会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 71. 发明专利
    • Pattern forming method
    • 图案形成方法
    • JP2010016259A
    • 2010-01-21
    • JP2008176152
    • 2008-07-04
    • Panasonic Corpパナソニック株式会社
    • ENDO MASATAKASASAKO MASARU
    • H01L21/027
    • G03F7/0035G03F7/40H01L21/0274H01L21/033H01L21/0337Y10S427/102Y10S430/143Y10S430/146
    • PROBLEM TO BE SOLVED: To make it possible to attain a fine pattern having an excellent shape by preventing the generation of pattern defect in double patterning.
      SOLUTION: A first resist film 102 is formed on a substrate 101, and a first pattern exposure which irradiates exposing light on the first resist film 102 through a first mask 103A is carried out. The first resist film 102 develops to form a first resist pattern 102a from the first resist film 102. Then, nanocarbon is deposited on the surface of the first resist pattern 102a, and a second resist film 105 is formed on the substrate 101 containing the first resist pattern 102a. Next, a second pattern exposure which irradiates exposing light on the second resist film 105 through a second mask 103B is carried out, and the second resist film 105 develops to form a second resist pattern 105a from the second resist film 105.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:通过防止双重图案化中的图案缺陷的产生,可以获得具有优异形状的精细图案。 解决方案:在基板101上形成第一抗蚀膜102,并且通过第一掩模103A对第一抗蚀膜102上的曝光进行照射的第一图案曝光。 第一抗蚀剂膜102发展成从第一抗蚀剂膜102形成第一抗蚀剂图案102a。然后,在第一抗蚀剂图案102a的表面上沉积纳米碳,并且在包含第一抗蚀剂膜102的基板101上形成第二抗蚀剂膜105 抗蚀剂图案102a。 接下来,执行通过第二掩模103B对第二抗蚀剂膜105上的曝光进行照射的第二图案曝光,并且使第二抗蚀剂膜105展开,从第二抗蚀膜105形成第二抗蚀剂图案105a。 (C)2010,JPO&INPIT