film; forming a second protecting film for protecting the elements on the spin-on-glass film; forming color filter patterns on the second protecting film; forming a photoresist film for flattening on the color filter patterns and the second protecting film; and forming microlenses on the photoresist film. By using the flattened SOG film and a photoresist for flattening and pad opening, the present invention can accomplish the thickness uniformity of the color filter corresponding to each unit pixel, the wire-bonding pad devoid of the residuals of the color filter materials and the figure uniformity of the microlenses. The total thickness of the films between the microlens and the photosensitive element of unit pixel can also be adjusted to focus the incident lights onto the photosensitive element of unit pixel.
摘要翻译：提供了一种制造具有增强的可靠性和光敏度的CMOS图像传感器的方法，其包括提供包括光敏元件和金属线的基板的步骤; 形成用于保护元件在基板上的第一保护膜，覆盖金属丝; 在第一保护膜上形成平坦化的旋涂玻璃膜; 形成用于保护旋涂玻璃膜上的元件的第二保护膜; 在第二保护膜上形成滤色器图案; 形成用于使滤色器图案和第二保护膜平坦化的光致抗蚀剂膜; 并在光致抗蚀剂膜上形成微透镜。通过使用平坦化的SOG膜和用于平坦化和焊盘开口的光致抗蚀剂，本发明可以实现与每个单位像素相对应的滤色器的厚度均匀性，没有滤色器材料残留物的引线接合垫和图微透镜的均匀性。也可以调整微透镜和单位像素的感光元件之间的膜的总厚度，以将入射光聚焦到单位像素的感光元件上。

74. 发明申请

US20020024069A1 Charge transfer device 有权
标题翻译：电荷转移装置
公开(公告)号：US20020024069A1
公开(公告)日：2002-02-28
申请号：US09942143
申请日：2001-08-29
申请人： NEC Corporation
发明人： Shiro Tsunai
IPC分类号： H01L027/148 , H01L029/768
CPC分类号： H04N5/363
摘要： A charge transfer device is provided which is capable of reducing a reset field-through noise in a stable manner without being affected by characteristics of transistors and without occurrence of a mustache-shaped pulse-like noise. The charge transfer device is made up of a floating diffusion region used to convert a signal charge transferred from a CCD (Charge Coupled Device) into a voltage, resetting unit used to eject the signal charge accumulated in the floating diffusion region in response to a reset pulse, a first stage source follower used to current-amplify the voltage and second stage source follower in which load is changed in response to the reset pulse and which is used to current-amplify an output voltage of the first stage source follower.
摘要翻译：提供一种电荷转移装置，其能够以不稳定的方式降低复位通过噪声，而不受晶体管的特性的影响，并且不发生胡塞状脉冲状噪声。电荷转移装置由用于将从CCD（电荷耦合器件）传送的信号电荷转换成用于响应于复位而弹出积累在浮动扩散区域中的信号电荷的电压复位单元的浮动扩散区域脉冲，用于对电压进行电流放大的第一级源极跟随器，并且响应于复位脉冲改变负载并且用于对第一级源极跟随器的输出电压进行电流放大的第二级源极跟随器。

75. 发明申请

US20020011611A1 CMOS image sensor and method of manufacture 审中-公开
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20020011611A1
公开(公告)日：2002-01-31
申请号：US09963201
申请日：2001-09-25
发明人： Sen-Huang Huang , San-Wen Chiou , Sheng-Yang Huang
IPC分类号： H01L027/148
CPC分类号： H01L27/14609 , H01L27/14689
摘要： A CMOS image sensor structure that includes a substrate, a sensing layer and a dopant layer. The substrate is formed using a first conductive type material. The sensing region is buried within the substrate. The sensing layer is a second type conductive material layer. The dopant layer is formed above the sensing layer. The dopant layer is a first type conductive material layer.
摘要翻译： CMOS图像传感器结构，其包括衬底，感测层和掺杂剂层。基板使用第一导电型材料形成。感测区域被埋在衬底内。感测层是第二类导电材料层。掺杂剂层形成在感测层上方。掺杂剂层是第一类导电材料层。

76. 发明申请

US20020000581A1 Semiconductor integrated circuit having a self-refresh function 失效
标题翻译：具有自刷新功能的半导体集成电路
公开(公告)号：US20020000581A1
公开(公告)日：2002-01-03
申请号：US09562925
申请日：2000-05-02
发明人： Kyoji Yamasaki
IPC分类号： H01L027/148
CPC分类号： G11C11/40611 , G11C11/406 , G11C2211/4061 , G11C2211/4067
摘要： A self-refresh circuit included in a semiconductor integrated circuit includes a ring oscillator, a double period counter, an SELF generating portion generating a signal SELFO corresponding to an internal RAS, and a BBUE generating portion. The double period counter performs a count operation, using the output signal of the double period counter as a basic signal. The BBUE generating portion generates a BBUE signal in accordance with the output of double period counter. When the BBUE rises to H-level, the self-refresh signal SELF corresponding to signal SELF0 is issued. A layout area can be small, and timing of entry in a self-refresh mode can be finely set.
摘要翻译：包括在半导体集成电路中的自刷新电路包括环形振荡器，双周期计数器，产生与内部RAS相对应的信号SELFO的SELF生成部分和BBUE产生部分。双周期计数器使用双周期计数器的输出信号作为基本信号来执行计数操作。 BBUE生成部根据双周期计数器的输出生成BBUE信号。当BBUE上升到H电平时，发出对应于信号SELF0的自刷新信号SELF。布局区域可以很小，并且可以精细地设置自刷新模式中的输入定时。

77. 发明申请

US20010054723A1 Image sensor, method of fabricating the same, and exposure apparatus, measuring device, alignment device, and aberration measuring device using the image sensor 审中-公开
标题翻译：图像传感器及其制造方法以及使用图像传感器的曝光装置，测量装置，对准装置和像差测量装置
公开(公告)号：US20010054723A1
公开(公告)日：2001-12-27
申请号：US09908181
申请日：2001-07-18
发明人： Tadashi Narui , Keiichi Akagawa , Takeshi Yagi
IPC分类号： H01L027/148
CPC分类号： H01L27/14687 , H01L27/1463 , H01L27/1464 , H01L27/14643 , H01L27/14654 , H01L27/14683 , H01L27/14689 , H01L27/14806
摘要： In the present invention, a charge transfer unit is arranged on a first-plane side of a thinly-formed semiconductor base. Charge accumulating units are arranged on a second-plane side, the opposite side. A depletion prevention layer is arranged closer to the second-plane side than the charge accumulating units. The depletion prevention layer prevents a depletion region around the charge accumulating units from reaching the second plane of the semiconductor base. The depletion prevention layer can suppress surface dark current going into the charge accumulating units. Meanwhile, an energy ray incident from the second-plane side pass through the depletion prevention layer to generate signal charges in the charge accumulating units (depletion regions). The charge accumulating units collect, on a pixel-by-pixel basis, the signal charges which are to be transported to the charge transfer unit under voltage control or the like, and then are read to exterior as image signals.
摘要翻译：在本发明中，电荷转移单元布置在薄形半导体基底的第一平面侧上。电荷累积单元布置在相反侧的第二平面侧上。耗尽防止层比电荷累积单元更靠近第二平面侧布置。耗尽防止层防止电荷累积单元周围的耗尽区域到达半导体基底的第二平面。耗尽防止层可以抑制进入电荷累积单元的表面暗电流。同时，从第二平面侧入射的能量射线通过耗尽防止层，以在电荷累积单元（耗尽区域）中产生信号电荷。电荷累积单元在逐个像素的基础上收集要在电压控制等下传输到电荷转移单元的信号电荷，然后作为图像信号读取到外部。

78. 发明申请

US20010042875A1 Solid-state imaging device capable of improving sensitivity without causing rise in depletion voltage and shutter voltage 失效
标题翻译：能够提高灵敏度而不引起耗尽电压和快门电压上升的固态成像装置
公开(公告)号：US20010042875A1
公开(公告)日：2001-11-22
申请号：US09819474
申请日：2001-03-28
发明人： Toshio Yoshida
IPC分类号： H01L027/148 , H01L029/768 , H01L031/062
CPC分类号： H01L27/14698 , H01L27/14806
摘要： A high-concentration light-receiving N-layer 32 is formed by ion implantation in a region near a substrate surface, and a low-concentration N-type epitaxial layer 25 is formed by epitaxial growth in a deeper region. The depletion layer of a photodiode is thus expanded to a deep portion of the substrate by the low-concentration N-type region 25, by which a photoelectric conversion effect on incident light of a long wavelength is increased to improve sensitivity. In the above stage, a deepest potential portion is formed on the substrate surface side. Therefore, a depletion voltage can be prevented from rising. Further, an intermediate-concentration N-type epitaxial layer 23 and a high-concentration N-type epitaxial layer 22 are formed in a stack of two layers by epitaxial growth in a region deeper than a region in which a first P-type layer 24, or a barrier region is formed, by which a shutter voltage can be prevented from rising. Thus, sensitivity is improved without causing a rise in the depletion voltage and shutter voltage.
摘要翻译：通过在衬底表面附近的区域中的离子注入形成高浓度的光接收N层32，并且通过在较深的区域中外延生长形成低浓度的N型外延层25。因此，通过低浓度N型区域25将光电二极管的耗尽层扩展到衬底的深部，由此增加对长波长的入射光的光电转换效果以提高灵敏度。在上述阶段，在基板表面侧形成最深的电位部分。因此，可以防止耗尽电压上升。此外，中间浓度N型外延层23和高浓度N型外延层22通过在比第一P型层24的区域更深的区域中进行外延生长而形成为两层的叠层，或者形成阻挡区域，由此可以防止快门电压上升。因此，提高灵敏度，而不会导致耗尽电压和快门电压的升高。

79. 发明申请

US20010042870A1 Power semiconductor and fabrication method 失效
标题翻译：功率半导体和制造方法
公开(公告)号：US20010042870A1
公开(公告)日：2001-11-22
申请号：US09840549
申请日：2001-04-23
发明人： Hans-Joachim Schulze
IPC分类号： H01L027/148 , H01L029/768
CPC分类号： H01L29/0615 , H01L29/167
摘要： A power semiconductor containing an anode disposed on either a top side or a bottom side is described. A cathode is disposed on the side that is unoccupied by the anode, and edge terminations are provided on the top side. The power semiconductor is characterized in that at least one region extends from an edge termination on the top side to a semiconductor region on the bottom side in order to form an ohmic connection, and is characterized in that this at least one region is doped with sulfur.
摘要翻译：描述了包含设置在顶侧或底侧上的阳极的功率半导体。阴极设置在不被阳极占据的一侧，并且边缘终端设置在顶侧。功率半导体的特征在于，至少一个区域从顶侧的边缘终端延伸到底侧上的半导体区域以形成欧姆连接，其特征在于，该至少一个区域掺杂有硫。

80. 发明申请

US20010035534A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20010035534A1
公开(公告)日：2001-11-01
申请号：US09760959
申请日：2001-01-16
发明人： Motonobu Takeya , Katsunori Yanashima , Masao Ikeda , Takeharu Asano , Shinro Ikeda , Tomonori Hino , Katsuyoshi Shibuya
IPC分类号： H01L031/0328 , H01L031/0336 , H01L031/072 , H01L031/109 , H01L027/148 , H01L029/768
CPC分类号： H01L21/02378 , H01L21/0242 , H01L21/02422 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/0265 , H01L33/007 , H01S5/32341 , H01S2304/12
摘要： To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity. The semiconductor layer of the III-V group compound of the nitride system whose thickness is equal to or less than 8 nullm, is provided onto a substrate made of sapphire. This reduces the bowing of the substrate due to differences in a thermal expansion coefficient and a lattice constant between the substrate and the semiconductor layer of the III-V group compound of the nitride system. An n-side contact layer forming the semiconductor layer of the III-V group of the nitride system has partially a lateral growth region made by growing in a lateral direction from a crystalline part of a seed crystal layer. In the lateral growth region, dislocation density restricts low, therefore, regions corresponding to the lateral growth region of each layer formed onto the n-side contact layer has excellent crystallinity.
摘要翻译：提供能够防止衬底弯曲的半导体器件，并且具有具有优异结晶度的氮化物系的III-V族化合物的半导体层。将厚度等于或小于8μm的氮化物系III-V族化合物的半导体层提供到由蓝宝石制成的衬底上。由于氮化物系III-V族化合物的基板与半导体层之间的热膨胀系数和晶格常数的差异，这减少了基板的弯曲。形成氮化物体系的III-V族的半导体层的n侧接触层部分地是由晶种层的结晶部分沿横向生长而形成的横向生长区域。在横向生长区域中，位错密度低，因此，与形成在n侧接触层上的各层的横向生长区域对应的区域具有优异的结晶性。

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