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    • 72. 发明授权
    • Low noise amplifier (LNA) gain switch circuit
    • 低噪声放大器(LNA)增益开关电路
    • US07650132B2
    • 2010-01-19
    • US11544343
    • 2006-10-06
    • Hooman Darabi
    • Hooman Darabi
    • H04B1/28
    • H03F1/223H03F3/72H03F2200/294H03F2200/453H03F2203/7233H03G1/0088H03G3/3052H04B1/18H04B1/406
    • A circuit is formed to steer current in and out of an inductive load in a manner that enables an amplifier to provide a plurality of gain steps without modifying an LC time constant for the circuit and, therefore, without modifying the tuning or frequency of oscillation for the circuit. A first group of MOSFETs are coupled in parallel and define the circuit current flow. A second group of MOSFETs are coupled in parallel to each other and in series to an impedance device. A third group of MOSFETs coupled to steer current in and out of the impedance device to affect the output signal coupled to one end of the impedance device. The transistors in the second and third groups of MOSFETs are selectively activated to control the amount of current that goes through the impedance device.
    • 电路形成为以电流负载的方式引导电流,使得放大器能够提供多个增益步骤而不修改电路的LC时间常数,因此,不改变振荡的调谐或振荡频率 电路。 第一组MOSFET并联并定义电路电流。 第二组MOSFET彼此并联并串联耦合到阻抗器件。 第三组MOSFET,其耦合以引导进入和流出阻抗器件的电流,以影响耦合到阻抗器件的一端的输出信号。 选择性地激活第二组和第三组MOSFET中的晶体管以控制通过阻抗器件的电流量。
    • 73. 发明授权
    • Multi-mode power amplifier with high efficiency under backoff operation
    • 多模功率放大器,在退避操作下效率高
    • US07479827B2
    • 2009-01-20
    • US11841162
    • 2007-08-20
    • Gary HauAbid Hussain
    • Gary HauAbid Hussain
    • H03F1/14
    • H03F1/0277H03F1/0261H03F1/56H03F3/19H03F3/211H03F3/245H03F3/72H03F2200/318H03F2200/411H03F2200/451H03F2203/7206H03F2203/7231H03F2203/7233H03F2203/7239
    • A multi-mode RF amplifier is disclosed having high and low output power modes and two power paths. A first RF amplifier delivers power to both paths. When the multi-mode RF amplifier is biased into the high power, HP, mode, substantial power is delivered via both (first and second) paths. While in the low power, LP, mode, an RF switch is turned off, creating a high input impedance, open circuit for the first path, and effectively isolating the two paths. Therefore, power is delivered by the first RF amplifier to the second path only. The impedance presented to the output of the first RF amplifier is equal to the input impedance of the second path which may be optimally set for maximizing power added efficiency or output power in LP mode. Note that, in a preferred embodiment, even in the HP mode more power is delivered to the second power path than to the first power path.
    • 公开了具有高和低输出功率模式和两个功率路径的多模RF放大器。 第一个RF放大器为两个路径提供电源。 当多模RF放大器被偏置到高功率HP模式时,通过(第一和第二)路径传送大量功率。 在低功耗LP模式下,RF开关关闭,产生高输入阻抗,第一路径开路,有效隔离两路。 因此,功率由第一RF放大器传送到第二路径。 呈现给第一RF放大器的输出的阻抗等于第二路径的输入阻抗,该阻抗可以被最优化地设定,以在LP模式中最大化功率附加效率或输出功率。 注意,在优选实施例中,即使在HP模式中,与第一功率路径相比,更多的功率被传送到第二功率路径。